2N6344A, 2N6348A, 2N6349A Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. Features Blocking Voltage to 8 V All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability Pin Out Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Gate Triggering Guaranteed in all Four Quadrants For 4 Hz Operation, Consult Factory 8. A Devices Available as 2N6344 thru 2N6349 Pb Free Package is Available CASE 221A STYLE 4 Functional Diagram 1 2 Additional nformation Datasheet Resources Samples
Maximum Ratings and Thermal Characteristics (T J = 25 C unless otherwise noted) Rating Symbol Value Unit *Peak Repetitive Off-State Voltage (Note 1) (T J = -4 to 11 C, Sine Wave, 5 to 6 Hz, Gate Open) 2N6344A, 6 2N6348A V DRM, V RRM 2N6349A 8 V *On-State RMS Current (Full Cycle Sine Wave 5 to 6 Hz) (T C =+8 C) T (RMS) 12 (T C =+9 C) 6. A *Peak Non Repetitive Surge Current (One Full Cycle, Sine Wave 6 Hz, T C = +8 C) Preceded and followed by rated current TSM 1 A Circuit Fusing Considerations (t = 8.3 ms) 2 t 59 A²s *Peak Gate Power (T C = +8 C, Pulse Width = 2 µs) P GM W *Average Gate Power (T C = +8 C, t = 8.3 ms) P G(AV).5 W *Peak Gate Current (T C = +8 C, Pulse Width = 2. µs) GM 2. A *Peak Gate Voltage (T C = +8 C, Pulse Width = 2. µs) V GM ±1 V *Operating Junction Temperature Range T J -4 to +15 C *Storage Temperature Range T stg -4 to +15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. * ndicates JEDEC Registered Data. 1. V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit * Thermal Resistance, Junction to Case R 8JC 2. C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 1 seconds T L 26 C
Electrical Characteristics - OFF (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit *Peak Repetitive Blocking Current (V D = V DRM = V RRM ; Gate Open) T J = 25 C DRM, - - 1 µa RRM T J = 11 C - - 2. ma Electrical Characteristics - ON (T C = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State Voltage ( TM = ±17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle 2%) V TM - 1.3 175 V Gate Trigger Current (Continuous dc) (V D = 12 Vdc, R L = 1 Q) Quadrant : MT2(+), G(+) All - 6. 5 Quadrant : MT2(+), G( ) 2N6348A & 2N6349A - 6. 75 Quadrant : MT2( ), G( ) All - 1 5 Quadrant V: MT2( ), G(+) 2N6348A & 2N6349A - 25 75 GT ma MT2(+), G(+); MT2( ), G( ) T C = 4 C - 1 MT2(+), G( ); MT2( ), G(+) T C = 4 C - 125 Gate Trigger Voltage (Continuous dc) (V D = 12 Vdc, R L = 1 Q) Quadrant : MT2(+), G(+) Both.9 2. Quadrant : MT2(+), G( ) 2N6349 only.9 2.5 Quadrant : MT2( ), G( ) Both 1.1 2. Quadrant V: MT2( ), G(+) 2N6349 only 1.4 2.5 V GT V MT2(+), G(+); MT2( ), G( ) TC = 4 C T C = 4 C 2.5 MT2(+), G( ); MT2( ), G(+) TC = 4 C T C = 4 C 3. Gate Non Trigger Voltage (Continuous dc) V GD.2 - - MT2(+), G(+); MT2( ), G( ); MT2(+), G( ); MT2( ), G( ) TC = 25 C - 6. 4 H TC = -4 C - - 75 ma Turn-On Time (V D = Rated V DRM, TM = 11 A, GT = 1 ma, t gt - 1.5 2. µs ndicates JEDEC Registered Data.
Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Commutation Voltag (V D = Rated V DRM, TM = 17 A, Commutating di/dt = 6.1 A/ms, Gate Unenergized, T C = 8 C) dv/dt(c) V/µs Voltage Current Characteristic of Triacs (Bidirectional Device) Symbol Parameter V DRM Peak Repetitive Forward Off State Voltage DRM V RRM Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage RRM Peak Reverse Blocking Current V TM Maximum On State Voltage H Holding Current Quadrant Definitions for a Triac Quadrant Quadrant Quadrant Quadrant V All polarities are referenced to MT1. With in phase signals (using standard AC lines) quadrants and are used.
Ratings and Characteristic Curves Figure 1. RMS Current Derating Figure 2. On State Power Dissipation 11 3 dc T, CASE TEMPERATURE ( C) C 1 9 8 7 6 9 1 18 = CONDUCTON ANGLE dc. 4. 6. 8. 12 14 1 T(RMS), RMS ON-STATE CURRENT, (AMP) P AV, AVERAGE POWER (WATTS) 16 12 8. 4. T J = 11 C = CONDUCTON ANGLE = 3 2.4. 6.8. 1 12 14 T(RMS), RMS ON-STATE CURRENT (AMP) 6 1 9 18 Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current V gt, GATE TRGGER VOLTAGE (VOLTS) 1.8 1.6 1.4 1.2.8.6 QUADRANTS 1 2 3 QUADRANT 4 V D = 12 V GT, GATE TRGGER CURRENT (ma) 5 3 1 1 2 QUADRANT 3 7. 4 V D = 12 V.4 T J, JUNCTON TEMPERATURE ( C) 6 4 4 6 8 1 12 14 T J, JUNCTON TEMPERATURE ( C)
Figure 7. Maximum On-State Characteristics Figure 8. Typical Holding Current i TM, NSTANTANEOUS ON-STATE CURRENT (AMP) 1 7 5 3 1 7. 3. 2..7.5.3.2 T J = 1 C 25 C.1 8.4. 1.2 1.6 2. 2.4 2.8 3.2 3.6 4. v TM, NSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 4.4 H, HOLDNG CURRENT (ma) 1 7. 3. MAN TERMNAL #2 POSTVE MAN TERMNAL #1 POSTVE GATE OPEN 2. 6 2 4 6 8 1 1 14 T J, JUNCTON TEMPERATURE ( C) Figure 9. Maximum Allowable Surge Current, PEAK SURGE CURRENT (AMP) TSM 1 8 6 4 CYCLE T J = 1 C f = 6 Hz Surge is preceded and followed by rated current 2.3. 7. 1 NUMBER OF CYCLES Figure 1. Typical Thermal Response r(t), TRANSENT THERMAL RESSTANCE(NORMALZED).5.2.1.5.2.1.1.2.5 1. 2. Z JC(t) = r(t) R JC 5 1 5 k 2. k k 1 k t,tme (ms)
Dimensions Part Marking System SEATNG PLANE B F T C S Q 4 A H Z 12 3 K U 1 2 CASE 221A STYLE 4 L R V G N D J Dim nches Millimeters Min Max Min Max Pin Assignment A.57.6 14.48 15.75 B.38.45 9.66 1.28 C.16.19 4.7 4.82 D.25.35.64.88 F.142.147 3.61 3.73 G.95.15 2.42 2.66 H.11.155 2.8 3.93 J.14.22.36.55 K.5.562 12.7 14.27 L.45.6 1.15 1.52 N.19.21 4.83 5.33 Q.1.1 2.54 3.4 R.8.11 2.4 2.79 S.45.55 1.15 1.39 T.235.255 5.97 6.47 U..5. 1.27 V.45 1.15 Z.8 2.4 Ordering nformation Device Package Shipping 2N6344A 2N6344AG 2N6348A 2N6348AG 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 (Pb-Free) (Pb-Free) 5 Units / Box 1. DMENSONNG AND TOLERANCNG PER ANS Y14.5M, 1982. 2. CONTROLLNG DMENSON: NCH. 3. DMENSON Z DEFNES A ZONE WHERE ALL BODY AND LEAD RREGULARTES ARE ALLOWED. 2N6349A 2N6349AG (Pb-Free)