BGA SiMMICAmpliier in SIEGET 5Technologie Cascadable 5 Ωgain block Unconditionally stable Gain S = at. GHz IP out = + m at. GHz (V D = V, I D = typ. 6.7 ma) Noise igure NF =. at. GHz V D Reverse isolation > and return loss IN / OUT > at. GHz Pbree (RoHS compliant) package OUT Circuit Diagram IN GND EHA75 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Coniguration Package BGA BLs, IN, GND, OUT, VD SOT Maximum Ratings Parameter Symbol Value Unit Device current I D 5 ma Device voltage V D 6 V Total power dissipation P tot 9 mw T S = C RF input power P RFin m Junction temperature T j 5 C Ambient temperature T A 65... 5 Storage temperature T stg 65... 5 Thermal Resistance Junction soldering point ) R thjs K/W For calculation o R thja please reer to Application Note Thermal Resistance 76
BGA Electrical Characteristics at T A = 5 C, unless otherwise speciied. Parameter Symbol Values Unit min. typ. max. AC characteristics V D = V, Z o = 5 Ω Device current I D 5. 6.7 ma Insertion power gain S =. GHz = GHz =. GHz 7 5 9 7 Reverse isolation S 5 =. GHz Noise igure NF =. GHz = GHz =. GHz.9....6.7 Intercept point at the output IP out m = GHz compression point P 6.5 = GHz Return loss input RL in =. GHz Return loss output =. GHz RL out 6 Typical biasing coniguration + V D pf RF OUT pf nf BGA RF IN pf GND EHA76 Note: ) Largevalue capacitors should be connected rom pin to ground right at the device to provide a low impedance path. ) The use o plated through holes right at pin is essential or pcboardapplications. Thin boards are recommended to minimize the parasitic inductance to ground. 76
BGA Typical SParameters at T A = 5 C S S S S GHz MAG ANG MAG ANG MAG ANG MAG ANG V D = V, Z o = 5 Ω..5..5..9..566.566..9...6.6.6.55.5 9..7.6 5.5 6.6 6. 6. 9.7.9 9..9 7.5 6.69 5..567.55.65.7.6 7.6 9. 5. 6.. 99.7 9.7 5..6..6...7.6.6.59.6.7.7 5.6 5.9 57. 6.5 66. 67. 7. 7...6.6..9.979..69...6. 6.7 9 5..5. 7.5 Spicemodel BGA BGA chip including parasitics +V T R T5.5kΩ R R R OUT R R C Ω.kΩ.pF C P.pF IN C P C C P T CP C P C P C P.pF.6pF C P.pF GND EHA77 76
BGA Transistor Chip Data T (BerkleySPICE G.6 Syntax) : IS =. A BF =. VAF = 9.5 V IKF =.69 A NE =.776 BR =.56 VAR =.6 V IKR =.55 A NC =.5 RB = 5 Ω RBM =.9 Ω RE =.99 CJE =.765 F VJE =.767 V TF =.599 ps XTF =.6 ITF =.6 ma PTF = deg VJC =.995 V MJC =.65 TR =.95 ns CJS = F MJS = XTB = XTI = FC =.9969 C'E'Diode Data (BerkleySPICE G.6 Syntax) : IS = A N =. All parameters are ready to use, no scaling is necessary Package Equivalent Circuit: IN C L BO C C CB L BI C BE L BGA Chip C E Diode L EI L EO GND L C L CI L CO +V OUT C CE EHA7 NF =.5 ISE = 5.76 A NR =.9667 ISC =.7 A IRB =.5 A RC =.69 Ω MJE =.777 VTF =.976 V CJC = 96.9 F XCJC =.6 VJS =.75 V EG =. ev TNOM K RS = Ω L BI =.6 nh L BO =. nh L EI =. nh L EO =.5 nh L CI =.6 nh L CO =. nh C BE = 95 F C CB = 6 F C CE = F C = F C = F C = F L =.6 nh L =. nh Valid up to GHz Extracted on behal o Inineon Technologies AG by: Institut ür Mobilund Satellitentechnik (IMST) For examples and ready to use parameters please contact your local Inineon Technologies distributor or sales oice to obtain a Inineon Technologies CDROM or see Internet: http://www.inineon.com/silicondiscretes 76
BGA Insertion power gain S = () V D, I D = parameter Insertion power gain S = () V D = V T A = parameter 5 VD=5V, ID=.mA VD=V, ID=9.mA VD=V, ID=6.mA VD=V, ID=,mA TA= C TA=+5 C TA=+75 C S 5 S 6 6 5 GHz GHz Noise igure NF = () V D,I D = parameter 5 Noise igure NF = () V D = V T A = parameter.5 VD=5V, ID=.mA VD=V, ID=6.mA.5 TA=+75 C TA=+5 C TA= C NF NF.5.5 GHz GHz 5 76
BGA Intercept point at the output IP out = () V D,I D = parameter Intercept point at the output IP out = (), V D = V T A = parameter IPout m 6 VD=5V, ID=.mA VD=V, ID=9.mA VD=V, ID=6.mA VD=V, ID=.mA IPout m 9 7 6 TA= C TA=+5 C TA=75 C 5 6 GHz GHz 6 76
Package SOT BGA Package Outline ±... MAX...9 ±. A. +..5 x. M.5 +..6.5. ±.. MIN.. M Foot Print.6 Marking Layout (Example) 5, June Date code (YM) BGA Type code Standard Packing Reel ø mm =. Pieces/Reel Reel ø mm =. Pieces/Reel...6. A.5 +..5.5 ±..5.9 Manuacturer Pin Pin.5. 7 76
BGA Edition 96 Published by Inineon Technologies AG 76 Munich, Germany 9 Inineon Technologies AG All Rights Reserved. Legal Disclaimer The inormation given in this document shall in no event be regarded as a guarantee o conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any inormation regarding the application o the device, Inineon Technologies hereby disclaims any and all warranties and liabilities o any kind, including without limitation, warranties o noninringement o intellectual property rights o any third party. Inormation For urther inormation on technology, delivery terms and conditions and prices, please contact the nearest Inineon Technologies Oice (<www.inineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For inormation on the types in question, please contact the nearest Inineon Technologies Oice. Inineon Technologies components may be used in liesupport devices or systems only with the express written approval o Inineon Technologies, i a ailure o such components can reasonably be expected to cause the ailure o that liesupport device or system or to aect the saety or eectiveness o that device or system. Lie support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human lie. I they ail, it is reasonable to assume that the health o the user or other persons may be endangered. 76