EPC4 EPC4 Enhancement Mode Power Transistor V DSS, V R DS(ON), 6 mw I D, A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last years. GaN s exceptionally high electron mobility and low temperature coefficient allows very low R DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low Q G and zero Q RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings V DS Drain-to-Source Voltage V Continuous (T A = C, θ JA = ) I D Pulsed ( C, t pulse = µs) Gate-to-Source Voltage 6 V GS Negative Gate-to-Source Voltage - T J Operating Temperature - to T STG Storage Temperature - to A V C EPC4 egan FETs are supplied only in passivated die form with solder bumps Applications High Speed DC-DC conversion Class D Audio Hard Switched and High Frequency Circuits Benefits Ultra High Efficiency Ultra Low R DS(on) Ultra low Q G Ultra small footprint PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T J = C unless otherwise stated) BV DSS Drain-to-Source Voltage V GS = V, I D = µa V I DSS Drain Source Leakage V DS = 3 V, V GS = V µa Gate-Source Forward Leakage V GS = V.4 I GSS Gate-Source Reverse Leakage V GS = - V.. ma V GS(TH) Gate Threshold Voltage V DS = V GS, I D = ma.7.4. V R DS(ON) Drain-Source On Resistance V GS = V, I D = A 6 mω Source-Drain Characteristics (T J = C unless otherwise stated) V SD I S =. A, V GS = V, T = C.3 Source-Drain Forward Voltage I S =. A, V GS = V, T = C.4 All measurements were done with substrate shorted to source. V Thermal Characteristics TYP R θjc Thermal Resistance, Junction to Case 6. C/W R θjb Thermal Resistance, Junction to Board 3 C/W R θja Thermal Resistance, Junction to Ambient (Note ) 8 C/W Note : R θja is determined with the device mounted on one square inch of copper pad, single layer oz copper on FR4 board. See http://epc-co.com/epc/documents/product-training/appnote_thermal_performance_of_egan_fets.pdf for details. EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT PAGE
EPC4 Dynamic Characteristics (T J = C unless otherwise stated) C ISS All measurements were done with substrate shorted to source. Input Capacitance 3 C OSS Output Capacitance V DS = V, V GS = V 7 pf C RSS Reverse Transfer Capacitance.. Q G Total Gate Charge V DS = V, V GS = V, I D = A.48.8 Q GD Gate to Drain Charge.48.6 Q GS Gate to Source Charge V DS = V, I D = A.67.8 nc Q OSS Output Charge 4.8 6 Q RR Source-Drain Recovery Charge C Capacitance (nf).3.3..... Figure : Capacitance C OSS = C GD + C SD C ISS = C GD + C GS C RSS = C GD VGS Gate to Source Voltage (V) 4 3 Figure 6: Gate Charge I D = A V D = V 3 V DS Drain to Source Voltage (V)... Q G Gate Charge (nc) ID Drain Current (A) 3 Figure : Typical Output Characteristics V GS = V GS = 4 V GS = 3 V GS = ID Drain Current (A) 3 Figure : Transfer Characteristics C C V DS = 3 V..4.6.8..4.6.8 V DS Drain to Source Voltage (V)... 3 3. 4 EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT PAGE
EPC4 RDS(ON) Drain to Source Resistance (mω) Figure 3: R DS(ON) vs. V GS for Various Drain Current I D = 4 A I D = 6 A I D = A I D = A RDS(ON) Drain to Source Resistance (mω) 7 6 Figure 4: R DS(ON) vs. V GS for Various Temperatures C C.. 3 3. 4 4.. 3 3. 4 4.. ISD Source to Drain Current (A) Figure 7: Reverse Drain-Source Characteristics C C V GS = V Normalized On-State Resistance RDS(ON)..8.6.4. Figure 8: Normalized On Resistance vs. Temperature I D = A V GS = V... 3 3. V SD Source to Drain Voltage (V).8-6 8 6 T Junction Temperature ( C ) J.6 Figure 9: Normalized Threshold Voltage vs. Temperature.3 Figure : Gate Current.4. C C Normalized Threshold Voltage..8.6.4 I D = ma IG Gate Current (A)..... - 6 8 6 T J Junction Temperature ( C ) 3 4 6 V GS Gate-to-Source Voltage (V) All measurements were done with substrate shortened to source. EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT PAGE 3
EPC4 Figure : Transient Thermal Response Curve ZθJB, Normalized Thermal Impedance Duty Factors:........ Normalized Maximum Transient Thermal Impedance P DM t.. Single Pulse Notes: Duty Factor: D = t /t Peak T J = P DM x Z θjb x R θjb + T B - -4-3 - - t t p, Rectangular Pulse Duration, seconds TAPE AND REEL CONFIGURATION 4mm pitch, 8mm wide tape on 7 reel b d e f g Loaded Tape Feed Direction 7 reel a c Die orientation dot Gate solder bar is under this corner EPC4 (note ) Dimension (mm) target min max a 8. 7.9 8. b.7.6.8 c (see note) 3. 3.4 3. d 4. 3.9 4. e 4. 3.9 4. f (see note)..9. g...6 Die is placed into pocket solder bar side down (face side down) Note : MSL (moisture sensitivity level ) classified according to IPC/JEDEC industry standard. Note : Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 4 Die orientation dot Gate Pad bump is under this corner YYYY ZZZZ Part Number Part # Marking Line Laser Markings Lot_Date Code Marking line Lot_Date Code Marking Line 3 EPC4 4 YYYY ZZZZ EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT PAGE 4
EPC4 DIE OUTLINE Solder Bar View c d X f A f X3 3 4 B DIM micrometers MIN Nominal MAX A 67 7 73 B 7 87 7 c 834 837 8 d 37 3 333 e 3 6 f 9 g Side View e g g X +/- (68) 8 Max SEATING PLANE RECOMMENDED LAND PATTERN (measurements in µm) The land pattern is solder mask defined Solder mask is um smaller per side than bump 7 7 3 4 87 3 4 87 X Pad no. is Gate Pad no. is Substrate Pad no. 3 and are Drain Pad no. 4 is Source 8 8 X3 Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. Information subject to change without notice. revised September EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT PAGE