MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUNDWTG series, two complementary BRT devices are housed in the SOT package which is ideal for low power surface mount applications where board space is at a premium. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in mm, inch/ Unit Tape and Reel These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T A = unless otherwise noted, common for Q and Q, minus sign for Q (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage V CBO Vdc Collector-Emitter Voltage V CEO Vdc Collector Current I C madc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance Junction-to-Ambient P D (Note ) (Note ). (Note ). (Note ) R JA (Note ) (Note ) mw mw/ C C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Lead P D (Note ) (Note ). (Note ). (Note ) R JA (Note ) (Note ) R JL (Note ) (Note ) mw mw/ C C/W C/W Junction and Storage Temperature T J, T stg to + C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. FR @ Minimum Pad. FR @. x. inch Pad () Q R R () R SOT CASE B STYLE R MARKING DIAGRAM () Q () () () ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. xx M xx = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Semiconductor Components Industries, LLC, October, Rev. Publication Order Number: MUNDWT/D
MUNDWTG Series ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG Device Package Marking R (K) R (K) Shipping SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree) SOT (PbFree)......... / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD/D.
MUNDWTG Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q, minus sign for Q (PNP) omitted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (V CB = V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = V, I B = ) I CEO nadc Emitter-Base Cutoff Current MUNDWTG (V EB =. V, I C = ) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG Collector-Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO Vdc Collector-Emitter Breakdown Voltage (Note ) (I C =. ma, I B = ) V (BR)CEO Vdc. Pulse Test: Pulse Width < s, Duty Cycle <.% I EBO............ madc
MUNDWTG Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q, minus sign for Q (PNP) omitted) (Continued) ON CHARACTERISTICS (Note ) Characteristic Symbol Min Typ Max Unit DC Current Gain MUNDWTG (V CE = V, I C =. ma) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG h FE... Collector-Emitter Saturation Voltage (I C = ma, I B =. ma) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG (I C = ma, I B = ma) MUNDWTG MUNDWTG (I C = ma, I B = ma) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG V CE(sat)............ Vdc Output Voltage (on) (V CC =. V, V B =. V, R L =. k ) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG (V CC =. V, V B =. V, R L =. k ) MUNDWTG V OL............ Vdc Output Voltage (off) (V CC =. V, V B =. V, R L =. k ) MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG (V CC =. V, V B =. V, R L =. k ) MUNDWTG (V CC =. V, V B =. V, R L =. k ) MUNDWTG MUNDWTG MUNDWTG MUNDWTG V OH............ Vdc
MUNDWTG Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q, minus sign for Q (PNP) omitted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note ) Input Resistor MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG MUNDWTG R........................... k Resistor Ratio MUNDWTG/MUNDWTG/MUNDWTG MUNDWTG MUNDWTG/MUNDWTG MUNDWTG/MUNDWTG/MUNDWTG MUNDWTG MUNDWTG MUNDWTG R/R................... Pulse Test: Pulse Width < s, Duty Cycle <.% ALL MUNDWTG SERIES DEVICES P D, POWER DISSIPATION (mw) R JA = C/W T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = Figure. V CE(sat) versus I C T A = - f = MHz I E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = - V CE = V T A = - V O = V Figure. Output Capacitance. Figure. Output Current versus Input Voltage V O =. V T A = - Vin, INPUT VOLTAGE (VOLTS). Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf).. I C /I B = T A = - Figure. V CE(sat) versus I C f = MHz l E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = - V O = V V CE = V T A = -. Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)... I C /I B = T A = - Figure. V CE(sat) versus I C f = MHz I E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED)... Figure. DC Current Gain V CE = V T A = - T A = - V O = V Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf).. I C /I B = T A = - Figure. V CE(sat) versus I C f = MHz l E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED) V CE = V T A = - Figure. DC Current Gain T A = -.. V O = V Figure. Output Capacitance. Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)..... I C /I B = T A = -. Figure. V CE(sat) versus I C f = MHz I E = V T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = - V O = V V CE = V T A = -. Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)...... I C /I B = Figure. V CE(sat) versus I C IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN (NORMALIZED) T A = - f = MHz l E = V T A =.. Figure. DC Current Gain V O = V T A = T A = - -. Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS).. I C /I B = T A = - hfe, DC CURRENT GAIN (NORMALIZED) V CE = T A = -. Figure. V CE(sat) versus I C Figure. DC Current Gain Cob, CAPACITANCE (pf).... f = MHz l E = V T A = IC, COLLECTOR CURRENT (ma) T A = - V O = V Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V T A = - Vin, INPUT VOLTAGE (VOLTS). Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR VCE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = T A = - hfe, DC CURRENT GAIN (NORMALIZED) V CE = V T A = - Figure. V CE(sat) versus I C Figure. DC Current Gain Cob, CAPACITANCE (pf)..... f = MHz l E = V T A = IC, COLLECTOR CURRENT (ma) T A = - V O = V Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A = -. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain.. T A = V O = V T A = V O =. V.. Figure. Output Current versus Input Voltage Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR I C /I B =... T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain.... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = V CE = V T A = Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A = Figure. Output Capacitance... T A = Figure. Output Current versus Input Voltage V O = V T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain.... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR.. I C /I B = (NORMALIZED) T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain...... f = MHz I E = V T A = T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG NPN TRANSISTOR.. T A = I C /I B = (NORMALIZED) T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain....... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V T A = Figure. Input Voltage versus Output Current
MUNDWTG Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWTG PNP TRANSISTOR... I C /I B = T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current
MUNDWTG Series PACKAGE DIMENSIONS H E D e A E b PL. (.) M E M A SC/SC/SOT CASE B ISSUE W A L C NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M,.. CONTROLLING DIMENSION: INCH.. B OBSOLETE, NEW STANDARD B. MILLIMETERS DIM MIN NOM MAX A... A... A b... C... D... E... e. BSC L... H E... STYLE : PIN. EMITTER. BASE. COLLECTOR. EMITTER. BASE. COLLECTOR INCHES MIN NOM MAX....... REF. REF......... SOLDERING FOOTPRINT*...... BSC.............. SCALE : SC/SC/SOT mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MUNDWT/D