INSULATED GATE BIPOLAR TRANSISTOR PD - 9587 IRG4PH40UPbF Ultra Fast Speed IGBT Features UltraFast: Optimized fr high perating frequencies up t 40 khz in hard switching, >200 khz in resnant mde New IGBT design prvides tighter parameter distributin and higher efficiency than previus generatins Optimized fr pwer cnversin; SMPS, UPS and welding Industry standard TO-247AC package Lead-Free G C E n-channel V CES = 200V V CE(n) typ. = 2.43V @, I C = 2A Benefits Higher switching frequency capability than cmpetitive IGBTs Highest efficiency available Much lwer cnductin lsses than MOSFETs Mre efficient than shrt circuit rated IGBTs Abslute Maximum Ratings TO-247AC Parameter Max. Units V CES Cllectr-t-Emitter Breakdwn Vltage 200 V I C @ T C = 25 C Cntinuus Cllectr Current 4 I C @ T C = 0 C Cntinuus Cllectr Current 2 A I CM Pulsed Cllectr Current 82 I LM Clamped Inductive Lad Current 82 V GE Gate-t-Emitter Vltage ± 20 V E ARV Reverse Vltage Avalanche Energy ƒ 270 mj P D @ T C = 25 C Maximum Pwer Dissipatin 60 P D @ T C = 0 C Maximum Pwer Dissipatin 65 W T J Operating Junctin and -55 t + 50 T STG Strage Temperature Range C Sldering Temperature, fr secnds 300 (0.063 in. (.6mm) frm case ) Munting trque, 6-32 r M3 screw. lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junctin-t-Case 0.77 R θcs Case-t-Sink, Flat, Greased Surface 0.24 C/W R θja Junctin-t-Ambient, typical scket munt 40 Wt Weight 6 (0.2) g (z) www.irf.cm 04/26/04
Electrical Characteristics @ T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins V (BR)CES Cllectr-t-Emitter Breakdwn Vltage 200 V V GE = 0V, I C = 250µA V (BR)ECS Emitter-t-Cllectr Breakdwn Vltage 8 V V GE = 0V, I C =.0A V (BR)CES/ T J Temperature Ceff. f Breakdwn Vltage 0.43 V/ C V GE = 0V, I C =.0mA 2.43 3. I C = 2A V CE(ON) Cllectr-t-Emitter Saturatin Vltage 2.97 I C = 4A See Fig.2, 5 V 2.47 I C = 2A, T J = 50 C V GE(th) Gate Threshld Vltage 3.0 6.0 V CE = V GE, I C = 250µA V GE(th) / T J Temperature Ceff. f Threshld Vltage - mv/ C V CE = V GE, I C = 250µA g fe Frward Transcnductance 6 24 S V CE = 0V, I C = 2A 250 V GE = 0V, V CE = 200V I CES Zer Gate Vltage Cllectr Current 2.0 µa V GE = 0V, V CE = V, T J = 25 C 5000 V GE = 0V, V CE = 200V, T J = 50 C I GES Gate-t-Emitter Leakage Current ±0 na V GE = ±20V Switching Characteristics @ T J = 25 C (unless therwise specified) Parameter Min. Typ. Max. Units Cnditins Q g Ttal Gate Charge (turn-n) 86 30 I C = 2A Q ge Gate - Emitter Charge (turn-n) 3 20 nc V CC = 400V See Fig. 8 Q gc Gate - Cllectr Charge (turn-n) 29 44 t d(n) Turn-On Delay Time 24 t r Rise Time 24 T J = 25 C ns t d(ff) Turn-Off Delay Time 220 330 I C = 2A, V CC = 960V t f Fall Time 80 270, R G = Ω E n Turn-On Switching Lss.04 Energy lsses include "tail" E ff Turn-Off Switching Lss 3.40 mj See Fig. 9,, 4 E ts Ttal Switching Lss 4.44 5.2 t d(n) Turn-On Delay Time 24 T J = 50 C, t r Rise Time 25 I C = 2A, V CC = 960V ns t d(ff) Turn-Off Delay Time 3, R G = Ω t f Fall Time 380 Energy lsses include "tail" E ts Ttal Switching Lss 7.39 mj See Fig., 4 L E Internal Emitter Inductance 3 nh Measured 5mm frm package C ies Input Capacitance 800 V GE = 0V C es Output Capacitance 20 pf V CC = 30V See Fig. 7 C res Reverse Transfer Capacitance 8 ƒ =.0MHz Ntes: Repetitive rating; V GE = 20V, pulse width limited by max. junctin temperature. ( See fig. 3b ) V CC = 80%(V CES ), V GE = 20V, L = µh, R G = Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junctin temperature. Pulse width 80µs; duty factr 0.%. Pulse width 5.0µs, single sht. 2 www.irf.cm
Lad Current ( A ) 50 40 30 20 Square wave: 60% f rated vltage I Fr bth: Duty cycle: 50% T J = 25 C T sink = 90 C Gate drive as specified Pwer D issipatin = 35W Triangular wave: I Clamp vltage: 80% f rated Ideal dides 0 A 0. 0 f, Frequency (khz) Fig. - Typical Lad Current vs. Frequency (Lad Current = I RMS f fundamental) 0 0 I C, Cllectr-t-Emitter Current (A) T = 50 T = 25 20µs PULSE WIDTH V CE, Cllectr-t-Emitter Vltage (V) I C, Cllectr-t-Emitter Current (A) T = 50 T = 25 V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 V GE, Gate-t-Emitter Vltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.cm 3
Maximum DC Cllectr Current(A) 50 40 30 20 V CE, Cllectr-t-Emitter Vltage(V) 4.0 3.0 2.0 80 us PULSE WIDTH I C = I C = 42 A 2 A I C =.5 A 0 25 50 75 0 25 50 T C, Case Temperature ( C).0-60 -40-20 0 20 40 60 80 0 20 40 60 T J J, Junctin, Temperature ( C ( ) C) Fig. 4 - Maximum Cllectr Current vs. Case Temperature Fig. 5 - Typical Cllectr-t-Emitter Vltage vs. Junctin Temperature Thermal Respnse (Z thjc ) 0. D = 0.50 0.20 0. 0.05 PDM t 0.02 SINGLE PULSE t2 0.0 (THERMAL RESPONSE) Ntes:. Duty factr D = t / t2 2. Peak T J = PDM x Z thjc + TC 0.0 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duratin (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junctin-t-Case 4 www.irf.cm
C, Capacitance (pf) 4000 3000 2000 00 VGE = 0V, f = MHz Cies = Cge + Cgc, C ce Cres = Cgc Ces = Cce + Cgc C ies C es C res SHORTED V GE, Gate-t-Emitter Vltage (V) 20 6 2 8 4 V CC = 400V I C = 2A 0 0 V CE, Cllectr-t-Emitter Vltage (V) 0 0 20 40 60 80 0 Q G, Ttal Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Cllectr-t-Emitter Vltage Fig. 8 - Typical Gate Charge vs. Gate-t-Emitter Vltage Ttal Switching Lsses (mj) 5.0 4.8 4.6 4.4 4.2 V CC = 960V T = 25 I C = 2A Ttal Switching Lsses (mj) 0 R G = Ω Ohm V CC = 960V I C = I C = 42A 2A I C =.5A 4.0 0 20 30 40 50 R GR G,, Gate Resistance (Ohm) ( Ω ) 0. -60-40 -20 0 20 40 60 80 0 20 40 60 T J, Junctin Temperature ( C ) Fig. 9 - Typical Switching Lsses vs. Gate Resistance Fig. - Typical Switching Lsses vs. Junctin Temperature www.irf.cm 5
Ttal Switching Lsses (mj) 25.0 20.0 5.0.0 5.0 R G = Ω Ohm T J = 50 C V CC = 960V 0.0 0 20 30 40 50 I C, Cllectr-t-emitter Current (A) I C, Cllectr-t-Emitter Current (A) 00 0 V GE = 20V T = 25 SAFE OPERATING AREA 0 00 000 V CE, Cllectr-t-Emitter Vltage (V) Fig. - Typical Switching Lsses vs. Cllectr-t-Emitter Current Fig. 2 - Turn-Off SOA 6 www.irf.cm
50V 00V L V * C D.U.T. 0-960V 480µF 960V R L = 960V 4 X I C@25 C * Driver same ty pe as D.U.T.; Vc = 80% f Vce(max) * Nte: Due t the 50V pwer supply, pulse width and inductr will increase t btain rated Id. Fig. 3a - Clamped Inductive Lad Test Circuit Fig. 3b - Pulsed Cllectr Current Test Circuit I C 50V 00V L Driver* D.U.T. V C ƒ Fig. 4a - Switching Lss Test Circuit * Driver same type as D.U.T., VC = 960V 90% ƒ % V C 90% t d(ff) Fig. 4b - Switching Lss Wavefrms I C 5% % t d(n) t r E n t f E ff t=5µs E ts = (E n +E ff ) www.irf.cm 7
TO-247AC Package Outline Dimensins are shwn in millimeters (inches) TO-247AC Part Marking Infrmatin EXAMPLE: THIS IS AN IRFPE30 WITH AS S EMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASSEMBLY LINE "H" Nte: "P" in assembly line psitin indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO AS S E MB LY LOT CODE IRFPE30 035H 56 57 PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specificatins subject t change withut ntice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segund, Califrnia 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.cm fr sales cntact infrmatin. 04/04 8 www.irf.cm