Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features A1 A2 A1 K1 Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package ISOTOP: Insulated voltage: 25 VRMS sine A2 ISOTOP K1 K2 K2 Description This device that uses ST Turbo 2 6 V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and freewheeling diode. Symbol IF(AV) VRRM Table 1: Device summary Value 2 x 6 A 6 V Tj (max.) 15 C VF (typ.) trr (max.) TM: ISOTOP is a trademark of STMicroelectronics.95 V 7 ns January 218 DocID1766 Rev 4 1/9 This is information on a product in full production. www.st.com
Characteristics STTH12L6TV 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 6 V IF(RMS) Forward rms current 12 A IF(AV) Average forward current, δ =.5 TC = 65 C, per diode 6 A IFSM Surge non repetitive forward current tp = 1 ms sinusoidal 5 A Tstg Storage temperature range -55 to +15 C Tj Maximum operating junction temperature 15 C Table 3: Thermal parameters Symbol Parameter Maximum values Unit Rth(j-c) Per diode.98 Junction to case Total.54 C/W Rth(c) Coupling.1 When the diodes 1 and 2 are used simultaneously: Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 5 ms, δ < 2% (2) Pulse test: tp = 38 µs, δ < 2% Tj = 25 C - 5 VR = VRRM Tj = 125 C - 5 5 Tj = 25 C - 1.55 IF = 6 A Tj = 15 C -.95 1.2 µa V To evaluate the maximum conduction losses, use the following equation: P =.93 x IF(AV) +.45 x IF 2 (RMS) 2/9 DocID1766 Rev 4
Table 5: Dynamic characteristics (per diode) Characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit trr IRM tfr VFP Reverse recovery time Reverse recovery current Forward recovery time Forward recovery voltage Tj = 25 C Tj = 125 C Tj = 25 C Tj = 25 C IF =.5 A, Irr =.25 A, IR = 1 A IF = 1 A, dif/dt = 5 A/μs, VR = 3 V IF = 6 A, dif/dt = 4 A/μs, dif/dt = 1 A/μs IF = 6 A, dif/dt = 2 A/μs VFR = 1.1 x VFmax IF = 6 A, dif/dt = 2 A/μs VFR = 1.1 x VFmax - 7-75 15 ns - 14 19 A - 5 ns - 3 V DocID1766 Rev 4 3/9
Characteristics 1.1 Characteristics (curves) Figure 1: Conduction losses versus average forward current (per diode) STTH12L6TV Figure 2: Forward voltage drop versus forward current (per diode) 14 12 1 8 P(W) δ =.5 δ =.2 δ =.1 δ=.5 δ = 1 6 4 T 2 I =tp/t tp F(AV) (A) δ 1 2 3 4 5 6 7 8 9 1 Figure 3: Relative variation of thermal impedance junction to case versus pulse duration Figure 4: Peak reverse recovery current versus dif/dt (typical values, per diode) 1..9.8.7.6.5.4.3.2 Z th(j-c) /R th(j-c) T I RM (A) 6 V R = 4V T = 125 C.1 di F/dt(A /µs) S ingle pulse t p(s ) δ =tp/t tp. 5 1 15 2 25 3 35 4 45 5 1.E -3 1.E -2 1.E -1 1.E + 1.E +1 5 4 3 2 1 j I F=.5 x I I F=2 x I Figure 5: Reverse recovery time versus dif/dt (typical values, per diode) Figure 6: Reverse recovery charges versus dif/dt (typical values, per diode) 12 1 t (ns) rr V R = 4V T j = 125 C 4.5 4. 3.5 Q (µc) rr V R = 4V T j = 125 C I F=2 x I 8 6 I F=2 x I I F=.5 x I 3. 2.5 2. I F=.5 x I 4 1.5 2 di /dt(a/µs) F 5 1 15 2 25 3 35 4 45 5 1..5 di F/dt(A/µs). 1 2 3 4 5 4/9 DocID1766 Rev 4
Figure 7: Reverse recovery softness factor versus dif/dt (typical values, per diode) Characteristics Figure 8: Relative variations of dynamic parameters versus junction temperature 1.6 1.4 1.2 Sfactor I F< 2 x I V R=4 V T j = 125 C 1..8.6.4.2. di /dt(a/µs) F 5 1 15 2 25 3 35 4 45 5 Figure 9: Transient peak forward voltage versus dif/dt (typical values, per diode) Figure 1: Forward recovery time versus dif/dt (typical values, per diode) 8 7 V FP (V) T j =125 C 4 35 t (ns) fr V F R= 1.1 x VF max. T j = 125 C 6 3 5 25 4 2 3 15 2 1 1 di F/dt(A/µs) 5 1 15 2 25 3 35 4 45 5 5 di /dt(a/µs) F 1 2 3 4 5 Figure 11: Junction capacitance versus reverse voltage applied (typical values, per diode) 1 C (pf) F = 1MH z V O S C= 3mV RMS T j =25 C 1 1 V (V) R 1 1 1 1 DocID1766 Rev 4 5/9
Package information STTH12L6TV 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value: 1.3 N m Maximum torque value: 1.5 N m STMicroelectronics strongly recommends the use of the screws delivered with this product. The use of any other screws is entirely at the user's own risk and will invalidate the warranty. 2.1 ISOTOP package information Figure 12: ISOTOP package outline 6/9 DocID1766 Rev 4
Package information Table 6: ISOTOP package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A 11.8 12.2.46.48 A1 8.9 9.1.35.358 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 E2 24.8.976 G 14.9 15.1.587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 F 4.1 4.3.161.169 F1 4.6 5.181.197 H -.5.1 -.2.4 Diam P 4 4.3.157.169 P1 4 4.4.157.173 S 3.1 3.3 1.185 1.193 DocID1766 Rev 4 7/9
Ordering information STTH12L6TV 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode STTH12L6TV1 STTH12L6TV1 ISOTOP 27 g (without screws) 1 (with screws) Tube 4 Revision history Table 8: Document revision history Date Revision Changes 7-Sep-24 1 First issue. 4-Apr-211 2 Updated Chapter 2: Package information.. 2-Jan-217 3 22-Jan-218 4 Updated section "Features" and section 2.2: "ISOTOP package information". Added cote "H" (-.5 mm min -.1mm max in ISOTOP package information. 8/9 DocID1766 Rev 4
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