Silicon NPN Planar RF Transistor Features High power gain Low noise figure High transition frequency Lead (Pb)-free component Component in accordance to RoHS 22/95/EC and WEEE 22/96/EC e3 3 2 1 2 E 3 1 B C Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Electrostatic sensitive device. Observe precautions for handling. 1939 Mechanical Data Case: TO-5 Plastic case Weight: approx. 111 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base Parts Table Part Ordering code Marking Remarks Package BFR91A BFR91AGELB-GS8 BFR91A Packed in Bulk TO-5(3) Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector-base voltage V CBO 2 V Collector-emitter voltage V CEO 12 V Emitter-base voltage V EBO 2 V Collector current I C 5 ma Total power dissipation T amb 6 C P tot 3 mw Junction temperature T j 15 C Storage temperature range T stg - 65 to + 15 C Maximum Thermal Resistance Parameter Test condition Symbol Value Unit Junction ambient 1) R thja 3 K/W 1) on glass fibre printed board (4 x 25 x 1.5) mm 3 plated with 35 μm Cu 1
Electrical DC Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter cut-off current V CE = 2 V, V BE = I CES 1 μa Collector-base cut-off current V CB = 2 V, I E = I CBO 1 na Emitter-base cut-off current V EB = 2 V, I C = I EBO 1 μa Collector-emitter breakdown I C = 1 ma, I B = V (BR)CEO 12 V voltage Collector-emitter saturation voltage I C = 5 ma, I B = 5 ma V CEsat.1.4 V DC forward current transfer ratio V CE = 5 V, I C = 3 ma h FE 4 9 15 Electrical AC Characteristics T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Transition frequency V CE = 5 V, I C = 3 ma, f T 6 GHz f = 5 MHz Collector-base capacitance V CB = 1 V, f = 1 MHz C cb.4 pf Collector-emitter capacitance V CB = 5 V, f = 1 MHz C ce.3 pf Emitter-base capacitance V EB =.5 V, f = 1 MHz C eb 1.5 pf Noise figure V CE = 8 V, Z S = 5 Ω, f = 8 MHz, I C = 5 ma F 1.6 db Power gain Linear output voltage - two tone intermodulation test Third order intercept point V CE = 8 V, Z S = 5 Ω, f = 8 MHz, I C = 3 ma V CE = 8 V, I C = 3 ma, Z S = 5 Ω, Z L = Z Lopt, f = 8 MHz V CE = 8 V, I C = 3 ma, d IM = 6 db, f 1 = 86 MHz, f 2 = 81 MH, Z S = Z L = 5 Ω V CE = 8 V, I C = 3 ma, f = 8 MHz F 2.3 db G pe 14 db V 1 = V 2 28 mv IP 3 32 dbm Common Emitter S-Parameters Z = 5 Ω, T amb = 25 C, unless otherwise specified V CE /V I C /ma f/mhz S11 S21 S12 S22 LIN ANG LIN ANG LIN ANG LIN ANG deg deg deg deg 8 2 1.92-22.1 6.38 162.8.2 78.4.9-8.1 3.78-61.3 5.42 134.7.5 61.5.88-2.8 5.64-92.7 4.38 114.3.7 52.8.79-28.2 8.51-128. 3.19 92.9.9 49.3.73-35.9 1.45-146.3 2.65 82.3.1 5.4.71-4.6 12.41-161.4 2.27 73.8.11 53.1.7-45.1 15.37 177.9 1.85 63..12 57.8.71-52.3 18.34 159.7 1.58 53.4.14 61.8.73-6. 2.32 149.7 1.44 48.5.16 63.8.74-64.9 8 5 1.79-31.8 13.51 153.5.2 75.1.92-13.4 2
V CE /V I C /ma f/mhz S11 S21 S12 S22 LIN ANG LIN ANG LIN ANG LIN ANG deg deg deg deg 3.54-78.6 9.24 119.9.4 61.9.73-26.4 5.4-17.8 6.44 11.9.6 61..64-31.1 8.3-138.4 4.3 85.7.9 63.7.59-36.3 1.27-153.8 3.5 77.8.1 65..58-41.3 12.25-167.2 2.98 71.1.12 65.7.58-45.8 15.22 175.1 2.41 62.4.14 66..59-53.2 18.21 157.8 2.6 54.2.18 65.3.61-6.6 2.2 149.4 1.88 49.7.19 64.5.62-65.5 8 1 1.63-43. 21.15 143.4.2 72.5.85-18.5 3.35-91.7 11.55 19.2.4 67.2.62-28. 5.25-117.7 7.47 95.1.6 69.5.55-3.6 8.2-145.2 4.85 82.1.9 71.1.53-36.4 1.18-16. 3.93 75.5.11 71.1.52-41.3 12.17-171.7 3.32 69.8.13 7.4.52-45.9 15.16 173.5 2.7 62..16 68.7.53-53.7 18.15 153.9 2.3 54.6.19 66.4.54-61.4 2.15 148.4 2.9 5.3.21 64.8.55-66.5 8 2 1.44-55.8 28.24 132.6.2 72.8.76-22.3 3.22-13.9 12.79 12..4 74.1.54-26.5 5.16-127.5 8. 9.7.6 75.8.5-28.6 8.14-153.3 5.13 79.8.9 75.4.49-35.2 1.13-165.9 4.15 73.9.11 74.2.48-4.4 12.12-177.3 3.51 68.7.13 72.9.49-45.5 15.12 17.1 2.84 61.5.17 7..5-53.6 18.12 152.3 2.42 54.4.2 67.1.51-61.6 2.11 147.1 2.21 5.6.22 65..52-66.7 8 3 1.34-64. 31.1 127.3.2 73.3.71-23.3 3.17-112.9 13.8 99.1.4 77.2.52-24.9 5.14-136.2 8.1 88.9.6 77.8.49-27.3 8.13-159.4 5.17 78.7.9 76.8.48-34.3 1.12-171.4 4.18 73..11 75.3.48-39.6 12.12 178.6 3.53 68..13 73.6.48-45. 15.12 165.7 2.87 61.1.17 7.5.49-53.3 18.11 147.8 2.44 54.2.2 67.4.5-61.3 2.11 143.7 2.23 5.3.22 65.4.51-66.6 3
Typical Characteristics (Tamb = 25 C unless otherwise specified) P tot - Total Power Dissipation ( mw ) 12845 4 35 3 25 2 15 1 5 2 4 6 8 1 12 14 16 T amb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature F - Noise Figure ( db ) 12897 3.5 3. 2.5 2. 1.5 1. V CE =8V.5 f = 8 MHz Z S =5 5 1 15 2 25 3 I C - Collector Current ( ma ) Figure 4. Noise Figure vs. Collector Current f - Transition Frequency ( MHz ) T 12895 7 6 5 4 3 2 1 V CE =5V f = 5 MHz 1 2 3 4 5 I C - Collector Current ( ma ) Figure 2. Transition Frequency vs. Collector Current C cb - Collector Base Capacitance ( pf ) 12896 1..8.6.4.2 f=1mhz 4 8 12 16 2 V CB - Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage 4
V CE = 1 V, I C = 1 ma, Z = 5 Ω S 11 S 12 j.5 j j2 12 9 2. GHz 6 1.5 j.2 j5 15.5 1. 3 2. GHz.2 1. 1 2 5 18.1.8.16.3 -j.2.1 -j5-15 -3 13 518 -j.5 -j2 -j Figure 5. Input Reflection Coefficient 13 519-12 -6-9 Figure 7. Reverse Transmission Coefficient S 21 S 22 12 9 6 j.5 j j2 15.1.3 3 j.2 j5 18-15 2. GHz 2 4-3 -j.2.2.5 1 2 5.3 1..1 2. GHz -j5 13 52-12 -6-9 Figure 6. Forward Transmission Coefficient -j.5 -j2 13 521 -j Figure 8. Output Reflection Coefficient 5
Package Dimensions in mm 96 12244 6
Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (199) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 199 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 91/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany 7