MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

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Transcription:

MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUNDWT series, two BRT devices are housed in the SOT package which is ideal for low power surface mount applications where board space is at a premium. () () R R Q R R () Q Features Simplifies Circuit Design Reduces Board Space Reduces Component Count PbFree Packages are Available MAXIMUM RATINGS (T A = unless otherwise noted, common for Q and Q ) Rating Symbol Value Unit Collector-Base Voltage V CBO Vdc Collector-Emitter Voltage V CEO Vdc Collector Current I C madc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance, Junction-to-Ambient P D 87 (Note ) (Note ). (Note ). (Note ) R JA 7 (Note ) 9 (Note ) mw mw/ C C/W Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = Derate above Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead P D (Note ) 8 (Note ). (Note ). (Note ) R JA 9 (Note ) (Note ) R JL 88 (Note ) 8 (Note ) mw mw/ C C/W C/W Junction and Storage Temperature T J, T stg to + C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. FR @ Minimum Pad. FR @. x. inch Pad () () () SOT CASE 9B STYLE DEVICE MARKING INFORMATION See specific marking information in the device marking table on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. MARKING DIAGRAM xx M xx = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. Semiconductor Components Industries, LLC, December, Rev. 7 Publication Order Number: MUNDWT/D

MUNDWT Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R (K) R (K) Shipping MUNDWT SOT 7A /Tape & Reel MUNDWTG SOT (PbFree) 7A /Tape & Reel MUNDWT SOT 7B /Tape & Reel MUNDWTG SOT (PbFree) 7B /Tape & Reel MUNDWT SOT 7C 7 7 /Tape & Reel MUNDWTG SOT (PbFree) 7C 7 7 /Tape & Reel MUNDWT SOT 7D 7 /Tape & Reel MUNDWTG SOT (PbFree) 7D 7 /Tape & Reel MUNDWT SOT 7E /Tape & Reel MUNDWTG SOT (PbFree) 7E /Tape & Reel MUNDWT SOT 7F.7 /Tape & Reel MUNDWTG SOT (PbFree) 7F.7 /Tape & Reel MUNDWT SOT 7G.. /Tape & Reel MUNDWTG SOT (PbFree) 7G.. /Tape & Reel MUNDWT SOT 7H.. /Tape & Reel MUNDWTG SOT (PbFree) 7H.. /Tape & Reel MUNDWT SOT 7J.7.7 /Tape & Reel MUNDWTG SOT (PbFree) 7J.7.7 /Tape & Reel MUNDWT SOT 7K.7 7 /Tape & Reel MUNDWTG SOT (PbFree) 7K.7 7 /Tape & Reel MUNDWT SOT 7L 7 /Tape & Reel MUNDWTG SOT (PbFree) 7L 7 /Tape & Reel MUNDWT SOT 7M. 7 /Tape & Reel MUNDWTG SOT (PbFree) 7M. 7 /Tape & Reel MUNDWT SOT 7N /Tape & Reel MUNDWTG SOT (PbFree) 7N /Tape & Reel MUN7DWT SOT 7P 7 /Tape & Reel MUN7DWTG SOT (PbFree) 7P 7 /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D.

MUNDWT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = V, I E = ) I CBO nadc Collector-Emitter Cutoff Current (V CE = V, I B = ) I CEO nadc Emitter-Base Cutoff Current MUNDWT, G I EBO. madc (V EB =. V, I C = ) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUN7DWT, G....9.9....8.... Collector-Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO Vdc Collector-Emitter Breakdown Voltage (Note ) (I C =. ma, I B = ) V (BR)CEO Vdc. Pulse Test: Pulse Width < s, Duty Cycle <.% ON CHARACTERISTICS (Note ) DC Current Gain MUNDWT, G (V CE = V, I C =. ma) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUN7DWT, G h FE 8 8. 8. 8 8 8 8 8.

MUNDWT Series Collector-Emitter Saturation Voltage (I C = ma, I B =. ma) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G (I C = ma, I B = ma) MUNDWT, G MUNDWT, G MUN7DWT, G (I C = ma, I B = ma) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G Output Voltage (on) (V CC =. V, V B =. V, R L =. k ) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G (V CC =. V, V B =. V, R L =. k ) MUNDWT, G (V CC =. V, V B =. V, R L =. k ) MUNDWT, G (V CC =. V, V B =. V, R L =. k ) MUN7DWT, G. Pulse Test: Pulse Width < s, Duty Cycle <.% V CE(sat).............. Vdc V OL.............. Vdc

MUNDWT Series ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted, common for Q and Q ) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note ) (Continued) Output Voltage (off) (V CC =. V, V B =. V, R L =. k ) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G (V CC =. V, V B =. V, R L =. k ) MUNDWT, G (V CC =. V, V B =. V, R L =. k ) MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUN7DWT, G V OH.9.9.9.9.9.9.9.9.9.9.9.9.9.9 Vdc Input Resistor MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUN7DWT, G R 7...9 7. 7...7..... 7.9 7.7...7.7. 7 8.....9.. 8..8. k Resistor Ratio MUNDWT, G/MUNDWT, G/ MUNDWT, G/MUNDWT, G MUNDWT, G MUNDWT, G/MUNDWT, G MUNDWT, G/MUNDWT, G/MUNDWT, G MUNDWT, G MUNDWT, G MUNDWT, G MUN7DWT, G R/R.8.7.8..8.8.7.....7.7.....8.... Pulse Test: Pulse Width < s, Duty Cycle <.% ALL MUNDWT SERIES DEVICES P D, POWER DISSIPATION (mw) R JA = 8 C/W T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT VCE(sat), COLLECTOR VOLTAGE (VOLTS).. I C /I B = T A = h FE, DC CURRENT GAIN (NORMALIZED) V CE = V T A =. Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V Figure. Output Capacitance. 7 8 9 Figure. Output Current versus Input Voltage V O =. V T A = Vin, INPUT VOLTAGE (VOLTS). Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)... I C /I B = T A = Figure 7. V CE(sat) versus I C f = MHz I E = V T A = h FE, DC CURRENT GAIN (NORMALIZED)... Figure 8. DC Current Gain V CE = V T A = T A = V O = V 8 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. Figure. Input Voltage versus Output Current 7

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT VCE(sat), COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)..8... I C /I B = T A = Figure. V CE(sat) versus I C. f = MHz I E = V T A = h FE, DC CURRENT GAIN (NORMALIZED).. Figure. DC Current Gain T A = V O = V V CE = V T A =. 8 Figure. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. Figure. Input Voltage versus Output Current 8

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT VCE(sat), COLLECTOR VOLTAGE (VOLTS).. I C /I B = T A = h FE, DC CURRENT GAIN (NORMALIZED) V CE = T A =. 8 8 7 8 9 Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain Cob, CAPACITANCE (pf).... f = MHz l E = V T A = T A = V O = V 8 Figure 9. Output Capacitance 8 Figure. Output Current versus Input Voltage V O =. V T A = Vin, INPUT VOLTAGE (VOLTS). Figure. Input Voltage versus Output Current 9

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain.... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain TBD TBD Figure. Output Capacitance Figure. Output Current versus Input Voltage TBD Figure. Input Voltage versus Output Current

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current 7

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUNDWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure. V CE(sat) versus I C Figure. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure. Output Capacitance Figure. Output Current versus Input Voltage T A = V O =. V. Figure. Input Voltage versus Output Current 8

MUNDWT Series TYPICAL ELECTRICAL CHARACTERISTICS MUN7DWT V CE(sat), COLLECTOR VOLTAGE (VOLTS)... I C /I B = h FE, DC CURRENT GAIN T A = V CE = V Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain..... f = MHz I E = V T A =.. T A = V O = V. 7 8 9 Figure 9. Output Capacitance Figure 7. Output Current versus Input Voltage T A = V O =. V. Figure 7. Input Voltage versus Output Current 9

MUNDWT Series PACKAGE DIMENSIONS SC88 (SOT) CASE 9B ISSUE V D e NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. 9B OBSOLETE, NEW STANDARD 9B. H E E b PL. (.8) M E M A A C MILLIMETERS DIM MIN NOM MAX A.8.9. A... A b... C... D.8.. E... e. BSC L... H E... STYLE : PIN. EMITTER. BASE. COLLECTOR. EMITTER. BASE. COLLECTOR INCHES MIN NOM MAX..7..... REF.8 REF..8.....7.78.8..9.. BSC..8..78.8.8 A L SOLDERING FOOTPRINT*..97....7...9.78 SCALE : mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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