dvanced Power Electronics Corp P76I--HF Halogen-Free Product N-CHNNEL ENHNCEMENT MODE POWER MOSFET % valanche Test D BV DSS 65V Fast Switching Characteristic R DS(ON) Ω Simple Drive Requirement I D G RoHS Compliant S Description P76 series are from dvanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance It provides the designer with an extreme efficient device for use in a wide range of power applications The TO-CFM package is widely preferred for all commercialindustrial through hole applications The mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink bsolute Maximum Ratings G D S TO-CFM(I) Symbol Parameter Rating Units V DS Drain-Source Voltage 65 V V GS Gate-Source Voltage +3 V I D @T C =5 Continuous Drain Current, V GS @ V I D @T C = Continuous Drain Current, V GS @ V 6 I DM Pulsed Drain Current 36 P D @T C =5 Total Power Dissipation 37 W E S Single Pulse valanche Energy 65 mj I R valanche Current T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 3 /W Rthj-a Maximum Thermal Resistance, Junction-ambient 65 /W Data & specifications subject to change without notice 5
P76I--HF Electrical Characteristics@T j =5 o C(unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Units BV DSS Drain-Source Breakdown Voltage V GS =V, I D =m 65 - - V R DS(ON) Static Drain-Source On-Resistance 3 V GS =V, I D =5 - - Ω V GS(th) Gate Threshold Voltage V DS =V GS, I D =5u - V g fs Forward Transconductance V DS =V, I D =5 - - S I DSS Drain-Source Leakage Current V DS =6V, V GS =V - - u I GSS Gate-Source Leakage V GS = +3V, V DS =V - - + n Q g Total Gate Charge I D = - 53 - nc Q gs Gate-Source Charge V DS =5V - - nc Q gd Gate-Drain ("Miller") Charge V GS =V - 5 - nc t d(on) Turn-on Delay Time V DD =3V - 6 - ns t r Rise Time I D = - - ns t d(off) Turn-off Delay Time R G =Ω - - ns t f Fall Time V GS =V - 36 - ns C iss Input Capacitance V GS =V - 75 - pf C oss Output Capacitance V DS =5V - 6 - pf C rss Reverse Transfer Capacitance f=mhz - 6 - pf Source-Drain Diode Symbol Parameter Test Conditions Min Typ Max Units V SD Forward On Voltage 3 I S =, V GS =V - - 5 V t rr Reverse Recovery Time I S =, V GS =V, - 6 - ns Q rr Reverse Recovery Charge di/dt=/µs - 6 - µc Notes: Pulse width limited by max junction temperature Starting T j =5 o C, V DD =5V, L=mH, R G =5Ω, I S = 3Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTTIC DISCHRGE, PLESE HNDLE WITH CUTION USE OF THIS PRODUCT S CRITICL COMPONENT IN LIFE SUPPORT OR OTHER SIMILR SYSTEMS IS NOT UTHORIZED PEC DOES NOT SSUME NY LIBILITY RISING OUT OF THE PPLICTION OR USE OF NY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY NY LICENSE UNDER ITS PTENT RIGHTS, NOR THE RIGHTS OF OTHERS PEC RESERVES THE RIGHT TO MKE CHNGES WITHOUT FURTHER NOTICE TO NY PRODUCTS HEREIN TO IMPROVE RELIBILITY, FUNCTION OR DESIGN
P76I--HF 6 I D, Drain Current () T C =5 o C V 7V 6V 5V V GS =V I D, Drain Current () 6 T C =5 o C V 7V 6V 5V V GS =V 6 6 3 Fig Typical Output Characteristics Fig Typical Output Characteristics 3 I D =5 V G =V Normalized BV DSS Normalized R DS(ON) 9-5 5 5-5 5 5 T j, Junction Temperature ( o C) T j, Junction Temperature ( o C ) Fig 3 Normalized BV DSS vs Junction Fig Normalized On-Resistance Temperature vs Junction Temperature 5 3 I S () 6 T j = 5 o C T j = 5 o C Normalized V GS(th) 9 7 6 V SD, Source-to-Drain Voltage (V) 5-5 5 5 T j, Junction Temperature ( o C) Fig 5 Forward Characteristic of Fig 6 Gate Threshold Voltage vs Reverse Diode Junction Temperature 3
P76I--HF 6 I D = f=mhz V GS, Gate to Source Voltage (V) V DS =33V V DS =V V DS =5V C (pf) 3 C iss 6 Q G, Total Gate Charge (nc) C oss C rss 5 9 3 7 5 9 Fig 7 Gate Charge Characteristics Fig Typical Capacitance Characteristics Duty factor=5 I D () T c =5 o C Single Pulse us ms ms ms s DC Normalized Thermal Response (R thjc ) 5 Single Pulse P DM t T Duty factor = t/t Peak T j = P DM x R thjc + T C t, Pulse Width (s) Fig 9 Maximum Safe Operating rea Fig Effective Transient Thermal Impedance V DS 9% V G Q G V Q GS Q GD % V GS t d(on) t r t d(off) t f Charge Q Fig Switching Time Waveform Fig Gate Charge Waveform
MRKING INFORMTION P76I--HF 76I YWWSSS Part Number Option Package Code Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5