E M27C Mbit (2Mb x16) UV EPROM and OTP EPROM

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1 32 Mbit (2Mb x16) UV PROM and OTP PROM 5V ± 10% SUPPLY VOLTAG in RAD OPRATION ACCSS TIM: 80ns WORD-WID CONFIGURABL 32 Mbit MASK ROM RPLACMNT LOW POWR CONSUMPTION Active Current 50mA at 5MHz Stand-by Current 100µA PROGRAMMING VOLTAG: 12V ± 0.25V PROGRAMMING TIM: 50µs/word LCTRONIC SIGNATUR Manufacturer Code: 0020h Device Code: 0034h DSCRIPTION The is a 32 Mbit PROM offered in the UV range (ultra violet erase). It is ideally suited for microprocessor systems requiring large data or program storage. It is organised as 2 MWords of 16 bit. The pin-out is compatible with a 32 Mbit Mask ROM. The FDIP42W (window ceramic frit-seal package) has a transparent lid which allows the user to expose the chip to ultraviolet light to erase the bit pattern. A new pattern can then be written rapidly to the device by following the programming procedure. For applications where the content is programmed only one time and erasure is not required, the is offered in PDIP42 and SDIP42 packages FDIP42W (F) PDIP42 (B) 42 1 SDIP42 (S) Figure 1. Logic Diagram V CC A0-A20 Q0-Q15 GV PP V SS AI02156 November /14

2 Figure 2. DIP Connections A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 V SS GV PP Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q AI02157 A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 A20 V SS Q15 Q7 Q14 Q6 Q13 Q5 Q12 Q4 V CC DVIC OPRATION The operating modes of the are listed in the Operating Modes Table. A single power supply is required in the read mode. All inputs are TTL compatible except for V PP and 12V on A9 for the lectronic Signature. Read Mode The has a word-wide organization. Chip nable () is the power control and should be used for device selection. Output nable (G) is the output control and should be used to gate data to the output pins independent of device selection. Assuming that the addresses are stable, the address access time (t AVQV ) is equal to the delay Table 1. Signal Names A0-A20 Q0-Q15 GV PP V CC V SS Address Inputs Data Outputs Chip nable Output nable / Program Supply Supply Voltage Ground from to output (t LQV ). Data is available at the output after a delay of t GLQV from the falling edge of GV PP, assuming that has been low and the addresses have been stable for at least t AVQV - t GLQV. Standby Mode The has a standby mode which reduces the supply current from 50mA to 100µA. The is placed in the standby mode by applying a CMOS high signal to the input.when in the standby mode, the outputs are in a high impedance state, independent of the GV PP input. Two Line Output Control Because PROMs are usually used in larger memory arrays, this product features a 2 line control function which accommodates the use of multiple memory connection. The two line control function allows: a. the lowest possible memory power dissipation, b. complete assurance that output bus contention will not occur. For the most efficient use of these two control lines, should be decoded and used as the primary device selecting function, while GV PP should be made a common connection to all devices in the array and connected to the RAD line from the system control bus. This ensures that all deselected memory devices are in their low power standby mode and that the output pins are only active when data is required from a particular memory device. 2/14

3 Table 2. Absolute Maximum Ratings (1) Symbol Parameter Value Unit T A Ambient Operating Temperature (3) 40 to 125 C T BIAS Temperature Under Bias 50 to 125 C T STG Storage Temperature 65 to 150 C V IO (2) Input or Output Voltage (except A9) 2 to 7 V V CC Supply Voltage 2 to 7 V V A9 (2) A9 Voltage 2 to 13.5 V V PP Program Supply Voltage 2 to 14 V Note: 1. xcept for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. xposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Refer also to the STMicroelectronics SUR Program and other relevant quality documents. 2. Minimum DC voltage on Input or Output is 0.5V with possible undershoot to 2.0V for a period less than 20ns. Maximum DC voltage on Output is V CC +0.5V with possible overshoot to V CC +2V for a period less than 20ns. 3. Depends on range. Table 3. Operating Modes Mode GV PP A9 Q15-Q0 Read V IL V IL X Data Out Output Disable V IL V IH X Hi-Z Program V IL Pulse V PP X Data In Program Inhibit V IH V PP X Hi-Z Standby V IH X X Hi-Z lectronic Signature V IL V IL V ID Codes Note: X = VIH or VIL, VID = 12V ± 0.5V. Table 4. lectronic Signature Identifier A0 Q7 Q6 Q5 Q4 Q3 Q2 Q1 Q0 Hex Data Manufacturer s Code V IL h Device Code V IH h Note: Outputs Q15-Q8 are set to '0'. 3/14

4 Table 5. AC Measurement Conditions High Speed Standard Input Rise and Fall Times 10ns 20ns Input Pulse Voltages 0 to 3V 0.4V to 2.4V Input and Output Timing Ref. Voltages 1.5V 0.8V and 2V Figure 3. AC Testing Input Output Waveform High Speed 3V Figure 4. AC Testing Load Circuit 1.3V 1N V 0V 3.3kΩ Standard 2.4V 2.0V DVIC UNDR TST C L OUT 0.4V 0.8V AI01822 C L = 30pF for High Speed C L = 100pF for Standard C L includes JIG capacitance AI01823B Table 6. Capacitance (1) (T A = 25 C, f = 1 MHz) Symbol Parameter Test Condition Min Max Unit C IN Input Capacitance V IN = 0V 10 pf C OUT Output Capacitance V OUT = 0V 12 pf Note: 1. Sampled only, not 100% tested. System Considerations The power switching characteristics of Advanced CMOS PROMs require careful decoupling of the supplies to the devices. The supply current ICC has three segments of importance to the system designer: the standby current, the active current and the transient peaks that are produced by the falling and rising edges of. The magnitude of the transient current peaks is dependent on the capacitive and inductive loading of the device outputs. The associated transient voltage peaks can be suppressed by complying with the two line out- put control and by properly selected decoupling capacitors. It is recommended that a 0.1µF ceramic capacitor is used on every device between V CC and V SS. This should be a high frequency type of low inherent inductance and should be placed as close as possible to the device. In addition, a 4.7µF electrolytic capacitor should be used between V CC and V SS for every eight devices. This capacitor should be mounted near the power supply connection point. The purpose of this capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. 4/14

5 Table 7. Read Mode DC Characteristics (1) (T A = 0 to 70 C, 40 to 85 C or 40 to 125 C; V CC = 5V ± 10%; V PP = V CC ) Symbol Parameter Test Condition Min Max Unit I LI Input Leakage Current 0v V IN V CC ±1 µa I LO Output Leakage Current 0V V OUT V CC ±10 µa I CC Supply Current = V IL, GV PP = V IL, I OUT = 0mA, f = 8MHz = V IL, GV PP = V IL, I OUT = 0mA, f = 5MHz 70 ma 50 ma I CC 1 Supply Current (Standby) TTL = V IH 1 ma I CC 2 Supply Current (Standby) CMOS > V CC 0.2V 100 µa I PP Program Current V PP = V CC 10 µa V IL Input Low Voltage V V IH (2) Input High Voltage 2 V CC + 1 V V OL Output Low Voltage I OL = 2.1mA 0.4 V V OH Output High Voltage TTL I OH = 400µA 2.4 V Note: 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP. 2. Maximum DC voltage on Output is V CC +0.5V. Table 8. Read Mode AC Characteristics (1) (T A = 0 to 70 C, 40 to 85 C or 40 to 125 C; V CC = 5V ± 10%; V PP = V CC ) Symbol Alt Parameter Test Condition -80 (3) -100 Min Max Min Max Unit t AVQV t ACC Address Valid to Output Valid = V IL, GV PP = V IL ns t LQV t C Chip nable Low to Output Valid GV PP = V IL ns t GLQV t O Output nable Low to Output Valid = V IL ns t (2) HQZ t DF Chip nable High to Output Hi-Z GV PP = V IL ns t (2) GHQZ t DF Output nable High to Output Hi-Z = V IL ns t AXQX t OH Address Transition to Output Transition = V IL, GV PP = V IL 5 5 ns Note: 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions. 5/14

6 Figure 5. Read Mode AC Waveforms A0-A20 VALID VALID tavqv taxqx tglqv thqz GV PP Q0-Q15 tlqv tghqz Hi-Z AI02207 Table 9. Programming Mode DC Characteristics (1) (T A = 25 C; V CC = 6.25V ± 0.25V; V PP = 12V ± 0.25V) Symbol Parameter Test Condition Min Max Unit I LI Input Leakage Current V IL V IN V IH ±10 µa I CC Supply Current 50 ma I PP Program Current = V IL 50 ma V IL Input Low Voltage V V IH Input High Voltage 2.4 V CC V V OL Output Low Voltage I OL = 2.1mA 0.4 V V OH Output High Voltage TTL I OH = 2.5mA 3.5 V V ID A9 Voltage V Note: 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP. 6/14

7 Table 10. MARGIN MOD AC Characteristics (1) (T A = 25 C; V CC = 6.25V ± 0.25V; V PP = 12V ± 0.25V) Symbol Alt Parameter Test Condition Min Max Unit t A9HVPH t AS9 V A9 High to V PP High 2 µs t VPHL t VPS V PP High to Chip nable Low 2 µs t A10HH t AS10 V A10 High to Chip nable High (Set) 1 µs t A10LH t AS10 V A10 Low to Chip nable High (Reset) 1 µs t XA10X t AH10 Chip nable Transition to V A10 Transition 1 µs t XVPX t VPH Chip nable Transition to V PP Transition 2 µs t VPXA9X t AH9 V PP Transition to V A9 Transition 2 µs Note: 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP. Table 11. Programming Mode AC Characteristics (1) (T A = 25 C; V CC = 6.25V ± 0.25V; V PP = 12V ± 0.25V) Symbol Alt Parameter Test Condition Min Max Unit t AVL t AS Address Valid to Chip nable Low 1 µs t QVL t DS Input Valid to Chip nable Low 1 µs t VCHL t VCS V CC High to Chip nable Low 2 µs t VPHL t OS V PP High to Chip nable Low 1 µs t VPLVPH t PRT V PP Rise Time 50 ns t LH t PW Chip nable Program Pulse Width (Initial) µs t HQX t DH Chip nable High to Input Transition 2 µs t HVPX t OH Chip nable High to V PP Transition 2 µs t VPLL t VR V PP Low to Chip nable Low 1 µs t LQV t DV Chip nable Low to Output Valid 1 µs t HQZ (2) t DFP Chip nable High to Output Hi-Z ns t HAX t AH Chip nable High to Address Transition 0 ns Note: 1. V CC must be applied simultaneously with or before V PP and removed simultaneously or after V PP. 2. Sampled only, not 100% tested. Programming When delivered (and after each erasure for UV PROM), all bits of the are in the "1" state. Data is introduced by selectively programming "0"s into the desired bit locations. Although only "0"s will be programmed, both "1"s and "0"s can be present in the data word. The only way to change a "0" to a "1" is by die exposition to ultraviolet light (UV PROM). The is in the programming mode when V PP input is at 12.V, GV PP is at V IH and is pulsed to V IL. The data to be programmed is applied to 16 bits in parallel to the data output pins. The levels required for the address and data inputs are TTL. V CC is specified to be 6.25V ± 0.25V. 7/14

8 Figure 6. MARGIN MOD AC Waveforms V CC A8 A9 ta9hvph tvpxa9x GV PP tvphl txvpx ta10hh txa10x A10 Set A10 Reset ta10lh AI00736B Note: A8 High level = 5V; A9 High level = 12V. Figure 7. Programming and Verify Modes AC Waveforms A0-A20 VALID tavl thax Q0-Q15 DATA IN DATA OUT tqvl thqx thqz V CC tvchl thvpx tlqv GV PP tvphl tvpll tlh PROGRAM VRIFY AI02205 Note: GV PP High level = 12V. 8/14

9 Figure 8. Programming Flowchart NO YS ++n = 25 FAIL V CC = 6.25V, V PP = 12V ST MARGIN MOD NO n = 0 = 50µs Pulse VRIFY Last Addr YS YS NO RST MARGIN MOD CHCK ALL WORDS 1st: V CC = 6V 2nd: V CC = 4.2V ++ Addr AI02206 PRSTO III Programming Algorithm The PRSTO III Programming Algorithm allows the whole array to be programed with a guaranteed margin in a typical time of 100 seconds. Programming with PRSTO III consists of applying a sequence of 50µs program pulses to each word until a correct verify occurs (see Figure 8). During programing and verify operation a MARGIN MOD circuit must be activated to guarantee that each cell is programed with enough margin. No overprogram pulse is applied since the verify in MARGIN MOD provides the necessary margin to each programmed cell. Program Inhibit Programming of multiple s in parallel with different data is also easily accomplished. xcept for, all like inputs including GV PP of the parallel may be common. A TTL low level pulse applied to a 's input and V PP at 12V, will program that. A high level input inhibits the other s from being programmed. Program Verify A verify (read) should be performed on the programmed bits to determine that they were correctly programmed. The verify is accomplished with GV PP at V IL. Data should be verified with t LQV after the falling edge of. lectronic Signature The lectronic Signature (S) mode allows the reading out of a binary code from an PROM that will identify its manufacturer and type. This mode is intended for use by programming equipment to automatically match the device to be programmed with its corresponding programming algorithm. The S mode is functional in the 25 C ± 5 C ambient temperature range that is required when programming the. To activate the S mode, the programming equipment must force 11.5V to 12.5V on address line A9 of the, with V PP = V CC = 5V. Two identifier bytes may then be sequenced from the device outputs by toggling address line A0 from V IL to V IH. All other address lines must be held at V IL during lectronic Signature mode. Byte 0 (A0 = V IL ) represents the manufacturer code and byte 1 (A0 = V IH ) the device identifier code. For the STMicroelectronics, these two identifier bytes are given in Table 4 and can be read-out on outputs Q0 to Q7. RASUR OPRATION (applies to UV PROM) The erasure characteristics of the is such that erasure begins when the cells are exposed to light with wavelengths shorter than approximately 4000 Å. It should be noted that sunlight and some type of fluorescent lamps have wavelengths in the Å range. Research shows that constant exposure to room level fluorescent lighting could erase a typical in about 3 years, while it would take approximately 1 week to cause erasure when exposed to direct sunlight. If the is to be exposed to these types of lighting conditions for extended periods of time, it is suggested that opaque labels be put over the window to prevent unintentional erasure. The recommended erasure procedure for is exposure to short wave ultraviolet light which has a wavelength of 2537 Å. The integrated dose (i.e. UV intensity x exposure time) for erasure should be a minimum of 30 W-sec/cm 2. The erasure time with this dosage is approximately 30 to 40 minutes using an ultraviolet lamp with µw/cm 2 power rating. The should be placed within 2.5cm (1 inch) of the lamp tubes during the erasure. Some lamps have a filter on their tubes which should be removed before erasure. 9/14

10 Table 12. Ordering Information Scheme xample: -80 F 1 Device Type M27 Supply Voltage C = 5V ±10% Device Function 322 = 32 Mbit (2Mb x16) Speed -80 (1) = 80 ns -100 = 100 ns Package F = FDIP42W B = PDIP42 S = SDIP42 Temperature Range 1 = 0 to 70 C 3 = 40 to 125 C 6 = 40 to 85 C Note: 1. High Speed, see AC Characteristics section for further information. For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. Table 13. Revision History Date Revision Details July Feb Apr-2000 First Issue Programming Time changed Programming Flowchart changed (Figure 8) Presto III Programming Algorithm paragraph changed 40 to 85 C and 40 to 125 C temperature ranges added (Table 7, 8 and 12) 80ns speed class in High Speed AC measurement conditions 20-Sep-2000 AN620 Reference removed 29-Nov-2000 Note changed (Figure 7) 27-Feb-2001 SDIP42 Package added (Figure 11, Table 16) 27-Nov-2003 FDIP42W package lens changed 10/14

11 Table 14. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window (0.370" x 0.450"), Package Mechanical Data Symbol millimeters inches Typ Min Max Typ Min Max A A A B B C D D e ea eb K K L S α N Figure 9. FDIP42W - 42 pin Ceramic Frit-seal DIP, with window (0.370" x 0.450"), Package Outline A2 A A1 B1 B e D2 D S L α ea eb C N K 1 1 K1 FDIPW-C Note: Drawing is not to scale. 11/14

12 Table 15. PDIP42-42 pin Plastic DIP, 600 mils width, Package Mechanical Data millimeters inches Symbol Typ Min Max Typ Min Max A A A B B C D D e ea eb L S α N Figure 10. PDIP42-42 pin Plastic DIP, 600 mils width, Package Outline A2 A A1 B1 B e1 D2 L α ea eb C S D N 1 1 PDIP Note: Drawing is not to scale. 12/14

13 Table 16. SDIP42-42 pin Shrink Plastic DIP, 600 mils width, Package Mechanical Data millimeters inches Symbol Typ Min Max Typ Min Max A A A b b c D e ea eb L S N Figure 11. SDIP42-42 pin Shrink Plastic DIP, 600 mils width, Package Outline A2 A1 b2 b e D2 A L ea eb c S D N 1 1 SDIP Note: Drawing is not to scale. 13/14

14 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIS Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 14/14

M27C Mbit (1Mb x 8) UV EPROM and OTP EPROM

M27C Mbit (1Mb x 8) UV EPROM and OTP EPROM 8 Mbit (1Mb x 8) UV PROM and OTP PROM 5V ± 10% SUPPLY VOLTAG in RAD OPRATION ACCSS TIM: 45ns LOW POWR CONSUMPTION: Active Current 35mA at 5MHz Standby Current 100µA PROGRAMMING VOLTAG: 12.75V ± 0.25V 32