Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor FEATURES High current capability High surge capability Industrial standard package 3 V RMS isolating voltage with non-toxic substrate Lead (Pb)-free Designed and qualified for industrial level RoHS COMPLIANT SUPER MAGN-A-PAK TM PRODUCT SUMMARY I T(AV) or I F(AV) 5 A TYPICAL APPLICATIONS Motor starters DC motor controls - AC motor controls Uninterruptable power supplies MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 5 A I T(AV) or I F(AV) T C 82 C 785 A I T(RMS) T C 82 C 5 Hz 17.8 I TSM or I FSM ka 6 Hz 18.7 5 Hz 1591 I 2 t 6 Hz 1452 ka 2 s I 2 t 15 91 ka 2 s V DRM /V RRM 8 to 16 V T Stg Range - 4 to 15 T J - 4 to 13 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VSK.5 VOLTAGE CODE V RRM /V DRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V V RSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 8 8 9 12 12 13 14 14 15 16 16 17 I RRM/ I DRM MAXIMUM AT T J = T J MAXIMUM ma Document Number: 9442 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 2-Mar-8 1
Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor ON-STATE CONDUCTION Maximum average on-state current I T(AV), 5 A conduction, half sine wave at case temperature I F(AV) 82 C Maximum RMS on-state current I T(RMS) conduction, half sine wave at T C = 82 C 785 A t = 1 ms No voltage 17.8 Maximum peak, one-cycle, I TSM, t = 8.3 ms reapplied 18.7 non-repetitive on-state surge current I FSM t = 1 ms % V RRM 15. ka t = 8.3 ms reapplied Sinusoidal 15.7 half wave, t = 1 ms No voltage initial T J = T J maximum 1591 t = 8.3 ms reapplied 1452 Maximum I 2 t for fusing I 2 t ka 2 s t = 1 ms % V RRM 1125 t = 8.3 ms reapplied 127 Maximum I 2 t for fusing I 2 t t =.1 to 1 ms, no voltage reapplied 15 91 ka 2 s Low level value or threshold voltage V T(TO)1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum.85 High level value of threshold voltage V T(TO)2 (I > π x I T(AV) ), T J = T J maximum.93 V Low level value on-state slope resistance r t1 (16.7 % x π x I T(AV) < I < π x I T(AV) ), T J = T J maximum.36 High level value on-state slope resistance r t2 (I > π x I T(AV) ), T J = T J maximum.32 mω Maximum on-state or forward voltage drop V TM V FM I pk = 15 A, T J = 25 C, t p = 1 ms sine pulse 1.5 V Maximum holding current I H 5 T J = 25 C, anode supply 12 V resistive load Maximum latching current I L ma SWITCHING Maximum rate of rise of turned-on current di/dt T J = T J maximum, I TM = 4 A, V DRM applied A/µs Gate current 1 A, di g /dt = 1 A/µs Typical delay time t d V d =.67 % V DRM, T J = 25 C 2. I TM = 75 A; T J = T J maximum, di/dt = - 6 A/µs, Typical turn-off time t q V R = 5 V, dv/dt = 2 V/µs, gate V Ω 2 µs BLOCKING Maximum critical rate of rise of off-state voltage dv/dt T J = 13 C, linear to V D = 8 % V DRM V/µs RMS insulation voltage V INS t = 1 s 3 V Maximum peak reverse and off-state leakage current I RRM, I DRM T J = T J maximum, rated V DRM /V RRM applied ma www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 9442 2 Revision: 2-Mar-8
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products TRIGGERING Maximum peak gate power P GM T J = T J maximum, t p 5 ms 1 Maximum peak average gate power P G(AV) T J = T J maximum, f = 5 Hz, d% = 5 2. W Maximum peak positive gate current +I GM 3. A Maximum peak positive gate voltage +V GM T J = T J maximum, t p 5 ms 2 Maximum peak negative gate voltage -V GM 5. V Maximum DC gate current required to trigger I GT 2 ma T J = 25 C, V ak 12 V DC gate voltage required to trigger V GT 3. V DC gate current not to trigger I GD T J = T J maximum 1 ma DC gate voltage not to trigger V GD.25 V THERMAL AND MECHANICAL SPECIFICATIONS Maximum junction operating T J - 4 to 13 temperature range C Maximum storage temperature range T Stg - 4 to 15 Maximum thermal resistance, R thjc DC operation.65 junction to case per junction K/W Maximum thermal resistance, R thc-hs.2 case to heatsink Mounting torque ± 1 % SMAP to heatsink A mounting compound is recommended and the 6-8 torque should be rechecked after a period of 3 busbar to SMAP hours to allow for the spread of the compound. 12-15 Nm Approximate weight 15 g Case style See dimensions - link at the end of datasheet SUPER MAGN-A-PAK ΔR thjc CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS.9.6.11.11 9.14.15 6.21.22 3.37.38 T J = T J maximum Note Table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC K/W Document Number: 9442 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 2-Mar-8 3
Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor Maximum Allowable Case Temperature ( C) 13 R thjc(dc) =.65 K/ W 12 11 Conduction Angle 9 3 8 6 9 7 6 2 3 4 5 6 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 9 8 7 6 DC 9 6 3 5 4 RMS Limit Conduction Period 3 2 T J = 13 C 2 3 4 5 6 7 8 Average On-state Current (A) Fig. 4 - On-State Power Loss Characteristics Maximum Allowable Case Temperature ( C) 13 12 11 9 R thjc(dc) =.65 K/ W Conduction Period 8 3 6 9 7 DC 6 2 3 4 5 6 7 8 9 Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Peak Half Sine Wave On-state Current (A) 16 15 14 13 12 1 9 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial T J= 13 C @ 6 Hz.83 s @ 5 Hz. s 8 7 1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 7 6 5 4 3 9 6 3 RMS Limit Conduction Angle 2 T J= 13 C 2 3 4 5 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 18 16 14 12 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J= 13 C No Voltage Reapplied Rated V RRMReapplied 8 Per Junc tion 6.1.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 9442 4 Revision: 2-Mar-8
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products Maximum Total On-state Power Loss (W) 75 7 65 6 55 5 45 4 35 3 25 2 15 5 Conduction Angle 9 6 3 Per Module T = 13 C J.16 K/W.2 K/W.3 K/W.4 K/W.6 K/W.12 K/W.9 K/W 2 3 4 5 6 7 8 2 4 6 8 12 Total RMS Output Current (A) Maximum Allowable Ambient Temperature ( C) Fig. 7 - On-State Power Loss Characteristics R =.7 K/W - Delta R thsa Maximum Total Power Loss (W) 3 25 2 15 (Sine) (Rect).2 K/W.3 K/W.5 K/W.8 K/W R =.1 K/W - Delta R 2 x Single Phase Bridge 5 Connected T = 13 C J 2 4 6 8 2 4 6 8 12 Total Output Current (A) Maximum Allowable Ambient Temperature ( C).12 K/W.2 K/W Fig. 8 - On-State Power Loss Characteristics thsa Maximum Total Power Loss (W) 45 4 35 3 25 2 15 5 (Rect) 3 x Three Phase Bridge Connected T = 13 C J R =.1 K/W - Delta R.2 K/W.3 K/W.5 K/ W.8K/W.2 K/ W 25 5 75 125 15 2 4 6 8 12 Total Output Current (A) Maximum Allowable Ambient Temperature ( C) thsa Fig. 9 - On-State Power Loss Characteristics Document Number: 9442 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 2-Mar-8 5
Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor Instantaneous On-state Current (A) T = 25 C J T = 13 C J.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Fig. 1 - On-State Voltage Drop Characteristics Tra nsie nt Thermal Impedance Z thjc (K/W).1.1 Steady State Value: R thjc =.65 K/ W (DC Operation).1.1.1.1 1 1 Square Wave Pulse Duration (s) Fig. 11 - Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 2V, 1ohms; tr<=1 µs b) Recommended load line for <=3% rated di/dt : 1V, 1ohms tr<=1 µs Tj=13 C Tj=25 C (b) Tj=-4 C 1 (1) (2) (3) (4) VGD IGD Frequency Limited by PG(AV).1.1.1.1 1 1 (a) Instantaneous Gate Current (A) Fig. 12 - Gate Characteristics (1) PGM = 1W, tp = 4ms (2) PGM = 2W, tp = 2ms (3) PGM = 4W, tp = 1ms (4) PGM = 6W, tp =.66ms www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 9442 6 Revision: 2-Mar-8
Thyristor/Diode and Thyristor/Thyristor Vishay High Power Products ORDERING INFORMATION TABLE Device code VSK T 5-16 PbF 1 2 3 4 5 1 - Module type 2 - Circuit configuration (see end of datasheet) 3 - Current rating 4 - Voltage code x = V RRM (see Voltage Ratings table) 5 - Lead (Pb)-free Note To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION VSKT 1 ~ VSKH 1 ~ VSKL 1 ~ + 2 + 2 + 2 3-3 - 3-4 (K1) 7 (K2) 4 (K1) 7 (K2) 5 (G1) 6 (G2) 5 (G1) 6 (G2) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95283 Document Number: 9442 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 2-Mar-8 7
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