SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ( Suffix) Lead Formed Version in 6 mm Tape and Reel ( T4 Suffix) Electrically Similar to Popular TIP47, and TIP0 0 and 400 V (Min) VCEO(sus) A Rated Collector Current ÎÎÎ MAXIMUM RATINGS Rating Symbol MJD47 MJD0 ÎÎÎ Unit Collector Emitter Voltage VCEO 0 400 ÎÎÎ Vdc Collector Base Voltage VCB 30 00 ÎÎÎ Vdc Emitter Base Voltage VEB ÎÎÎ ÎÎÎ Vdc Collector Current Continuous IC ÎÎÎ ÎÎÎ Î Peak ÎÎÎ Adc Base Current ÎÎÎ IB 0.6 Î Adc Total Power Dissipation @ TC = C PD Watts Î Derate above C 0. ÎÎÎ W/ C Total Power Dissipation* @ TA = C ÎÎÎ ÎÎÎ PD.6 Watts Î Derate above C W/ C Operating and Storage Junction ÎÎÎ ÎÎÎ TJ, Tstg 6 to +0 ÎÎÎ Î C ÎÎÎ Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol ÎÎÎ Max ÎÎÎ Unit Thermal Resistance, Junction to Case RθJC ÎÎÎ 8.33 ÎÎÎ C/W Thermal Resistance, Junction to Ambient* RθJA ÎÎÎ 80 ÎÎÎ C/W Lead Temperature for Soldering Purpose TL ÎÎÎ 60 ÎÎÎ C ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = C unless otherwise noted) Characteristic SymbolÎÎ Min ÎÎÎ MaxÎÎÎ Unit OFF CHARACTERISTICS Î Collector Emitter Sustaining Voltage () MJD47 Î (IC = 30 madc, IB = 0) MJD0 VCEO(sus) 0 ÎÎ 400 ÎÎÎ Vdc Î Collector Cutoff Current Î (VCE = 0 Vdc, IB = 0) MJD47 ÎÎÎ ÎÎÎ ICEO madc ÎÎÎ ÎÎÎ (VCE = 300 Vdc, IB = 0) MJD0 * When surface mounted on minimum pad sizes recommended. (continued) () Pulse Test: Pulse Width 300 µs, Duty Cycle %. *Motorola Preferred Device NPN SILICON POWER TRANSISTORS AMPERE 0, 400 VOLTS WATTS CASE 369A 3 CASE 369 07 MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS 0.90 4.86 43 6.7 0.063.6 0.07.8 0.6 4.9 0.8 3.0 inches mm Preferred devices are Motorola recommended choices for future use and best overall value. REV Motorola, Inc. 99 Motorola Bipolar Power Transistor Device Data
ÎÎ ELECTRICAL CHARACTERISTICS continued (TC = C unless otherwise noted) ÎÎ Characteristic Symbol Min Max Unit ÎÎ OFF CHARACTERISTICS continued ÎÎ Collector Cutoff Current ICES madc ÎÎÎ (VCE = 30 Vdc, VBE = 0) MJD47 ÎÎ 0. ÎÎÎ (VCE = 00 Vdc, VBE = 0) MJD0 ÎÎ ÎÎÎ 0. Emitter Cutoff Current IEBO Î ÎÎÎ madc ÎÎ ÎÎ (VBE = Vdc, IC = 0) ON CHARACTERISTICS () DC Current Gain ÎÎ hfe ÎÎ ÎÎÎ (IC = 0.3 Adc, VCE = 0 Vdc) 30 0 (IC = Adc, VCE = 0 Vdc) 0 ÎÎÎ ÎÎÎ Collector Emitter Saturation Voltage VCE(sat) ÎÎÎ Vdc ÎÎ ÎÎÎ (IC = Adc, IB = Adc) Base Emitter On Voltage VBE(on). ÎÎÎ Vdc ÎÎ (IC = Adc, VCE = 0 Vdc) DYNAMIC CHARACTERISTICS ÎÎ Current Gain Bandwidth Product ÎÎ ft 0 MHz ÎÎ ÎÎÎ (IC = Adc, VCE = 0 Vdc, f = MHz) ÎÎ Small Signal Current Gain hfe ÎÎ (IC = Adc, VCE = 0 Vdc, f = khz) () Pulse Test: Pulse Width 300 µs, Duty Cycle %. TYPICAL CHARACTERISTICS PD, POWER DISSIPATION (WATTS) TA.. 0 TC 0 0 0 TA (SURFACE MOUNT) TC 0 7 00 0 T, TEMPERATURE ( C) TURN ON PULSE APPROX + V VEB(off) Vin 0 APPROX + V Vin t t3 t TURN OFF PULSE VCC Vin t 7 ns 0 < t < 00 µs t3 < ns RB Cjd << Ceb RC DUTY CYCLE % APPROX 9 V 4 V SCOPE RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. Figure. Power Derating Figure. Switching Time Equivalent Circuit Motorola Bipolar Power Transistor Device Data
hfe, DC CURRENT GAIN 00 00 60 40 0 0 6 4 TJ = 0 C C C VCE = 0 V V, VOLTAGE (VOLTS).4. 0.8 0.6 0.4 VBE(sat) @ IC/IB = V VBE(on) @ VCE = 4 V TJ = C VCE(sat) @ IC/IB = V 0.04 0.06 0. 0.4 0.6 0 0.04 0.06 0. 0.4 0.6 Figure 3. DC Current Gain Figure 4. On Voltages 0.7 D = r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.3 0. 0.07 0.0 0.03 0. 0.0 0.0 SINGLE PULSE RθJC(t) = r(t) RθJC RθJC = 8.33 C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) θjc(t) P(pk) t t DUTY CYCLE, D = t/t 0.0 0.0 0.03 0.0 0. 0.3 3 0 0 30 0 00 00 300 00 t, TIME (ms) Figure. Thermal Response k IC, COLLECTOR CURRENT (AMP) 0. 0.0 0.0 0.00 TC C 0 ms dc SECOND BREAKDOWN LIMIT THERMAL LIMIT @ C WIRE BOND LIMIT CURVES APPLY BELOW RATED VCEO 00 µs MJD47 MJD0 00 µs 0 0 00 00 300 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 00 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 6 is based on TJ(pk) = 0 C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 0% provided TJ(pk) 0 C. TJ(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 6. Active Region Safe Operating Area Motorola Bipolar Power Transistor Device Data 3
TJ = C VCC = 00 V IC/IB = ts t, TIME ( µ s) 0. 0.0 tr td t, TIME ( µ s) tf TJ = C VCC = 00 V IC/IB = 0. 0.0 0.0 0. Figure 7. Turn On Time 0.0 0.0 0. Figure 8. Turn-Off Time 4 Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS V S F B R 4 3 G L A K D PL J H C 0.3 (0.00) M T T E SEATING PLANE U Z NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A 3 0.97 6.3 B 0 6 6.3 6.73 C 0.086 0.094.9.38 D 7 0.03 0.69 0.88 E 0.033 0.040 0.84.0 F 0.037 0.047 0.94.9 G 0.80 BSC 4.8 BSC H 0.034 0.040 0.87.0 J 0.08 3 0.46 8 K 0.4.60.89 L 0.090 BSC.9 BSC R 0.7 4.4.46 S 0 0.00.7 U 0 V 0.030 0.00 0.77.7 Z 0.38 3. STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 369A 3 ISSUE W V B R C E NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH. T SEATING PLANE S F 4 3 G A K D 3 PL 0.3 (0.00) M T J H INCHES MILLIMETERS DIM MIN MAX MIN MAX A 3 0.97 6.3 B 0 6 6.3 6.73 C 0.086 0.094.9.38 D 7 0.03 0.69 0.88 E 0.033 0.040 0.84.0 F 0.037 0.047 0.94.9 G 0.090 BSC.9 BSC H 0.034 0.040 0.87.0 J 0.08 3 0.46 8 K 0.30 0.380 8.89 9.6 R 0.7 4.4.46 S 0.00 0.090.7.8 V 0.030 0.00 0.77.7 STYLE : PIN. BASE. COLLECTOR 3. EMITTER 4. COLLECTOR CASE 369 07 ISSUE K Motorola Bipolar Power Transistor Device Data
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