Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 8 Volts 3 A Surge Current Capability PbFree Packages are Available* SCRs 25 AMPERES RMS 5 thru 8 VOLTS A G K MARKING DIAGRAM 4 CASE 22A STYLE 3 2N65xG AYWW 2 3 x = 4, 5, 7, 8 or 9 A = Assembly Location Y = Year WW = Work Week G = PbFree Device PIN ASSIGNMENT Cathode 2 Anode 3 Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 26 February, 26 Rev. 7 Publication Order Number: 2N654/D
MAXIMUM RATINGS (T J = 25 C unless otherwise noted) *Peak Repetitive OffState Voltage (Note ) (Gate Open, Sine Wave 5 to 6 Hz, T J = 25 to 25 C) 2N654 2N655 2N657 2N658 2N659 Rating Symbol Value Unit V DRM, V RRM 5 4 6 8 On-State Current RMS (8 Conduction Angles; T C = 85 C) I T(RMS) 25 A Average On-State Current (8 Conduction Angles; T C = 85 C) I T(AV) 6 A Peak Non-repetitive Surge Current (/2 Cycle, Sine Wave 6 Hz, T J = C) I TSM 25 A Forward Peak Gate Power (Pulse Width. s, T C = 85 C) P GM 2 W Forward Average Gate Power (t = 8.3 ms, T C = 85 C) P G(AV).5 W Forward Peak Gate Current (Pulse Width. s, T C = 85 C) I GM 2. A Operating Junction Temperature Range T J 4 to +25 C Storage Temperature Range T stg 4 to +5 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase R JC.5 C/W *Maximum Lead Temperature for Soldering Purposes /8 in from Case for Seconds T L 26 C V ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, Gate Open) T J = 25 C T J = 25 C ON CHARACTERISTICS Characteristic Symbol Min Typ Max Unit * Forward OnState Voltage (Note 2) (I TM = 5 A) V TM.8 V * Gate Trigger Current (Continuous dc) T C = 25 C (V AK = 2 Vdc, R L = ) TC = 4 C * Gate Trigger Voltage (Continuous dc) (V AK = 2 Vdc, R L =, T C = 4 C) V GT..5 V Gate Non-Trigger Voltage (V AK = 2 Vdc, R L =, T J = 25 C) V GD.2 V * Holding Current TC = 25 C (V AK = 2 Vdc, Initiating Current = 2 ma, Gate Open) T C = 4 C * Turn-On Time (I TM = 25 A, I GT = 5 madc) t gt.5 2. s Turn-Off Time (V DRM = rated voltage) (I TM = 25 A, I R = 25 A) (I TM = 25 A, I R = 25 A, T J = 25 C) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (Gate Open, Rated V DRM, Exponential Waveform) dv/dt 5 V/ s *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 3 s, Duty Cycle 2%. I DRM, I RRM I GT I H t q 9. 8 5 35 2. 3 75 4 8 A ma ma ma s 2
Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode T C, MAXIMUM CASE TEMPERATURE ( C) 3 2 9 α = 3 6 9 α = CONDUCTION ANGLE 8 α dc P (AV), AVERAGE POWER (WATTS) 32 24 6 8. α α = CONDUCTION ANGLE 6 α = 3 9 8 T J = 25 C dc 8 4. 8. 2 6 2 I T(AV), ON-STATE FORWARD CURRENT (AMPS) Figure. Average Current Derating 4. 8. 2 6 2 I T(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 2. Maximum OnState Power Dissipation 3
7 5 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 3 2 7. 5. 3. 2...7.5.3.2..4 25 C 25 C.8.2.6 2. 2.4 2.8 v F, INSTANTANEOUS VOLTAGE (VOLTS) I TSM, PEAK SURGE CURRENT (AMP) 3 275 25 225 2 75. T C = 85 C f = 6 Hz SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT CYCLE 2. 3. 4. 6. 8. NUMBER OF CYCLES r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)..7.5.3.2..7.5.3.2.. Figure 3. Typical OnState Characteristics Figure 4. Maximum NonRepetitive Surge Current Z JC(t) = R JC r(t).2.3.5. 2. 3. 5. 2 3 5 2 3 5. k 2. 3. k k 5. k k t, TIME (ms) Figure 5. Thermal Response 4
TYPICAL TRIGGER CHARACTERISTICS I GT, GATE TRIGGER CURRENT (ma), GATE TRIGGER VOLTAGE (VOLTS) VGT..9.8.7.6.5.4.3 4 25 5 2 35 5 65 8 T J, JUNCTION TEMPERATURE C) ( 95 25.2 4 25 5 2 35 5 65 8 T J, JUNCTION TEMPERATURE C) ( 95 25 Figure 6. Typical Gate Trigger Current versus Junction Temperature Figure 7. Typical Gate Trigger Voltage versus Junction Temperature I H, HOLDING CURRENT (ma) 4 25 5 2 35 5 65 8 T J, JUNCTION TEMPERATURE C) ( 95 25 Figure 8. Typical Holding Current versus Junction Temperature 5
ORDERING INFORMATION 2N654 2N654G 2N655 2N655G 2N655T 2N655TG 2N657 2N657G 2N657T 2N657TG 2N658 2N658G 2N659 2N659G 2N659T 2N659TG Device Package Shipping (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) 5 Units / Box 6
PACKAGE DIMENSIONS CASE 22A9 ISSUE AA H Q Z L V G B 4 2 3 N D A K F T U R J S C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.62 4.48 5.75 B.38.45 9.66.28 C.6.9 4.7 4.82 D.25.35.64.88 F.42.47 3.6 3.73 G.95.5 2.42 2.66 H..55 2.8 3.93 J.8.25.46.64 K.5.562 2.7 4.27 L.45.6.5.52 N.9.2 4.83 5.33 Q..2 2.54 3.4 R.8. 2.4 2.79 S.45.55.5.39 T.235.255 5.97 6.47 U..5..27 V.45.5 Z.8 2.4 STYLE 3: PIN. CATHODE 2. ANODE 3. GATE 4. ANODE 7 2N654/D