NPN Silicon RF Transistor* For low-distortion broadband output amplifier stages in antenna and telecommunication systems up to GHz at collector currents from 0 ma to 50 ma 4 3 Power amplifiers for DECT and PCN systems Integrated emitter ballast resistor f T = 5.5 GHz * Short term description ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFG35 BFG35 = E = B 3 = E 4 = C - - SOT3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO 5 V Collector-emitter voltage V CES 5 Collector-base voltage V CBO 5 Emitter-base voltage V EBO Collector current I C 300 ma Base current I B 40 Total power dissipation ) P tot W T S 80 C Junction temperature T j 50 C Ambient temperature T A -65... 50 Storage temperature T stg -65... 50 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point ) R thjs 35 K/W T S is measured on the collector lead at the soldering point to the pcb For calculation of RthJA please refer to Application Note Thermal Resistance 005--
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V (BR)CEO 5 - - V I C = ma, I B = 0 Collector-emitter cutoff current I CES - - 00 µa V CE = 5 V, V BE = 0 Collector-base cutoff current I CBO - - 0 na V CB = V, I E = 0 Emitter-base cutoff current I EBO - - µa V EB = V, I C = 0 DC current gain- I C = 00 ma, V CE = 8 V, pulse measured h FE 75 0 60-005--
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit AC Characteristics (verified by random sampling) Transition frequency I C = 00 ma, V CE = 8 V, f = 00 MHz Collector-base capacitance V CB = V, f = MHz, V BE = 0, emitter grounded Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitter-base capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded Noise figure I C = 60 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz Power gain, maximum available ) I C = 00 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz min. typ. max. f T 4 5.5 - GHz C cb -. 3 pf C ce -.5 - C eb - 4 - F -.7 - db G ma -.5 - Transducer gain I C = 00 ma, V CE = 8 V, Z S = Z L = 50Ω, f = 900 MHz Third order intercept point at output V CE = 8 V, I C = 00 ma, f = 900 MHz, Z S = Z L = 50Ω S e - 6.5 - db IP 3-33 - dbm G ma = S /S (k-(k -) / ) 005-- 3
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 00 mw 800 K/W Ptot 600 400 00 RthJS 00 800 600 400 00 0 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 0 40 60 80 0 0 C 50 T S - -7-6 -5-4 -3 - s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC - D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0-7 -6-5 -4-3 - s 0 t p 005-- 4
Package SOT3 BFG35 Package Outline A 6.5 ±0. 3 ±0. 0. MAX..6 ±0. 4 7 ±0.3 5 MAX. 3.5 ±0. B 3 0.7 ±0. 4.6.3 0.5 MIN. 0.8 ±0.04 Foot Print 0.5 M A 3.5 0.5 M B.4 4.8.4 Marking Layout.. Manufacturer Date code (Year/Calendarweek) 005, June Type code BCP5-6 Pin Example Packing Reel ø80 mm =.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 8 0.3 MAX. 7.55 Pin 6.8.75 005-- 5
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