The egan FET Journey Continues Performance comparison using egan FETs in 6.78 MHz class E and ZVS class D Wireless Power Transfer Michael de Rooij Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 1
Agenda Why Wireless Energy Wireless Coil Overview Class E for Wireless Power Overview ZVS Class D for Wireless Power Overview Why egan FETs for Wireless Energy Transfer Device comparison Experimental performance Summary egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 2
Wireless Coil-Set Overview L rp Ideal Transformer L rs L mp L ms C devs L devs L src L dev Coil Set C devp C out R DCload Z load EPC - The Leader in egan FETs www.epc-co.com 3
Why Wireless Energy Mobile device charging Convenience Extended battery life Medical Implants Quality of life improvement Life extender Hazardous environment systems Explosive atmosphere Corrosive locations High Voltage EPC - The Leader in egan FETs www.epc-co.com 4
Class E Overview Switch voltage rating 3.56 Supply (V DD ). C OSS absorbed into matching network. Susceptible to load variation - high FET losses Coil Voltage 0.707 V DD [V RMS ] V DD V / I + L RFck L e C s 3.56 x V DD V DS Q 1 C sh Z load 50% I D Ideal Waveforms time EPC - The Leader in egan FETs www.epc-co.com 5
ZVS Voltage Mode Class D Switch voltage rating = Supply (V DD ). C OSS Voltage is transitioned by the ZVS tank ZVS tank circuit does not carry load current Coil Voltage = ½ V DD [V RMS ] + V DD Q 2 ZVS tank C s V / I V DD Q 1 L ZVS C ZVS Z load V DS I LZVS 50% EPC - The Leader in egan FETs www.epc-co.com 6 I D Ideal Waveforms time
Why egan FETs for Wireless Low C ISS and C OSS Zero Q RR Low R DS(on) for equal voltage rating Low profile Gate Drivers available: LM5113 LM5114 UCC27611 dv/dt immunity EPC - The Leader in egan FETs www.epc-co.com 7
egan FET Low Voltage Family Solder side View Gate 2.1 x 1.6 mm Substrate (Connect to Source on PWB) Drain Source Part Number Package (mm) V DS (V) V GS (V) R DS(on) @5V (mω) Q G @5 V Typ. (nc) egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 8 Q GS Typ. (nc) Q GD Typ. (nc) R G Typ. (Ω) V th Typ. (V) EPC2015 LGA 4.1x1.6 40 6 4 10.5 3 2.2 0.6 1.4 0 33 150 EPC2014 LGA 1.7x1.1 40 6 16 2.5 0.67 0.48 0.6 1.4 0 10 150 EPC2001 LGA 4.1x1.6 100 6 7 8 2.3 2.2 0.6 1.4 0 25 125 EPC2016 LGA 2.1x1.6 100 6 16 4.1 0.93 0.75 0.6 1.4 0 11 125 EPC2007 LGA 1.7x1.1 100 6 30 2.1 0.5 0.6 0.6 1.4 0 6 125 EPC2010 LGA 3.6x1.6 200 6 25 5 1.3 1.7 0.6 1.4 0 12 125 EPC2012 LGA 1.7x0.9 200 6 100 1.5 0.33 0.57 0.6 1.4 0 3 125 Q RR (nc) I D (A) T J Max. ( C)
Ultra High Frequency egan FETs EPC Part No. BV (V) Max. R DS(ON) (mω) (V GS = 5V, Min. Peak Id (A) (Pulsed, 25 o C, I D = 0.5 A) T pulse = 300 µs) Typical Charge (pc) Q G Q GD Q GS Q OSS Q RR Typical Capacitance (pf) (V DS = 20 V; V GS = 0 V) C ISS C OSS C RSS EPC8004 40 125 7.5 358 31 110 493 0 45 17 0.4 EPC8007 40 160 6 302 25 97 406 0 39 14 0.3 EPC8008 40 325 2.9 177 12 67 211 0 25 8 0.2 EPC8009 65 138 7.5 380 36 116 769 0 47 17 0.4 EPC8005 65 275 3.8 218 18 77 414 0 29 9.7 0.2 EPC8002 65 530 2 141 9.4 59 244 0 21 5.9 0.1 EPC8003 100 300 5 315 34 110 1100 0 38 18 0.2 EPC8010 100 160 7.5 354 32 109 1509 0 47 18 0.2 egan is a registered trademark of Efficient Power Conversion Corporation EPC - The Leader in egan FETs www.epc-co.com 9
Wireless Power Figure of Merit All topologies are ZVS: Q G Q GD only C OSS is absorbed in matching excluded Q RR ignored poorly defined & egan FETs are zero and assuming optimal operation C OSS still important: Drives off resonance losses Determines design-ability FOM R Q WPT DS(on) G Q GD EPC - The Leader in egan FETs www.epc-co.com 10
V GS = 5 V V GS = 10 V V GS = 5 V Figure of Merit Device Comparison FoM WPT [nc mω] 10000 1000 SE-CE ZVS-CD 100 10 1 EPC2012 MOSFET5 EPC8009 FOM WPT R DS(on) EPC - The Leader in egan FETs www.epc-co.com 11 Q G Q GD
Experimental Background Operating setup: On resonance tuned source coil Device tuning is fixed Performance testing: Fixed load, variable supply (Peak Performance) Fixed load voltage (15 V), variable DC load (20:1 ratio 10 Ω through 200 Ω) (Load Regulation) Category 3 power limited Constant Coil Current, emulates charging smart phone EPC - The Leader in egan FETs www.epc-co.com 12
Experimental Setup Overview Amplifiers: EPC9502 (EPC2012) Class E EPC9503 (MOSFET5) Class E EPC9029 (EPC8009) ZVS Class D Source Coil: A4WP Class 3 Compliant Device Coil: A4WP Category 3 Compliant Class 3 Source Coil Amplifier Category 3 Device EPC - The Leader in egan FETs www.epc-co.com 13
Class E Amplifiers EPC2012 MOSFET 5 L e = 500 nh C sh = 82 pf Underneath Coil L e = 500 nh C sh = 100 pf Underneath Coil LM5113 L RFchck = 150 µh UCC27511 L RFchck = 150 µh EPC - The Leader in egan FETs www.epc-co.com 14
egan FET ZVS Class D Amplifier LM5113 EPC8009 x2 Dead-time Adjust L ZVS = 500 nh C ZVS = 1 µf EPC - The Leader in egan FETs www.epc-co.com 15
Efficiency [%] [%] Input Voltage [V] [V] 84 82 80 Peak Performance Results Peak Efficiency, Single load capability Variable Supply, Fixed Load Single Category 3 Power zone Two Category 3 s Power zone Class 3 Limit Class 4 Limit 40 35 30 78 76 74 72 η ZVS-CD R DC =50 Ω η CE-2012 R DC =25 Ω η CE-FET5 R DC =25 Ω V in ZVS-CD V in CE-2012 V in CE-FET5 0 2 4 6 8 10 12 14 16 18 20 22 24 DC Load Power [W] 25 20 15 10 EPC - The Leader in egan FETs www.epc-co.com 16
Efficiency [%] Output Power [W] Load Regulation Results 85 80 75 Load Regulation (V out = 15 V) Class 4 Limit Class 3 Limit η ZVS-CD η CE-2012 η CE-FET5 P out 24 21 18 70 15 65 60 55 50 Two Category 3 s Power zone Category 3 Power zone 12 9 6 3 45 0 0 20 40 60 80 100 120 140 160 180 200 DC Load Resistance [Ω] EPC - The Leader in egan FETs www.epc-co.com 17
Efficiency [%] [%] Output Power [W] [W] Load Variation Results Evaluation Load profile emulating charging Smart Phone A4WP Category 3 Device 80 75 70 65 60 η ZVS-CD η CE-2012 η CE-FET5 P out 7 6 5 4 3 2 55 1 50 0 0 20 40 60 80 100 120 140 160 180 200 DC Load Resistance [Ω] EPC - The Leader in egan FETs www.epc-co.com 18
Class E Thermal Performance LM5113 EPC2012 UCC27511 MOSFET5 V DC = 30 V P out = 21.4 W R DCload = 25.3 Ω V DC = 30 V P out = 20.7 W R DCload = 25.3 Ω EPC - The Leader in egan FETs www.epc-co.com 19
ZVS Class D Thermal Performance LM5113 EPC8009 V DC = 38 V P out = 23.5 W R DCload = 50.3 Ω EPC - The Leader in egan FETs www.epc-co.com 20
Summary egan FETs are disruptive in Wireless Energy: Enable Wireless Power Yield Higher Efficiency than MOSFETs Including over a wide load range Can easily operate at 6.78 MHz Easy to use Drive new topologies e.g. ZVS Class D Growing support e.g. Gate drivers and products use them. EPC - The Leader in egan FETs www.epc-co.com 21
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Output Power [W] Evaluation Load Profile Emulates Mobile phone charging Based on ZVS class D operating with 250 ma fixed supply current into tuned source coil Max. output power set at 10 Ω DC load Resistance (assumes typical post regulator current draw) 7 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 DC Load Resistance [Ω] EPC - The Leader in egan FETs www.epc-co.com 23