SP pF 24kV Bidirectional Discrete TVS

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Transcription:

SP1312 11pF 24kV Bidirectional Discrete TVS RoHS Pb GREEN Description The SP1312 bidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge protection level for electronic equipment. The SP1312 TVS can safely absorb repetitive ESD strikes of ±24 kv (contact and air discharge as defined in IEC 61000-4-2 without any performance degradation. Additionally, each TVS can safely dissipate a 3A 8/20 surge event as defined in IEC 61000-4-5 2 nd Edition. Pinout Features 0201 Flipchip 1 2 Note: Drawing not to scale ESD, IEC 61000-4-2, ±24kV contact, ±30kV air EFT, IEC 61000-4-4, 40A (5/50ns Lightning, 3A (8/20 as defined in IEC 61000-4-5 2 nd edition Low capacitance of 11pF (@ V R =0V Low leakage current of 0.02μA(TYP at 12V Industries smallest ESD footprint available (01005 Halogen free, lead free and RoHS compliant Functional Block Diagram 1 2 Applications Mobile Phones Smart Phones Camcorders Portable Medical Digital Cameras Wearable Technology Portable Navigation Components Tablets Point of Sale Terminals Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated.

Absolute Maximum Ratings Symbol Parameter Value Units Peak Current (t p =8/20μs 3 1 A T OP Operating Temperature -40 to 125 C T STOR Storage Temperature -55 to 150 C Notes: 1. CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Characteristics (T OP =25ºC Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM I R 1μA 12 V Breakdown Voltage V BR I R =1mA 13 15 V Reverse Leakage Current I LEAK V R =12V 0.02 0.5 μa Clamp Voltage 1 V C =1A, t p =8/20µs, Fwd 18.5 22 V =3A, t p =8/20µs, Fwd 22.5 27 V Dynamic Resistance 2 R DYN TLP, t P =100ns, I/O to I/O 0.48 Ω ESD Withstand Voltage 1 V ESD IEC 61000-4-2 (Contact Discharge ±24 kv IEC 61000-4-2 (Air Discharge ±30 kv Diode Capacitance 1 C D Reverse Bias=0V 11 14 pf Note: 1 Parameter is guaranteed by design and/or component characterization. 2 Transmission Line Pulse (TLP with 100ns width, 2ns rise time, and average window t1=70ns to t2= 90ns Clamp voltage vs. for 8/20μs Waveshape Capacitance vs. Reverse Bias 25.0 12.0 Clamp Voltage-Vc (V 20.0 15.0 10.0 5.0 0.0 1 1.5 2 2.5 3 Peak Pulse Current- (A Capacitance (pf 9.0 6.0 3.0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 Reverse Bias Voltage (V

Temperature TVS Diode Arrays (SPA Diodes Positive Transmission Line Pulsing (TLP Plot 40 35 30 Negative Transmission Line Pulsing (TLP Plot 0-5 -10 TLP Current (A 25 20 15 TLP Current (A -15-20 -25 10-30 5-35 0 0 10 20 30 40 50 60 TLP Voltage (V -40-60 -50-40 -30-20 -10 0 TLP Voltage (V 8/20μs Pulse Waveform 110% 100% 90% 80% Percent of 70% 60% 50% 40% 30% 20% 10% 0% 0.0 5.0 10.0 15.0 20.0 25.0 30.0 Time (μs Soldering Parameters Reflow Condition Pre Heat Pb Free assembly - Temperature Min (T s(min 150 C - Temperature Max (T s(max 200 C - Time (min to max (t s 60 180 secs Average ramp up rate (Liquidus Temp (T L to peak 3 C/second max T P T L T S(max Preheat Ramp-up t P t L Critical Zone TL to TP Ramp-down T S(max to T L - Ramp-up Rate 3 C/second max - Temperature (T L (Liquidus 217 C Reflow - Temperature (t L 60 150 seconds Peak Temperature (T P 260 +0/-5 C T S(min 25 t S time to peak temperature Time Time within 5 C of actual peak Temperature (t p 20 40 seconds Ramp-down Rate 6 C/second max Time 25 C to peak Temperature (T P 8 minutes Max. Do not exceed 260 C

Part Marking System Product Characteristics Lead Plating Lead Material Substrate material Flammability Tin plating Copper bump Silicon UL Recognized compound meeting flammability rating V-0 Ordering Information Part Number Package Min. Order Qty. SP1312-01WTG 01005 Flipchip 15000 Part Numbering System TVS Diode Arrays (SPA Diodes Series Number of Channels SP 1312 01 W T G G= Green T= Tape & Reel Package W:01005 Flipchip Package Dimensions 01005 Flipchip A E A2 D Pin 1 Top View Side View 0.15mm 0.15mm A1 L2 e P Bottom View 0.15mm L1 01005 Flipchip Symbol Millimeters Inches Min Typ Max Min Typ Max A 0.168 0.181 0.194 0.0066 0.0071 0.0076 A1 0.008 0.011 0.014 0.0003 0.0004 0.0006 A2 0.160 0.170 0.180 0.0063 0.0067 0.0071 e 0.280 BSC 0.0110 BSC E 0.200 0.230 0.260 0.0079 0.0091 0.0102 D 0.400 0.430 0.460 0.0157 0.0169 0.0181 F 0.110 0.130 0.150 0.0043 0.0051 0.0059 G 0.180 0.200 0.220 0.0071 0.0079 0.0087 P 0.150 0.170 0.190 0.0059 0.0067 0.0075 0.23mm 0.23mm 0.30mm Recommended soldering pad layout 0.30mm Stencil apertures Stencil thickness : 80um Drawing# : W01-A

Embossed Carrier Tape & Reel Specification 01005 Flipchip Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.