17V 1A IGB Module MG171S-BN4MM RoHS Features IGB 3 CHIP(17V rench+field Stop technology) Low turn-off losses, short tail current (sat) with positive temperature coefficient DIODE CHIP(17V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Applications Agency Approvals AGENCY AGENCY FILE NUMBER E71639 High frequency switching application Medical applications Motion/servo control UPS systems Module Characteristics ( C Symbol Parameters est Conditions Min yp Max Unit max) Max. Junction emperature 15 C op Operating emperature -4 125 C stg Storage emperature -4 125 C V isol Insulation est Voltage AC, t=1min 4 V Comparative racking Index 35 orque Module-to-Sink Recommended (M6) 3 5 N m orque Module Electrodes Recommended (M5) 2.5 5 N m Weight 16 g Absolute Maximum Ratings ( C Symbol Parameters est Conditions Values Unit IGB S Collector - Emitter Voltage =25 C 17 V V GES Gate - Emitter Voltage ±2 V DC Collector Current C =25 C 15 A C =8 C 1 A M Repetitive Peak Collector Current t P =1ms 2 A P tot Power Dissipation Per IGB 62 W V RRM Repetitive Reverse Voltage =25 C 17 V I F(AV) C =25 C 15 A Average Forward Current C =8 C 1 A I FRM Repetitive Peak Forward Current t P =1ms 2 A I 2 t =125 C, t=1ms, V R =V 18 A 2 S Life Support Note: Not Intended for Use in Life Support or Life Saving Applications he products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG171S-BN4MM 31 1 215 Littelfuse, Inc Revised:5/19/15
17V 1A IGB Module Electrical and hermal Specifications ( C Symbol Parameters est Conditions Min yp Max Unit IGB V GE(th) Gate - Emitter hreshold Voltage =V GE, =4.mA 5.2 5.8 6.4 V (sat) Collector - Emitter =1A, V GE =15V, =25 C 2. 2.45 V Saturation Voltage =1A, V GE =15V, =125 C 2.4 V ES Collector Leakage Current =17V, V GE =V, =25 C 3 ma =17V, V GE =V, =125 C 2 ma I GES Gate Leakage Current =V,V GE =±2V, =125 C -4 4 na R Gint Intergrated Gate Resistor 7.5 Ω Q ge Gate Charge =9V, =1A, V GE =±15V 1.2 μc C ies Input Capacitance 9 nf =25V, V GE =V, f =1MHz C res Reverse ransfer Capacitance.29 nf t d(on) urn - on Delay ime =25 C 37 ns =125 C 4 ns t r Rise ime V CC =9V =25 C 4 ns =125 C 5 ns =1A t d(off) urn - off Delay ime J =25 C 65 ns =125 C 8 ns R G =4Ω t f Fall ime J =25 C 18 ns V GE =±15V =125 C 3 ns urn - on Energy Inductive Load =25 C 22 mj =125 C 32 mj urn - off Energy =25 C 21.5 mj =125 C 32.5 mj I SC Short Circuit Current t psc 1μS, V GE =15V; =125 C,V CC =1V 4 A R thjc Junction-to-Case hermal Resistance (Per IGB).2 K/W V F Forward Voltage I F =1A, V GE =V, =25 C 1.8 2.2 V I F =1A, V GE =V, =125 C 1.9 V I RRM Max. Reverse Recovery Current I F =1A, V R =9V 165 A Q rr Reverse Recovery Charge di F /dt=-245a/μs 48.5 μc E rec Reverse Recovery Energy =125 C 27.5 mj R thjcd Junction-to-Case hermal Resistance (Per ).36 K/W MG171S-BN4MM 32 2 215 Littelfuse, Inc Revised:5/19/15
17V 1A IGB Module Figure 1: ypical Output Characteristics Figure 2: ypical Output Characteristics 2 2 16 12 V GE =15V j =25 C 16 12 V GE =2V V GE =15V V GE =12V V GE =1V V GE = 9V V GE = 8V 8 8 4 4 1. 2. 3. 4. 1. 2. 3. 4. 5. Figure 3: ypical ransfer characteristics Figure 4: Switching Energy vs. Gate Resistor 2 16 =2V 1 8 =9V =1A 12 8 j =25 C Eon Eoff (mj) 6 4 4 2 5 6 7 8 9 1 11 12 V GE V 13 1 2 3 4 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area 1 8 =9V 25 2 Eon Eoff (mj) 6 4 2 15 1 5 25 5 75 1 125 A 15 175 2 2 6 1 14 18 MG171S-BN4MM 33 3 215 Littelfuse, Inc Revised:5/19/15
17V 1A IGB Module Figure 7: Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 2 16 45 35 I F=1A =9V IF (A) 12 8 Erec (mj) 25 15 4 j =25 C.5 1. 1.5 2. 2.5 V F V 3. 5 8 16 24 32 4 R G Ω Figure 9: Switching Energy vs. Forward Current Figure 1: ransient hermal Impedance of and IGB 4 3 =9V 1 Erec (mj) 2 ZthJC (K/W).1 IGB.1 1 4 8 12 16 I F (A) 2.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) MG171S-BN4MM 34 4 215 Littelfuse, Inc Revised:5/19/15
17V 1A IGB Module Dimensions-Package S Circuit Diagram Packing Options Part Number Marking Weight Packing Mode M.O.Q MG171S-BN4MM MG171S-BN4MM 16g Bulk Pack 5 Part Numbering System Part Marking System MG171 S - B N4 MM PRODUC YPE M: Power Module MODULE YPE G: IGB VOLAGE RAING 17: 17V ASSEMBLY SIE WAFER YPE CIRCUI YPE MG171S-BN4MM LO NUMBER Space reserved for QR code CURREN RAING PACKAGE YPE 1: 1A MG171S-BN4MM 35 5 215 Littelfuse, Inc Revised:5/19/15