MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800 Volts On State Current Rating of 6 Amperes RMS at 80 C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt 500 V/µs minimum at 25 C Minimizes Snubber Networks for Protection Industry Standard TO 220 Package High Commutating di/dt 9.0 A/ms minimum at 25 C Pin Out These Devices are Pb Free and are RoHS Compliant Functional Diagram MT2 G MT CASE 22A STYLE 4 Additional Information 2 Datasheet Resources Samples
Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note ) ( 40 to 25 C, Sine Wave, 50 to 60 Hz, Gate Open) MAC6D MAC6M MAC6N V DRM, 400 V RRM 600 800 V On-State RMS Current (Full Cycle Sine Wave, 50 to 60 Hz, T C = 80 C) I T (RMS) 6 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T J = 25 C) I TSM 50 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 93 A²sec Peak Gate Power (T C = +80 C, Pulse Width =.0 µs) P GM 20 W Average Gate Power (t = 8.3 ms, T C = 80 C) P G (AV) 0.5 W Operating Junction Temperature Range T J -40 to +25 C Storage Temperature Range T stg -40 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case (AC) Junction to Ambient R 8JC R 8JA 2.0 62.5 C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for 0 seconds T L 260 C
Electrical Characteristics - OFF (T J = 25 C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current = V DRM = V RRM ; Gate Open) T J = 25 C I DRM, - - 0.0 μa I RRM T J = 25 C - - 2.0 ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State Voltage (Note 2) (I TM = ±2 A Peak) V TM.2.6 V Gate Trigger Current (Continuous dc) = 2 V, R L = 00 Ω) Gate Trigger Voltage (Continuous dc) = 2 V, R L = 00 Ω) Latching Current = 24 V, I G = 35 ma) MT2(+), G(+) 0 6 50 I GT MT2(+), G( ) 0 8 50 MT2( ), G( ) 0 22 50 MT2(+), G(+) 0.5 0.75.5 V GT MT2(+), G( ) 0.5 0.72.5 MT2( ), G( ) 0.5 0.82.5 MT2(+), G(+) 33 50 I L MT2(+), G( ) 36 80 MT2( ), G( ) 33 50 ma V ma Holding Current = 2 V dc, Gate Open, Initiating Current = ±50 ma)) I H 20 50 ma Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current, See Figure 0. (VD = 400 V, ITM = 6.0 A, Commutating dv/dt = 24 V/µs, Gate Open, TJ = 25 C, f = 250 Hz, No Snubber) (di/dt)c 9.0 A/ms Critical Rate of Rise of Off-State Voltage = Rated V DRM, Exponential Waveform, Gate Open, T J = 25 C) dv/dt 600 V/µs
Voltage Current Characteristic of SCR Symbol Parameter +C urrent V DRM Peak Repetitive Forward Off State Voltage V TM Quadrant MainTerminal 2 + I DRM Peak Forward Blocking Current I RRM at V RRM on state I H V RRM I RRM V TM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage Quadrant 3 I H V TM off state +V oltage I DRM at V DRM I H Holding Current Quadrant Definitions for a Triac Quadrant II Quadrant I I Quadrant III Quadrant IV All polarities are referenced to MT. With in phase signals (using standard AC lines) quadrants I and III are used.
Figure. RMS Current Derating Figure 2. On-State Power Dissipation Figure 3. On State Characteristics Figure 4. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0. 0.0 0. 0 00 t, TIME (ms) 000 4 Figure 5. Hold Current Variation 40 I H, HOLD CURRENT (ma) MT2 NEGATIVE MT2 POSITIVE 5 T J, JUNCTION TEMPERATURE (ϒC)
Figure 6. Typical Holding Current vs Junction Temperature Figure 7. Gate Trigger Voltage vs Junction Temperature IGT, GATE TRIGGER CURRENT (ma) 00 Q2 Q Q3 V D = 2 V R L = 00 VGT, GATE TRIGGER VOLTAGE (VOLT) Q Q2 V D = 2 V R L = 00 Q3 0.5 T J, JUNCTION TEMPERATURE (ϒC) T J, JUNCTION TEMPERATURE (ϒC) Figure 8. Critical Rate of Rise of Off State Voltage (Exponential) Figure 9. Critical Rate of Rise of Commutating Voltage (V/s ) μ 5000 00 4K 3K 2K K V D = 800 Vpk T J = 25 C (dv/dt), CRITICAL RATE OF RISE OF (V/s μ ) c COMMUTATING VOLTAGE 0 T J = 25 C 00 C 75 C I TM V DRM t w f = 2 t w (di/dt) c = 6f I TM 000 0 0 00 000 R G, GATE TO MAIN TERMINAL RESISTANCE (OHMS) 0000 0 20 30 40 50 60 70 80 90 00 (di/dt) c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 0. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c L L N4007 200 V RMS ADJUST FOR I TM, 60 Hz V AC MEASURE I CHARGE TRIGGER CHARGE CONTROL C L TRIGGER CONTROL N94 5 MT2 G MT - + 200 V Note: Component values are for verification of rated (di/dt) c. See AN048 for additional information.
Dimensions Part Marking System SEATING PLANE B F T C S H Q Z L V G N 4 2 3 D A K U R J 2 3 CASE 22A STYLE 4 x= D, M, or N A= Assembly Location Y= Year WW = Work Week MAC6xG AYWW Pin Assignment Dim Inches Millimeters Min Max Min Max A 0.570 0.620 4.48 5.75 B 0.380 0.405 9.66 0.28 C 0.60 0.90 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.42 0.47 3.6 3.73 G 0.095 0.05 2.42 2.66 H 0.0 0.55 2.80 3.93 J 0.04 0.022 0.36 0.55 K 0.500 0.562 2.70 4.27 L 0.045 0.060.5.52 N 0.90 0.20 4.83 5.33 Q 0.00 0.20 2.54 3.04 R 0.080 0.0 2.04 2.79 S 0.045 0.055.5.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00.27 V 0.045.5 Z 0.080 2.04 Main Terminal 2 Main Terminal 2 3 Gate 4 Main Terminal 2 Ordering Information Device Package Shipping MAC6DG MAC6MG MAC6NG TO-220 (Pb-Free) 50 Units/ Rail. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, 982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics