TDA x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD SUPERIOR OUTPUT POWER CAPABILITY: MULTIPOWER BCD TECHNOLOGY. 4 x 80W/2Ω MAX.

Size: px

Start display at page:

Download "TDA x 45W QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD SUPERIOR OUTPUT POWER CAPABILITY: MULTIPOWER BCD TECHNOLOGY. 4 x 80W/2Ω MAX."

Wilfred Douglas
5 years ago
Views:

1 TDA75 4 x 45 QUAD BRIDGE CAR RADIO AMPLIFIER PLUS HSD SUPERIOR OUTPUT POER CAPABILITY: 4 x /4Ω MAX. 4 x 45/4Ω EIAJ 4 x 14.4V, 1KHz, % 4 x /2Ω MAX. 4 x 77/2Ω EIAJ 4 x 14.4V, 1KHz, % EXCELLENT 2Ω DRIVING CAPABILITY HI-FI CLASS DISTORTION LO OUTPUT NOISE ST-BY FUNCTION MUTE FUNCTION AUTOMUTE AT MIN. SUPPLY VOLTAGE DE- TECTION LO EXTERNAL COMPONENT COUNT: INTERNALLY FIXED GAIN (26dB) NO EXTERNAL COMPENSATION NO BOOTSTRAP CAPACITORS ON BOARD 0.35A HIGH SIDE DRIVER PROTECTIONS: OUTPUT SHORT CIRCUIT TO GND, TO V S, ACROSS THE LOAD VERY INDUCTIVE LOADS OVERRATING CHIP TEMPERATURE ITH SOFT THERMAL LIMITER OUTPUT DC OFFSET DETECTION BLOCK AND APPLICATION DIAGRAM MULTIPOER BCD TECHNOLOGY MOSFET OUTPUT POER STAGE ORDERING NUMBER: TDA75 LOAD DUMP VOLTAGE FORTUITOUS OPEN GND REVERSED BATTERY ESD FLEXIATT25 DESCRIPTION The TDA75 is a breakthrough BCD (Bipolar / CMOS / DMOS) technology class AB Audio Power Amplifier in Flexiwatt 25 package designed for high power car radio. The fully complementary P-Channel/N-Channel output structure allows a rail to rail output voltage swing which, combined with high output current and minimised saturation losses sets new power references in the car-radio field, with unparalleled distortion performances. Vcc1 Vcc2 4µF 0nF ST-BY MUTE HSD HSD/V OFF DET OUT1+ IN1 OUT1- P-GND OUT2+ IN2 OUT2- P-GND OUT3+ IN3 OUT3- P-GND OUT4+ IN4 OUT4- P-GND AC-GND SVR TAB S-GND 0.47µF 47µF D94AU158C November 01 1/

2 TDA75 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CC Operating Supply Voltage 18 V V CC (DC) DC Supply Voltage 28 V V CC (pk) Peak Supply Voltage (t = ms) V I O Output Peak Current: Repetitive (Duty Cycle % at f = Hz) Non Repetitive (t = 0µs) P tot Power dissipation, (T case = C) T j Junction Temperature 1 C T stg Storage Temperature 55 to 1 C 9 A A PIN CONNECTION (Top view) 1 25 TAB P-GND2 ST-BY OUT2+ P-GND1 OUT1+ SVR IN1 IN2 S-GND IN4 IN3 AC-GND OUT3+ P-GND3 VCC OUT4+ MUTE OUT2- VCC OUT1- OUT3- OUT4- P-GND4 HSD D94AU159A THERMAL DATA Symbol Parameter Value Unit R th j-case Thermal Resistance Junction to Case Max. 1 C/ 2/

3 ELECTRICAL CHARACTERISTICS (VS = 13.2V; f = 1KHz; Rg = 0Ω; RL = 4Ω; Tamb = 25 C; Refer to the test and application diagram, unless otherwise specified.) Symbol Parameter Test Condition Min. Typ. Max. Unit I q1 Quiescent Current R L = ma V OS Output Offset Voltage Play Mode ± mv dv OS During mute ON/OFF output ± mv offset voltage G v Voltage Gain db dg v Channel Gain Unbalance ±1 db P o Output Power V S = 13.2V; THD = % V S = 13.2V; THD = 1% VS = 14.4V; THD = % V S = 14.4V; THD = 1% V S = 13.2V; THD = %, 2Ω V S = 13.2V; THD = 1%, 2Ω V S = 14.4V; THD = %, 2Ω VS = 14.4V; THD = 1%, 2Ω P o EIAJ EIAJ Output Power (*) V S = 13.7V; R L =4Ω V S = 13.7V; R L =2Ω Po max. Max. Output Power (*) VS = 14.4V; RL =4Ω V S = 14.4V; R L =2Ω THD Distortion P o =4 P o = 15; R L =2Ω e No Output Noise A eighted Bw = Hz to KHz SVR Supply Voltage Rejection f = 0Hz; V r = 1Vrms db f ch High Cut-Off Frequency P O = KHz R i Input Impedance 0 1 KΩ C T Cross Talk f = 1KHz P O =4 f = KHz P O =4 I SB St-By Current Consumption V St-By = 1.5V 75 µa I pin4 St-by pin Current VSt-By = 1.5V to 3.5V ± µa V SB out St-By Out Threshold Voltage (Amp: ON) 3.5 V V SB in St-By in Threshold Voltage (Amp: OFF) 1.5 V A M Mute Attenuation P Oref =4 90 db V M out Mute Out Threshold Voltage (Amp: Play) 3.5 V V Min Mute In Threshold Voltage (Amp: Mute) 1.5 V V AM in V S Automute Threshold (Amp: Mute) Att db; P Oref =4 (Amp: Play) V Att < 0.1dB; P O = V I pin22 Muting Pin Current V MUTE = 1.5V µa (Sourced Current) V MUTE = 3.5V µa HSD SECTION V dropout Dropout Voltage IO = 0.35A; VS = 9 to 16V V I prot Current Limits 0 0 ma OFFSET DETECTOR SECTION V M_ON Mute Voltage for DC offset V stby =5V 8 V VM_OFF detection enabled 6 V V OFF Detected Differential Output Offset V stby = 5V; V mute =8V ±2 ±3 ±4 V V 25_T Pin 25 Voltage for Detection = TRUE V stby = 5V; V mute =8V VOFF > ±4V V V 25_F Pin 25 Voltage for Detection = FALSE (*) Saturated square wave output. V stby = 5V; V mute =8V V OFF > ±2V TDA75 % % µv µv db db 12 V 3/

4 TDA75 Figure 1: Standard Test and Application Circuit C8 C7 20µF Vcc1-2 Vcc3-4 ST-BY MUTE IN1 R1 K R2 47K C1 C9 1µF C 1µF OUT1 OUT2 IN C2 18 OUT3 IN C3 21 IN OUT4 C4 S-GND C5 0.47µF SVR C6 47µF HSD TAB D95AU335B 4/

5 TDA75 Figure 2: P.C.B. and component layout of the figure 1 (1:1 scale) COMPONENTS & TOP COPPER LAYER BOTTOM COPPER LAYER 5/

6 TDA75 Figure 3. Quiescent current vs. supply voltage. Id (ma) Vi = 0 RL = 4 Ohm Vs (V) Figure 4. Output power vs. supply voltage. Po () 75 Po-max 65 RL=4 Ohm 55 f=1 KHz THD= % THD=1 % Vs (V) Figure 5. Output power vs. supply voltage. 1 Po() 1 Po-max RL=2 Ohm f=1 KHz THD= % THD=1% Vs (V) Figure 7. Distortion vs. output power Figure 6. Distortion vs. output Power THD(%) Vs= 14.4 V RL= 4Ohm f=khz f=1khz Po() Figure 8. Distortion vs. frequency. THD(%) THD (%) 1 Vs=14.4 V RL= 2 Ohm f=khz 1 Vs = 14.4 V RL=4 Ohm Po = f=1khz Po () 6/ f(hz)

7 TDA75 Figure 9. Distortion vs. frequency. THD(%) Figure. Crosstalk vs. frequency. CROSSTALK (db) Vs=14.4V RL=2 Ohm Po= 8 RL= 4Ohm Po= 4 Rg= 0 Ohm f(hz) f(hz) Figure 11. Supply voltage rejection vs. frequency. SVR(dB) 0 90 Rg= 0 Ohm Vripple=1 Vrms f(hz) Figure 12. Output attenuation vs. supply voltage OUT ATTN (db) RL= 4 Ohm Po= 4 ref Vs (V) Figure 13. Output noise vs. source resistance En (uv) Vs= 14.4V RL=4 Ohm 22-22KHz lin. A wgtd Rg(Ohm) Figure 14. Power dissipation & efficiency vs. output power (sine-wave operation) 90 Ptot() 0 Vs=13.2V RL=4 x 4 Ohm f=1 KHz SINE n(%) Po () n Ptot 7/

8 TDA75 Figure 15. Power dissipation vs. ouput power (Music/Speech Simulation) Ptot () Vs= 13.2V RL=4 x 4 Ohm GAUSSIANNOISE CLIP START Po () DC OFFSET DETECTOR The TDA75 integrates a DC offset detector to avoid that an anomalous DC offset on the inputs of the amplifier may be multiplied by the gain and result in a dangerous large offset on the outputs which may lead to speakers damage for overheating. The feature is enabled by the MUTE pin and works with the amplifier umuted and with no signal on the inputs. The DC offset detection is signaled out on the HSD pin. APPLICATION HINTS (ref. to the circuit of fig. 1) SVR Besides its contribution to the ripple rejection, the SVR capacitor governs the turn ON/OFF time sequence and, consequently, plays an essential role in the pop optimization during ON/OFF transients.to conveniently serve both needs, ITS MINIMUM RECOMMENDED VALUE IS µf. INPUT STAGE The TDA75 s inputs are ground-compatible and can stand very high input signals (± 8Vpk) without any performances degradation. If the standard value for the input capacitors () is adopted, the low frequency cut-off will amount to 16 Hz. Figure 16. Power dissipation vs. output power (Music/Speech Simulation) Ptot () Vs= 13.2V 55 RL= 4 x 2 Ohm GAUSSIAN NOISE 45 CLIP START Po () STAND-BY AND MUTING STAND-BY and MUTING facilities are both CMOS-COMPATIBLE. If unused, a straight connection to Vs of their respective pins would be admissible. Conventional low-power transistors can be employed to drive muting and stand-by pins in absence of true CMOS ports or microprocessors. R-C cells have always to be used in order to smooth down the transitions for preventing any audible transient noises. About the stand-by, the time constant to be assigned in order to obtain a virtually pop-free transition has to be slower than 2.5V/ms. HEATSINK DEFINITION Under normal usage (4 Ohm speakers) the heatsink s thermal requirements have to be deduced from fig. 15, which reports the simulated power dissipation when real music/speech programmes are played out. Noise with gaussiandistributed amplitude was employed for this simulation. Based on that, frequent clipping occurence (worst-case) will cause Pdiss = 26. Assuming Tamb = C and T CHIP = 1 C as boundary conditions, the heatsink s thermal resistance should be approximately 2 C/. This would avoid any thermal shutdown occurence even after longterm and full-volume operation. 8/

9 TDA75 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F (1) G G H (2) H H H L (2) L L2 (2) L L L M M N O R R R R R V 5 (Typ.) V1 3 (Typ.) V2 (Typ.) V3 45 (Typ.) (1): dam-bar protusion not included (2): molding protusion included OUTLINE AND MECHANICAL DATA Flexiwatt25 V3 H3 H H1 H2 A O R3 L2 L3 L4 N R4 V2 R R2 L L1 V1 V1 R2 R1 D L5 R1 R1 V G G1 F M E M1 B C V FLEX25ME 9/

10 TDA75 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 01 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. /

TDA x 40W QUAD BRIDGE CAR RADIO AMPLIFIER

TDA x 40W QUAD BRIDGE CAR RADIO AMPLIFIER TDA7386 4 x 40W QUAD BRIDGE CAR RADIO AMPLIFIER HIGH OUTPUT POWER CAPABILITY: 4 x 45W/4Ω MAX. 4 x 40W/4Ω EIAJ 4 x 28W/4Ω @ 14.4V, 1KHz, 10% 4 x 24W/4Ω @ 13.2V, 1KHz, 10% LOW DISTORTION LOW OUTPUT NOISE