Balun. RF in. +3V DC to +6 V DC

Transcription

1 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE RFMD Green, RHS Cmpliant, Pb-Free Package: RF083 Prduct Descriptin RFMD s is a rbust 4 Watt high perfrmance LDMOS transistr designed fr peratin t 1600 MHz, It is an excellent slutin fr applicatins requiring high linearity and efficiency at a lw cst. The SLD- 1083CZ is typically used in the design f driver stages fr pwer amplifiers, repeaters, and RFID applicatins. The pwer transistr is fabricated using RFMD s latest, high perfrmance LDMOS II prcess. Optimum Technlgy Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS nin i Vgs 1 RF in Vgs 2 +3V DC t +6 V DC Balun +3V DC t +6 V DC n n 0 Features +28V DC Balun +28V DC Vds 1 RF ut Vds 2 4 Watt Output P 1dB Single Plarity Supply Vltage High Gain; 18 db at 915 MHz High Efficiency: 43% at 3W CW XeMOS II LDMOS Integrated ED Prtectin, Class 1B Applicatins Base Statin PA Driver Repeaters RFID Military Cmmunicatin GSM/CDMA Parameter Specificatin Min. Typ. Max. Unit Cnditin RF Specificatins V DS = 28.0 V, I DQ = 50 ma, T FLANGE = 25 C Frequency f Operatin 1600 MHz Gain db 3 Watt CW, 902 MHz t 928 MHz Drain Efficiency % 3 Watt CW, 915 MHz Input Return Lss db 3 Watt utput Pwer, 915 MHz Third Order IMD dbc 3 Watt PEP (Tw Tne), 915 MHz 1dB Cmpressin 4 Watt 915 MHz IS-95, 9 Ch Fwd, Offset = 750 KHz 21 dbm ACPR Integrated Bandwidth, ACPR = -55 db 29 dbm ACPR Integrated Bandwidth, ACPR = -45 db Thermal Resistance (Junctin - Case) 11 C/W DC Specificatins Frward Transcnductance 150 ma/v V GS Threshld 4.2 Vlts I DS = 3 ma, V DS = 28 V V GS Quiescent 4.2 Vlts I DS = 50 ma, V DS = 28 V V DS Breakdwn 65 Vlts 1 ma V DS current Input Capacitance (Gate t Surce) 5.2 pf V GS = 0 V, V DS = 28 V Reverse Capacitance (Gate t Drain) 0.2 pf V GS = 0 V, V DS = 28 V Output Capacitance (Drain t Surce) 3.2 pf V GS = 0 V, V DS = 28 V Drain t Surce Resistance 3.0 Ω V GS = 10 V, V DS = 250 mv RF MICRO DEVICES, RFMD, Optimum Technlgy Matching, Enabling Wireless Cnnectivity, PwerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks f RFMD, LLC. BLUETOOTH is a trademark wned by Bluetth SIG, Inc., U.S.A. and licensed fr use by RFMD. All ther trade names, trademarks and registered trademarks are the prperty f their respective wners. 2006, RF Micr Devices, Inc Thrndike Rad, Greensbr, NC Fr sales r technical supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm. 1 f 6

2 Abslute Maximum Ratings Parameter Rating Unit Drain Vltage (V DS ) 35 V Gate Vltage (V GS ) 20 V RF Input Pwer +30 dbm Lad Impedance fr Cntinuus 10:1 VSWR Operatin Withut Damage Output Device Channel Temperature +200 C Lead Temperature During Slder +270 C Reflw Operating Temperature Range -40 t +90 C Strage Temperature Range -40 t +100 C ESD Rating - Human Bdy Mdel 750 V MTTF - 85 C Leadframe, 200 C 1.2 x 10 6 Channel Operatin f this device beynd any ne f these limits may cause permanent damage. Fr reliable cntinuus peratin, the device vltage and current must nt exceed the maximum perating values specified in the table n page ne. Pin Diagram Pin 1 Pin 2 Cautin! ESD sensitive device. Exceeding any ne r a cmbinatin f the Abslute Maximum Rating cnditins may cause permanent damage t the device. Extended applicatin f Abslute Maximum Rating cnditins t the device may reduce device reliability. Specified typical perfrmance r functinal peratin f the device under Abslute Maximum Rating cnditins is nt implied. RHS status based n EU Directive 2002/95/EC (at time f this dcument revisin). The infrmatin in this publicatin is believed t be accurate and reliable. Hwever, n respnsibility is assumed by RF Micr Devices, Inc. ("RFMD") fr its use, nr fr any infringement f patents, r ther rights f third parties, resulting frm its use. N license is granted by implicatin r therwise under any patent r patent rights f RFMD. RFMD reserves the right t change cmpnent circuitry, recmmended applicatin circuitry and specificatins at any time withut prir ntice. Nte 1: Gate vltage must be applied t V GS lead cncurrently r after applicatin f drain vltage t prevent ptentially destructive scillatins. Bias vltages shuld never be applied t the transistr unless it is prperly terminated n bth input and utput. Nte 2: The required V GS crrespnding t a specific I DQ will vary frm device t device due t the nrmal die-t-die variatin in threshld vltage with LDMOS transistrs. Nte 3: The threshld vltage (V GSTH ) f LDMOS transistrs varies with device temperature. External temperature cmpensatin may be required Thrndike Rad, Greensbr, NC Fr sales r technical 2 f 6 supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm.

3 Typical Perfrmance Curves in 90 MHz Applicatin Circuit 7628 Thrndike Rad, Greensbr, NC Fr sales r technical supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm. 3 f 6

4 Pin Functin Descriptin 1 Gate Transistr RF input and gate bias vltage. The gate bias vltage must be temperature cmpensated t maintain cnstant bias current ver the perating temperature range. Care must be taken t prtect against vide transient that excedd the maximum input pwer r vltage. 2 Drain Transistr RF utput and drain bias vltage. Typical vltage 28 V. Flange Surce, GND Expsed area n the bttm side f the package needs t be mechanically attatched t the grund plane f the bard fr ptimum thermal and RF perfrmance. See munting instructins fr recmmendatin. Suggested Pad Layut Package Drawing Dimensins in inches Refer t drawing psted at fr tlerances Thrndike Rad, Greensbr, NC Fr sales r technical 4 f 6 supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm.

5 90 MHz Applicatin Circuit Bill f Materials MHz Applicatin Circuit Reference Descriptin Mfg Mfg Part Number Descriptin C1 CAP 68 pf 250 V 5% 0603 ATC 600S680JT250XT C2 CAP 18 pf 250 V 2% 0604 ATC 600S180GT250XT L1 IND, 16 nh 5% 0603 Cilcraft 0603CS-160XJB L2 IND, 9.5 nh 5% nh 0603 Cilcraft 0603CS-9N5XJB C10 CAP 0.1 UF 16 V 10% 0603 AVX 0603YG104ZA2A C11, C20 CAP 1000 pf 50 V 10% 603 AVX 06035C102KAT2A C12 CAP 68 pf 250 V 5% 603 ATC 600S680JT250XT C18 CAP 10 uf 35 V 20% TAN T ELECT Kemet T494D106M035AS C19, C22 CAP 0.1 uf 50 V 10% 805 Panasnic ECJ2YB1H104K J1, J2 Cnnectr SMA END Jhnsn J3 Cnnectr MTA SMD R/A 2 PIN Amp R1 RES 324 1/16 W 1% 603 Panasnic ERJ-3EKF3240V R2 RES 0 Ω jumper 805 Panasnic ERJ6GEY0R00V R3 POT TRIM 500 Ω 2 MM Panasnic EVM-2WSX80B52 R30 RES /16W 1% 603 Panasnic ERJ-EKF49R9V R5 RES 130 1/16 W 1% 603 Panasnic ERJ-3EKF1300V R7 RES 210 1/16W 1% 603 Phillips 9C06031A2100FKHFT R9 RES 0 1/16W 5% 603 Panasnic ERJ-3GSY0R00V R90 RES 1.0K 1/16W 1% 603 Panasnic ERJ-3EKF1001V RT1 THERMISTOR 100K 5% 603 Panasnic ERT-J1VV104J U1 IC VOLT REG 100 MA 5 V SOT-23 Natinal LM3480IM screws SCREW #2-56 PHILIPS PAN HEAD varius - 6 washers WASHER #2 FLAT SS varius - PCB PCB, 30 mils thick DK = 3.48 Rgers 4350 Heatsink machined aluminum varius - Part Number Reel Size Devices/Reel Ordering Infrmatin 7628 Thrndike Rad, Greensbr, NC Fr sales r technical supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm. 5 f 6

6 7628 Thrndike Rad, Greensbr, NC Fr sales r technical 6 f 6 supprt, cntact RFMD at (+1) r sales-supprt@rfmd.cm.