FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

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Transcription:

SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users are provided with high Hfe and very low sat performance ensuring low on state losses. SOT23 FEATURES Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage h FE characterised up to 3.0A I C =1.5A Continuous Collector Current SOT23 package APPLICATIONS DC - DC Modules Power Management Functions CCFL Backlighting Inverters Motor control and drive functions ORDERING INFORMATION C E B DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View FMMT620TA 7 8mm embossed 3000 units FMMT620TC 13 8mm embossed 10000 units DEVICE MARKING 620 1

ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Collector-Base Voltage V CBO 80 V Collector-Emitter Voltage V CEO 80 V Emitter-Base Voltage V EBO 5 V Peak Pulse Current I CM 5 A Continuous Collector Current I C 1.5 A Base Current I B 500 ma Power Dissipation at TA=25 C (a) Linear Derating Factor Power Dissipation at TA=25 C (b) Linear Derating Factor P D 625 5 P D 806 6.4 mw mw/ C mw mw/ C Operating and Storage Temperature Range T j :T stg -55 to +150 C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θja 200 C/W Junction to Ambient (b) R θja 155 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. 2

TYPICAL CHARACTERISTICS FMMT620 I C Collector Current (A) 10 1 100m DC 1s 100ms 10ms 1ms 100µs Single Pulse T amb =25 C 10m 100m 1 10 100 V CE Collector-Emitter Voltage (V) Safe Operating Area Max Power Dissipation (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 140 160 Temperature ( C) Derating Curve Thermal Resistance ( C/W) 200 150 D=0.5 100 50 D=0.2 Single Pulse D=0.05 D=0.1 0 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance 3

ELECTRICAL CHARACTERISTICS (at T amb = 25 C unless otherwise stated) PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V (BR)CBO 100 180 V I C =100 A V (BR)CEO 80 110 V I C =10mA* Emitter-Base Breakdown Voltage V (BR)EBO 7 8 V I E =100 A Collector Cut-Off Current I CBO 100 na V CB =80V Emitter Cut-Off Current I EBO 100 na V EB =5.5V Collector Emitter Cut-Off Current I CES 100 na V CES =80V Collector-Emitter Saturation Voltage V CE(sat) 15 45 145 160 20 60 185 200 I C =0.1A, I B =10mA* I C =0.5A, I B =50mA* I C =1A, I B =20mA* I C =1.5A, I B =50mA* Base-Emitter Saturation Voltage V BE(sat) 0.86 1.0 V I C =1.5A, I B =50mA* Base-Emitter Turn-On Voltage V BE(on) 0.82 0.95 V I C =1.5A, V CE =2V* Static Forward Current Transfer Ratio h FE 200 300 110 60 20 450 450 170 90 30 10 900 I C =10mA, V CE =2V* I C =200mA, V CE =2V* I C =1A, V CE =2V* I C =1.5A, V CE =2V* I C =3A, V CE =2V* I C =5A, V CE =2V* Transition Frequency f T 100 160 MHz I C =50mA, V CE =10V f=100mhz Output Capacitance C obo 11.5 18 pf V CB =10V, f=1mhz Turn-On Time t (on) 86 ns V CC =10V, I C =500mA I B1 =I B2 =25mA Turn-Off Time t (off) 1128 ns *Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2% 4

TYPICAL CHARACTERISTICS FMMT620 5

PACKAGE DIMENSIONS PAD LAYOUT DETAILS PACKAGE DIMENSIONS Millimeters Inches Millimeters Inches DIM Min Max Min Max DIM Min Max Max Max A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020 B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004 C 1.10 0.043 L 2.10 2.50 0.083 0.0985 D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025 F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM G 1.90 NOM 0.075 NOM Zetex Semiconductors plc 2006 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 6