NJGHA UHF BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION NJGHA is a low noise amplifier GaAs MMIC designed for mobile digital TV application (~ MHz). This IC features good gain flatness, and low gain characteristic in out-of-band. This IC achieves low current consumption, low noise figure and low distortion. Also, this IC is integrated the ESD protection circuit. An ultra-small and ultra-thin package of USB-A is adopted. PACKAGE OUTLINE NJGHA APPLICATIONS Wide band application from MHz to MHz Mobile TV and Digital TV applications Mobile phone and tablet PC applications FEATURES Wide operating frequency range Low voltage operation Low current consumption Gain Low noise figure High P-dB(IN) High Input IP Ultra-small & ultra-thin package ~MHz +.V typ..ma typ..db typ..db typ. -.dbm typ. +.dbm typ. USB-A (Package size: mm x.mm x.mm typ.) PIN CONFIGURATION (Top View) VG RFOUT Pin INDEX Bias Circuit Pin Connection.. RFIN... RFOUT. VG RFIN Note: Specifications and description listed in this catalog are subject to change without notice. Ver.-- - -
NJGHA ABSOLUTE MAXIMUM RATINGS T a =+ C, Z s =Z l = ohm PARAMETER SYMBOL CONDITIONS RATINGS UNITS Drain Voltage V DD VDD terminal V Input power P IN V DD =.V + dbm Power dissipation P D On PCB board, Tjmax= C mw Operating temperature T opr -~+ C Storage temperature T stg -~+ C ELECTRICAL CHARACTERISTICS (DC) General conditions: V DD =.V, T a =+ C, Z s =Z l = ohm, with application circuit. PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating voltage V DD... V Operating Current I DD RF OFF -.. ma ELECTRICAL CHARACTERISTICS (RF) General conditions: V DD =.V, f RF =~MHz, T a =+ C, Z s =Z l = ohm, with application circuit. PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS Operating Frequency f RF MHz Small signal gain Gain... db Gain flatness G flat -.. db Noise figure Input power at db gain compression point Input rd order intercept point NF Exclude PCB & connector losses (.db) -.. db P -db(in) -. -. - dbm IIP f=f RF, f=f RF +khz, Pin=-dBm +. +. - dbm RF IN VSWR VSWRi -.. RF OUT VSWR VSWRo -.9. - -
NJGHA TERMINAL INFORMATION No. SYMBOL DESCRIPTION Ground terminal. RFIN RF input terminal. This terminal requires the DC-blocking capacitor and the DC-feed Inductor as shown in the application circuit. Ground terminal. Ground terminal. RFOUT RF output terminal. This terminal requires the external matching circuit as shown in the application circuit. VG Power supply pin of the bias circuit. Please supply the voltage as same as the LNA voltage. CAUTION ) Ground terminals (pin, pin and pin) should be connected with the ground plane close as possible. - -
NJGHA ELECTRICAL CHARACTERISTICS (Conditions: T a =+ C, VDD=.V, Z s =Z l = ohm, with application circuit.) Pout vs. Pin (frf=mhz) Gain, IDD vs. Pin (frf=mhz) Pout (dbm) - - - - Pout Gain (db) 9 Gain IDD IDD (ma) - - P-dB(IN)=-.dBm - - - - - - - - - Pin (dbm) P-dB(IN)=-.dBm - - - - - - - - Pin (dbm) Pout, IM vs. Pin (f=mhz, f=.mhz) Gain, NF vs. Frequency Pout, IM (dbm) - Pout - - - IM IIP=+.dBm - - - - - Pin (dbm) Gain (db). Gain 9.. NF. Frequency (MHz) NF (db) P-dB(IN) vs. Frequency IIP, OIP vs. Frequency (f=frequency, f=frequency+.mhz, Pin=-dBm) OIP P-dB(IN) (dbm) - - P-dB(IN) IIP, OIP (dbm) IIP - Frequency (MHz) Frequency (MHz) - -
NJGHA ELECTRICAL CHARACTERISTICS (Conditions: T a =+ C, VDD=.V, Z s =Z l = ohm, with application circuit.) K-factor vs. Frequency Gain, NF vs. VDD (frf=mhz) Gain K-factor Gain (db) NF (db) NF Frequency (MHz) VDD (V) P-dB(IN) vs. VDD (frf=mhz) IIP, OIP vs. VDD (f=mhz, f=.mhz, Pin=-dBm) P-dB(IN) (dbm) - P-dB(IN) IIP, OIP (dbm) OIP - IIP - VDD (V) - VDD (V) IDD vs. VDD (RF OFF) VSWR vs. VDD (frf=~mhz) IDD (ma) IDD VSWRi(max.), VSWRo(max.) VSWRi(max.) VSWRo(max.) VDD (V) VDD (V) - -
NJGHA ELECTRICAL CHARACTERISTICS (Conditions: VDD=.V, Z s =Z l = ohm, with application circuit.) Gain, NF vs. Temp. (frf=mhz) P-dB(IN) vs. Temp. (frf=mhz) Gain Gain (db) NF (db) P-dB(IN) (dbm) - P-dB(IN) NF - - Temperature (C o ) - - Temperature (C o ) IIP, OIP vs. Temp. (f=mhz, f=.mhz, Pin=-dBm) IDD vs. Temp. (RF OFF) IIP, OIP (dbm) OIP IIP IDD (ma) IDD - Temperature (C o ) - Temperature (C o ) VSWR vs. Temp. (frf=~mhz) VSWRi(max.), VSWRo(max.) VSWRo(max.) VSWRi(max.) - Temperature (C o ) - -
NJGHA ELECTRICAL CHARACTERISTICS (Conditions: T a =+ C, VDD=.V, Z s =Z l = ohm, with application circuit.) S, S S, S VSWR Zin, Zout S, S (~GHz) S, S (~GHz) - -
NJGHA TEST CIRCUIT C pf V DD =.V VG RFOUT L nh RFOUT Bias Circuit L nh C pf RFIN C pf L nh RFIN TEST PCB LAYOUT Parts List Parts ID Notes C L V DD L~L C~C MURATA (LQPT series) MURATA (GRM series) RF IN L C C L RF OUT PCB (FR-): t=.mm MICROSTRIP LINE WIDTH=.mm (Z = ohm) PCB SIZE=.mmx.mm PRECAUTIONS [] C is a DC-Blocking capacitor, and L is a DC-feed inductor. [] L, L, and C formed the output matching circuit. [] C is a bypass capacitor. [] Ground terminals (pin, pin and pin) should be connected with ground plane as close as possible in order to limit ground path induction. [] All external parts are placed as close as possible to the IC. - -
NJGHA MEASUREMENT BLOCK DIAGRAM V =.V VDD=.9V RF Input DUT RF Output Port Port Network Analyzer S parameter Measurement Block Diagram V DD =.V VDD=.9V RF Input DUT RF Output Noise Source N.S. Output Input NF Analyzer Meter Noise Figure Measurement Block Diagram freq db Attenuator V DD =.V Signal Generator RF Input DUT RF Output Spectrum Analyzer Signal Generator freq db Attenuator Power Comb. IF and IM Measurement Block Diagram for IIP - 9 -
NJGHA PACKAGE OUTLINE (USB-A).±. +..-.9. S S TERMINAL TREAT :Au Substrate :FR Molding material :Epoxy resin UNIT :mm WEIGHT :.mg. (MIN.).±. C. R..±....±...±. Photo resist coating..±..±. Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. Do NOT eat or put into mouth. Do NOT dispose in fire or break up this product. Do NOT chemically make gas or powder with this product. To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - -