Automotive Dual N-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 6 R DS(on) (Ω) at V GS = V.55 I D (A) 4.5 Configuration Dual SO-8 D D 2 FEATURES TrenchFET Power MOSFET Package with Low Thermal Resistance AEC-Q RELIABILITY Passed all AEC-Q Reliability Testing Characterization Ongoing Pb-free Available RoHS* COMPLIANT S 8 D G 2 7 D S 2 3 6 D 2 G 2 4 5 D 2 G G 2 Top View S N-Channel MOSFET S 2 N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb SO-8 SQ4946EY-T-E3 SQ4946EY-T ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 6 V Gate-Source Voltage V GS ± 2 T Continuous Drain Current a C = 25 C 4.5 I D T C = 7 C 3.8 A Continuous Source Current (Diode Conduction) a I S 2 Pulsed Drain Current b I DM 3 Single Pulse Avalanche Energy E AS 7.2 mj L =. mh Single Pulse Avalanche Current I AS 2 A T Maximum Power Dissipation b C = 25 C 2.4 P D W T A = 7 C.7 Operating Junction and Storage Temperature Range T J, T stg - 55 to + 75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 62.5 Junction-to-Case (Drain) R thjc - C/W Notes a. Package limited. b. Pulse test; pulse width 3 µs, duty cycle 2 %. c. When mounted on " square PCB (FR-4 material). Document Number: 74492 S-856-Rev. C, 23-Oct-8
SPECIFICATIONS T C = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 µa - - - V Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa. - 3. Gate-Source Leakage I GSS V DS = V, V GS = ± 2 V - - ± na Zero Gate Voltage Drain Current I DSS V GS = V V DS = 6 V, T J = 55 C - - 25 µa V GS = V V DS = 6 V - - 2. V GS = V V DS = 6 V, T J = 75 C - - - On-State Drain Current a I D(on) V GS = V V DS 5 V 2 - - A Notes a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = V I D = 4.5 A -.45.55 Drain-Source On-State Resistance a R DS(on) V GS = V I D = 3 A, T J = 25 C - - - Ω V GS = V I D = 3 A, T J = 75 C - - - Forward Transconductance a g fs V DS = 5 V, I D = 4.5 A - 3 - S Dynamic b Input Capacitance C iss - - - Output Capacitance C oss V GS = V V DS = 25 V, f = MHz - - - pf Reverse Transfer Capacitance C rss - - - Total Gate Charge c Q g - 9 3 Gate-Source Charge c Q gs V GS = V V DS = 3 V, I D = 4.5 A - 4 - nc Gate-Drain Charge c Q gd - 3 - Turn-On Delay Time c t d(on) - 3 2 Rise Time c t r V DD = 3 V, R L = 3 Ω - 2 Turn-Off Delay Time c t d(off) I D A, V GEN = V, R g = 6 Ω - 36 6 ns Fall Time c t f - 2 Source-Drain Diode Ratings and Characteristics T C = 25 C b Pulsed Current a I SM - - - A Forward Voltage V SD I F = 85 A, V GS = V - - - V Reverse Recovery Time t rr - 35 6 ns Peak Reverse Recovery Current I RM(REC) I F = 2 A, di/dt = A/µs - - - A Reverse Recovery Charge Q rr - - - µc Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74492 2 S-856-Rev. C, 23-Oct-8
TYPICAL CHARACTERISTICS T A = 25 C, unless otherwise noted 3 3 V GS = thru 5 V T C = - 55 C 24 24 25 C 8 2 4 V 8 2 5 C 6 3 V 6 2 3 4 5 V DS - Drain-to-Source Voltage (V) Output Characteristics 3 2 3 4 5 6 V GS - Gate-to-Source Voltage (V) Transfer Characteristics.2 Transconductance (S) - g f s 25 2 5 5 - On-Resistance (Ω) R DS(on).6.2.8.4 2 4 6 8 2 Transconductance 5 5 2 25 On-Resistance vs. Drain Current 4 C - Capacitance (pf) 2 8 6 4 C iss - Gate-to-Source Voltage (V) 8 6 4 V DS = 3 V I D = 4.5 A 2 C rss C oss V GS 2 2 24 36 48 6 V DS - Drain-to-Source Voltage (V) Capacitance 4 8 2 6 2 Q g - Total Gate Charge (nc) Gate Charge Document Number: 74492 S-856-Rev. C, 23-Oct-8 3
TYPICAL CHARACTERISTICS T A = 25 C, unless otherwise noted 2.2.9 V GS = V I D = 4.5 A 2 R DS(on) - On-Resistance (Normalized).6.3. - Source Current (A) I S T J = 75 C T J = 25 C.7.4-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature..2.4.6.8..2.4 V SD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage.4 56.2 Variance (V) VGS(th). -.2 -.4 -.6 I D = 25 µa (V) V DS 52 48 44 -.8 -. - 5-25 25 5 75 25 5 75 T J - Temperature ( C) On-Resistance vs. Gate-to-Source Voltage 4-5 - 25 25 5 75 25 5 75 T J - Junction Temperature ( C) Drain Source Breakdown vs. Junction Temperature Document Number: 74492 4 S-856-Rev. C, 23-Oct-8
THERMAL RATINGS T A = 25 C, unless otherwise noted 2 8 6 4 (A) I Da v 2 25 5 75 25 5 75 T C - Ambient Temperature ( C) Maximum Drain Current vs. Ambient Temperature 5 4...... T AV (s) Avalanche Current vs. Time.4.2 Power (W) 3 2 Variance (V) VGS(th). -.2 -.4 -.6 -.8 I D = 25 µa.. 3 Time (s) Single Pulse Power, Junction-to-Ambient -. - 5-25 25 5 75 25 5 75 T J - Temperature ( C) Threshold Voltage (A) Drain Current I D -.. V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Safe Operating Area Document Number: 74492 S-856-Rev. C, 23-Oct-8 5
THERMAL RATINGS T A = 25 C, unless otherwise noted 2 N ormalized Effective Transien t Thermal Impedance.. -4-3 -2 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 2 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance..2..5.2 Single Pulse Notes: P DM t t 2 t. Duty Cycle, D = t 2 2. Per Unit Base = R thja = 62.5 C/W 3. T JM - T A = P DM Z (t) thja 4. Surface Mounted. - 4-3 - 2-3 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient I AS(PEAK) (A).. -4-3 -2 - t av (s) Single Pulse Avalanche Current (Peak) vs. Time in Avalanche Document Number: 74492 6 S-856-Rev. C, 23-Oct-8
THERMAL RATINGS T A = 25 C, unless otherwise noted I AS(peak) (A) E (av)(peak) (mj). Inductance (mh) 25 5 75 25 5 T J(start) ( C) Single Pulse Avalanche Current (Peak) vs. Inductance Single Pulse Avalanche Energy (Peak) vs. T J(start) I AR(peak) (A).. -4-3 -2 - t av (s) Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T A = 25 C Document Number: 74492 S-856-Rev. C, 23-Oct-8 7
THERMAL RATINGS T A = 25 C, unless otherwise noted I AR(peak) (A).. -4-3 -2 - t av (s) Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T A = 5 C Note The characteristics shown in the six graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Single Pulse Avalanche Current (Peak) vs. Time in Avalanche - Single Pulse Avalanche Current (Peak) vs. Inductance - Single Pulse Avalanche Energy (Peak) vs. T J (start) - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T A = 25 C - Repetitive Avalanche Current (Peak) vs. Time in Avalanche at T A = 5 C are given for general guidelines only to enable the user to get a "ball park" indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?74492. Document Number: 74492 8 S-856-Rev. C, 23-Oct-8
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