General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS, high Speed switching and general purpose applications. MDF9N5 N-Channel MOSFET 5V, 9. A,.85Ω Features = 5V = 9. @ = V R DS(ON).85Ω @ = V Applications Power Supply HID Lighting Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 5 V Gate-Source Voltage S ±3 V Continuous Drain Current ( ) T C=5 o C 9. A T C= o C 5.5 A Pulsed Drain Current () M 36 A Power Dissipation T C=5 o C 38 W P D Derate above 5 o C.3 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS 3 mj Junction and Storage Range T J, T stg -55~5 Id limited by maximum junction temperature o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja 6.5 Thermal Resistance, Junction-to-Case () R θjc 3.3 o C/W
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF9N5-55~5 o C TO-F Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 5µA, = V 5 - - Gate Threshold Voltage (th) =, = 5µA 3. - 5. Drain Cut-Off Current SS = 5V, = V - - µa Gate Leakage Current I GSS = ±3V, = V - - na Drain-Source ON Resistance R DS(ON) = V, =.5A.7.85 Ω Forward Transconductance g fs = 3V, =.5A - 7 - S Dynamic Characteristics Total Gate Charge Q g - 9 - Gate-Source Charge Q gs = V, = 9.A, = V (3) - 5.7 - Gate-Drain Charge Q gd - 7.6 - Input Capacitance C iss - 78 Reverse Transfer Capacitance C rss = 5V, = V, f =.MHz -. Output Capacitance C oss - Turn-On Delay Time t d(on) - 8 Rise Time t r = V, = 5V, = 9.A, - 3 Turn-Off Delay Time t d(off) R G = 5Ω (3) - 38 Fall Time t f - 7 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S - 9. - A V SD I S = 9.A, = V -. V t rr - 7 ns I F = 9.A, dl/dt = A/µs (3) Q rr -. µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD 9.A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=5.mH, I AS=9.A, V DD=5V, R g =5Ω, Starting T J=5 C
,Drain Current [A] V gs =5.5V =6.V =6.5V =7.V =8.V =.V..,Drain-Source Voltage [V] Notes. 5 μs Pulse Test. T C =5 Fig. On-Region Characteristics R DS(ON) [Ω ].3....9.8.7 =.V.6 5 5,Drain Current [A] =V Fig. On-Resistance Variation with Drain Current and Gate Voltage.8. R DS(ON), (Normalized) Drain-Source On-Resistance.6....8. = V. = 5 A =V =.5V BS, (Normalized) Drain-Source Breakdown Voltage...9. = V. = 5 μa.6-5 -5 5 5 75 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with.8-5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. =3V. = V. = 5 μa [A] 5 5-55 R Reverse Drain Current [A] 5 5 5 6 7 8 [V] Fig.5 Transfer Characteristics.....6.8....6 V SD, Source-Drain Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and 3
, Gate-Source Voltage [V] 8 6 Note : I = 9.A D 6 8 6 8 Q G, Total Gate Charge [nc] Fig.7 Gate Charge Characteristics V 5V V Capacitance [pf] 8 6 C oss C iss C rss., Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. = V. f = MHz Fig.8 Capacitance Characteristics, Drain Current [A] - Operation in This Area is Limited by R DS(on) Single Pulse T J =Max rated T C =5 ms DC ms µs µs ms, Drain Current [A] 8 6 - -, Drain-Source Voltage [V] 5 5 75 5 5 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case Z θ JC (t), Normalized Thermal Response - - D=.5...5.. single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3.3 /W -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve Power (W) single Pulse R thjc = 3.3 /W T C = 5 8 6 E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation
Physical Dimension 3 Leads, TO-F Dimensions are in millimeters unless otherwise specified 5