NEC's NPN SILICON TRANSISTOR
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1 NEC's NPN SILICON TRANSISTOR NE81M1 FEATURES OUTLINE DIMENSIONS (Units in mm) NEW MINIATURE M1 PACKAGE: Small transistor outline 1. X. X. mm Low profile /. mm package height Flat lead style for better RF performance ñ. PACKAGE OUTLINE M1.7± ñ. (Bottom View). IDEAL FOR GHz OSCILLATORS LOW PHASE NOISE LOW PUSHING FACTOR ñ E ñ. DESCRIPTION NEC's NE81M1 transistor is designed for oscillator applications up to GHz. The NE81M1 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M1" package is ideal for today's portable wireless applications ñ..± ñ... PIN CONNECTIONS 1. Emitter. Base. Collector ELECTRICAL CHARACTERISTICS (TA = C) PART NUMBER NE81M1 EIAJ 1 REGISTERED NUMBER SC81 PACKAGE OUTLINE M1 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ft Gain Bandwidth at, IC = ma, f = GHz GHz.. ft Gain Bandwidth at, IC = 1 ma, f = GHz GHz.. S1E Insertion Power Gain at, IC = ma, f = GHz db.. S1E Insertion Power Gain at, IC = 1 ma, f = GHz db.. NF Noise Figure at, IC = 1 ma, f = GHz db 1.9. CRE Reverse Transfer Capacitance at VCB =. V, IE = ma, f = 1 MHz pf..8 ICBO Collector Cutoff Current at VCB = V, IE = na IEBO Emitter Cutoff Current at VEB = 1 V, IC = na hfe DC Current Gain at, IC = ma Notes: 1. Electronic Industrial Association of Japan.. Pulsed measurement, pulse width µs, duty cycle %.. Collector to base capacitance when the emitter is grounded California Eastern Laboratories
2 NE81M1 ABSOLUTE MAXIMUM RATINGS 1 (TA = C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V. VEBO Emitter to Base Voltage V 1. IC Collector Current ma 1 PT Total Power Dissipation mw 1 TJ Junction Temperature C 1 TSTG Storage Temperature C - to +1 ORDERING INFORMATION PART NUMBER QUANTITY NE81M1-T-A 1 k pcs./reel Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.. With device mounted on 1.8 cm X 1. mm glass epoxy board. TYPICAL PERFORMANCE CURVES (TA = C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFR CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Total Power Dissipation, Ptot (mw) Mounted on Glass Epoxy PCB (1.8 cm 1.mm(t) ) Reverse Transfer Capacitance, Cre (pf) f = 1 MHz Ambient Temperature, TA ( C) Collector to Base Voltage, VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 1 VCE = V 8 1 µ A µ A µ A 8 µ A µ A µ A 1 µ A 1 µ A 8 µ A Base to Emitter Voltage, VBE (V) IB = µ A 1 7 Collector to Emitter Voltage, VCE (V)
3 NE81M1 TYPICAL PERFORMANCE CURVES (TA = C) GAIN BANDWIDTH PRODUCT GAIN BANDWIDTH PRODUCT Gain Bandwidth Product, ft (GHz) 1 f = GHz 8 Gain Bandwidth Product, ft (GHz) 1 8 VCE = V f = GHz INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY Insertion Power Gain, S1e (db) 1 1 IC = ma Insertion Power Gain, S1e (db) 1 1 VCE = V IC = ma Frequency, f (GHz) Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY INSERTION POWER GAIN vs. FREQUENCY Insertion Power Gain, S1e (db) 1 1 IC = 1 ma Insertion Power Gain, S1e (db) 1 1 VCE = V IC = 1 ma Frequency, f (GHz) Frequency, f (GHz)
4 NE81M1 TYPICAL PERFORMANCE CURVES (TA = C) INSERTION POWER GAIN,, MSG INSERTION POWER GAIN,, MSG Insertion Power Gain, S1e (db) Maximum Available Gain, (db) Maximum Stable Gain, MSG(dB) 1 1 MSG f = 1 GHz Insertion Power Gain, S1e (db) Maximum Available Gain, (db) Maximum Stable Gain, MSG(dB) S1e S1e 1 1 MSG VCE = V f = 1 GHz Insertion Power Gain, S1e (db) Maximum Available Gain, (db) INSERTION POWER GAIN and 1 f = GHz 1 S1e Insertion Power Gain, S1e (db) Maximum Available Gain, (db) 1 1 INSERTION POWER GAIN and VCE = V f = GHz S1e INSERTION POWER GAIN,, MSG INSERTION POWER GAIN,, MSG Insertion Power Gain, S1e (db) Maximum Available Gain, (db) Maximum Stable Gain, MSG(dB) 1 - f = GHz S1e MSG Insertion Power Gain, S1e (db) Maximum Available Gain, (db) Maximum Stable Gain, MSG(dB) 1 VCE = V f = GHz - S1e MSG
5 NE81M1 TYPICAL PERFORMANCE CURVES (TA = C) NOISE FIGURE and ASSOCIATED GAIN NOISE FIGURE and ASSOCIATED GAIN Noise Figure, NF (db) 1 f = 1 GHz Ga NF Associated Gain, Ga (db) Noise Figure, NF (db) 1 VCE = V f = 1 GHz Ga NF Associated Gain, Ga (db) Noise Figure, NF (db) NOISE FIGURE and ASSOCIATED GAIN 18 f = GHz 1 1 Ga NF 1 9 Associated Gain, Ga (db) Noise Figure, NF (db) 1 NOISE FIGURE and ASSOCIATED GAIN VCE = V f = GHz Ga NF Associated Gain, Ga (db) OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER VCE = V, f = 1 GHz Icq = ma (RF OFF) 8 7 VCE = V, f = GHz Icq = ma (RF OFF) 8 7 Output Power, POUT (dbm) Pout IC 1 Output Power, POUT (dbm) Pout IC Input Power, PIN (dbm) Input Power, PIN (dbm)
6 NE81M1 TYPICAL SCATTERING PARAMETERS (TA = C) j +9 j j1 +1 S1 S1 + j1 S j1 S -j -j j.1 to. GHz by to.ghz by. NE81M1 VC = 1 V, IC = ma FREQUENCY S11 S1 S1 S K 1 GHz ANG ANG ANG ANG (db) Note: 1. Gain Calculations: = S1 S1 (K ± When K 1, is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). = Maximum Available Gain MSG = Maximum Stable Gain
7 NE81M1 TYPICAL SCATTERING PARAMETERS (TA = C) j +9 j j1 +1 S1 S1 + j1 S j1 S -j -j j.1 to.ghz by to.ghz by. NE81M1 VC = V, IC = 1 ma FREQUENCY S11 S1 S1 S K 1 GHz ANG ANG ANG ANG (db) Note: 1. Gain Calculations: = S1 S1 (K ± When K 1, is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). = Maximum Available Gain MSG = Maximum Stable Gain
8 NE81M1 TYPICAL SCATTERING PARAMETERS (TA = C) j +9 j j1 +1 S1 S1 + j1 S j1 S -j -j j.1 to.ghz by to.ghz by. NE81M1 VC = V, IC = ma FREQUENCY S11 S1 S1 S K 1 GHz ANG ANG ANG ANG (db) Note: 1. Gain Calculations: = S1 S1 (K ± When K 1, is undefined and MSG values are used. MSG = S1, K = S11 - S, = S11 S - S1 S1 S1 S1 S1 K - 1 ). = Maximum Available Gain MSG = Maximum Stable Gain
9 NE81M1 NONLINEAR MODEL SCHEMATIC CCBPKG. pf Base LBPKG. nh LB. nh CCB.1 pf Q1 CCE. pf LCPKG. nh Collector LE. nh CCEPKG. pf LEPKG. nh Emitter BJT NONLINEAR MODEL PARAMETERS (1) Parameters Q1 Parameters Q1 IS 17e-18 MJC.1 BF 1 XCJC. NF.9871 CJS VAF. VJS.7 IKF MJS ISE 8.e-1 FC. NE. TF 1e-1 BR 8.7 XTF.1 NR.9889 VTF VAR.7 ITF. IKR.1 PTF ISC e-18 TR 1.e-9 NC 1.8 EG 1.11 RE. XTB RB XTI RBM 1 KF 17e-1 IRB AF 1. RC 1.7 CJE.e-1 VJE.87 MJE. CJC.e-1 VJC. ADDITIONAL PARAMETERS Parameters NE81M1 CCB.1 pf CCE. pf LB. nh LE. nh CCBPKG. pf CCEPKG. pf LBX. nh LCX. nh LEX. nh MODEL TEST CONDITIONS Frequency:.1 to. GHz Bias: to V, IC = 1 ma to ma Date: 9/1 (1) Gummel-Poon Model Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 1/7/ A Business Partner of NEC Compound Semiconductor Devices, Ltd.
10 9 Patrick Henry Drive Santa Clara, CA Telephone: (8) 919- Facsimile: (8) Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive /9/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive /11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix A indicates that the device is Pb-free. The AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Lead (Pb) Concentration Limit per RoHS (values are not yet fixed) < 1 PPM Concentration contained in CEL devices -A -AZ Not Detected (*) Mercury < 1 PPM Not Detected Cadmium < 1 PPM Not Detected Hexavalent Chromium < 1 PPM Not Detected PBB < 1 PPM Not Detected PBDE < 1 PPM Not Detected If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. CEL has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. CEL and CEL suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall CEL s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. See CEL Terms and Conditions for additional clarification of warranties and liability.
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