UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMCNT series, two complementary BRT devices are housed in the SOT353 package which is ideal for low power surface mount applications where board space is at a premium. Features Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3 Unit Tape and Reel PbFree Packages are Available MAXIMUM RATINGS (T A = unless otherwise noted, common for Q and Q, minus sign for Q (PNP) omitted) Rating Symbol Value Unit Collector Base Voltage V CBO 5 Vdc Collector Emitter Voltage V CEO 5 Vdc Collector Current I C madc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Thermal Resistance Junction to Ambient (surface mounted) R JA 833 C/W Q 3 R R SC88A/SOT353 CASE 9A STYLE 6 R R Q 5 MARKING DIAGRAM 5 Ux M 3 Ux = Device Marking x =, 3 or 5 M = Date Code = PbFree Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Operating and Storage Temperature Range T J, T stg 65 to +5 C Total Package Dissipation @ T A = (Note ) P D *5 mw. Device mounted on a FR glass epoxy printed circuit board using the minimum recommended footprint. Semiconductor Components Industries, LLC, 7 November, 7 Rev. 7 Publication Order Number: UMCNT/D
UMCNT, UMC3NT, UMC5NT ELECTRICAL CHARACTERISTICS (T A = unless otherwise noted) Characteristic Symbol Min Typ Max Unit Q TRANSISTOR: PNP OFF CHARACTERISTICS Collector Base Cutoff Current (V CB = 5 V, I E = ) I CBO nadc Collector Emitter Cutoff Current (V CB = 5 V, I B = ) I CEO 5 nadc Emitter Base Cutoff Current UMCNT, G I EBO. madc (V EB = 6., I C = ma) UMC3NT, G UMC5NT, G / T, G.5. ON CHARACTERISTICS Collector Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO 5 Vdc Collector Emitter Breakdown Voltage (I C =. ma, I B = ) V (BR)CEO 5 Vdc DC Current Gain UMCNT, G (V CE = V, I C = 5. ma) UMC3NT, G UMC5NT, G / T, G h FE 6 35 CollectorEmitter Saturation Voltage (I C = ma, I B =.3 ma) V CE(SAT).5 Vdc Output Voltage (on) (V CC = 5. V, V B =.5 V, R L =. k ) V OL. Vdc Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k ) V OH.9 Vdc Input Resistor Resistor Ratio Q TRANSISTOR: NPN OFF CHARACTERISTICS UMCNT, G UMC3NT, G UMC5NT, G / T, G UMCNT, G UMC3NT, G UMC5NT, G / T, G R 5. 7. 3.3 R/R.8.8.38 Collector Base Cutoff Current (V CB = 5 V, I E = ) I CBO nadc Collector Emitter Cutoff Current (V CB = 5 V, I B = ) I CEO 5 nadc Emitter Base Cutoff Current UMCNT, G (V EB = 6., I C = ma) UMC3NT, G UMC5NT, G / T, G ON CHARACTERISTICS I EBO Collector Base Breakdown Voltage (I C = A, I E = ) V (BR)CBO 5 Vdc Collector Emitter Breakdown Voltage (I C =. ma, I B = ) V (BR)CEO 5 Vdc DC Current Gain UMCNT, G (V CE = V, I C = 5. ma) UMC3NT, G UMC5NT, G / T, G h FE 6 35 8 CollectorEmitter Saturation Voltage (I C = ma, I B =.3 ma) V CE(SAT).5 Vdc Output Voltage (on) (V CC = 5. V, V B =.5 V, R L =. k ) V OL. Vdc Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. k ) V OH.9 Vdc Input Resistor Resistor Ratio UMCNT, G UMC3NT, G UMC5NT, G / T, G UMCNT, G UMC3NT, G UMC5NT, G / T, G R 5. 7. 33 R/R.8.8.8 6 35.7...7 6 7... 8.6 3 6....56..5. 8.6 3 6... k madc k
UMCNT, UMC3NT, UMC5NT ORDERING INFORMATION Device Package Shipping UMCNT SC88A/SOT353 3 / Tape & Reel UMCNTG SC88A/SOT353 (PbFree) 3 / Tape & Reel UMC3NT SC88A/SOT353 3 / Tape & Reel UMC3NTG SC88A/SOT353 (PbFree) 3 / Tape & Reel UMC3NT SC88A/SOT353 3 / Tape & Reel UMC3NTG SC88A/SOT353 (PbFree) 3 / Tape & Reel UMC5NT SC88A/SOT353 3 / Tape & Reel UMC5NTG SC88A/SOT353 (PbFree) 3 / Tape & Reel UMC5NT SC88A/SOT353 3 / Tape & Reel UMC5NTG SC88A/SOT353 (PbFree) 3 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. DEVICE MARKING AND RESISTOR VALUES Transistor PNP Transistor NPN Device Marking R (K) R (K) R (K) R (K) UMCNT, G UMC3NT, G UMC3NT, G UMC5NT, G UMC5NT, G U U3 U3 U5 U5.7.7 7 7 7 7 PD, POWER DISSIPATION (MILLIWATTS) 5 5 5 R JA = 833 C/W 5 5 5 T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve 3
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMCNT PNP TRANSISTOR VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf).. 5 3 I C /I B = T A = Figure. V CE(sat) versus I C 3 f = MHz l E = ma T A = 5 IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN V CE = V T A = Figure 3. DC Current Gain T A =... 3 V O = 5 V 5 6 7 8 9 Figure. Output Capacitance Figure 5. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. 3 5 Figure 6. Input Voltage versus Output Current
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMCNT NPN TRANSISTOR VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) C ob, CAPACITANCE (pf)... 5 3 I C /I B = Figure 7. V CE(sat) versus I C T A = f = MHz I E = ma T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN.. Figure 8. DC Current Gain T A = V CE = V T A = V O = 5 V 3 Figure 9. Output Capacitance 5. 3 5 6 7 8 9 Figure. Output Current versus Input Voltage V O =. V T A = Vin, INPUT VOLTAGE (VOLTS). 3 5 Figure. Input Voltage versus Output Current 5
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMC3NT PNP TRANSISTOR VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) I C /I B = T A =.. 5 hfe, DC CURRENT GAIN V CE = V T A = Figure. V CE(sat) versus I C Figure 3. DC Current Gain Cob, CAPACITANCE (pf) 3 f = MHz l E = ma T A = IC, COLLECTOR CURRENT (ma).. T A = V O = 5 V 3 5. 3 5 6 7 8 9 Figure. Output Capacitance Figure 5. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. 3 5 Figure 6. Input Voltage versus Output Current 6
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMC3NT NPN TRANSISTOR VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)... 5 3 I C /I B = T A = Figure 7. V CE(sat) versus I C 3 f = MHz I E = ma T A = 5 IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN... Figure 8. DC Current Gain V CE = V T A = T A = V O = 5 V 6 8 Figure 9. Output Capacitance Figure. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. 3 5 Figure. Input Voltage versus Output Current 7
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMC5NT PNP TRANSISTOR VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf). Figure. V CE(sat) versus I C. 3 5 6 8 6 I C /I B = SERIES T A = f = MHz I E = ma T A = IC, COLLECTOR CURRENT (ma) hfe, DC CURRENT GAIN. V CE = V T A = T A = Figure 3. DC Current Gain V O = 5 V 5 5 5 3 35 5. 6 8 Figure. Output Capacitance Figure 5. Output Current versus Input Voltage 8
UMCNT, UMC3NT, UMC5NT TYPICAL ELECTRICAL CHARACTERISTICS UMC5NT NPN TRANSISTOR V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Cob, CAPACITANCE (pf)..8.6.. I C /I B = T A = Figure 6. V CE(sat) versus I C 3. 5 f = MHz I E = ma T A = 5 IC, COLLECTOR CURRENT (ma) h FE, DC CURRENT GAIN.. Figure 7. DC Current Gain T A = V O = 5 V V CE = V T A =. 6 8 Figure 8. Output Capacitance Figure 9. Output Current versus Input Voltage V O =. V Vin, INPUT VOLTAGE (VOLTS) T A =. 3 5 Figure 3. Input Voltage versus Output Current 9
UMCNT, UMC3NT, UMC5NT PACKAGE DIMENSIONS SC88A, SOT353, SC7 CASE 9A ISSUE J S A G 5 B 3 D 5 PL. (.8) M B M N NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH. 3. 9A OBSOLETE. NEW STANDARD 9A.. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.7.87.8. B.5.53.5.35 C.3.3.8. D....3 G.6 BSC.65 BSC H.. J....5 K....3 N.8 REF. REF S.79.87.. C J STYLE 6: PIN. EMITTER. BASE 3. EMITTER. COLLECTOR 5. COLLECTOR /BASE H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 87 USA Phone: 3367575 or 83386 Toll Free USA/Canada Fax: 3367576 or 833867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 889855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 33 79 9 Japan Customer Focus Center Phone: 835773385 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative UMCNT/D