SPS2L4 Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified ECOPACK2 halogen-free component ( and ) Description Single chip Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMB, low profile SMB and low profile SMA, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. able 1. K A SPS2L4AF K Device summary I F(AV) 2 A V RRM 4 V j (max) 15 C V F (max).34 V A SMB SPS2L4U K A SPS2L4UF September 28 Rev 4 1/1 www.st.com 1
Characteristics SPS2L4 1 Characteristics able 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V SMB L = 13 C δ =.5 I F(AV) Average forward current L = 14 C δ =.5 2 A L = 13 C δ =.5 I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 75 A P ARM Repetitive peak avalanche power t p = 1 µs j = 25 C 22 W stg Storage temperature range -65 to + 15 C j Operating junction temperature (1) 15 C 1. dptot --------------- 1 condition to avoid thermal runaway for a diode on its own heatsink dj Rth ( j a) able 3. hermal resistances Symbol Parameter Value Unit SMB 2 R th (j-l) Junction to lead 1 C/W 2 able 4. Static electrical characteristics Symbol ests conditions Min. yp. Max. Unit I R (1) V F (1) Reverse leakage current Forward voltage drop j = 25 C 22 µa j = 1 C V R = 4 V 2 ma j = 125 C 38 8 ma j = 25 C.39 I F = 1 A j = 125 C 5 8 j = 25 C 3 I F = 2 A j = 125 C.31.34 V j = 25 C.5 I F = 4 A j = 125 C.39 5 V 1. Pulse test: t p = 38 µs, δ < 2 o evaluate the conduction losses use the following equation: P = 2 x I F(AV) + 6 I F 2 (RMS) 2/1
SPS2L4 Characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (δ =.5) SMB P (W) F(AV) 1.2 δ = 5 δ =.1 δ = δ =.5 δ = 1 I F(AV) (A) δ=tp/ tp 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 2.2 2. 1.8 1.6 1.4 1.2 I F(AV) (A) δ=tp/ tp R th(j-a) =1 C/W R =Rth(j-l) th(j-a) SMB amb( C) 25 5 75 1 125 15 Figure 3. 2.2 2. 1.8 1.6 1.4 1.2 I F(AV) (A) Figure 5. 12 11 1 9 8 7 6 5 4 3 2 1 δ=tp/ Average forward current versus ambient temperature (δ =.5) tp R th(j-a) =1 C/W R th(j-a) =Rth(j-l) amb( C) 25 5 75 1 125 15 I (A) M IM t δ=.5 Non repetitive surge peak forward current versus overload duration (maximum values) SMB t(s) 1.E-3 1.E-2 1.E-1 1.E+ SMB a=25 C a=75 C a=125 C Figure 4. I F(AV) (A) 2.2 2. 1.8 1.6 1.4 1.2 Figure 6. 3 25 2 15 1 5 δ=tp/ Average forward current versus ambient temperature (δ =.5) tp R th(j-a) =2 C/W amb( C) R th(j-a) =R th(j-l) 25 5 75 1 125 15 I (A) M IM t δ=.5 Non repetitive surge peak forward current versus overload duration (maximum values) t(s) L=25 C L=75 C L=125 C 1.E-3 1.E-2 1.E-1 1.E+ 3/1
Characteristics SPS2L4 Figure 7. 8 7 6 I (A) M Non repetitive surge peak forward current versus overload duration (maximum values) Figure 8. 1 P ARM(t p) P ARM(1µs) Normalized avalanche power derating versus pulse duration 5 4 3 2 a=25 C a =75 C a =125 C.1 1 1 IM t δ =.5 t(s) 1 1.E-3 1.E-2 1.E-1 1.E+ 1.1 1 t p(µs) 1 1 1 Figure 9. Normalized avalanche power derating versus junction temperature Figure 1. Relative variation of thermal impedance junction to ambient versus pulse duration - SMB 1.2 P ARM() j P ARM(25 C).9 Z th(j-a) /Rth(j-a) SMB 1.7 ( C) j 25 5 75 1 125 15.5.3.1 Single pulse t (s) p δ=tp/ 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 tp Figure 11..9.7.5.3.1 Z th(j-l) /Rth(j-l) Single pulse Relative variation of thermal impedance junction to lead versus pulse duration - t (s) p δ=tp/ 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 tp Figure 12..9.7.5.3.1 Z th(j-a) /Rth(j-a) Single pulse Relative variation of thermal impedance junction to ambient versus pulse duration - t (s) p 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 4/1
SPS2L4 Characteristics Figure 13. 1.E+2 1.E+1 I (ma) R Reverse leakage current versus reverse voltage applied (typical values) j=125 C Figure 14. 1 C(pF) Junction capacitance versus reverse voltage applied (typical values) F=1MHz V OSC=3mVRMS j=25 C 1.E+ 1.E-1 1 1.E-2 j =25 C 1.E-3 V (V) R 5 1 15 2 25 3 35 4 1 V (V) R 1 1 1 Figure 15. Forward voltage drop versus forward current (high level) Figure 16. Forward voltage drop versus forward current (low level) 1 I FM(A) 3. I FM(A) j=125 C (typical values) 2.5 j=125 C (typical values) j=125 C (maxmimum values) j=25 C (maximum values) 2. 1.5 j=125 C (maxmimum values) j=25 C (maximum values) FM.1.1.3.5.7 V (V).5 V FM(V).1.3.5 Figure 17. 11 1 9 8 7 6 5 4 3 2 1 R th(j-a) ( C/W) hermal resistance junction to ambient versus copper surface under each lead, SMB, (epoxy printed board FR4, copper thickness = 35 µm) SMB S CU(cm²).5 1.5 2. 2.5 3. 3.5 4. 4.5 5. Figure 18. R th(j-a) ( C/W) 2 18 16 14 12 1 8 6 4 2 hermal resistance junction to ambient versus copper surface under each lead, (epoxy printed board FR4, copper thickness = 35 µm) S CU(cm²).5 1.5 2. 2.5 3. 3.5 4. 4.5 5. 5/1
Package Information SPS2L4 2 Package Information Epoxy meets UL94,V In order to meet environmental requirements, S offers these devices in ECOPACK packages. hese packages have a lead-free second level interconnect. he category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. he maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an S trademark. ECOPACK specifications are available at www.st.com. able 5. SMB dimensions Dimensions E1 Ref. Millimeters Inches Min. Max. Min. Max. D A1 1.9 2.45 75 96 A2 5 2 8 b 1.95 2.2 77 87 E c.15 6 16 A1 E 5.1 5.6 1 2 C A2 E1 4.5 4.6.159.181 L b D 3.3 3.95.13.156 L.75 1.5 3 59 Figure 19. SMB footprint dimensions in millimeters (inches) Figure 2. Marking information 1.62 2.6 (64) (.12) 1.62 (64) Cathode bar (unidirectional devices only ) 5.84 (.3) 2.18 (86) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week 6/1
SPS2L4 Package Information able 6. dimensions Dimensions Ref. Millimeters Inches E E1 D b A L L c L2 L1 Min. yp. Max. Min. yp. Max. A.9 1.1 35 43 b (1) 1.95 2.2 77 87 c (1).15 6 16 D 3.3 3.95.13.156 E 5.1 5.6 2 E1 4.5 4.6.189.181 L.75 1.5 29 59 L1 16 L2 24 1. Applies to plated leads Figure 21. footprint dimensions optimized for (1) Figure 22. Marking information 5.84 (3) Cathode bar (unidirectional devices only ) 1.2 (47) 3.44 (.136) 1.2 (47) 2.7 (82) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week millimeters (inches) 1. SMB footprint may also be used. 7/1
Package Information SPS2L4 able 7. dimensions Dimensions Ref. Millimeters Inches D A c Min. yp. Max. Min. yp. Max. A.9 1.1 35 43 L 2x L1 2x b 1.25 1.65 49 65 c.15 6 16 E E1 D 2.25 2.95 88.116 b L L2 2x E 4.8 5.6.189 2 E1 3.95 4.6.156.181 L.75 1.5 3 59 L1.5 19 L2.5 19 Figure 23. footprint dimensions optimized for (1) Figure 24. Marking information 5.52 (17) Cathode bar (unidirectional devices only ) 1.2 (47) 3.12 (.123) millimeters (inches) 1.2 (47) 1.52 (6) e3 x x x z y w w e3: ECOPACK (Leadfree) XXX: Marking Z: Manufacturing location Y: Year WW: week 1. SMA footprint may also be used. 8/1
SPS2L4 Ordering Information 3 Ordering Information able 8. Ordering information Order code Marking Package Weight Base qty Delivery mode SPS2L4U GD4 SMB.17 g 25 ape and reel SPS2L4UF FGD4.5 g 5 ape and reel SPS2L4AF F2L4.35 g 1 ape and reel 4 Revision history able 9. Document revision history Date Revision Description of changes Jul-23 2A Last update. 31-Jan-27 3 18-Sep-28 4 Reformatted to current standard. Added ECOPACK statement. Added package. Reformatted to current standard. Updated ECOPACK statement. Added package. 9/1
SPS2L4 Please Read Carefully: Information in this document is provided solely in connection with S products. SMicroelectronics NV and its subsidiaries ( S ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All S products are sold pursuant to S s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the S products and services described herein, and S assumes no liability whatsoever relating to the choice, selection or use of the S products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by S for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OHERWISE SE FORH IN S S ERMS AND CONDIIONS OF SALE S DISCLAIMS ANY EXPRESS OR IMPLIED WARRANY WIH RESPEC O HE USE AND/OR SALE OF S PRODUCS INCLUDING WIHOU LIMIAION IMPLIED WARRANIES OF MERCHANABILIY, FINESS FOR A PARICULAR PURPOSE (AND HEIR EQUIVALENS UNDER HE LAWS OF ANY JURISDICION), OR INFRINGEMEN OF ANY PAEN, COPYRIGH OR OHER INELLECUAL PROPERY RIGH. UNLESS EXPRESSLY APPROVED IN WRIING BY AN AUHORIZED S REPRESENAIVE, S PRODUCS ARE NO RECOMMENDED, AUHORIZED OR WARRANED FOR USE IN MILIARY, AIR CRAF, SPACE, LIFE SAVING, OR LIFE SUSAINING APPLICAIONS, NOR IN PRODUCS OR SYSEMS WHERE FAILURE OR MALFUNCION MAY RESUL IN PERSONAL INJURY, DEAH, OR SEVERE PROPERY OR ENVIRONMENAL DAMAGE. S PRODUCS WHICH ARE NO SPECIFIED AS "AUOMOIVE GRADE" MAY ONLY BE USED IN AUOMOIVE APPLICAIONS A USER S OWN RISK. Resale of S products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by S for the S product or service described herein and shall not create or extend in any manner whatsoever, any liability of S. S and the S logo are trademarks or registered trademarks of S in various countries. Information in this document supersedes and replaces all information previously supplied. he S logo is a registered trademark of SMicroelectronics. All other names are the property of their respective owners. 28 SMicroelectronics - All rights reserved SMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 1/1