STTH6L6TV Turbo 2 ultrafast high voltage rectifier Main product characteristics I (AV) V RRM T j V (typ) t rr (typ) eatures and benefits Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses Insulated package: Electrical insulation = 25 V RMS Capacitance = 45 p Description 2 x 4 A 6 V 15 C 1.3 V 5 ns The STTH6L6TV, which is using ST Turbo 2 6V technology, is specially suited for use in switching power supplies, and industrial applications (such as welding), as rectification diode. A1 K1 A2 K2 STTH6L6TV1 A1 K1 A2 K2 Order codes Part Number STTH6L6TV1 STTH6L6TV2 A1 K2 K1 A2 STTH6L6TV2 A1 K2 K1 A2 ISOTOP Marking STTH6L6TV1 STTH6L6TV2 Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 6 V I (RMS) RMS forward current A I (AV) Average forward current, δ =.5 T c = 75 C per diode 3 A T c = 7 C per diode 4 I SM Surge non repetitive forward current t p = ms Sinusoidal 2 A T stg Storage temperature range -55 to + 15 C T j Maximum operating junction temperature 15 C October 26 Rev 3 1/7 www.st.com
Characteristics STTH6L6TV 1 Characteristics Table 2. Thermal parameters Symbol Parameter Value Unit R th(j-c) Junction to case Per diode 1.6 Total.85 R th(c) Coupling thermal resistance.1 C/W Table 3. When the diodes are used simultaneously: T j(diode1) = P (diode1) x R th(j-c) (per diode) + P (diode2) x R th(c) Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I R (1) Reverse leakage current T j = 25 C 25 V R = V RRM T j = 125 C 25 25 µa V (2) orward voltage drop T j = 25 C 1.55 I = 6 A T j = 15 C 1. 1.25 V 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % Table 4. To evaluate the conduction losses use the following equation: P =.95 x I (AV) +. I 2 (RMS) Dynamic characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit t rr Reverse recovery time I =.5 A, I rr =.25 A I R = 1 A, T j = 25 C I = 1 A, di /dt = 5 A/µs, V R = 3 V, T j = 25 C 65 65 9 ns I RM Reverse recovery current I = 3 A, di /dt = A/µs, V R = 4 V, T j = 125 C 11.5 16 A t fr orward recovery time I = 3 A di /dt = A/µs V R = 1.1 x V max, T j = 25 C 5 ns V P orward recovery voltage I = 3 A, di /dt = A/µs, V R = 1.1 x V max, T j = 25 C 2.5 V 2/7
STTH6L6TV Characteristics igure 1. Conduction losses versus average current (per diode) igure 2. orward voltage drop versus forward current (per diode) 8 7 6 5 P(W) δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 9 8 7 6 I M(A) T j=15 C (typical values) T j=15 C (maximum values) 4 3 2 T I (AV) (A) δ=tp/t tp 2 3 4 5 5 4 3 2 V M(V) T j=25 C (maximum values)..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 igure 3. Relative variation of thermal impedance junction to case versus pulse duration igure 4. Peak reverse recovery current versus di /dt (typical values, per diode) 1..9.8.7.6.5.4.3.2.1. Z th(j-c) /Rth(j-c) Single pulse t (s) p δ=tp/t 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 T tp 45 4 35 3 25 2 15 5 I RM(A) V R=4V I =.5 x I(AV) I=I (AV) I =2 x I(AV) 5 15 2 25 3 35 4 45 5 igure 5. Reverse recovery time versus di /dt (typical values, per diode) igure 6. Reverse recovery charges versus di /dt (typical values, per diode) 8 7 t (ns) rr V R=4V 35 3 Q (nc) rr V R=4V I =2 x I(AV) 6 5 4 3 I =2 x I(AV) I=I (AV) I =.5 x I(AV) 25 2 15 I=I (AV) I =.5 x I(AV) 2 5 15 2 25 3 35 4 45 5 5 2 3 4 5 3/7
Characteristics STTH6L6TV igure 7. Reverse recovery softness factor versus di /dt (typical values, per diode) igure 8. Relative variations of dynamic parameters versus junction temperature 1.6 S factor 1.4 1.4 I < 2 x I(AV) V R=4V 1.2 S factor 1.2 1. 1..8.6.4.2. 5 15 2 25 3 35 4 45 5.8.6.4.2. QRR trr IRM T ( C) j I=I (AV) V R=4V Reference: 25 5 75 125 igure 9. Transient peak forward voltage versus di /dt (typical values, per diode) igure. orward recovery time versus di /dt (typical values, per diode) 9 8 7 6 5 4 3 2 1 V P(V) I=I (AV) 5 15 2 25 3 35 4 45 5 45 4 35 3 25 2 15 5 t (ns) fr I=I (AV) V R=1.1 x V max. 2 3 4 5 igure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) C(p) =1MHz V OSC=3mVRMS T j=25 C V (V) R 1 4/7
STTH6L6TV Package mechanical data 2 Package mechanical data Epoxy meets UL94, V Cooling method: by conduction (C) Table 5. ISOTOP dimensions DIMENSIONS RE. Millimeters Inches Min. Max Min. Max. A 11.8 12.2.465.48 A1 8.9 9..35.358 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 E2 24.8 typ..976 typ. G 14.9 15..587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 4. 4.3.161.169 1 4.6 5..181.197 P 4. 4.3.157.69 P1 4. 4.4.157.173 S 3. 3.3 1.185 1.193 In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7
Ordering information STTH6L6TV 3 Ordering information Part Number Marking Package Weight Base qty Delivery mode STTH6L6TV1 STTH6L6TV1 ISOTOP STTH6L6TV2 STTH6L6TV2 ISOTOP 27 g (without screws) 27 g (without screws) (with screws) (with screws) Tube Tube 4 Revision history Date Revision Description of Changes 7-Sep-24 1 irst issue -Sep-24 2 13-Oct-26 3 Average forward current (page 1) and Junction to case (page 2) values changed Reformatted to current standard. Added part number STTH6L6TV2. 6/7
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