YM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BV DSS 3V R DS(ON) Max I D Max T A = +5 C 3mΩ @ V GS = V 6.A 4mΩ @ V GS = 4.5V 5.A Description and Applications This MOSFET is designed to minimize the on-state resistance (R DS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Body Control Electronics Power Management Functions DC-DC Converters Features and Benefits Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes & ) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (Q) Mechanical Data Case: U-DFN-6 (Type B) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V- Moisture Sensitivity: Level per J-STD- Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-, Method 8 e4 Terminals Connections: See Diagram Below Weight:.65 grams (Approximate) U-DFN-6 (Type B) D Pin G S G D S Bottom View D G S G Internal Schematic S Ordering Information (Note 4) Notes: Part Number Case Packaging -7 U-DFN-6 (Type B) 3,/Tape & Reel -3 U-DFN-6 (Type B),/Tape & Reel. No purposely added lead. Fully EU Directive /95/EC (RoHS), /65/EU (RoHS ) & 5/863/EU (RoHS 3) compliant.. See https:///quality/lead-free/ for more information about Diodes Incorporated s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <9ppm bromine, <9ppm chlorine (<5ppm total Br + Cl) and <ppm antimony compounds. 4. For packaging details, go to our website at https:///design/support/packaging/diodes-packaging/. Marking Information U-DFN-6 (Type B) N5 N5 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: F = 8) M = Month (ex: 9 = September) Date Code Key Year 5 6 7 8 9 Code C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 3 4 5 6 7 8 9 O N D of 7
Maximum Ratings (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V DSS 3 V Gate-Source Voltage V GSS ± V Continuous Drain Current (Note 6) V GS = V Steady T A = +5C 6. I State D T A = +75C 5. A Maximum Continuous Body Diode Forward Current (Note 6) I S A Pulsed Body Diode Forward Current (37μs Pulse, Duty Cycle = %) I SM A Pulsed Drain Current (s Pulse, Duty Cycle = %) I DM 5 A Avalanche Current (Note 7) L =.mh I AS A Avalanche Energy (Note 7) L =.mh E AS mj Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P D. W Thermal Resistance, Junction to Ambient (Note 5) Steady state 7 R t<s JA 75 C/W Total Power Dissipation (Note 6) P D.7 W Thermal Resistance, Junction to Ambient (Note 6) Steady state 7 R t<s JA 43 C/W Thermal Resistance, Junction to Case (Note 6) R JC 9 Operating and Storage Temperature Range T J, T STG -55 to +5 C Electrical Characteristics (@T A = +5 C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV DSS 3 - - V V GS = V, I D = 5μA Zero Gate Voltage Drain Current T J = +5 C I DSS - -. μa V DS = 3V, V GS = V Zero Gate Voltage Drain Current T J = +5 C (Note 9) I DSS - - μa V DS = 3V, V GS = V Gate-Source Leakage I GSS - - ± na V GS = ±V, V DS = V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V GS(TH)..5. V V DS = V GS, I D = 5μA Static Drain-Source On-Resistance R DS(ON) - 5 3 3 4 mω V GS = V, I D = 5.8A V GS = 4.5V, I D = 4.8A Diode Forward Voltage V SD -.75. V V GS = V, I S = A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss - 5 - pf V DS = 5V, V GS = V, Output Capacitance C oss - 5 - pf f =.MHz Reverse Transfer Capacitance C rss - 44 - pf Gate Resistance R g -.3 - Ω V DS = V, V GS = V, f = MHz Total Gate Charge (V GS = 4.5V) Q g - 5. - nc Total Gate Charge (V GS = V) Q g -.6 - nc Gate-Source Charge Q gs -.3 - nc V DS = 5V, I D = 5.8A Gate-Drain Charge Q gd -.8 - nc Turn-On Delay Time t D(ON) -. - ns Turn-On Rise Time t R -.6 - ns Turn-Off Delay Time t D(OFF) - 9.7 - ns Turn-Off Fall Time t F -. - ns Notes: 5. Device mounted on FR-4 substrate PC board, oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, oz copper, with inch square copper plate. 7. I AS and E AS ratings are based on low frequency and duty cycles to keep T J = +5 C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. V DD = 5V, V GS = V, R L =.6Ω, R G = 3Ω of 7
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 3. 5. V GS =.V V GS =4.V 8 6 V DS =5V. 5. V GS =4.5V V GS =3.5V V GS =3.V 4 8 T A =5. 6 T A =5 5.. V GS =.5V V GS =.V 3 4 5 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Output Characteristic 4 T A =85 T A =5 T A =-55.5.5.5 3 3.5 4 4.5 5 V GS, GATE-SOURCE VOLTAGE (V) Figure. Typical Transfer Characteristic.5. I D =3.6A.4.8 V GS =4.5V.3.6. V GS =V.4.. I D =.8A 3 5 7 9 3 5 7 9 I D, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 6 8 4 6 8 V GS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic.5.45.4 V GS = V 5.8.6 V GS =V, I D =5.A.35.3.5..5 5 85 5-55.4. V GS =4.5V, I D =3.A..8.5 4 6 8 4 6 8 Figure 5. Typical On-Resistance vs. Drain Current and Temperature.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( ) Figure 6. On-Resistance Variation with Temperature 3 of 7
V GS, GATE-SOURCE VOLTAGE (V) I S, SOURCE CURRENT (A) C T, JUNCTION CAPACITANCE (pf) R DS(ON), DRAIN-SOURCE ON-RESISTANCE (W) V GS(TH), GATE THRESHOLD VOLTAGE (V).8.7.8.6.6.5 V GS =4.5V, I D =3.A.4 I D =ma.4.3. V GS =V, I D =5.A. I D =5A..8-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( ) Figure 7. On-Resistance Variation with Temperature.6-5 -5 5 5 75 5 5 T J, JUNCTION TEMPERATURE ( ) Figure 8. Gate Threshold Variation vs Junction Temperature 8 f=mhz 6 4 V GS =V, T A =5 C iss 8 V GS =V, T A =5 V GS =V, T A =85 C oss 6 4 V GS =V, T A =5 V GS =V, T A =-55.3.6.9..5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current C rss 5 5 5 3 V DS, DRAIN-SOURCE VOLTAGE (V) Figure. Typical Junction Capacitance R DS(ON) Limited P W =µs 8 6 4 4 6 8 Qg, TOTAL GATE CHARGE (nc) Figure. Gate Charge V DS =5V, I D =3.6A 4 of 7.. DC P W =s P W =s T J(Max) =5 T A =5 Single Pulse DUT on *MRP board V GS =4.5V P W =ms P W =ms P W =ms. V DS, DRAIN-SOURCE VOLTAGE (V) Figure. SOA, Safe Operation Area
r(t), TRANSIENT THERMAL RESISTANCE D=.5 D=.3 D=.7 D=.9. D=. D=.5. D=. D=. D=.5 R θja (t)=r(t) θja (t)=r(t)** R θja θja R θja =4 /W θja =4 /W D=Single Pulse Duty Duty Cycle, Cycle, D=t D=t // t t. E-5.... t, PULSE DURATION TIME (sec) Figure 3. Transient Thermal Resistance 5 of 7
Package Outline Dimensions Please see http:///package-outlines.html for the latest version. U-DFN-6 (Type B) A3 A A Seating Plane D R.5 (Pin # ID) E z E k L z U-DFN-6 Type B Dim Min Max Typ A.545.65.575 A..5. A3 - -.3 b..3.5 D.95.75..5.7.6 e - -.65 E.95.75. E.9.. k - -.45 L.5.35.3 z - -.5 z - -.75 All Dimensions in mm z e b Suggested Pad Layout Please see http:///package-outlines.html for the latest version. U-DFN-6 (Type B) C X Y Y(x) X(x) G G Y Value Dimensions (in mm) C.65 G.5 G.45 X.35 X.6 X.65 Y.5 Y. Y.3 X 6 of 7
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