POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q g. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. Lower Input Capacitance Lower Miller Capacitance Lower Gate Charge, Qg MAXIMUM RATINGS FREDFET Increased Power Dissipation Easier To Drive Popular T-MAX or TO-264 Package FAST RECOVERY BODY DIODE APT3M3B2FLL APT3M3LFLL 3V A.3Ω B2FLL T-MAX TO-264 All Ratings: T C = 25 C unless otherwise specified. G LFLL D S Symbol Parameter APT3M3B2FLL_LFLL S -Source Voltage 3 M Continuous Current 5 @ T C = 25 C Pulsed Current 1 4 M Gate-Source Voltage Continuous Gate-Source Voltage Transient ±3 ±4 P D Total Power Dissipation @ T C = 25 C Linear Derating Factor 694 5.56 Watts W/ C,T STG T L Operating and Storage Junction Temperature Range Lead Temperature:.63" from Case for 1 Sec. -55 to 15 3 C I AR Avalanche Current 1 (Repetitive and Non-Repetitive) E AR E AS Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 5 3 mj STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions BS -Source Breakdown Voltage ( = V, = 25µA) 3 R DS(on) -Source On-State Resistance 2 ( = 1V, = 5A) SS I GSS (th) Zero Gate Voltage Current ( = 3V, = V) Zero Gate Voltage Current ( = 24V, = V, T C = 125 C) Gate-Source Leakage Current ( = ±3V, = V) Gate Threshold Voltage ( =, = 2.5mA).3 25 ± 3 5 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms µa na 5-7162 Rev B 7-24
DYNAMIC CHARACTERISTICS Symbol Characteristic C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Q g Total Gate Charge 3 Q gs Gate-Source Charge Q gd Gate- ("Miller") Charge t d(on) Turn-on Delay Time t r Rise Time t d(off) Turn-off Delay Time t f Fall Time Turn-on Switching Energy 7 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions I S Continuous Source Current (Body Diode) I SM Pulsed Source Current 1 (Body Diode) V SD Diode Forward Voltage 2 ( = V, I S = -A) Peak Diode Recovery dv / 6 dt dv / dt t rr Q rr I RRM Reverse Recovery Time (I S = -A, di / dt = A/µs) Reverse Recovery Charge (I S = -A, di / dt = A/µs) Peak Recovery Current (I S = -A, di / dt = A/µs) THERMAL CHARACTERISTICS Symbol Characteristic R θjc Junction to Case Junction to Ambient R θja Turn-off Switching Energy Turn-on Switching Energy 7 Turn-off Switching Energy 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 3 µs, Duty Cycle < 2% 3 See MIL-STD-75 Method 3471 Test Conditions = V = 25V f = 1 MHz = 1V = A @ 25 C RESISTIVE SWITCHING = A @ 25 C R G =.6Ω INDUCTIVE SWITCHING @ 25 C = 2V, = A, R G = 5Ω INDUCTIVE SWITCHING @ 125 C = 2V = A, R G = 5Ω APT Reserves the right to change, without notice, the specifications and inforation contained herein..2 APT3M3B2FLL_LFLL 73 195 11 14 41 7 15 22 35 925 1345 155 145 415 1.3 T j = 25 C 25 T j = 125 C 5 T j = 25 C 1.4 T j = 125 C 4.9 T j = 25 C 14 T j = 125 C 25.1 4 V/ns ns µc C/W 4 Starting T j = +25 C, L =.6mH, R G = 25Ω, Peak I L = A 5 The maximum current is limited by lead temperature 6 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. I S - A di / dt 7A/µs V R 3V 15 C 7 Eon includes diode reverse recovery. See figures 1, 2. pf nc ns µj 5-7162 Rev B 7-24 Z θjc, THERMAL IMPEDANCE ( C/W).1.16.14.12.1..6.4.2.9.7.5.3.1.5 SINGLE PULSE Note: P DM t 1 t 2 Duty Factor D = t 1/t 2 Peak = P DM x Z θjc + T C 1-5 1-4 1-3 1-2 1-1 1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves Junction temp. ( C) R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Power (Watts) Case temperature FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 25 2 15 5 > (ON) x R DS(ON) MAX. 25µSEC. PULSE TEST @ <.5 % DUTY CYCLE = +25 C = +125 C = -55 C (TH), THRESHOLD VOLTAGE BS, DRAIN-TO-SOURCE BREAKDOWN R DS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) VOLTAGE (NORMALIZED) =15 &1V V 7.5V =1V APT3M3B2FLL_LFLL 7V 6.5 =2V 6V 5.5V 5 1 15 2 25 3 FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 2 4 6 1. 2 4 6 12 14 16 1, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, R DS(ON) vs DRAIN CURRENT 12 1.15 6 4 2 25 5 75 125 15.9-5 -25 25 5 75 125 15 T C, CASE TEMPERATURE ( C), JUNCTION TEMPERATURE ( C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 2.5 2. 1.5 1..5 I = 5A D V = 1 RC MODEL.271.656.59.99F.22F.293F NORMALIZED TO = 1V @ = 5A. -5-25 25 5 75 125 15.6-5 -25 25 5 75 125 15, JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE, R DS(ON) vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 25 2 15 5 1.4 1.3 1.2 1.1 1..9 1.1 1.5 1..95 1.2 1.1 1..9..7 5-7162 Rev B 7-24
5-7162 Rev B 7-24, GATE-TO-SOURCE VOLTAGE (VOLTS) SWITCHING ENERGY (µj) t d(on) and t d(off) (ns) 4 OPERATION HERE LIMITED BY R DS (ON) µs APT3M3B2FLL_LFLL 1 1mS Crss T C =+25 C 1mS =+15 C SINGLE PULSE 1 1 1 3 1 1 2 3 4 5 FIGURE 1, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 16 12 4 = A =6V =15V =24V 5 15 2 25 1.3.5.7.9 1.1 1.3 1.5 Q g, TOTAL GATE CHARGE (nc) V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 12 6 4 2 35 3 25 2 15 V = 3V L = µh t d(off) t d(on) R, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pf) 2, 1, 1, 3 1 V = 2V L = µh =+15 C =+25 C 4 6 12 14 16 4 6 12 14 16 (A) (A) FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT 5 V = 2V L = µh E ON includes diode reverse recovery. 4 6 12 14 16 5 1 15 2 25 3 35 4 45 5 (A) R G, GATE RESISTANCE (Ohms) FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE SWITCHING ENERGY (µj) t r and t f (ns) 2 1 16 14 12 6 4 2 5 4 3 2 V = 2V I = A D L = µh E ON includes diode reverse recovery. t f t r Ciss Coss
Typical Performance Curves APT3M3B2FLL_LFLL 9% 1% Gate Voltage 125 C Gate Voltage 125 C t d(off) t d(on) t r t f Voltage 9% Current 9% 5% 1% 5% Voltage 1% Switching Energy Switching Energy Current Figure 1, Turn-on Switching Waveforms and Definitions Figure 19, Turn-off Switching Waveforms and Definitions APT6DS3 G D.U.T. Figure 2, Inductive Switching Test Circuit T-MAX TM (B2) Package Outline TO-264 (L) Package Outline 4.69 (.15) 5.31 (.29) 1.49 (.59) 2.49 (.9) 15.49 (.61) 16.26 (.64) 5.3 (.212) 6.2 (.244) 4.6 (.11) 5.21 (.25) 1. (.71) 2.1 (.79) 19.51 (.76) 2.5 (.7) 3.1 (.122) 3.4 (.137) 2. (.19) 21.46 (.45) 25.4 (1.3) 26.49 (1.43) 5.79 (.22) 6.2 (.244).4 (.16).79 (.31) 4.5 (.177) Max. 19.1 (.7) 2.32 (.) 1.1 (.4) 1.4 (.55) 2.7 (.113) 3.12 (.123) 1.65 (.65) 2.13 (.4) Gate Source 2.29 (.9) 2.69 (.16) 19.1 (.7) 21.39 (.42).4 (.19).76 (.3).4 (.33) 1.3 (.51) 2.21 (.7) 2.59 (.12) 2.79 (.11) 2.59 (.12) 5.45 (.215) BSC 3. (.11) 3.1 (.125) 2-Plcs. 5.45 (.215) BSC These dimensions are equal to the TO-247 without the mounting hole. 2-Plcs. Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches) APT s products are covered by one or more of U.S.patents 4,95,1 5,45,93 5,9,434 5,12,234 5,19,522 5,262,336 6,53,76 5,256,53 4,74,13 5,23,22 5,231,474 5,434,95 5,52,5 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.9) 2.69 (.16) Gate Source 5-7162 Rev B 7-24