4-Lines, Uni-directional, Low Capacitance Transient Voltage Suppressors http//:www.sh-willsemi.com Descriptions The is a low capacitance TVS (Transient Voltage Suppressor) array designed to protect high speed data interfaces. It has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by ESD (Electrostatic Discharge). The incorporates four pairs of low capacitance steering diodes plus a TVS diode. The may be used to provide ESD protection up to ±3kV (contact discharge) according to IEC6-4-2, and withstand peak pulse current up to 8A (5/5ns) according to IEC6-4-4, 25A (8/2μs) according to IEC6-4-5. The is available in SOT-23-6L package. Standard products are Pb-free and Halogen-free. Features Reverse stand-off voltage: 5V max. Transient protection for each line according to IEC6-4-2 (ESD): ±3kV (contact discharge) IEC6-4-4 (EFT): 8A (5/5ns, Any to GND) IEC6-4-5 (surge): 25A (8/2μs, Any to GND) Low capacitance: C - GND = 3pF typ. Ultra-low leakage current: I R =2nA typ. Low clamping voltage: V CL = 11.8V @ = 16A (TLP) Solid-state silicon technology Applications USB 2. Video Graphics Cards DVI IEEE 1394 Monitors and Flat Panel Displays / Ethernet Notebooks SOT-23-6L 1 3 4 6 Circuit diagram 5425 = Device code EA YW 5 2 6 5 4 1 2 VDD 5425 EAYW GND =Special code = Date code Marking & Pin configuration (Top View) Order information Device Package Shipping -6/TR SOT-23-6L 3/Tape&Reel 3 Will Semiconductor Ltd. 1 Revision 1.4, 217/11/1
Absolute maximum ratings Parameter Symbol Rating Unit Peak pulse power (t p = 8/2μs) P pk 35 W Peak pulse current (t p = 8/2μs) 25 A ESD according to IEC6-4-2 air discharge V ESD ESD according to IEC6-4-2 contact discharge ±3 Junction temperature T J 125 Operation temperature T OP -4 to 85 Storage temperature T STG -55 to 15 Lead temperature T L 26 ±3 kv Electrical characteristics (T A = 25, unless otherwise noted) I V F Forward voltage V RWM Reverse stand-off voltage I F Forward current I R Reverse leakage current V FC Forward clamping voltage V BR Reverse breakdown voltage Peak pulse current V CL Clamping voltage Peak pulse current V FC V F I BR I R V RWM V BR V CL V I F Definitions of electrical characteristics Will Semiconductor Ltd. 2 Revision 1.4, 217/11/1
Electrical characteristics (T A = 25, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit Reverse stand-off voltage V RWM 5. V Reverse leakage current I R V RWM = 5V 1 ua Reverse breakdown voltage V BR I BR = 1mA 7. 8.5 9.5 V Forward voltage V F I F = ma.6.9 1.2 V Clamping voltage 1) V CL = 16A, t p = ns 11.8 V Dynamic resistance 1) R DYN t p = ns.12 Ω Clamping voltage 2) V CL VESD = 8kV 12. V Clamping voltage 3) V CL = 1A, t p = 8/2μs 9.5 V = 25A, t p = 8/2μs 14. V Dynamic resistance 3) R DYN t p = 8/2μs.19 Ω Junction capacitance C - GND V R = V, f = 1MHz, 3. 5. pf VDD = floated, any to GND C - V R = V, f = 1MHz, any to 1.5 2.5 pf Notes: 1) TLP parameter: Z = 5Ω, t p = ns, t r = 2ns, averaging window from 6ns to 8ns. R DYN is calculated from A to 3A. 2) Contact discharge mode, according to IEC6-4-2. 3) Non-repetitive current pulse, according to IEC6-4-5. R DYN is calculated from 5A to 2A. Will Semiconductor Ltd. 3 Revision 1.4, 217/11/1
Peak pulse power (W) % of Rated power V C - Clamping voltage (V) Junction capacitance (pf) Peak pulse current (%) Current (%) Typical characteristics (T A = 25, unless otherwise noted) 9 Front time: T 1 = 1.25 T = 8 s Time to half-value: T 2 = 2 s 9 5 T 2 T T 1 2 Time ( s) 8/2μs waveform per IEC6-4-5 3ns 6ns t t r =.7~1ns Time (ns) Contact discharge current waveform per IEC6-4-2 14 Pulse waveform: t p = 8/2 s 3.2 2.8 f = 1MHz 13 12 11 Any I/ O to GND 9 5 15 2 25 - Peak pulse current (A) Clamping voltage vs. Peak pulse current 2.4 2. 1.6 1.2.8.4 VDD= floated, any to GND Any to. 1 2 3 4 5 V R - Reverse voltage (V) Capacitance vs. Reverse voltage 8 6 4 2 1 1 Pulse time ( s) Non-repetitive peak pulse power vs. Pulse time 25 5 75 125 15 T A - Ambient temperature ( ) Power derating vs. Ambient temperature Will Semiconductor Ltd. 4 Revision 1.4, 217/11/1
TLP current (A) Typical characteristics (T A = 25, unless otherwise noted) ESD clamping (+8kV contact discharge per IEC6-4-2) ESD clamping (-8kV contact discharge per IEC6-4-2) 4 35 3 25 Z = 5 t r = 2ns t p = ns 2 15 5 2 4 6 8 12 14 16 TLP voltage (V) TLP Measurement Will Semiconductor Ltd. 5 Revision 1.4, 217/11/1
PACKAGE OUTLINE DIMENSIONS SOT-23-6L D b L2 E E1 L1 L θ e e1 TOP VIEW c SIDE VIEW A A1 A2 SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A 1.5-1.45 A1 -.15 A2 1. 1.15 1.3 b.3.4.5 c. -.21 D 2.72 2.92 3.12 E 2.6 2.8 3. E1 1.4 1.6 1.8 e.85.95 1.5 e1 1.8 1.9 2. L.3 -.6 L1.25 BSC θ - 8 Recommended land pattern (Unit: mm).95 3.6 1.4 1..6 2.5 Notes: This recommended land pattern is for reference purposes only. Please consult your manufacturing group to ensure your PCB design guidelines are met. Will Semiconductor Ltd. 6 Revision 1.4, 217/11/1
TAPE AND REEL INFORMATION Reel Dimensions RD P1 Tape Dimensions W Quadrant Assignments For PIN1 Orientation In Tape Q1 Q2 Q1 Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension 7inch 13inch W Overall width of the carrier tape 8mm 12mm 16mm P Pitch between successive cavity centers 2mm 4mm 8mm Pin1 Pin1 Quadrant Q1 Q2 Q3 Q4 Will Semiconductor Ltd. 7 Revision 1.4, 217/11/1