N-Channel 150 V (D-S) MOSFET
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1 N-Channel 5 V (D-S) MOSFET SUM89E PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) Q g (TYP.) 5.9 at V GS = V 28.5 at V GS = 7.5 V 9 TO-263 Top View S D G Ordering Information: SUM89E-GE3 (lead (Pb)-free and halogen-free) 63 nc FEATURES ThunderFET power MOSFET Maximum 75 C junction temperature % R g and UIS tested Material categorization: for definitions of compliance please see APPLICATIONS Power supplies: - Uninterruptible power supplies - AC/DC switch-mode power supplies - Lighting Synchronous rectification DC/DC converter Motor drive switch DC/AC inverter Solar micro inverter Class D audio amplifier Battery management G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 5 V Gate-Source Voltage V GS ± 2 28 Continuous Drain Current (T J = 5 C) I D 74 A Pulsed Drain Current (t = μs) I DM 24 Avalanche Current I AS 6 L =. mh Single Avalanche Energy a E AS 8 mj 375 b Maximum Power Dissipation a P D W 25 b Operating Junction and Storage Temperature Range T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) c R thja 4 C/W Junction-to-Case (Drain) R thjc.4 Notes a. Duty cycle %. b. See SOA curve for voltage derating. c. When mounted on " square PCB (FR4 material). S6-87-Rev. A, 25-Jan-6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
2 SUM89E SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 25 μa Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 μa 2-5 V Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V - - ± 25 na Zero Gate Voltage Drain Current I DSS V DS = 5 V, V GS = V, T J = 25 C - - V DS = 5 V, V GS = V - - μa V DS = 5 V, V GS = V, T J = 75 C ma On-State Drain Current a I D(on) V DS V, V GS = V A V GS = V, I D = 3 A Drain-Source On-State Resistance a R DS(on) V GS = 7.5 V, I D = 3 A Forward Transconductance a g fs V DS = 5 V, I D = 3 A S Dynamic b Input Capacitance C iss Output Capacitance C oss V GS = V, V DS = 75 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g Gate-Source Charge c Q gs V DS = 75 V, V GS = V, I D = 6 A nc Gate-Drain Charge c Q gd Gate Resistance R g f = MHz Turn-On Delay Time c t d(on) Rise Time c t r V DD = 75 V, R L = Turn-Off Delay Time c t d(off) I D 6 A, V GEN = V, R g = ns Fall Time c t f Drain-Source Body Diode Ratings and Characteristics b () Pulsed Current (t = μs) I SM A Forward Voltage a V SD I F = 3 A, V GS = V V Reverse Recovery Time t rr - 22 ns Peak Reverse Recovery Charge I RM(REC) IF = 3 A, di/dt = A/μs - 2 A Reverse Recovery Charge Q rr -.5 μc Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S6-87-Rev. A, 25-Jan-6 2 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
3 SUM89E TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 25 V GS = V thru 8 V V GS = 7 V V GS = 6 V V GS = 5 V V DS - Drain-to-Source Voltage (V) T C =-55 C V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 75. g fs - Transconductance (S) T C =-55 C R DS(on) - On-Resistance (Ω) V GS = 7.5 V V GS = V Transconductance On-Resistance vs. Drain Current 7 C - Capacitance (pf) C rss C iss C oss V GS - Gate-to-Source Voltage (V) I D = 6 A V DS = 5 V, 75 V, V V DS - Drain-to-Source Voltage (V) Q g - Total Gate Charge (nc) Capacitance Gate Charge S6-87-Rev. A, 25-Jan-6 3 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
4 SUM89E TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) R DS(on) - On-Resistance (Normalized) I D = 3 A V GS = V V GS = 7.5 V T J - Junction Temperature ( C) V GS(th) - Variance (V) I D = 25 μa I D = 5 ma T J - Temperature ( C) On-Resistance vs. Junction Temperature Threshold Voltage.5 2 R DS(on) - On-Resistance (Ω) T J = 25 C T J = 25 C V DS - Drain-to-Source Voltage (V) I D = 25 μa V GS - Gate-to-Source Voltage (V) T J - Temperature ( C) On-Resistance vs. Gate-to-Source Voltage Drain Source Breakdown vs. Junction Temperature 5 I S - Source Current (A).. T J = 5 C T J = 25 C V SD - Source-to-Drain Voltage (V) T C - Case Temperature ( C) Source Drain Diode Forward Voltage Current De-Rating S6-87-Rev. A, 25-Jan-6 4 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
5 SUM89E THERMAL RATINGS (T A = 25 C, unless otherwise noted) I DM limited I D limited Limited by R DS(on) () μs ms ms ms, s, s, DC I DAV (A) 5 C 25 C BVDSS limited Single pulse.. V DS - Drain-to-Source Voltage (V) () V GS > minimum V GS at which R DS(on) is specified Safe Operating Area.... Time (s) I DAV vs. Time Normalized Effective Transient Thermal Impedance Duty Cycle =.5.2 Notes:.. t.5 t 2 t. Duty cycle, D =.2 t 2 2. Per unit base = R thja = 4 C/W Single pulse 3. T JM -T A = P DM Z (t) thja 4. Surface mounted.... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P DM S6-87-Rev. A, 25-Jan-6 5 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
6 SUM89E THERMAL RATINGS (T A = 25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle = Single pulse..... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 C) - Normalized Transient Thermal Impedance Junction to Case (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S6-87-Rev. A, 25-Jan-6 6 Document Number: ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
7 TO-263 (D 2 PAK): 3-LEAD Package Information -B- E -A- L2 A c2 D4 D2 D3 E K 6 E3 D L3 L D A A e b2 b Detail A c E2. M A M 2 PL - 5 L L4 DETAIL A (ROTATED 9 ) M b b SECTION A-A Notes. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. c c c* INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A b b b Thin lead Thick lead c Thin lead Thick lead c D D D D D E E E E e. BSC 2.54 BSC K L L L L L4. BSC.254 BSC M ECN: T3-77-Rev. K, 3-Sep-3 DWG: 5843 Revison: 3-Sep-3 Document Number: 798 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
8 AN826 RECOMMENDED MINIMUM PADS FOR D 2 PAK: 3-Lead.42 (.668).635 (6.29).355 (9.7).45 (3.683).35 (3.429).2 (5.8).5 (.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: Apr-5
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9
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