Ordering number : ENN91 FW4 FW4 Features For motor drives, inverters. N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage contained in a single package. High-density mounting. Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS -- V Gate-to-Source Voltage VGSS ± ± V Drain Current (DC) ID 6 -- A Drain Current (PW 1s) ID duty cycle 1% --. A Drain Current (PW 1ms) ID duty cycle 1% 1 --9 A Drain Current (PW 1µs) IDP duty cycle 1% 4 -- A Allowable Power Dissipation PD Mounted on a ceramic board (1mm.8mm)1unit, PW 1s 1.8 W Total Dissipation PT Mounted on a ceramic board (1mm.8mm), PW 1s. W Channel Temperature Tch 1 C Storage Temperature Tstg -- to +1 C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS= V Zero-Gate Voltage Drain Current IDSS VDS=V, VGS= 1 µa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS= ±1 µa Cutoff Voltage VGS(off) VDS=1V, ID=1mA 1..6 V Forward Transfer Admittance yfs VDS=1V, ID=6A 4.6.8 S RDS(on)1 ID=6A, VGS=1V mω On-State Resistance RDS(on) ID=A, VGS=4.V 49 mω RDS(on) ID=A, VGS=4V mω Marking : W4 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-1, 1 Chome, Ueno, Taito-ku, TOKYO, 11-84 JAPAN D4 TS IM TA-1119 No.91-1/6
FW4 Continued from preceding page. Parameter Symbol Conditions Ratings min typ max Unit Input Capacitance Ciss VDS=1V, f=1mhz 8 pf Output Capacitance Coss VDS=1V, f=1mhz 1 pf Reverse Transfer Capacitance Crss VDS=1V, f=1mhz 1 pf Turn-ON Delay Time td(on) See specified Test Circuit. 1. ns Rise Time tr See specified Test Circuit. 18 ns Turn-OFF Delay Time td(off) See specified Test Circuit. ns Fall Time tf See specified Test Circuit. 61 ns Total Gate Charge Qg VDS=1V, VGS=1V, ID=6A 16 nc Gate-to-Source Charge Qgs VDS=1V, VGS=1V, ID=6A.4 nc Gate-to-Drain Miller Charge Qgd VDS=1V, VGS=1V, ID=6A.4 nc Diode Forward Voltage VSD IS=6A, VGS=.84 1. V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID= -1mA, VGS= -- V Zero-Gate Voltage Drain Current IDSS VDS= -V, VGS= --1 µa Gate-to-Source Leakage Current IGSS VGS=±16V, VDS= ±1 µa Cutoff Voltage VGS(off) VDS= -1V, ID=--1mA --1. --.6 V Forward Transfer Admittance yfs VDS= -1V, ID= -A 4.. S RDS(on)1 ID= -A, VGS= -1V 41 mω On-State Resistance RDS(on) ID= -A, VGS= -4.V 6 8 mω RDS(on) ID= -A, VGS= -4V 98 mω Input Capacitance Ciss VDS= -1V, f=1mhz 1 pf Output Capacitance Coss VDS= -1V, f=1mhz 19 pf Reverse Transfer Capacitance Crss VDS= -1V, f=1mhz 1 pf Turn-ON Delay Time td(on) See specified Test Circuit. 1 ns Rise Time tr See specified Test Circuit. 8 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 8 ns Fall Time tf See specified Test Circuit. ns Total Gate Charge Qg VDS= -1V, VGS=--1V, ID= -A 16. nc Gate-to-Source Charge Qgs VDS= -1V, VGS=--1V, ID= -A. nc Gate-to-Drain Miller Charge Qgd VDS= -1V, VGS=--1V, ID= -A. nc Diode Forward Voltage VSD IS=--A, VGS= -.8 --1. V Package Dimensions unit : mm 19 Electrical Connection 8 1 4. 1. 1.8max 4.4. 6.. 1 : Source1 : Gate1 : Source 4 : Gate : Drain 6 : Drain : Drain1 8 : Drain1 8 6 1 : Source1 : Gate1 : Source 4 : Gate : Drain 6 : Drain : Drain1 8 : Drain1 1 4 Top view.9 1..4.1 SANYO : SOP8 No.91-/6
FW4 Switching Time Test Circuit [N-channel] [P-channel] 1V V VDD=1V ID=6A RL=.Ω V --1V VDD= --1V ID= --A RL=Ω PW=1µs D.C. 1% D VOUT PW=1µs D.C. 1% D VOUT G G P.G Ω S FW4 P.G Ω S FW4 6.. 1.V 4.V.V ID -- VDS.V 6.. V DS =1V ID -- VGS 4... 1. 6.V 4.V VGS=.V 4... 1. C Ta= C -- C On-State Resistance, R DS (on) -- mω 1 9 8 6 4 1.1...4..6..8.9 1. Drain-to-Source Voltage, V DS -- V IT8 RDS(on) -- VGS Ta= C I D =6A I D =A On-State Resistance, R DS (on) -- mω. 1. 1..... 4. Gate-to-Source Voltage, V GS -- V IT81 RDS(on) -- Ta 6 4 1 I D =A, V GS =4V I D =A, V GS =4.V ID=6A, V GS =1V 1 4 6 8 1 1 14 16 --6 --4 -- 4 6 8 1 1 14 16 Gate-to-Source Voltage, V GS -- V IT8 Ambient Temperature, Ta -- C IT8 No.91-/6
FW4 Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns Gate-to-Source Voltage, V GS -- V 1 1 1 1..1 1. 1 IT86 VGS -- Qg 1 V DS =1V 9 I D =6A 8 6 4 1 --. --4. --. --. --1..1 V DS =1V 4 6 8 1 1 14 16 18 Total Gate Charge, Qg -- nc IT88 --6.V --1.V Ta= C -- C C SW Time -- ID --4.V yfs -- ID td(off) tf tr ID -- VDS --.V --4.V t d (on) VDD=1V VGS=1V --.V V GS = --.V 1. 1 IT84 Forward Current, I F -- A Ciss, Coss, Crss -- pf 1 1..1.1 1 1 1 1 1 1..1 -- V DS = --1V --4 -- -- --1 IDP=4A ID=6A. Diode Forward Voltage, V SD -- V IT8 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss Drain-to-Source Voltage, V DS -- V A S O Operation in this area is limited by R DS (on). IF -- VSD Ta= C C.4.6.8 1. 1. DC operation 1ms 1ms Drain-to-Source Voltage, V DS -- V ID -- VGS IT8 Ta= C Single pulse.1 Mounted on a ceramic board (1mm.8mm) 1unit.1 1. 1 C Ta= C -- C 1s -- C 1µs 1µs 1ms V GS = IT89 --.1 --. --. --.4 --. --.6 --. --.8 --.9 --1. Drain-to-Source Voltage, VDS -- V IT9 --. --1. --1. --. --. --. --. --4. Gate-to-Source Voltage, V GS -- V IT91 No.91-4/6
FW4 On-State Resistance, RDS(on) -- mω 14 1 1 8 6 4 ID= --A ID= --A RDS(on) -- VGS Ta= C On-State Resistance, RDS(on) -- mω 14 1 1 8 6 4 RDS(on) -- Ta ID= --A, V GS = --4V ID= --A, V GS = --4.V ID= --A, VGS= --1V Forward Transfer Admittance, yfs -- S Switching Time, SW Time -- ns Gate-to-Source Voltage, VGS -- V 1 V DS = --1V 1. 1 -- --4 --6 --8 --.1 --1. --1 IT94 1 SW Time -- ID --.1 --1. --1 IT96 VGS -- Qg --1 V DS = --1V --9 I D = --A --8 -- --6 -- --4 -- -- --1 VDD= --1V VGS= --1V Gate-to-Source Voltage, V GS -- V yfs -- ID Ta= -- C C C td(off) tf tr t d (on) --1 --1 --14 --16 4 6 8 1 1 14 16 18 Total Gate Charge, Qg -- nc IT98 IT9 Ambient Temperature, Ta -- C IF -- VSD Forward Current, IF -- A Ciss, Coss, Crss -- pf Drain Current, ID -- A --1 --1. --.1 --.1 --. 1 1 --1 --1. --6 --4 -- 4 6 8 1 1 14 16 IDP = --A ID= --A Ta= C C -- C --.4 --.6 --.8 --1. --1. Diode Forward Voltage, V SD -- V IT9 Ciss, Coss, Crss -- VDS f=1mhz Ciss Coss Crss -- --1 --1 -- -- -- Drain-to-Source Voltage, V DS -- V IT9 Operation in this area is limited by R DS (on). A S O 1ms 1s DC operation 1ms 1ms 1µs 1µs IT9 V GS = --.1 Ta= C Single pulse Mounted on a ceramic board (1mm --.1.8mm) 1unit --.1 --1. --1 Drain-to-Source Voltage, V DS -- V IT99 No.91-/6
FW4 Allowable Power Dissipation(FET 1), P D -- W.. 1.8 1.6 1.4 1. 1..8.6.4. PD(FET 1) -- PD(FET ) [Nch, Pch] Mounted on a ceramic board (1mm.8mm), PW 1s..4.6.8 1. 1. 1.4 1.6 1.8.. Allowable Power Dissipation(FET ), P D -- W IT4 Allowable Power Dissipation, P D -- W... 1.8 1. 1.. PD -- Ta 4 6 8 1 1 Ambient Temperature, Ta -- C [Nch, Pch] Mounted on a ceramic board (1mm.8mm), PW 1s Total dissipation 1unit 14 16 IT41 Note on usage : Since the FW4 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 4. Specifications and information herein are subject to change without notice. PS No.91-6/6