PD 9470F IRG4P50U INSULTED GTE BIPOLR TRNSISTOR UltraFast Speed IGBT Features UltraFast: Optimized for high operating frequencies 8-40 khz in hard switching, >200 khz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247 package G E n-channel V ES = 600V V E(on) typ. =.65V @V GE = 5V, I = 27 Benefits Generation 4 IGBT's offer highest efficiency available IGBT's optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings Thermal Resistance TO-247 Parameter Max. Units V ES ollector-to-emitter Breakdown Voltage 600 V I @ T = 25 ontinuous ollector urrent 55 I @ T = 00 ontinuous ollector urrent 27 I M Pulsed ollector urrent 220 I LM lamped Inductive Load urrent 220 V GE Gate-to-Emitter Voltage ± 20 V E RV Reverse Voltage valanche Energy ƒ 20 mj P D @ T = 25 Maximum Power Dissipation 200 P D @ T = 00 Maximum Power Dissipation 78 W T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for 0 seconds 300 (0.063 in. (.6mm from case ) Mounting torque, 6-32 or M3 screw. 0 lbf in (.N m) Parameter Typ. Max. Units R θj Junction-to-ase ---- 0.64 R θs ase-to-sink, Flat, Greased Surface 0.24 ---- /W R θj Junction-to-mbient, typical socket mount ---- 40 Wt Weight 6 (0.2) ---- g (oz) www.irf.com 2/30/00
IRG4P50U Electrical haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions V (BR)ES ollector-to-emitter Breakdown Voltage 600 ---- ---- V V GE = 0V, I = 250µ V (BR)ES Emitter-to-ollector Breakdown Voltage 8 ---- ---- V V GE = 0V, I =.0 V (BR)ES / T J Temperature oeff. of Breakdown Voltage ---- 0.60 ---- V/ V GE = 0V, I =.0m ----.65 2.0 I = 27 V GE = 5V V E(ON) ollector-to-emitter Saturation Voltage ---- 2.0 ---- I = 55 See Fig.2, 5 V ----.6 ---- I = 27, T J = 50 V GE(th) Gate Threshold Voltage 3.0 ---- 6.0 V E = V GE, I = 250µ V GE(th) / T J Temperature oeff. of Threshold Voltage ---- -3 ---- mv/ V E = V GE, I = 250µ g fe Forward Transconductance 6 24 ---- S V E 5V, I = 27 I ES Zero Gate Voltage ollector urrent ---- ---- 250 µ V GE = 0V, V E = 600V ---- ---- 2.0 V GE = 0V, V E = 0V, T J = 25 ---- ---- 5000 V GE = 0V, V E = 600V, T J = 50 I GES Gate-to-Emitter Leakage urrent ---- ---- ±00 n V GE = ±20V Switching haracteristics @ T J = 25 (unless otherwise specified) Parameter Min. Typ. Max. Units onditions Q g Total Gate harge (turn-on) ---- 80 270 I = 27 Q ge Gate - Emitter harge (turn-on) ---- 25 38 n V = 400V See Fig. 8 Q gc Gate - ollector harge (turn-on) ---- 6 90 V GE = 5V t d(on) Turn-On Delay Time ---- 32 ---- t r Rise Time ---- 20 ---- T J = 25 ns t d(off) Turn-Off Delay Time ---- 70 260 I = 27, V = 480V t f Fall Time ---- 88 30 V GE = 5V, R G = 5.0Ω E on Turn-On Switching Loss ---- 0.2 ---- Energy losses include "tail" E off Turn-Off Switching Loss ---- 0.54 ---- mj See Fig. 0,, 3, 4 E ts Total Switching Loss ---- 0.66 0.9 t d(on) Turn-On Delay Time ---- 3 ---- T J = 50, t r Rise Time ---- 23 ---- I = 27, V = 480V ns t d(off) Turn-Off Delay Time ---- 230 ---- V GE = 5V, R G = 5.0Ω t f Fall Time ---- 20 ---- Energy losses include "tail" E ts Total Switching Loss ----.6 ---- mj See Fig. 3, 4 L E Internal Emitter Inductance ---- 3 ---- nh Measured 5mm from package ies Input apacitance ---- 4000 ---- V GE = 0V oes Output apacitance ---- 250 ---- pf V = 30V See Fig. 7 res Reverse Transfer apacitance ---- 52 ---- ƒ =.0MHz Notes: Repetitive rating; V GE = 20V, pulse width limited by max. junction temperature. ( See fig. 3b ) V = 80%(V ES ), V GE = 20V, L = 0µH, R G = 5.0Ω, (See fig. 3a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80µs; duty factor 0.%. Pulse width 5.0µs, single shot. 2 www.irf.com
IRG4P50U 80 Load urrent () 60 40 Square wave: 60% of rated voltage For both: Duty cycle: 50% T J = 25 T sink = 90 Gate drive as specified Power Dissipation = 40W Triangular wave: lamp voltage: 80% of rated 20 Ideal diodes 0 0. 0 00 f, Frequency (khz) Fig. - Typical Load urrent vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK ) I, ollector-to-emitter urrent () 000 00 0 T J = 50 T J = 25 V GE = 5V 20µ s PULSE W IDTH 0. 0 0 V E, ollector-to-emitter Voltag e (V ) I, ollector-to-emitter urrent () 000 00 0 T J = 50 T J = 25 V = 0V 5µs PULSE WIDTH 4 6 8 0 2 V GE, Gate-to-Emitter Voltage (V ) Fig. 2 - Typical Output haracteristics Fig. 3 - Typical Transfer haracteristics www.irf.com 3
IRG4P50U Maximum D ollector urrent () 60 50 40 30 20 0 V GE = 5V V E, ollector-to-emitter Voltage (V) 2.5 2.0.5 V GE = 5V 80µs PULSE WIDTH I I I = 54 = 27 = 4 0 25 50 75 00 25 50 T, ase Temperature ( ) Fig. 4 - Maximum ollector urrent vs. ase Temperature.0-60 -40-20 0 20 40 60 80 00 20 40 60 T, Junction Temperature ( ) J Fig. 5 - ollector-to-emitter Voltage vs. Junction Temperature Thermal Response (Z thj ) 0. D = 0.50 0.20 0.0 0.05 0.02 0.0 SIN GLE PU LS E (THERML RESPONSE) 2. Peak T J = P DM x Z thj + T 0.0 0.0000 0.000 0.00 0.0 0. 0 t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-ase 4 www.irf.com
IRG4P50U, apacitance (pf) 8000 6000 4000 2000 V GE = 0V, f = M Hz ies = ge + gc, ce SH ORTED res = gc oes = c e + gc ie s oes res V GE, Gate-to-Emitter Voltage (V) 20 6 2 8 4 V E I = 400V = 27 0 0 00 V E, ollector-to-emitter Voltage (V ) 0 0 40 80 20 60 200 Q g, Total Gate harge (n) Fig. 7 - Typical apacitance vs. ollector-to-emitter Voltage Fig. 8 - Typical Gate harge vs. Gate-to-Emitter Voltage Total Switching Losses (mj) 2.2 2.0.8.6.4.2.0 V = 480V V GE = 5V T J = 25 I = 27 Total Switching Losses (mj) 0 R V V G GE = 5.0 Ω = 5V = 480V I I I = 54 = 27 = 4 0.8 0.6 0 0 20 30 40 50 60 R G, Gate Resistance ( Ω) 0. -60-40 -20 0 20 40 60 80 00 20 40 60 T, Junction Temperature ( ) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 0 - Typical Switching Losses vs. Junction Temperature www.irf.com 5
IRG4P50U Total Switching Losses (mj) 3.0 2.0.0 R G = 5.0Ω T J = 50 V = 480V V GE = 5V I, ollector-to-emitter urrent () 000 00 0 V GE = 20V T = 25 J SFE OPERTING RE 0.0 0 0 20 30 40 50 I, ollector-to-emitter urrent ( ) 0 00 000 V E, ollector-to-emitter Voltage (V) Fig. - Typical Switching Losses vs. ollector-to-emitter urrent Fig. 2 - Turn-Off SO 6 www.irf.com
IRG4P50U 50V 000V L V * D.U.T. 0-480V 480µF 960V R L = 480V 4 X I @25 * Driver same ty pe as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor w ill increase to obtain rated Id. Fig. 3a - lamped Inductive Load Test ircuit Fig. 3b - Pulsed ollector urrent Test ircuit I 50V 000V L Driver* D.U.T. V ƒ Fig. 4a - Switching Loss Test ircuit * Driver same type as D.U.T., V = 480V 90% ƒ 0% V 90% t d(off) Fig. 4b - Switching Loss Waveforms I 5% 0% t d(on) t r E on E ts = (E on +E off ) www.irf.com 7 t f E off t=5µs
IRG4P50U ase Outline and Dimensions TO-247 * 20.30 (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2.40 (.094) 2.00 (.079) 2X 5.45 (.25) 2X 5.90 (.626) 5.30 (.602) - B - 2 3.40 (.056) 3X.00 (.039) 0.25 (.00) M S 3.40 (.33) 3.00 (.8) 3.65 (.43) 3.55 (.40) 0.25 (.00) M D - - 5.50 (.27) 2X - - 4.30 (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) B M - D - 5.30 (.209) 4.70 (.85) 2.50 (.089).50 (.059) 4 0.80 (.03) 3X 0.40 (.06) 2.60 (.02) 2.20 (.087) NOTES: DIMENSIONS & TOLERNING PER NSI Y4.5M, 982. 2 ONTROLLING DIMENSION : INH. 3 DIM ENSIONS RE SHO W N M ILLIM ETER S (INHES). 4 O NFO RM S TO JEDE O UTLINE TO-247. LED SSIGNMENTS - GTE 2 - OLLETO R 3 - EM ITTER 4 - OLLETO R * LONGER LEDED (20mm) VERSION VILBLE (TO-247D) TO ORDER DD "-E" SUFFIX TO PRT NUMBER ONFORMS TO JEDE OUTLINE TO-247 (TO-3P) Dimensions in Millimeters and (Inches) IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, alifornia 90245, US Tel: (30) 252-705 T Fax: (30) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 2/00 8 www.irf.com
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