Dual INT-A-PAK Low Profile Half Bridge (Standard Speed IGBT), 4 A VS-GA4TD6S FEATURES Gen 4 IGBT technology Standard: optimized for hard switching speed Dual INT-A-PAK Low Profile PRIMARY CHARACTERISTICS V CES 6 V I C DC at T C = 25 C 75 A V CE(on) (typical) at 4 A, 25 C.24 V Speed DC to khz Package Dual INT-A-PAK low profile Circuit configuration Half bridge Low V CE(on) Square RBSOA HEXFRED antiparallel diode with ultrasoft reverse recovery characteristics Industry standard package Al 2 O 3 DBC UL approved file E78996 Designed for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 BENEFITS Increased operating efficiency Performance optimized as output inverter stage for TIG welding machines Direct mounting on heatsink Very low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V Continuous collector current I () T C = 25 C 75 C T C = 8 C 525 Pulsed collector current I CM Clamped inductive load current I LM A T C = 25 C 29 Diode continuous forward current I F T C = 8 C 45 Gate to emitter voltage V GE ± 2 V T C = 25 C 563 Maximum power dissipation (IGBT) P D T C = 8 C 875 W Any terminal to case RMS isolation voltage V ISOL (V RMS t = s, ) 35 V Note () Maximum continuous collector current must be limited to 5 A to do not exceed the maximum temperature of terminals Revision: -Dec-7 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa 6 - - V GE = 5 V, I C = 3 A -.4.35 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 4 A -.24.52 V GE = 5 V, I C = 3 A, -.8.29 V V GE = 5 V, I C = 4 A, -.2.5 Gate threshold voltage V GE(th) V CE = V GE, I C = 25 μa 3. 4.6 6.3 V GE = V, V CE = 6 V -.75 Collector to emitter leakage current I CES V GE = V, V CE = 6 V, -.8 ma I FM = 3 A -.48.75 Diode forward voltage drop V FM I FM = 4 A -.63.98 I FM = 3 A, -.5.77 V I FM = 4 A, -.7 2.4 Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Turn-on switching loss E on - 8.5 - Turn-off switching loss E off I = 4 A, V = 36 V, V = 5 V, C CC GE R g =.5, L = 5 μh, - 3 - Total switching loss E tot - 2.5 - Turn-on switching loss E on - 2 - mj Turn-off switching loss E off - 63 - Total switching loss E tot - 84 - Turn-on delay time t d(on) I = 4 A, V = 36 V, V = 5 V, C CC GE R g =.5, L = 5 μh, - 532 - Rise time t r - 377 - Turn-off delay time t d(off) - 496 - ns Fall time t f - 33 - Reverse bias safe operating area RBSOA T J = 5 C, I C = A, V CC = 4 V, V P = 6 V, R g = 22 V GE = 5 V to V, L = 5 μh Fullsquare Diode reverse recovery time t rr - 5 79 ns Diode peak reverse current I rr I F = 3 A, di F /dt = 5 A/μs, V CC = 4 V, - 43 59 A Diode recovery charge Q rr - 3.9 6.3 μc Diode reverse recovery time t rr - 236 265 ns Diode peak reverse current I rr I F = 3 A, di F /dt = 5 A/μs, V CC = 4 V, - 64 8 A Diode recovery charge Q rr - 8.6. μc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Operating junction and storage temperature range T J, T Stg -4-5 C Junction to case per leg IGBT - -.8 R thjc Diode - -.4 C/W Case to sink per module R thcs -.5 - Mounting torque case to heatsink: M6 screw 4-6 case to terminal, 2, 3: M5 screw 2-5 Nm Weight - 27 - g Revision: -Dec-7 2 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S 93363_ 93363_2 Allowable Case Temperature ( C) 93363_3 8 7 6 5 4 3 2 8 7 6 5 4 3 2 6 4 2.25.5.75..25.5.75 2. V CE (V) Fig. - Typical Output Characteristics,, V GE = 5 V V GE = 2 V V GE = 5 V V GE = 8 V.25.5.75..25.5.75 2. 8 6 4 2 V CE (V) V GE = 9 V Fig. 2 - Typical Output Characteristics, DC 2 3 4 5 6 7 8 I C - Continuous Collector Current (A) Fig. 3 - Maximum DC IGBT Collector Current vs. Case Temperature V CE (V) 93363_4 93363_5 V geth (V) 93363_6.7.6.5.4.3.2...9.8.7 A 6 A 3 A.6 2 4 6 8 2 4 6 T J ( C) 4 A Fig. 4 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V 8 7 6 5 4 3 2 5. 4.5 4. 3.5 3. 2.5 V CE = 2 V 3 4 5 6 7 8 9 V GE (V) Fig. 5 - Typical IGBT Transfer Characteristics 2..4.5.6.7.8.9. I C (ma) Fig. 6 - Typical IGBT Gate Threshold Voltage Revision: -Dec-7 3 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S 93363_7 V CE (V) Fig. 7 - IGBT Reverse Bias SOA, T J = 5 C, V GE = 5 V, R g = 22 Allowable Case Temperature ( C) 6 4 2 DC 8 6 4 2 4 8 2 6 2 24 93363_ I F - Continuous Forward Current (A) Fig. - Maximum DC Forward Current vs. Case Temperature 75 5 25 I CES (ma).. Energy (mj) 75 5 E off 93363_8. 2 3 4 5 6 V CES (V) Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 6 93363_ 25 E on 2 3 4 Fig. - Typical IGBT Energy Loss vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh 5 I F (A) 93363_9 4 3 2.5..5 2. 2.5 V FM (V) Fig. 9 - Typical Diode Forward Characteristics Switching Time (ns) 93363_2 td(off) t d(on) 2 3 4 Fig. 2 - Typical IGBT Switching Time vs. I C,, V CC = 36 V, R g =.5, V GE = 5 V, L = 5 μh t f t r Revision: -Dec-7 4 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S Energy (mj) 93363_3 Switching Time (ns) 75 5 25 75 5 25 93363_4 E off E on 5 5 2 25 R g (Ω) Fig. 3 - Typical IGBT Energy Loss vs. R g,, I C = 4 A, V CC = 36 V, V GE = 5 V, L = 5 μh t f t d(off) t d(on) t r 5 5 2 25 R g (Ω) Fig. 4 - Typical IGBT Switching Time vs. R g,, I C = 4 A, V CC = 36 V, V GE = 5 V, L = 5 μh t rr (ns) 93363_5 I rr (A) 93363_6 3 28 26 24 22 2 8 6 4 2 2 3 4 5 6 7 8 9 di F /dt (A/μs) Fig. 5 - Typical Reverse Recovery Time vs. di F /dt, V CC = 4 V, I F = 3 A 3 2 9 8 7 6 5 4 3 2 2 3 4 5 6 7 8 9 di F /dt (A/µs) Fig. 6 - Typical Reverse Recovery Current vs. di F /dt, V CC = 4 V, I F = 3 A Q rr (μc) 93363_7 22 2 8 6 4 2 8 6 4 2 T J = 25 C 2 3 4 5 6 7 8 9 di F /dt (A/μs) Fig. 7 - Typical Reverse Recovery Charge vs. di F /dt, V CC = 4 V, I F = 3 A Revision: -Dec-7 5 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S Z thjc - Thermal Impedance Junction to Case ( C/W)... D =.5 D =.2 D =. D =.5 D =.2 D =. DC.. 93363_8.... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W).. D =.5 D =.2 D =. D =.5 D =.2 D =. DC 93363_9...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) ORDERING INFORMATION TABLE Device code G A 4 T D 6 S 2 3 4 5 6 7 - Insulated gate bipolar transistor (IGBT) 2 - A = Gen 4 IGBT 3 - Current rating (4 = 4 A) 4 - Circuit configuration (T = half-bridge) 5 - Package indicator (D = dual INT-A-PAK low profile) 6 - Voltage rating (6 = 6 V) 7 - Speed / type (S = standard speed IGBT) Revision: -Dec-7 6 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GA4TD6S CIRCUIT CONFIGURATION 3 4 5 6 7 2 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95435 Revision: -Dec-7 7 Document Number: 93363 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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