New Product SUP/SUB75P5-8 P-Channel 55-V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) I D (A) 55.8 75 a TO-22AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P5-8 G D S Top View SUB75P5-8 D P-Channel MOSFET Parameter Symbol Limit Unit Drain-Source Voltage V DS 55 Gate-Source Voltage V GS 2 Continuous Drain Current T C = 25 C 75 a I (T J = 75 C) D T C = 5 C 47 Pulsed Drain Current I DM 24 V A Avalanche Current I AR 75 Repetitive Avalanche Energy b L =. mh E AR 28 mj Power Dissipation T C = 25 C (TO-22AB and TO-263) 25 d P D W T A = 25 C (TO-263) c 3.7 Operating Junction and Storage Temperature Range T J, T stg 55 to 75 C Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount (TO-263) c R thja 4 Free Air (TO-22AB) R thja 62.5 C/W Junction-to-Case R thjc.6 Notes: a. Package limited. b. Duty cycle %. c. When mounted on square PCB (FR-4 material). d. See SOA curve for voltage derating. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 789 S-9944 Rev. B, 29-Nov-99 www.vishay.com FaxBack 48-97-56 2-
SUP/SUB75P5-8 New Product Static Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25 A 55 Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 A 2 3 V Gate-Body Leakage I GSS V DS = V, V GS = 2 V na V DS = 44 V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = 44 V, V GS = V, T J = 25 C 5 V DS = 44 V, V GS = V, T J = 75 C 7 On-State Drain Current a I D(on) V DS = 5 V, V GS = V 2 A V GS = V, I D = 3 A.8 Drain-Source On-State Resistance a r DS(on) V GS = 4.5 V, I D = 2 A.3 V GS = V, I D = 3 A, T J = 25 C.4 V GS = V, I D = 3 A, T J = 75 C.6 Forward Transconductance a g fs V DS = 5 V, I D = 3 A 75 S Dynamic b Input Capacitance C iss 85 Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 22 pf Reversen Transfer Capacitance C rss 95 Total Gate Charge c Q g 4 225 Gate-Source Charge c Q gs V DS = 3 V, V GS = V, I D = 75 A 3 nc Gate-Drain Charge c Q gd 3 Turn-On Delay Time c t d(on) 3 2 Rise Time c t r VDD = 3 V, R L =.47 4 225 Turn-Off Delay Time c t d(off) I D 75 A, V GEN = V, R G = 2.5 5 85 Fall Time c t f 75 3 ns Source-Drain Diode Ratings and Characteristics (T C = 25 C) b Continuous Current I s 75 Pulsed Current I SM 24 Forward Voltage a V SD I F = 75 A, V GS = V..3 V Reverse Recovery Time t rr 6 2 ns Peak Reverse Recovery Current I RM(REC) I F = 75 A, di/dt = A/ s 2.2 3.5 A Reverse Recovery Charge Q rr.76.2 C Notes: a. Pulse test; pulse width 3 s, duty cycle 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. A www.vishay.com FaxBack 48-97-56 2-2 Document Number: 789 S-9944 Rev. B, 29-Nov-99
New Product SUP/SUB75P5-8 25 2 Output Characteristics V GS = thru 7 V 6 V 5 V 2 6 Transfer Characteristics T C = 55 C 25 C 5 4 V 2 8 25 C I D 5 I D 4 3 V 2 4 6 8 V DS Drain-to-Source Voltage (V) 2 3 4 5 6 V GS Gate-to-Source Voltage (V) 2 Transconductance.6 On-Resistance vs. Drain Current C Capacitance (pf) g fs Transconductance (S) T C = 55 C 25 C 9 25 C 6 3 2 4 6 8 I D Capacitance 2 C iss 8 6 4 2 C oss C rss 22 33 44 55 V DS Drain-to-Source Voltage (V) Gate-to-Source Voltage (V) rds(on) On-Resistance ( ) V GS.5.4.3.2. 2 4 6 8 2 2 6 2 8 4 V DS = 3 V I D = 75 A V GS = 4.5 V I D Gate Charge 5 5 2 25 3 Q g Total Gate Charge (nc) V GS = V Document Number: 789 S-9944 Rev. B, 29-Nov-99 www.vishay.com FaxBack 48-97-56 2-3
SUP/SUB75P5-8 New Product 2. On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage rds(on) On-Resistance ( ) (Normalized).6.2.8.4 V GS = V I D = 3 A Source Current (A) I S T J = 5 C T J = 25 C 5 25 25 5 75 25 5 75 T J Junction Temperature ( C) V SD Source-to-Drain Voltage (V) Avalanche Current vs. Time 7 Drain Source Breakdown vs. Junction Temperature 65 I D = 25 A (a) I Dav I AV (A) @ T J = 25 C V(BR)DSS (V) 6 55 I AV (A) @ T J = 5 C 5 45...... t in (Sec) 4 5 25 25 5 75 25 5 75 T J Junction Temperature ( C) www.vishay.com FaxBack 48-97-56 2-4 Document Number: 789 S-9944 Rev. B, 29-Nov-99
New Product SUP/SUB75P5-8 9 Maximum Avalanche and Drain Current vs. Case Temperature 5 Safe Operating Area ID 75 6 45 3 5 I D Limited by r DS(on) T C = 25 C Single Pulse s s ms ms ms dc 25 5 75 25 5 75 T C Case Temperature ( C). V DS Drain-to-Source Voltage (V) 2 Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. Duty Cycle =.5.2..5.2 Single Pulse. 5 4 3 2 Square Wave Pulse Duration (sec) 3 Document Number: 789 S-9944 Rev. B, 29-Nov-99 www.vishay.com FaxBack 48-97-56 2-5
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