Low Profile, High Current IHLP Inductors
|
|
|
- Howard Chase
- 5 years ago
- Views:
Transcription
1 IHP-77MZ-5A ow Profile, High Current IHP Inductors Manufactured under one or more of the following: US Patents; 6,19,375/6,,7/6,9,9/6,6,. Several foreign patents, and other patents pending. STANDARD EECTRICA SPECIFICATIONS INDUCTANCE + %/- 1 % AT 1 khz,.5 V, A (μh) DCR TYP. 5 C (m ) DCR MAX. 5 C (m ) HEAT RATING CURRENT DC TYP. (A) (3) SATURATION CURRENT DC TYP. (A) () Notes (1) All test data is referenced to 5 C ambient () Operating temperature range - 55 C to C (3) DC current (A) that will cause an approximate T of C () DC current (A) that will cause to drop approximately % (5) The part temperature (ambient + temp. rise) should not exceed 155 C under worst case operating conditions. Circuit design, component placement, PWB trace size and thickness, airflow and other cooling provisions all affect the part temperature. Part temperature should be verified in the end application. FEATURES High temperature rating, up to 155 C Shielded construction owest DCR/μH, in this package size Handles high transient current spikes without saturation Ultra low buzz noise, due to composite construction AEC- qualified Material categorization: For definitions of compliance please see APPICATIONS Engine and transmission control units Diesel injection drivers DC/DC converters for entertainment/navigation systems Noise suppression for motors - Windshield wipers - Power seats - Power mirrors - Heating and ventilation blowers - HID lighting ED drivers DIMENSIONS in inches [millimeters].7 ±.1 [. ±.3].51 [13.] Max..197 ±.15 [5. ±.31] Typical Pad ayout.915 [3.].7 [1.].55 [11.56].5 ±.1 [. ±.3].73 ±.1 [1.5 ±.3] DESCRIPTION IHP-77MZ-5A 1 μh ± % ER e3 MODE INDUCTANCE VAUE INDUCTANCE TOERANCE PACKAGE CODE JEDEC EAD (Pb)-FREE STANDARD GOBA PART NUMBER I H P 7 7 M Z E R 1 1 M 5 A PRODUCT FAMIY SIZE PACKAGE CODE INDUCTANCE VAUE TO. SERIES Revision: -Jan-1 1 Document Number: 335 ARE SUBJECT TO SPECIFIC DISCAIMERS, SET FORTH AT
2 IHP-77MZ-5A PERFORMANCE GRAPHS 1. IHP 77MZ-5A.7 µh 1. IHP 77MZ-5A 1. µh IHP 77MZ-5A. µh 1 5 IHP 77MZ-5A 3.3 µh IHP 77MZ-5A.7 µh 1 1 IHP-77MZ-5A 6. uh IHP 77MZ-5A 1 µh IHP 77MZ-5A 15 µh Revision: -Jan-1 Document Number: 335 ARE SUBJECT TO SPECIFIC DISCAIMERS, SET FORTH AT
3 IHP-77MZ-5A PERFORMANCE GRAPHS IHP-77MZ-5A µh IHP 77MZ µh IHP 77MZ-5A 7 µh IHP77MZ-5A 75 µh IHP 77MZ-5A µh IHP 77MZ-5A 1 µh Revision: -Jan-1 3 Document Number: 335 ARE SUBJECT TO SPECIFIC DISCAIMERS, SET FORTH AT
4 IHP-77MZ-5A PERFORMANCE GRAPHS: INDUCTANCE AND VS. FREUENCY IHP 77MZ-5A.7 µh IHP 77MZ-5A 1. µh FREUENCY (MHz) FREUENCY (MHz) IHP 77MZ-5A. µh IHP 77MZ-5A 3.3 µh FREUENCY (MHz) FREUENCY (MHz) IHP 77MZ-5A.7 µh IHP-77MZ-5A 6. uh FREUENCY (MHz) FREUENCY (MHz) IHP 77MZ-5A 1 µh IHP 77MZ-5A 15 µh FREUENCY (MHz) FREUENCY (MHz) Revision: -Jan-1 Document Number: 335 ARE SUBJECT TO SPECIFIC DISCAIMERS, SET FORTH AT
5 IHP-77MZ-5A PERFORMANCE GRAPHS: INDUCTANCE AND VS. FREUENCY IHP-77MZ-5A µh IHP 77MZ-5A 33 µh FREUENCY (MHz) FREUENCY (MHz) IHP 77MZ-5A 7 µh IHP77MZ-5A 75 µh FREUENCY (MHz) FREUENCY (MHz) 6 IHP 77MZ-5A µh IHP 77MZ-5A 1 µh FREUENCY (MHz) FREUENCY (MHz) Revision: -Jan-1 5 Document Number: 335 ARE SUBJECT TO SPECIFIC DISCAIMERS, SET FORTH AT
6 egal Disclaimer Notice Vishay Disclaimer A PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE REIABIITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 11/65/EU of The European Parliament and of the Council of June, 11 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive /95/EC. We confirm that all the products identified as being compliant to Directive /95/EC conform to Directive 11/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS79A standards. Revision: -Oct-1 1 Document Number: 91
FEATURES [12.9] Max [6.40] Max.
![FEATURES [12.9] Max [6.40] Max.](/thumbs/90/103914422.jpg "FEATURES [12.9] Max [6.40] Max.")
IHP-55FD-5A IHP Automotive Inductors, High Temperature (155 C) Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT 1 khz,.5 V, A (μh)
FEATURES. IHLP-3232DZ μh ± 20 % ER e3 MODEL INDUCTANCE VALUE INDUCTANCE TOLERANCE PACKAGE CODE JEDEC LEAD (Pb)-FREE STANDARD
IHP-33DZ- IHP Commercial Inductors, High Temperature ( C) Series DESIGN SUPPORT TOOS click logo to get started Models Available STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,. V, A (μh) Design
High Current Through Hole Inductor, High Temperature Series
High Current Through Hole Inductor, High Temperature Series STANDARD EECTRICA SPECIFICATIONS INDUCTANCE ± % AT khz,. V, A (μh) DCR TYP. C (m ) DCR MAX. C (m ) HEAT RATING CURRENT DC TYP. (A) () SATURATION
Single Phase Rectifier Bridge, 1.2 A
Single Phase Rectifier Bridge, 1.2 A FEATURES VS-1KAB-E Series Ease of assembly, installation, inventory High surge rating Compact Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
Single Phase Rectifier Bridge, 1.9 A
Single Phase Rectifier Bridge, 1.9 A VS- Series PRODUCT SUMMARY I O V RRM Package Circuit 1.9 A 1 V to 1 V Single phase bridge FEATURES Suitable for printed circuit board mounting Leads on standard 2.54
Single-Line ESD Protection in SOT-23
Single-Line ESD Protection in FEATURES 3 Single-line ESD-protection device ESD-protection acc. IEC 61000-4-2 contact discharge air discharge 1 2 20421 20512 1 Space saving package AEC-Q101 qualified e3-
Single-Line ESD Protection in SOT-23
Single-Line ESD Protection in 3 1 2 20421 MARKING (example only) XX YYY XX 20512 YYY = type code (see table below) XX = date code 20357 1 FEATURES Single-line ESD-protection device ESD-protection acc.
Small Signal Fast Switching Diode
N45WS-G Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 8/K per 3" reel (8 mm tape), K/box 8/3K per 7" reel (8 mm tape), 5K/box FEATURES Silicon
High Frequency (up to 20 GHz) Resistor, Thin Film Surface Mount Chip
High Frequency (up to 20 GHz) Resistor, Thin Film Surface Mount Chip series chip resistors are designed with low internal reactance. They function as almost pure resistors on a very high range of frequencies.
50 W Power Resistor, Thick Film Technology, TO-220
50 W Power Resistor, Thick Film Technology, TO-220 FEATURES 50 W at 25 C heatsink mounted Adjusted by sand trimming Leaded or surface mount versions High power to size ratio Non inductive element Material
Zener Diodes FEATURES
ZPYV9 to ZPY Zener Diodes PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT FEATURES Silicon planar power Zener diodes For use in stabilizing and clipping circuits with high power rating The Zener voltages
High Intensity Red Low Current 7-Segment Display
TDSR5, TDSR6 High Intensity Red Low Current 7-Segment Display 9236 DESCRIPTION This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP
Glass Passivated Power Voltage-Regulating Diodes
Z4KE0A thru Z4KE200A Glass Passivated Power Voltage-Regulating Diodes DO-204AL (DO-4) FEATURES Plastic MELF package Ideal for automated placement Glass passivated chip junction Low Zener impedance Low
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers
High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers FEATURES esmp Series Very low profile - typical height of. mm Available Ideal for automated placement Low forward voltage drop,
Small Signal Zener Diodes
Small Signal Zener Diodes FEATURES Zener voltage specified at 5 μa Maximum delta V Z given from μa to μa Very high stability Low noise AEC-Q qualified Material categorization: For definitions of compliance
Three Phase Bridge (Power Modules), 25 A to 35 A
Three Phase Bridge (Power Modules), 25 A to 35 A D-63 PRODUCT SUMMARY I O 25 A to 35 A V RRM V to 6 V Package D-63 Circuit Three phase bridge FEATURES Universal, 3 way terminals: push-on, wrap around or
Power Resistors for Mounting onto a Heatsink Thick Film Technology
Power Resistors for Mounting onto a Heatsink Thick Film Technology FEATURES 1% tolerance available High power rating = 200 W Wide ohmic value range = 0.046 to 1 M Non inductive Easy mounting Low thermal
High Efficiency LED in Ø 3 mm Tinted Diffused Package
TLHY44KL2 High Efficiency LED in Ø 3 mm Tinted Diffused Package DESCRIPTION 922 The TLHY44KL2 series was developed for standard applications like general indicating and lighting purposes. It is housed
Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces FEATURES
www.vishay.com Low Capacitance ESD Protection Diodes for High-Speed Data Interfaces 2 746 MARKING (example only) XX 2052 YYY XX Bar = cathode marking YYY = type code (see table below) XX = date code 2057
ESD-Protection Diode in LLP1006-2L
VESD5A1A-HD1 ESD-Protection Diode in LLP16-2L 2855 MARKING (example only) XY Bar = cathode marking X = date code Y = type code (see table below) 2 1 21121 2856 FEATURES Ultra compact LLP16-2L package Low
Surface Mount Power Resistor Thick Film Technology
Surface Mount Power Resistor Thick Film Technology FEATURES AEC-Q200 qualified 20 W at 25 C case temperature Surface mounted resistor - TO-263 (D 2 PAK) style package Wide resistance range from 0.01 to
P-Channel 8 V (D-S) MOSFET
SPICE Device Model Si235CDS P-Channel 8 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted
High Intensity Red Low Current 7-Segment Display
TDSR50, TDSR60 High Intensity Red Low Current 7-Segment Display 19236 DESCRIPTION This series defines a new standard for low current displays. It is a single digit 7-segment LED display utilizing AllnGaP
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 7 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1¾ plastic package with base terminal and daylight blocking filter. Filter bandwidth
N-Channel 25 V (D-S) MOSFET
N-Channel 25 V (D-S) MOSFET DESCRIPTION The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the
FEATURES. Package. PARAMETER SYMBOL PB4006 PB4008 PB4010 UNIT Maximum repetitive peak reverse voltage V RRM V 40 T A = 25 C (2) 4.
Enhanced isocink+ TM Bridge Rectifiers + isocink+ ~ ~ - - ~ ~ + ~ ~ Case Style PB FEATURES UL recognition file number E32394 (QQQX2) UL 557 (see *) Enhanced high-current density single in-line package
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier
High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier esmp Series 2 TO-277A (SMPC) Anode Cathode Anode 2 FEATURES Very low profile - typical height of. mm Ideal for automated placement
Hyperfast Rectifier, 2 x 5 A FRED Pt
Hyperfast Rectifier, 2 x 5 A FRED Pt VS-CSH02HM3 K TO-277A (SMPC) 2 K Cathode Anode Anode 2 FEATURES Hyperfast recovery time, reduced Q rr, and soft recovery 75 C maximum operating junction temperature
Resistor LED for 12 V Supply Voltage
Resistor LED for 12 V Supply Voltage V S 19228-2 Out 19228-1 FEATURES With current limiting resistor for 12 V Cost effective: save space and resistor cost Standard Ø 3 mm (T-1) package High luminous intensity
Resistor LED for 12 V Supply Voltage
TLRH44.CU, TLRO44.CU, TLRY44.CU, TLRG44.CU, TLRP44.CU Resistor LED for 12 V Supply Voltage V S DESCRIPTION 19228-2 Out 19228-1 These devices are developed for the automotive industry and other industries
Surface Mounted Power Resistor Thick Film Technology
Surface Mounted Power Resistor Thick Film Technology DIMENSIONS in millimeters FEATURES AEC-Q200 qualified 25 W at 25 C case temperature Surface mounted resistor - TO-252 (DPAK) style package Wide resistance
High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package
TLHB51, TLHB512 High Efficiency Blue LED, Ø 5 mm Untinted Non-Diffused Package DESCRIPTION 19223 This device has been designed in GaN on SiC technology to meet the increasing demand for high efficiency
Dual Common Cathode Schottky Rectifier
Dual Common Cathode Schottky Rectifier TO-220AB MBR20xxCT PIN PIN 3 CASE 2 3 ITO-220AB 2 3 MBRF20xxCT PIN PIN 3 2 FEATURES Power pack Guardring for overvoltage protection Low power loss, high efficiency
Photovoltaic Solar Cell Protection Schottky Rectifier
Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low V F =.3 V at I F = 5. A TMBS FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation
High Voltage Glass Passivated Junction Plastic Rectifier
High Voltage Glass Passivated Junction Plastic Rectifier SUPERECTIFIER FEATURES Superectifier structure for high reliability application Cavity-free glass-passivated junction Low leakage current High forward
TLRG4420CU, TLRH4420CU, TLRO4420CU, TLRY4420CU Resistor LED for 12 V Supply Voltage
TLRG442CU, TLRH442CU, TLRO442CU, TLRY442CU Resistor LED for 12 V Supply Voltage V S DESCRIPTION 19228-2 Out 19228-1 These devices are developed for the automotive industry with special requirements as
High Voltage, Input Rectifier Diode, 10 A
VS-ETS..FPPbF Series, VS-ETS..FP-M3 Series High Voltage, Input Rectifier Diode, A TO-22 FULL-PAK PRODUCT SUMMARY Base cathode 3 Cathode Anode Package TO-22FP I F(AV) A V R 8 V to 2 V V F at I F. V I FSM
Power Resistor, for Mounting onto a Heatsink Thick Film Technology
Power Resistor, for Mounting onto a Heatsink Thick Film Technology FEATURES 5 W to 50 W High power rating Manufactured in cermet thick film technology, these power resistors exhibit remarkable characteristics
Silicon NPN Phototransistor
Silicon NPN Phototransistor DESCRIPTION 94 8638-1 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-3/4 plastic package with lens. It is sensitive to visible and near infrared
4-Channel EMI-Filter with ESD-Protection FEATURES VEMI45AA-HNH VEMI45AA-HNH-GS MOLDING COMPOUND FLAMMABILITY RATING
4-Channel EMI-Filter with ESD-Protection 2383 8 7 6 5 9 1 2 3 4 MARKING (example only) Dot = pin 1 marking Y = type code (see table below) XX = date code 2522 YXX 2719 FEATURES Ultra compact LLP1713-9L
Schottky Rectifier, 2 A
Schottky Rectifier, 2 A Cathode Anode DO-204AL PRODUCT SUMMARY Package DO-204AL (DO-4) I F(AV) 2 A V R 60 V V F at I F 0.55 V I RM max. 0 ma at 25 C T J max. 50 C Diode variation Single die E AS 4.0 mj
Silicon NPN Phototransistor
TEFT43 Silicon NPN Phototransistor DESCRIPTION 94 8636-2 TEFT43 is a silicon NPN phototransistor with high radiant sensitivity in black, T-1 plastic package with daylight blocking filter. Filter bandwidth
High Performance Schottky Rectifier, 100 A
High Performance Schottky Rectifier, A VS-BGQHF4 Cathode Anode PowerTab PRODUCT SUMMARY Package PowerTab I F(AV) A V R V V F at I F 0.82 V I RM 180 ma at 125 C T J max. 175 C Diode variation Single die
Silicon NPN Phototransistor
TEKT54S Silicon NPN Phototransistor 16733 DESCRIPTION TEKT54S is a silicon NPN phototransistor with high radiant sensitivity, molded in a plastic package with side view lens and daylight blocking filter.
Ultrafast Avalanche SMD Rectifier
Ultrafast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Low forward voltage Soft recovery characteristic
Three Phase Bridge, 130 A to 160 A (Power Modules)
Three Phase Bridge, 3 A to 6 A (Power Modules) VS-3-6MT..KPbF Series PRODUCT SUMMARY I O V RRM Package Circuit MTK 3 A to 6 A 8 V to 6 V MT-K Three phase bridge FEATURES Package fully compatible with the
Dual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 Schottky Rectifier, 1.1 A
Schottky Rectifier, 1.1 A Cathode Anode DO-204AL PRODUCT SUMMARY Package DO-204AL (DO-41) I F(AV) 1.1 A V R 50 V, 60 V V F at I F See Electrical table I RM max. 11.0 ma at 125 C T J max. 150 C Diode variation
Low Current LED in Ø 5 mm Tinted Diffused Package
TLLR54., TLLY54., TLLG54. Low Current LED in Ø 5 mm Tinted Diffused Package 9223 PRODUCT GROUP AND PACKAGE DATA Product group: LED Package: 5 mm Product series: low current Angle of half intensity: ± 25
High Performance Schottky Rectifier, 240 A
High Performance Schottky Rectifier, 240 A HALF-PAK (D-67) PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Base cathode 240 A 150 V HALF-PAK (D-67) Single diode FEATURES 175 C T J operation
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay
Photovoltaic MOSFET Driver with Integrated Fast Turn-Off, Solid-State Relay i7966_6 Turn Off FEATURES Open circuit voltage at I F = ma, 8. V typical Short circuit current at I F = ma, 5 μa typical Isolation
N-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
High Performance Schottky Rectifier, 200 A
High Performance Schottky Rectifier, 200 A VS-203CNQPbF TO-244 PRODUCT SUMMARY I F(AV) V R Package Circuit Lug terminal anode Lug terminal anode 2 Base common cathode 200 A V TO-244 Two diodes common cathodes
Surface Mount ESD Capability Rectifiers
Surface Mount ESD Capability Rectifiers Top View SlimSMA DO-22AC PRIMARY CHARACTERISTICS I F(AV) 3.0 A V RRM V, 200 V, 400 V, 600 V I FSM 40 A V F at I F = 3.0 A (T A = 25 C) 0.86 V I R 0 μa T J max. 75
High Current Density Surface Mount Glass Passivated Rectifiers
SPB, SPD, SPG, SPJ, SPK, SPM High Current Density Surface Mount Glass Passivated Rectifiers esmp Series DO-22AA (SMP) FEATURES Very low profile - typical height of. mm Available Ideal for automated placement
High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW
TSAL44 High Power Infrared Emitting Diode, 94 nm, GaAlAs, MQW DESCRIPTION 94 8636 TSAL44 is an infrared, 94 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic
Enhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers + ~ ~ - - ~ ~ + isocink+ Case Style BU + ~ ~ - * Tested to UL standard for safety electrically isolated semiconductor devices. UL 1557 4th edition. Dielectric tested
Fast Avalanche SMD Rectifier
BYG2K-E3/HE3, BYG2M-E3/HE3 Fast Avalanche SMD Rectifier DO-24AC (SMA) FEATURES Low profile package Ideal for automated placement Glass passivated pallet chip junction Low reverse current Soft recovery
Schottky Rectifier, 9 A
Schottky Rectifier, 9 A Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) 9 A V R 30 V, 35 V, 40 V, 45 V V F at I F 0.42 V I RM max. 70 ma at 25 C T J max. 50 C Diode variation Single die
Standard Recovery Diodes (Stud Version), 70 A
Standard Recovery Diodes (Stud Version), 70 A VS- FEATURES High surge current capability Designed for a wide range of applications Stud cathode and stud anode version Leaded version available DO-203AB
Single Phase Rectifier Bridge, 2 A
Single Phase Rectifier Bridge, 2 A 2KBP Series FEATURES Suitable for printed circuit board mounting Compact construction RoHS COMPLIANT D-44 PRODUCT SUMMARY I O V RRM 2 A 50 to 1000 V High surge current
Insulated Ultrafast Rectifier Module, 210 A
Insulated Ultrafast Rectifier Module, 2 A SOT-227 1 4 2 3 FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T J max.
Silicon PIN Photodiode
BPV Silicon PIN Photodiode DESCRIPTION 94 8390 BPV is a PIN photodiode with high speed and high radiant sensitivity in clear, T-¾ plastic package. It is sensitive to visible and near infrared radiation.
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH
High Speed Infrared Emitting Diode, 850 nm, GaAlAs, DH DESCRIPTION is an infrared, 850 nm side looking emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
Silicon PIN Photodiode, RoHS Compliant
Silicon PIN Photodiode, RoHS Compliant DESCRIPTION 948642 is a high sensitive silicon planar photodiode in a standard TO-18 hermetically sealed metal case with a glass lens. A precise alignment of the
Enhanced isocink+ Bridge Rectifiers
Enhanced isocink+ Bridge Rectifiers isocink+ - ~ ~ + Case Style BU * Tested to UL standard for safety electrically isolated semiconductor devices. UL 557 th edition. Dielectric tested to maximum case,
USB-OTG BUS-Port ESD-Protection for V BUS = 12 V
USB-OTG BUS-Port ESD-Protection for V BUS = 12 V 6 5 4 1 2 3 MARKING (example only) 2517 Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 7 212 XX YY 21 1 FEATURES Ultra compact LLP75-7L
Standard Recovery Diodes, (Stud Version), 85 A
Standard Recovery Diodes, (Stud Version), 85 A FEATURES High surge current capability Stud cathode and stud anode version Leaded version available Types up to 400 V V RRM Designed and qualified for industrial
Photovoltaic Solar Cell Protection Schottky Rectifier, 15 A
Photovoltaic Solar Cell Protection Schottky Rectifier, Cathode Anode DO-204AR PRODUCT SUMMARY Package DO-204AR I F(AV) V R 30 V, 35 V, 40 V, 45 V V F at I F 0.48 V I RM max. 70 ma at 125 C T J max. 150
Standard Recovery Diodes (Stud Version), 150 A
Standard Recovery Diodes (Stud Version), 150 A DO-205AA (DO-8) PRODUCT SUMMARY I F(AV) 150 A Package DO-205AA (DO-8) Circuit configuration Single diode FEATURES Alloy diode High current carrying capability
SA5.0A thru SA170CA. TRANSZORB Transient Voltage Suppressors. Vishay General Semiconductor. FEATURES PRIMARY CHARACTERISTICS
TRANSZORB Transient Voltage Suppressors DO-204AC (DO-15) PRIMARY CHARACTERISTICS V WM 5.0 V to 170 V V BR (uni-directional) 6.4 V to 209 V V BR (bi-directional) 6.4 V to 209 V P PPM 500 W P D 3.0 W I FSM
Thick Film Resistor Networks, Dual-In-Line, Molded DIP
Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES Isolated, bussed, and dual terminator schematics available 0.160" (4.06 mm) maximum seated height and rugged, molded case construction Thick
Silicon Phototransistor in 0805 Package
Silicon Phototransistor in 85 Package 243 DESCRIPTION is a high speed silicon NPN epitaxial planar phototransistor in a miniature 85 package for surface mounting on printed boards. The device is sensitive
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
High Speed Infrared Emitting Diode, 89 nm, GaAlAs Double Hetero 94 839 DESCRIPTION is an infrared, 89 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded
Silicon PIN Photodiode
Silicon PIN Photodiode DESCRIPTION is a silicon PIN photodiode with high radiant sensitivity in clear, T-1 plastic package. It is sensitive to visible and near infrared radiation. FEATURES Package type:
Automotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
Silicon PIN Photodiode
BPVNF Silicon PIN Photodiode DESCRIPTION 640- BPVNF is a PIN photodiode with high speed and high radiant sensitivity in black, T-¾ plastic package with daylight blocking filter. Filter bandwidth is matched
P-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
Infrared Emitting Diode, 950 nm, GaAs
TSUS52, TSUS521, TSUS522 Infrared Emitting Diode, 95 nm, GaAs DESCRIPTION 94 839 TSUS52 is an infrared, 95 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package. FEATURES Package
"High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A
"High Side Chopper" IGBT SOT-227 (Trench IGBT), A FEATURES Trench IGBT technology VS-GTNA2UX SOT-227 PRODUCT SUMMARY V CES 2 V I C DC A at 7 C V CE(on) typical at A, 25 C 2.36 V Package SOT-227 Circuit
Filter Inductors, Toroid, Radial Leaded
TE, TD Filter Inductors, Toroid, Radial Leaded STANDARD ELECTRICAL SPECIFICATIONS (applies to core only) TE-3 TD-3 MODEL TE-4 TD-4 TE-5 TD-5 TC TEMPERATURE COEFFICIENT FEATURES Choice of encapsulated (TE)
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
TSAL76 High Power Infrared Emitting Diode, 94 nm, GaAlAs/GaAs DESCRIPTION 94 8389 TSAL76 is an infrared, 94 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted
Ultrafast Rectifier V AC 1500 V
Ultrafast Rectifier FEATURES TO-0AC ITO-0AC Power pack Glass passivated pellet chip junction Ultrafast recovery time Low switching losses, high efficiency High forward surge capability UG8xT PIN CASE TO-63AB
Silicon PIN Photodiode, RoHS Compliant
BPW83 DESCRIPTION 94 8490 BPW83 is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 870
Small Signal Fast Switching Diode FEATURES
Small Signal Fast Switching Diode = Cathode = Anode 6 MARKING (example only) FEATURES These diodes are also available in other case styles including the DO- case with the type designation N8, the MiniMELF
N-Channel 60 V (D-S) MOSFET
N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
Infrared Emitting Diode, 950 nm, GaAs
Infrared Emitting Diode, 95 nm, CQY37N DESCRIPTION 94 8638-2 CQY37N is an infrared, 95 nm emitting diode in technology molded in a miniature, clear plastic package with lens. FEATURES Package type: leaded
Automotive P-Channel 20 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQ23ES PRODUCT SUMMARY V DS (V) - 2 R DS(on) ( ) at V GS = - 4.5 V.2 R DS(on) ( ) at V GS = - 2.5 V.8 I D (A) - 3.9 Configuration Single FEATURES Halogen-free
New Product. High Temperature Stability and High Reliability Conditions FEATURES
Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions PRIMARY CHARACTERISTICS V WM 1 V to 43 V V BR 11.1 V to 52.8 V P PPM 3 W P D 6. W I FSM 2 A T
Reflective Optical Sensor with Transistor Output
www.vishay.com TCRT, TCRT Reflective Optical Sensor with Transistor Output 2836 TCRT A C E C TCRT 955_ FEATURES Package type: leaded Detector type: phototransistor Dimensions (L x W x H in mm): 7 x 4 x
Insulated Gate Bipolar Transistor (Trench IGBT), 175 A
Insulated Gate Bipolar Transistor (Trench IGBT), 75 A VS-GT75DAU PRODUCT SUMMARY SOT-7 V CES V I C(DC) 75 A at 9 C () V CE(on) typical at A, 5 C.73 V I F(DC) 3 A at 9 C Package SOT-7 Circuit Single Switch
Insulated Precision Wirewound Resistors Axial Leads
Insulated Precision Wirewound Resistors Axial Leads In wirewound precision resistors, the series holds a leading position in professional applications whenever an excellent stability of the ohmic value
Backlighting LED in Ø 3 mm Tinted Non-Diffused Package
TLVH42., TLVS42, TLVY42, TLVG42, TLVP42. Backlighting LED in Ø 3 mm Tinted Non-Diffused Package DESCRIPTION 923 The TLV.42. series was developed for backlighting. Due to its special shape the spatial distribution
Transmissive Optical Sensor with Phototransistor Output
TCST23 Transmissive Optical Sensor with Phototransistor Output 2833 DESCRIPTION Top view The TCST23 is a transmissive sensor that includes an infrared emitter and phototransistor, located face-to-face
FEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
Standard 7-Segment SMD Display 10 mm
Standard 7-Segment SMD Display mm DESCRIPTION The VDM.A1 series are mm SMD seven segment LED displays in a very compact package. The devices utilize AlInGaP on GaAs chip technology. PRODUCT GROUP AND PACKAGE
Metal Film Resistors, Industrial, Precision
Metal Film Resistors, Industrial, Precision FEATURES Small size - conformal coated Flame retardant epoxy coating Controlled temperature coefficient Excellent high frequency characteristics Exceptionally
VJ 3505 UHF Chip Antenna for Mobile Devices
VJ 355 VJ 355 UHF Chip Antenna for Mobile Devices The company s products are covered by one or more of the following: WO2825262 (A1), US283372 (A1), US283575 (A1), WO28154173 (A1). Other patents pending.
Metal Film Resistors, Non-Magnetic, Industrial, Precision
CMF Non-Magnetic Metal Film Resistors, Non-Magnetic, Industrial, Precision STANDARD ELECTRICAL SPECIFICATIONS GLOBAL HISTORICAL MAXIMUM WORKING VOLTAGE (1) V (1) Continuous working voltage shall be P x
Power MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D