STPS30M60DJF. High efficiency power Schottky diode. Features. Description. Very low conduction losses Low forward voltage drop Low thermal resistance

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STPS3M6DJF High efficiency power Schottky diode Datasheet production data Features Very low conduction losses Low forward voltage drop Low thermal resistance K High specified avalanche capability High integration ECOPCK 2 compliant component K K Description The STPS3M6DJF is a power Schottky rectifier, suited for high frequency switch mode power supply and DC to DC converters. Packaged in PowerFLT, this device is intended to be used in notebook, game station and desktop adapters, providing in these applications a good efficiency at both low and high load. Its low profile was especially designed to be used in applications with space-saving constraints. Table 1. PowerFLT 5x6 STPS3M6DJF Device summary Symbol Value I F(V) 3 V RRM 6 V V F (typ).46 V T (max) 15 C TM: PowerFLT is a trademark of STMicroelectronics pril 212 Doc ID 2312 Rev 1 1/8 This is information on a product in full production. www.st.com 8

Characteristics STPS3M6DJF 1 Characteristics Table 2. bsolute ratings (limiting values, anode terminals 1 and 3 short circuited) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I F(RMS) Forward rms current 45 I F(V) verage forward current δ =.5 T c = 1 C 3 I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 25 P (1) RM Repetitive peak avalanche power 35 W V RM Maximum repetitive peak avalanche voltage t p < 1 µs, T < 15 C I R < 13 8 V T stg Storage temperature range -65 to +175 C T Maximum operating unction temperature (2) 15 C 1. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics application notes N1768 and N225. dptot 1 2. < condition to avoid thermal runaway for a diode on its own heatsink dt Rth(-a) Table 3. Thermal resistance Symbol Parameter Value Unit R th(-c) Junction to case 2. C/W Table 4. Static electrical characteristics (anode terminals short circuited) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop T = 25 C - - 9 µ V R = V RRM T = 125 C - 2 5 m T = 25 C - -.59 I F = 15 T = 125 C -.46.52 V T = 25 C - -.72 I F = 3 T = 125 C -.57.67 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: P =.55 x I F(V) +.4 x I F 2 (RMS) 2/8 Doc ID 2312 Rev 1

STPS3M6DJF Characteristics Figure 1. 3 25 2 15 1 5 P F(V) (W) verage forward power dissipation versus average forward current δ =.1 δ =.5 δ =.2 δ =.5 δ = t / T p δ = 1 5 1 15 2 25 3 35 4 I T F(V) t p () Figure 2. I 35 3 25 2 15 1 F(V) () T verage forward current versus ambient temperature (δ =.5) R th(-a) 5 δ = t p / T t p T amb( C) 25 5 75 1 125 15 = R th(-c) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Normalized avalanche power derating versus unction temperature 1 P RM(tp) P RM(1 µs) 1.2 P RM(T) P RM(25 C) 1.1.8.6.1.4.1.1.1 1 t (µs) p 1 1 1.2 T ( C) 25 5 75 1 125 15 Figure 5. 28 24 2 I () M Non repetitive surge peak forward current versus overload duration (maximum values) Figure 6. 1..9.8.7 Z th(-c) /Rth(-c) Relative variation of thermal impedance unction to case versus pulse duration 16 12 8 T = 25 C c T = 75 C c 4 I M T c = 125 C t δ =.5 t(s) 1.E-3 1.E-2 1.E-1 1.E+.6.5.4.3.2.1. Single pulse t (s) p 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Doc ID 2312 Rev 1 3/8

Characteristics STPS3M6DJF Figure 7. Reverse leakage current versus reverse voltage applied (typical values) Figure 8. Junction capacitance versus reverse voltage applied (typical values) 1.E+3 1.E+2 1.E+1 I (m) R T = 15 C T = 125 C C(pF) 1 F = 1 MHz V osc = 3 mv T = 25 C RMS 1.E+ T = 1 C 1 1.E-1 T = 75 C T = 5 C 1.E-2 T = 25 C V R(V) 1.E-3 5 1 15 2 25 3 35 4 45 5 55 6 V R(V) 1 1 1 1 Figure 9. I FM() 1. Forward voltage drop versus forward current T = 125 C (Maximum values) Figure 1. R th(-a) ( C/W) 25 2 Thermal resistance unction to ambient versus copper surface under tab epoxy printed board FR4, copper thickness = 35 µm 1. T = 125 C (Typical values) 15 1. T = 25 C (Maximum values) 1 5 V FM(V).1..1.2.3.4.5.6.7.8.9 1. 1 2 3 4 5 6 7 8 9 1 S cu (cm²) Figure 11. Reverse safe operating area (t p < 1 µs and T < 15 C) 2 I arm () 15 1 5 V arm 6 65 7 75 8 85 9 95 1 15 11 4/8 Doc ID 2312 Rev 1

STPS3M6DJF Package information 2 Package information Epoxy meets UL94,V Lead-free package In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: www.st.com. ECOPCK is an ST trademark. Table 5. PowerFLT 5x6 dimensions Dimensions Ref. Millimeters Inches D2 Min. Typ. Max. Min. Typ. Max. E2.8 1..31.39 1 e D b L K 2 1.2.5.1.2 2.25.1 b.3.5.12.2 D 5.2.25 D2 4.11 4.31.162.17 e 1.27.5 E E 6.15.242 E2 3.5 3.7.138.146 L.5.8.2.31 K 1.275 1.575.5.62 Figure 12. Footprint (dimensions in mm) 5.35 4.41 3.86 4.33 6.29.98.95 1.27.62 Doc ID 2312 Rev 1 5/8

Package information STPS3M6DJF Figure 13. Tape and reel specifications Dot identifying Pin 1 location 2. 4. Ø 1.55.3 1.75.2 Ø 1.5 5.3 12. 5.5 R.5 6.3 1.2 8. ll dimensions are typical values in mm User direction of unreeling 6/8 Doc ID 2312 Rev 1

STPS3M6DJF Ordering information 3 Ordering information Table 6. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS3M6DJF-TR PS3 M6 PowerFLT 5x6 95 mg 3 Tape and reel 4 Revision history Table 7. Document revision history Date Revision Changes 18-pr-212 1 First issue. Doc ID 2312 Rev 1 7/8

STPS3M6DJF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY TWO UTHORIZED ST REPRESENTTIVES, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 212 STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica www.st.com 8/8 Doc ID 2312 Rev 1