Dual Photovoltaic MOSFET Driver Solid-State Relay
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1 Dual Photovoltaic MOSFET Driver Solid-State Relay SMD i179034_2 DIP DESCRIPTION - Control 1 + Control 1 - Control 2 + Control Output 1 + Output 1 - Output 2 + Output 2 The VO1263AB and VO1263AAC photovoltaic MOSFET driver consists of two LEDs optically coupled to two photodiode arrays. The photodiode array provides a floating source with adequate voltage and current to drive high-power MOSFET transistors. Optical coupling provides a high I/O isolation voltage. In order to turn the MOSFET off, an external resistance (gate-to-source) is required for gate discharge. FEATURES High open circuit voltage, up to 14.6 V typical High short circuit current, up to 42 μa typical Isolation test voltage 5300 V RMS Logic compatible input High reliability Material categorization: For definitions of compliance please see /doc?99912 APPLICATIONS High-side driver Solid-state relays Floating power supply Power control Data acquisition ATE Isolated switching Note See solid-state relays (application note 56) AGENCY APPROVALS UL1577 DIN EN (VDE ) FIMKO BSI EN 60065, EN CQC GB8898, GB ORDERING INFORMATION V O # # # T R DIP SMD PART NUMBER ELECTR. VARIATION PACKAGE CONFIG. TAPE AND REEL 7.62 mm > 0.1 mm PACKAGE SMD-8 SMD-8, tape and reel DIP-8 UL, BSI, VDE, FIMKO VO1263AAC VO1263AACTR VO1263AB ABSOLUTE MAXIMUM RATINGS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT SSR LED input ratings continuous forward current I F 50 ma LED input ratings reverse voltage I R μa V R 5.0 V Photodiode array reverse voltage I R 2.0 μa V R 0 V Ambient operating temperature range T amb - 40 to + 0 C Storage temperature range T stg - 40 to C Pin soldering temperature (1) t = 7.0 s max. T sld 270 C Input to output isolation test voltage t = 1 min V ISO 5300 V RMS Notes Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Rev. 1.8, 29-May-13 1 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900
2 ELECTRICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT LED forward voltage I F = ma V F V Detector reverse voltage I R = 2.0 μa V R(PDA) 350 V Open circuit voltage (pins 5, 6 or 7, 8) Short circuit current (pins 5, 6 or 7, 8) I F = 5.0 ma V OC V I F = ma V OC V I F = 15 ma V OC V I F = 20 ma V OC V V OC V I F = 5.0 ma I SC μa I F = ma I SC μa I F = 15 ma I SC μa I F = 20 ma I SC μa I SC μa Note Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. SWITCHING CHARACTERISTICS (T amb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Turn-on time I F = 20 ma (1) t on 16 μs Turn-off time I F = 20 ma (1) t off 472 μs Note (1) f = 1.0 khz, pulse width = 0 μs, load (R L ) = 1.0 M, 15 pf; measured at 90 % rated voltage (t on ), % rated voltage (t off ). Actuation speed depends upon the external t on and t off circuitry and the capacitance of the MOSFET. SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Climatic classification (according to IEC 68 part 1) 40/0/21 Comparative tracking index CTI Peak transient overvoltage V IOTM 8000 V Recurring peak voltage V IORM 630 V Package safety power P SO 500 mw Package safety current I SI 300 ma Package safety temperature T SI 175 C Creepage distance 7 mm Clearance distance 7 mm FUNCTIONAL DESCRIPTION Figure 1 outlines the IV characteristics of the illuminated photodiode array (PDA). For operation at voltages below V OC, the PDA acts as a nearly constant current source. The actual region of operation depends upon the load. The amount of current applied to the LED (pins 1 and 2 or 3 and 4) determines the amount of light produced for the PDA. For high temperature operation, more LED current may be required. Rev. 1.8, 29-May-13 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900
3 TYPICAL CHARACTERISTICS (T amb = 25 C, unless otherwise specified) Short Circuit Current (μa) I F = 20 ma I F = 15 ma I F = ma I F = 2 ma Short Circuit Current (μa) I F = 20 ma 20 I F = 15 ma I F = ma Open Circuit Voltage (V) T amb - Ambient Temperature ( C) Fig. 1 - Typical PDA ON Characteristics (with different load resistors) Fig. 4 - Short Circuit Current vs. Ambient Temperature Output Voltage (V) R L = MΩ R L = 5 MΩ R L = 2 MΩ R L = 500 kω R L = 0 kω Open Circuit Voltage (V) I I F = 50 ma F = 20 ma I F = ma LED Forward Current (ma) T amb - Ambient Temperature ( C) Fig. 2 - Output Voltage vs-led Current Fig. 5 - Open Circuit Voltage vs. Ambient Temperature Short Circuit Current (μa) C 0 C - 40 C LED Forward Voltage (V) I F = 20 ma I F = 2 ma I F = ma I F = 15 ma LED Forward Current (ma) T amb - Ambient Temperature ( C) Fig. 3 - Short Circuit Current vs. LED Forward Current Fig. 6 - LED Forward Voltage vs. Ambient Temperature Rev. 1.8, 29-May-13 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900
4 Channel 1 control MΩ P-channel JFET Switch 1 N-channel MOSFETs Channel 2 control MΩ P-channel JFET Switch 2 N-channel MOSFETs ilh1262cb_09 Fig. 7 - Typical Dual Form A Solid-State Relay Application PACKAGE DIMENSIONS in millimeters DIP pin one ID ISO method A typ typ. i to typ Rev. 1.8, 29-May-13 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900
5 SMD pin one ID R min ISO method A typ radius to 7 4 typ typ. 0.3 typ. i typ typ PACKAGE MARKING (example) VO1263 V YWW H 68 Rev. 1.8, 29-May-13 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT /doc?900
6 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 900
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ILD25T, ILD26T, ILD27T, ILD211T, ILD213T Optocoupler, Phototransistor Output, Dual Channel, SOIC-8 Package i17925 A1 C2 A3 C4 i17918-2 8C 7E 6C 5E DESCRIPTION The ILD25T, ILD26T, ILD27T, ILD211T, and ILD213T
Optocoupler, Phototransistor Output, with Base Connection, 300 V BV CEO
SFH64 Optocoupler, Phototransistor Output, with Base Connection, 3 V BV CEO i1794-3 DESCRIPTION The SFH64 is an optocoupler with very high BV CER, a minimum of 3 V. It is intended for telecommunications
Telecom Switch 1 Form A Solid-State Relay
, LH1529BB, Telecom Switch 1 Form A Solid-State Relay DIP S1 S' FEATURES Solid-state relay and optocoupler in one package Surface-mount package SMD i179034_2 DESCRIPTION The LH1529A and LH1529B telecom
Optocoupler, Phototransistor Output, Very High Isolation Voltage
Vishay Semiconductors Optocoupler, Phototransistor Output, 787-4 DESCRIPTION CNY64 CNY65 CNY66 Top View A C The CNY64, CNY65, and CNY66 consist of a phototransistor optically coupled to a gallium arsenide
Optocoupler, Phototransistor Output, AC Input, SOP-4L, Long Mini-Flat Package
Optocoupler, Phototransistor Output, AC Input, SOP-4L, Long Mini-Flat Package 17295-5 DESCRIPTION The consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in an
Optocoupler, Photodarlington Output, (Single, Dual, Quad Channel)
Optocoupler, Photodarlington Output, (Single, Dual, Quad Channel) Single Channel Dual Channel Quad Channel A C 2 NC 3 A C 2 C 3 A 4 A C 2 C 3 A 4 6 B 5 C 4 E 8 E 7 C 6 C 5 E 6 E 5 C 4 C 3 E FEATURES 25
Optocoupler, Phototriac Output, Zero Crossing, 1.5 kv/μs dv/dt, 600 V
Optocoupler, Phototriac Output, Zero Crossing, 1.5 kv/μs dv/dt, 6 V FEATURES 15 V/μs dv/dt minimum 6 V blocking voltage ma on-state current Zero crossing detector A C 1 2 6 5 MT2 NC Low input trigger current
Optocoupler, Phototransistor Output, with Base Connection
4N25, 4N26, 4N27, 4N28 Optocoupler, Phototransistor Output, FEATURES A 6 B Isolation test voltage 5000 V RMS Interfaces with common logic families C 2 5 C Input-output coupling capacitance < pf NC 3 4
High Speed Optocoupler, 1 MBd, Transistor Output
SFH3T, SFH3T, SFH343T High Speed Optocoupler, MBd, i94 DESCRIPTION SFH3/ NC A 2 C 3 NC 4 NC A 2 C 3 NC 4 i99-2 8 V CC The SFH3T, SFH3T, SFH343T, high speed optocouplers, each consists of a GaAlAs infrared
2 Form A Solid-State Relay
LH153AAC, LH153AACTR, LH153AB 2 Form A Solid-State Relay i17934_2 SMD DIP DESCRIPTION i17933-1 The LH153 relays are DPST normally open switches (2 form A) that can replace electromechanical relays in many
Optocoupler, Phototransistor Output
Optocoupler, Phototransistor Output TCDT2, TCDT2G Vishay Semiconductors 72_4 DESCRIPTION 72_6 NC C E 6 5 4 2 3 The TCDT2(G) series consists of a phototransistor optically coupled to a gallium arsenide
Optocoupler, Power Phototriac
Optocoupler, Power Phototriac i17912-3 DESCRIPTION The is an optically coupled phototriac driving an integrated power TRIAC in a DIP-8 package. Featuring galvanic and electrical noise isolation, the is
Optocoupler, Phototransistor Output, AC Input, with Base Connection
Optocoupler, Phototransistor Output, AC Input, with Base Connection HAA Vishay Semiconductors 2842- DESCRIPTION i7900-2 The HAA is a bi-directional input optically coupled isolator consisting of two inverse
Optocoupler, Phototransistor Output, High Reliability, 5300 V RMS
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES Excellent CTR linearity depending on forward current 17448 DESCRIPTION 1 A 1 C 2 The SFH615A (DIP) and SFH6156 (SMD) feature a variety
2.5 A Output Current IGBT and MOSFET Driver
VO. A Output Current IGBT and MOSFET Driver 9 DESCRIPTION NC A C NC _ The VO consists of a LED optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for
Optocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES Isolation test voltage 5 V RMS A 6 B Long term stability Industry standard dual-in-line package C 5 C Compliant to RoHS directive /95/EC
Optocoupler, Photodarlington Output, High Gain, with Base Connection
i79005 DESCRIPTION i79005_ The 4N32 and 4N33 are optically coupled isolators with a gallium arsenide infrared LED and a solicon photodarlington sensor. Switching can be achieved while maintaining a high
High Speed Optocoupler, Dual, 5 MBd
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Telecom Switch - 1 Form A Solid-State Relay
Telecom Switch - Form A Solid-State Relay i795- DESCRIPTION S 8 S' 7 The LH529FP and LH529GP telecom switches consist of an optically coupled solid state relay (SSR) and a bidirectional input optocoupler.
Optocoupler, Phototransistor Output (Dual, Quad Channel)
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Optocoupler, Phototransistor Output, with Base Connection
Vishay Semiconductors Optocoupler, Phototransistor Output, FEATURES 2842 DESCRIPTION i79004-5 Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS
Low Profile, 2.5 A Output Current IGBT and MOSFET Driver
Low Profile, 2.5 A Output Current IGBT and MOSFET Driver 22677 DESCRIPTION The consists of an infrared light emitting diode optically coupled to an integrated circuit with a power output stage. This optocoupler
Optocoupler, Phototransistor Output, High Temperature
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Optocoupler, Phototransistor Output, ATEX Certified
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CNY75A, CNY75B, CNY75C, CNY75GA, CNY75GB, CNY75GC. Optocoupler, Phototransistor Output, with Base Connection
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