Phase Control Thyristors (Stud Version), 300 A TO-118 (TO- 209AE) PRIMARY CHARACTERISTICS I T(AV) 300 A 400 V, 800 V, 1200 V, 1600 V, V DRM /V RRM 1800 V, 2000 V V TM 1.28 V I GT 200 ma T J -40 C to +125 C Package TO-118 (TO-209AE) Circuit configuration Single SCR FEATURES Center amplifying gate International standard case TO-118 (TO-209AE) Hermetic metal case with ceramic insulator Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5 Compression bonded encapsulation for heavy duty operations such as severe thermal cycling Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS DC motor controls Controlled DC power supplies AC controllers T(AV) MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS T C 75 C I 300 A I T(RMS) 470 I TSM 60 Hz 8380 50 Hz 8000 A 50 Hz 320 I 2 t 60 Hz 292 ka 2 s V DRM /V RRM 400 to 2000 V t q Typical μs T J -40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST300S VOLTAGE CODE V DRM /V RRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 16 1600 1700 18 1800 1900 20 2000 2 I DRM /I RRM MAXIMUM AT T J = T J MAXIMUM ma 50 Revision: 27-Sep-17 1 Document Number: 94406
ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average on-state current 180 conduction, half sine wave 300 A I at case temperature T(AV) 75 C Maximum RMS on-state current I T(RMS) DC at 64 C case temperature 470 t = 10 ms No voltage 8000 Maximum peak, one-cycle t = 8.3 ms reapplied 8380 A I non-repetitive surge current TSM t = 10 ms % V 6730 RRM t = 8.3 ms reapplied Sinusoidal half wave, 7040 t = 10 ms No voltage initial T J = T J maximum 320 t = 8.3 ms reapplied 292 Maximum I 2 t for fusing I 2 t ka 2 s t = 10 ms % V 226 RRM t = 8.3 ms reapplied 207 Maximum I 2 t for fusing I 2 t t = 0.1 ms to 10 ms, no voltage reapplied 3200 ka 2 s Low level value of threshold voltage V T(TO)1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.97 High level value of threshold voltage V T(TO)2 (I > x I T(AV) ), T J = T J maximum 0.98 V Low level value of on-state slope resistance r t1 (16.7 % x x I T(AV) < I < x I T(AV) ), T J = T J maximum 0.74 High level value of on-state slope resistance r t2 (I > x I T(AV) ), T J = T J maximum 0.73 m Maximum on-state voltage V TM I pk = 940 A, T J = T J maximum, t p = 10 ms sine pulse 1.66 V Maximum holding current I H 600 T J = 25 C, anode supply 12 V resistive load Typical latching current I L 0 ma SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum non-repetitive rate of rise of turned-on current di/dt Gate drive 20 V, 20, t r 1 μs T J = T J maximum, anode voltage 80 % V DRM 0 A/μs Typical delay time t d Gate current 1 A, di g /dt = 1 A/μs V d = 0.67 % V DRM, T J = 25 C Typical turn-off time t q I TM = 550 A, T J = T J maximum, di/dt = 40 A/μs, V R = 50 V, dv/dt = 20 V/μs, gate 0 V, t p = 500 μs 1.0 μs BLOCKING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum critical rate of rise of off-state voltage dv/dt T J = T J maximum linear to 80 % rated V DRM 500 V/μs Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied 30 ma Revision: 27-Sep-17 2 Document Number: 94406
DC gate current required to trigger I GT TRIGGERING VALUES PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS Maximum peak gate power P GM T J = T J maximum, t p 5 ms 10.0 Maximum average gate power P G(AV) T J = T J maximum, f = 50 Hz, d% = 50 2.0 W Maximum peak positive gate current I GM T J = T J maximum, t p 5 ms 3.0 A Maximum peak positive gate voltage + V GM 20 T J = T J maximum, t p 5 ms Maximum peak negative gate voltage - V GM 5.0 V T J = 25 C 200 ma T J = -40 C 200 - T J = 125 C Maximum required gate trigger/ current/voltage are the lowest 50 - T J = -40 C value which will trigger all units 12 V anode to cathode applied 2.5 - DC gate voltage required to trigger V GT T J = 25 C 1.8 3 V T J = 125 C 1.1 - DC gate current not to trigger I Maximum gate current/voltage GD 10 ma not to trigger is the maximum T J = T J maximum value which will not trigger any unit with rated V DRM anode to DC gate voltage not to trigger V GD cathode applied 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum operating junction temperature range T J -40 to 125 Maximum storage temperature range T Stg -40 to 150 C Maximum thermal resistance, junction to case R thjc DC operation 0.10 Maximum thermal resistance, case to heatsink R thcs Mounting surface, smooth, flat and greased 0.03 K/W Mounting torque, ± 10 % Non-lubricated threads 48.5 (425) N m (lbf in) Approximate weight 535 g Case style See dimensions - link at the end of datasheet TO-118 (TO-209AE) R thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 60 0.025 0.026 30 0.041 0.042 T J = T J maximum Note The table above shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Revision: 27-Sep-17 3 Document Number: 94406
Maximum Allowable Case Temperature ( C) 130 R (DC) = 0.10 K/ W thjc 120 110 Conduction Angle 30 90 60 90 120 80 180 70 0 50 150 200 250 300 350 Average On-state Current (A) Maximum Allowable Case Temperature ( C) 130 120 110 90 R thjc (DC) = 0.10 K/W Conduction Period 80 30 60 70 90 120 180 DC 60 0 200 300 400 500 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 480 440 180 120 400 90 360 60 320 30 280 RMS Limit 240 200 160 Conduction Angle 120 80 ST300S Series 40 T J = 125 C 0 0 40 80 120 160 200 240 280 320 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) 0.08 K/ W 0.12 K/ W 0.2 K/ W 0.3 K/ W 0.4 K/W 0.6 K/ W 1.2 K/ W R = 0.03 K/ W - Delta R thsa Fig. 3 - On-State Power Loss Characteristics Maximum Average On-state Power Loss (W) 650 600 DC 180 550 120 500 90 450 60 400 30 350 300 RMS Lim it 250 Conduction Period 200 150 ST300S Series T J = 125 C 50 0 0 200 300 400 500 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) R = 0.03 K/ W - Delta R thsa 0.08 K/ W 0.12 K/ W 0.2 K/ W 0.3 K/W 0.6 K/W 1.2 K/ W Fig. 4 - On-State Power Loss Characteristics Revision: 27-Sep-17 4 Document Number: 94406
Pea k Half Sine Wave On-state Current (A) 7500 7000 6500 6000 5500 5000 4500 4000 3500 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 3000 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) 8500 8000 7500 7000 6500 6000 5500 5000 4500 4000 3500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 125 C No Voltage Reapplied Rated V RRM Reapplied ST300S Series 3000 0.01 0.1 1 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current 00 Instantaneous On-state Current (A) 0 T = 25 C J T = 125 C J 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thjc (K/ W) 1 Steady State Value R thjc = 0.10 K/ W (DC Operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristics Revision: 27-Sep-17 5 Document Number: 94406
Instantaneous Gate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (b) Tj=125 C Tj=25 C Tj=-40 C VGD IGD 0.1 Device: ST300S Series Frequency Limited by PG(AV) 0.001 0.01 0.1 1 10 (a) Instantaneous Gate Current (A) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (1) (2) (3) (4) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 30 0 S 20 P 0 - PbF 1 2 3 4 5 6 7 8 9 10 1 - product 2 - Thyristor 3 - Essential part number 4-0 = Converter grade 5 - S = Compression bonding stud 6 - Voltage code x = V RRM (see Voltage Ratings table) 7 - P = stud base 3/4" 16UNF-2A threads 8 - M = stud base metric threads (M24 x 1.5) 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 3 = Threaded top terminal 3/8" 24UNF-2A 9 - Critical dv/dt: None = 500 V/µs (standard value) L = 0 V/µs (special selection) 10 - None = Standard production - PbF = Lead (Pb)-free Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95084 Revision: 27-Sep-17 6 Document Number: 94406
Outline Dimensions TO-209AE (TO-118) DIMENSIONS - TO-209AE (TO-118) in millimeters (inches) 245 (9.65) 255 (10.04) 27.5 (1.08) MAX. Ceramic housing Red silicon rubber 38 (1.50) MAX. DIA. Red shrink 22 (0.87) MAX. 49 (1.92) MAX. 10.5 (0.41) NOM. 4.3 (0.17) DIA. Red cathode White shrink SW 45 21 (0.82) MAX. 3/4"16 UNF-2A (1) 47 (1.85) MAX. White gate 245 (9.65) ± 10 (0.39) Flexible leads C.S. 50 mm 2 (0.078 s.i.) 4.5 (0.18) MAX. Fast-on terminals AMP. 280000-1 REF-250 9.5 (0.37) MIN. 22 (0.86) MIN. Note (1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum DIMENSIONS - TO-209AE (TO-118) WITH TOP THREAD TERMINAL 3/8" in millimeters (inches) Ceramic housing 17 (0.67) DIA. 3/8"-24UNF-2A 77.5 (3.05) 80.5 (3.17) 27.5 (1.08) MAX. 25 (0.98) 38 (1.5) DIA. MAX. 21 (0.83) MAX. SW 45 47 (1.85) MAX. Note (1) For metric device: M24 x 1.5 - length screw 21 (0.83) maximum 3/4"-16UNF-2A (1) Document Number: 95084 For technical questions, contact: indmodules@vishay.com www.vishay.com Revision: 02-Aug-07 1
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 90