SensL B-Series Silicon Photomultipliers for TOF- PET. NDIP2014 Kevin O Neill 4 th July, 2014
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1 SensL B-Series Silicon Photomultipliers for TOF- PET NDIP2014 Kevin O Neill 4 th July,
2 Outline Performance-limiting physics of SiPM sensors Photon Detection Efficiency Dark count rate Crosstalk Afterpulsing Microcell dimension Effect of load resistances on output pulse shape Rise-time Recovery time Coincidence Resolving Time of B-Series SiPM sensors LYSO Crystal effects 2
3 Large Diversified Markets and Applications Medical Imaging PET/CT, PET/MR, SPECT Hazard and Threat Detection Radiation Detection, Cargo Scanning Automotive and Industrial Advanced Driver Assistance, Laser Range Finding, Robotic Automation Biophotonics Hematology, Flow Cytometry, DNA Analysis July 4th, 2014 NDIP2014 3
4 Positron Emission Tomography (PET) 4
5 Photon Detection Efficiency (PDE) 5V 2.5V PDE for: MicroFB SMT MicroFB SMT MicroFB SMT PDE optimized at 420nm for LYSO 5
6 Dark Count Rate (DCR) B-Series C-Series Significant reduction of DCR in C-Series 6
7 Dark Count Rate C-Series 100kHz/mm 2 VBR2=~24.5V OVB up to ~7.5V 7
8 cross-talk probability Crosstalk 0,15 0,10 0,05 0, overvoltage (V) 8
9 MicroFB-30020/30035/30050-SMT Crosstalk Comparison Larger microcell dimension higher crosstalk probability *Eckert, P.; Schultz-Coulon, H.-C.; Shen, W.; Stamen, R. & Tadday, A. Characterisation studies of silicon photomultipliers Nuclear Instruments and Methods in Physics Research A, 2010, 620,
10 Afterpulsing Probability Lifetime style experiment look at distribution of consecutive dark pulses *Eckert, P.; Schultz-Coulon, H.-C.; Shen, W.; Stamen, R. & Tadday, A. Characterisation studies of silicon photomultipliers July 4th, 2014 Nuclear Instruments and Methods in Physics Research NDIP2014 A, 2010, 620,
11 MicroFB-30020/30035/30050-SMT Afterpulsing Comparison Larger microcell dimension higher afterpulsing probability More pronounced at higher over-biases 11
12 Coincidence Resolving Time (CRT) for TOF-PET Bias SiPM sensor Head-to-head configuration LYSO xtal Na- 22 Amp 2 Amp 1 Amp 1 Amp 2 USB Wavecatcher 12-bit, 3.2Gs, 500MHz digitizer Amp 1: (optional) Minicircuits ZFL-1000 PC Amp 2: Minicircuits ZX60-43-S+ (Combined amplification of ~200x) July 4th, 2014 NDIP
13 Coincidence Resolving Time (ps) CRT Analysis Methods linear interpolation exponential interpolation exponential interpolation with time walk correction cubic spline interpolation cubic spline interpolation with time walk correction timestamp voltage (no. photoelectron) MicroFB-SMA Bias: 5V over VBR2 Fast terminal output 3x3x20mm 3 LYSO crystals 13
14 CRT (ps) Operating Current (ua) Overvoltage Impact on Coincidence Resolving Time (CRT) Bias: 5V over VBR Fast terminal output 3x3x20mm 3 LYSO crystals Microcell Dimension (µm) Trade-off between CRT performance and SiPM operating current MicroFB SMT provides best trade-off. 14
15 CRT (ps) Operating Current (ua) Microcell Size Impact on Coincidence Resolving Time (CRT) MicroFB SMT Fast terminal output 3x3x20mm 3 LYSO crystals C (expected) C (expected) Overvoltage (V) 15
16 best CRT (FWHM ps) Depth of Interaction Study (1) Head-on/Sideon Left detector: head on 511keV light collimated by xtals DOI0 DOI1 DOI2 DOI3 DOI MicroFB SMA detectors 3mmx3mmx20mm LYSO (Teflon wrapped) 5V over breakdown (VBR2) Right detector: Side on DOI4 DOI3 DOI2 DOI1 DOI0 Ref to stanford paper 16
17 Depth of Interaction Study (2) Side-side Illumination, Different Positions 511keV light collimated by xtals CRT=232±2ps 511keV light uncollimated CRT=278±2ps 511keV light collimated by xtals CRT=284±2ps 17
18 Importance of High Frequency Board Optimization V3 PCBs made for engineering trials Two layer PCB Impedance matches tracks for 50oh All components on the same side as the SiPM (no vias) V2 SMA board V3 SMA board 18
19 SiPM Microcell Recovery: Simple RC Model With Load Equivalent circuit τ = C μcell R Q + NR L Device Average S terminal recovery time MicroFB SMA 89.6ns 100ns MicroFB SMA 180ns 175ns MicroFB SMA 345ns 345ns MicroFB SMA 345ns 341ns MicroFB SMA (MOD)* 234ns 236ns Simple model recovery time R L consists of combination of 5Ω in series with 5.5Ω in series with 50Ω 50Ω 19
20 END 20
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