Power Schottky rectifier Features High unction temperature capability Optimized trade-off between leakage current and forward voltage drop Low leakage current Avalanche capability specified Description This dual diode Schottky rectifier is suited for high frequency switch mode power supply. Packaged in TO-2AB, I 2 PA and D 2 PA, this device is particularly suited for use in notebook, game station, LCD TV and desktop adapters, providing these applications with a good efficiency at both low and high load. Table 1. Symbol Device summary Value I F(AV) 2 x A V RRM 8 V T (max) 175 C V F (typ) 475 mv Figure 1. A2 A2 I 2 PA STPS4M8CR V I A2 TO-2AB STPS4M8CT Electrical characteristics (a) 2 x I O I A2 D 2 PA STPS4M8CG-TR "Forward" X I F V RRM V AR V R I O I R X V VTo V F(Io) V F V F(2xIo) "Reverse" I AR a. V ARM and I ARM must respect the reverse safe operating area defined in Figure 11. V AR and I AR are pulse measurements (t p < 1 µs). V R, I R, V RRM and V F, are static characteristics April 11 Doc ID 18718 Rev 1 1/1 www.st.com 1
Characteristics STPS4M8C 1 Characteristics Table 2. Absolute ratings (limiting values, per diode, at T amb = 25 C unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 8 V I F(RMS) Forward rms current 3 A I F(AV) Average forward current, δ =.5 I FSM P ARM (1) V ARM (2) Surge non repetitive forward current T c = 15 C T c = 15 C When the two diodes 1 and 2 are used simultaneously: ΔT (diode 1) = P(diode 1) x R th(-c) (Per diode) + P(diode 2) x R th(c) Per diode Per device 4 t p = 1 ms sinusoidal T c = 25 C A Repetitive peak avalanche power T = 25 C, t p = 1 µs 1 W Maximum repetitive peak avalanche voltage t p < 1 µs, T < 15 C, I AR < 3 A 1 V V (2) Maximum single pulse ASM peak avalanche voltage t p < 1 µs, T < 15 C, I AR < 3 A 1 V T stg Storage temperature range -65 to +175 C T Maximum operating unction temperature (3) 175 C 1. For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN25. 2. See Figure 11 3. dptot 1 < condition to avoid thermal runaway for a diode on its own heatsink dt Rth(-a) Table 3. Thermal parameters Symbol Parameter Value Unit R th(-c) Junction to case per diode 1.3 total.75 C/W R th(c) Coupling. C/W A 2/1 Doc ID 18718 Rev 1
Characteristics Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) V F (2) Reverse leakage current Forward voltage drop 1. Pulse test: t p = 5 ms, δ < 2 % 2. Pulse test: t p = 38 µs, δ < 2 % T = 25 C - 15 65 µa V R = V RRM T = 125 C - 15 4 ma T = 25 C -.55.6 I F = 1 A T = 125 C -.475.51 T = 25 C -.655.735 I F = A T = 125 C -.57.635 T = 25 C -.8.9 I F = 4 A T = 125 C -.68.795 To evaluate the conduction losses use the following equation: P =.475 x I F(AV) +.8 x I F 2 (RMS) V Figure 2. P F(AV) (W) 22 T 18 δ = t p / T 16 14 12 1 8 6 4 Average forward power dissipation versus average forward current (per diode) t p δ =.5 δ =.1 δ =.2 δ =.5 δ = 1 2 I F(AV) (A) 2 4 6 8 1 12 14 16 18 22 24 26 28 Figure 3. I F(AV) (A) 24 22 18 16 14 12 1 8 6 4 Average forward current versus ambient temperature (δ =.5, per diode) R th(-a) = R th(-c) 2 T amb( C) 25 5 75 1 125 15 175 Figure 4. Normalized avalanche power derating versus pulse duration Figure 5. Normalized avalanche power derating versus unction temperature 1 P P ARM ARM (tp) (1µs) P ARM(T) P ARM(25 C) 1.2 1.1.8.6.1.4.1.1.1 1.2 t (µs) T ( C) p 1 1 1 25 5 75 1 125 15 Doc ID 18718 Rev 1 3/1
Characteristics STPS4M8C Figure 6. 26 24 2 18 16 14 1 1 8 6 4 I (A) M I M t δ =.5 Non repetitive surge peak forward current versus overload duration (maximum values, per diode) T = 25 C c T = 75 C c T = 125 C c 1.E-3 1.E-2 1.E-1 1.E+ t(s) Figure 7. 1..9.8.7.6.5.4.3.2 Z th(-c) /Rth(-c) Single pulse Relative thermal impedance unction to case versus pulse duration.1. t p(s) 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Figure 8. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 9. Junction capacitance versus reverse voltage applied (typical values, per diode) 1.E+5 1.E+4 I (µa) R T = 15 C T = 125 C 1 C(pF) F = 1 MHz V osc = 3 mv T = 25 C RMS 1.E+3 T = 1 C T = 75 C 1 1.E+2 T = 5 C 1.E+1 T = 25 C V R(V) 1.E+ 1 3 4 5 6 7 8 V R(V) 1 1 1 1 Figure 1. I FM(A) 4 35 3 25 15 Forward voltage drop versus forward current (per diode) T = 125 C (Maximum values) T = 125 C (Typical values) 1 T = 25 C (Maximum values) 5 V FM(V)..1.2.3.4.5.6.7.8.9 1. Figure 11. 3. 29. 28. 27. 26. 25. 24. 23. 22. I arm Reverse safe operating area (t p < 1 µs and T < 15 C) (A) I arm (V arm) 15 C, 1 µs 21. V arm (V). 1 15 11 115 1 125 13 135 14 145 15 4/1 Doc ID 18718 Rev 1
Characteristics Figure 12. Thermal resistance unction to ambient versus copper surface under tab for D 2 PA R th(-a) ( C/W) 8 epoxy printed board copper thickness = 35 µm 7 6 5 2 DPA 4 3 1 2 S Cu(cm ) 5 1 15 25 3 35 4 Doc ID 18718 Rev 1 5/1
Package information STPS4M8C 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.4 to.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPAC packages, depending on their level of environmental compliance. ECOPAC specifications, grade definitions and product status are available at: www.st.com. ECOPAC is an ST trademark. Table 5. TO-2AB dimensions Ref. Millimeters Dimensions Inches Min. Max. Min. Max. A 4.4 4.6.173.181 H2 Dia L5 C A L7 C 1.23 1.32.48.51 D 2.4 2.72.94.17 E.49.7.19.27 F.61.88.24.34 L2 F2 L6 F1 1.14 1.7.44.66 F2 1.14 1.7.44.66 G 4.95 5.15.194.2 F1 L9 D G1 2.4 2.7.94.16 F L4 H2 1 1.4.393.49 L2 16.4 Typ..645 Typ. G1 G M E L4 13 14.511.551 L5 2.65 2.95.14.116 L6 15.25 15.75.6.6 L7 6. 6.6.244.259 L9 3.5 3.93.137.154 M 2.6 Typ..12 Typ. Dia. 3.75 3.85.147.151 6/1 Doc ID 18718 Rev 1
Package information Table 6. D 2 PA dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C2 A A 4.4 4.6.173.181 2.49 2.69.98.16 A2.3.23.1.9 B.7.93.27.37 L D B2 1.14 1.7.45.67 L3 B2 B C R C.45.6.17.24 C2 1.23 1.36.48.54 D 8.95 9.35.352.368 G E 1. 1.4.393.49 A2 G 4.88 5.28.192.8 L 15. 15.85.59.624 M * V2 * FLAT ZONE NO LESS THAN 2mm L2 1.27 1.4.5.55 L3 1.4 1.75.55.69 M 2.4 3..94.126 R.4 typ..16 typ. V2 8 8 Figure 13. D 2 PA footprint (dimensions in mm) 16.9 1.3 5.8 1.3 8.9 3.7 Doc ID 18718 Rev 1 7/1
Package information STPS4M8C Table 7. I 2 PA dimensions Dimensions Ref. Millimeters Inches L2 E c2 A Min. Max. Min. Max. A 4.4 4.6.173.181 2.4 2.72.94.17 b.61.88.24.35 D b1 1.14 1.7.44.67 c.49.7.19.28 L1 c2 1.23 1.32.48.52 L b1 D 8.95 9.35.352.368 e 2.4 2.7.94.16 e e1 b c e1 4.95 5.15.195.3 E 1 1.4.394.49 L 13 14.512.551 L1 3.5 3.93.138.155 L2 1.27 1.4.5.55 8/1 Doc ID 18718 Rev 1
Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPS4M8CT STPS4M8CT TO-2AB 1.9 g 5 Tube STPS4M8CR STPS4M8CR I 2 PA 1.49 g 5 Tube STPS4M8CG-TR STPS4M8CG D 2 PA 1.48 g 1 Tape and reel 4 Revision history Table 9. Revision history Date Revision Changes 11-Apr-11 1 First issue. Doc ID 18718 Rev 1 9/1
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