Photodiode Detector with Signal Amplification XB8816R Series

Similar documents
Linear X-Ray Photodiode Detector Array with Signal Amplification

Photodiode arrays with ampli er

Photodiode arrays with amplifiers

Photodiode arrays with amplifier

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers

Photodiode arrays with amplifiers

TSL LINEAR SENSOR ARRAY

ams AG TAOS Inc. is now The technical content of this TAOS datasheet is still valid. Contact information:

TSL1406R, TSL1406RS LINEAR SENSOR ARRAY WITH HOLD

functional block diagram (each section pin numbers apply to section 1)

Current Output/Serial Input, 16-Bit DAC AD5543-EP

Programmable Low Voltage 1:10 LVDS Clock Driver ADN4670

Pixel. Pixel 3. The LUMENOLOGY Company Texas Advanced Optoelectronic Solutions Inc. 800 Jupiter Road, Suite 205 Plano, TX (972)

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR

ILX pixel CCD Linear Image Sensor (B/W)

Micropower Precision CMOS Operational Amplifier AD8500

CMOS linear image sensor

Triple, 6-Channel LCD Timing Delay-Locked Loop AD8389

Contact Image Sensor (CIS) Module

Triple, 6-Channel LCD Timing Delay-Locked Loop AD8389 PRODUCT FEATURES High speed Up to 85 MHz clock rate Triple (R, G, B) output Matched delay lines

S-8604BWI LINEAR IMAGE SENSOR IC FOR CONTACT IMAGE SENSOR. Rev.1.1_10

LINEAR IMAGE SENSOR IC FOR CIS

CMOS, 170 MHz, Triple, 10-Bit High Speed Video DAC ADV7123-EP

NT Output LCD Segment/Common Driver NT7703. Features. General Description. Pin Configuration 1 V1.0

Dual Processor Supervisors with Watchdog ADM13305

Isolated, Frequency Input 5B45 / 5B46 FEATURES APPLICATIONS PRODUCT OVERVIEW FUNCTIONAL BLOCK DIAGRAM

Triple Processor Supervisors ADM13307

MM5452/MM5453 Liquid Crystal Display Drivers

AD864/AD8642/AD8643 TABLE OF CONTENTS Specifications... 3 Electrical Characteristics... 3 Absolute Maximum Ratings... 5 ESD Caution... 5 Typical Perfo

DL515-01UHB-D PRODUCT SPECIFICATION

Peripheral Imaging Corporation

TLV5620C, TLV5620I QUADRUPLE 8-BIT DIGITAL-TO-ANALOG CONVERTERS

ADC Bit µp Compatible A/D Converter

Single-Axis, High-g, imems Accelerometers ADXL193

8-bit shift register and latch driver

DATASHEET CD4027BMS. Features. Pinout. Functional Diagram. Applications. Description. CMOS Dual J-KMaster-Slave Flip-Flop. FN3302 Rev 0.

TL594C, TL594I, TL594Y PULSE-WIDTH-MODULATION CONTROL CIRCUITS

Preliminary TCD2704D. Features. Pin Connections (top view) Maximum Ratings (Note 1)

CMOS linear image sensor

OBSOLETE. Charge Pump Regulator for Color TFT Panel ADM8830

TLC5620C, TLC5620I QUADRUPLE 8-BIT DIGITAL-TO-ANALOG CONVERTERS

TOSHIBA CCD Linear Image Sensor CCD (charge coupled device) TCD2561D

Continuous Wave Laser Average Power Controller ADN2830

TSL201R LF 64 1 LINEAR SENSOR ARRAY

Ultrafast Comparators AD96685/AD96687

CCD525 Time Delay Integration Line Scan Sensor

TSL260, TSL261, TSL262 IR LIGHT-TO-VOLTAGE OPTICAL SENSORS

CMOS linear image sensors

ST8016. Datasheet. 160 Output LCD Common/ Segment Driver IC. Version /05/25. Crystalfontz

Rail-to-Rail, High Output Current Amplifier AD8397

DATASHEET CD4013BMS. Pinout. Features. Functional Diagram. Applications. Description. CMOS Dual D -Type Flip-Flop. FN3080 Rev 0.

Octal, 16-Bit DAC with 5 ppm/ C On-Chip Reference in 14-Lead TSSOP AD5668-EP

APPLICATION NOTE. Steffen Pahlke KETEK VITUS Silicon Drift Detector. KETEK VITUS Silicon Drift Detector (SDD) with new ultra low capacitance FET

INL PLOT REFIN DAC AMPLIFIER DAC REGISTER INPUT CONTROL LOGIC, REGISTERS AND LATCHES

. HIGH SPEED .LOW POWER DISSIPATION .HIGH NOISE IMMUNITY M54/M74HC4518 M54/M74HC4520 HC4518 DUAL DECADE COUNTER HC4520 DUAL 4 BIT BINARY COUNTER

OLI300: Miniature High-Speed Optocoupler for Hybrid Assembly

APPLICATIONS GENERAL DESCRIPTION FEATURES PIN CONFIGURATION PIN ASSIGNMENT /INH, Q0 PIN FUNCTION

TL594 PULSE-WIDTH-MODULATION CONTROL CIRCUITS

TL494C, TL494I, TL494M, TL494Y PULSE-WIDTH-MODULATION CONTROL CIRCUITS

Variable-Gain High Speed Current Amplifier

LC 2 MOS Quad SPST Switches ADG441/ADG442/ADG444

TSL1401R LF LINEAR SENSOR ARRAY WITH HOLD

TSL1401R LF LINEAR SENSOR ARRAY WITH HOLD

Octal, RS-232/RS-423 Line Driver ADM5170

TL5632C 8-BIT 3-CHANNEL HIGH-SPEED DIGITAL-TO-ANALOG CONVERTER

MOS INTEGRATED CIRCUIT

AD9512-EP. 1.2 GHz Clock Distribution IC, 1.6 GHz Inputs, Dividers, Five Outputs. Enhanced Product FEATURES FUNCTIONAL BLOCK DIAGRAM

Features V DD 4 STROBE MOS. Bipolar. Sub 8 GND V EE OUT 8

Octal, RS-232/RS-423 Line Driver ADM5170

5-BIT REGISTERED TRANSCEIVER

S-8603 AWI. Rev.1.0_20 LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR. Circuit diagram

Dual, Ultralow Distortion, Ultralow Noise Op Amp AD8599

DECODER I/O DATA CONTROL CIRCUIT

SN54HC377, SN74HC377 OCTAL D-TYPE FLIP-FLOPS WITH CLOCK ENABLE

TLC545C, TLC545I, TLC546C, TLC546I 8-BIT ANALOG-TO-DIGITAL CONVERTERS WITH SERIAL CONTROL AND 19 INPUTS

MOS (PTY) LTD. E Single Channel PIR Signal Processor. Applications. General Description. Features. Digital Sensor Assembly with E931.

Ultraprecision, 36 V, 2.8 nv/ Hz Dual Rail-to-Rail Output Op Amp AD8676

Single 0.275% Comparator and Reference with Dual Polarity Outputs ADCMP361

OLH7000: Hermetic Linear Optocoupler

AUR3840. Serial-interface, Touch screen controller. Features. Description. Applications. Package Information. Order Information

DS1267B Dual Digital Potentiometer

12-Bit Successive-Approximation Integrated Circuit A/D Converter AD ADC80

CMOS linear image sensors

ADA485-/ADA485- TABLE OF CONTENTS Features... Applications... Pin Configurations... General Description... Revision History... Specifications... 3 Spe

OLF400: Low-Input Current Hermetic Surface Mount Optocoupler

78A207 MFR1 Receiver DATA SHEET DESCRIPTION FEATURES OCTOBER 2005

TL1451AC, TL1451AY DUAL PULSE-WIDTH-MODULATION CONTROL CIRCUITS

CMOS linear image sensor

9- and 11-Channel, Muxed Input LCD Reference Buffers AD8509/AD8511

12-Bit Successive-Approximation Integrated Circuit ADC ADADC80

Features. Applications

DECODER I/O DATA CIRCUIT CONTROL CIRCUIT

SN54HC175, SN74HC175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR

TCD1711DG TCD1711DG. Features. Pin Connection (top view) Maximum Ratings (Note 1)

DATASHEET CD4069UBMS. Features. Pinout. Applications. Functional Diagram. Description. Schematic Diagram. CMOS Hex Inverter

MAX6675. Cold-Junction-Compensated K-Thermocoupleto-Digital Converter (0 C to C) Features

ILX526A pixel CCD Linear Image Sensor (B/W)

M54516P MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY

A Prototype Amplifier-Discriminator Chip for the GLAST Silicon-Strip Tracker

Transcription:

107 Bonaventura Dr., San Jose, CA 95134 Tel: +1 408 432 9888 Fax: +1 408 432 9889 www.x-scanimaging.com Linear X-Ray Photodiode Detector Array with Signal Amplification XB8816R Series An X-Scan Imaging XB8816R linear detector array is constructed of CMOS silicon photodiode array detector chips mounted on a single printed-circuit board. The imaging circuit of each detector chip consists of a contiguous linear array of photodiodes, a timing generator, digital scanning shift register, an array of charge integrating amplifiers, sample-and-hold circuits, and signal amplification chain. Each detector array generates an End-Of-Scan (EOS) pulse that can be used to initiate the scanning of the next detector array. Thus, a longer, continuous detector array can be formed from a daisy chain of smaller detector arrays. For x-ray scanning applications, a scintillator material tailored to the user s application is attached to the surface of the detector array to convert x-ray photons into visible light for detection by the photodiode array. The XB8816R photodiode array is uniquely designed and processed to reduce radiation damage from the x-ray flux. The signal processing circuits are positioned 2 mm away from the photodiode array. These circuits are shielded from direct x-ray radiation using an external heavy-metal shield. The precision alignment of the metal shield with respect to the signal processing circuits is performed at the factory using a special molded housing and chipon-board (COB) technology. Key Features Large element pitch resolution of 1.6 mm Different array lengths available: o 2.0 inches (32 pixels) o 4.0 inches (64 pixels) o etc. 5-V power supply operation Simultaneous integration by using an array of charge integrating amplifiers Sequential readout with a digital scanning shift register (Data rate: 1 MHz max.) Integrated CDS circuits allow low noise and wide dynamic range up to > 4000 User-specified scintillator material GOS:Tb, CsI:Tl, CdWO4, etc. Extended radiation hardness lifetimes Applications Linear x-ray imaging for industrial and food inspection Linear x-ray imaging for homeland security and cargo screening 1 2014 X-Scan Imaging Corp. Dec 2014, Rev. 1.1

Mechanical specifications Parameter Symbol i XB8816R-2.0 ii XB8816R-4.0 iii Unit Element pitch P 1.6 1.6 mm Element diffusion width W 1.565 1.565 mm Element height H 2.4 2.4 mm Number of elements 32 64 Active area length 51.2 102.4 mm i Refer to enlarged view of active area figure. ii 2-inch long detector is specified here. Other lengths (at multiples of 0.5 inches) are available upon request. iii 4-inch long detector is specified here. Other lengths (at multiples of 0.5 inches) are available upon request. Enlarged view of active area Absolute maximum ratings Electronic device sensitive to electrostatic discharge and x-ray radiation. Although this device features ESD protection circuitry, permanent damage ranging from subtle performance degradation to complete device failure may occur on devices subjected to high-energy electrostatic discharges. Furthermore, although this device features radiation shielding for protection against anticipated x-ray radiation, permanent damage ranging from subtle performance degradation to complete device failure may occur on devices subjected to unanticipated x- ray radiation (e.g. off-axis or extremely high energy radiation). Therefore, proper precautions against ESD and x-ray radiation must be taken during handling and storage of this device. Parameter Symbol Min Max Unit Supply voltage VDD 0.3 +6 V Reference voltage VREF 0.3 VDD + 0.3 V Digital input voltages 0.3 VDD + 0.3 V Operating temperature iv Topr 5 +60 o C Storage temperature Tstg 10 +70 o C iv Humidity must be controlled to prevent the occurrence of condensation. 2 Dec 2014, Rev. 1.1

Recommended terminal voltage Parameter Symbol Min. Typ. Max. Unit Supply voltage VDD 4.75 5 5.25 V Reference voltage VREF 4.50 V Electrical characteristics [Ta = 21 o C, VDD = 5 V] Parameter Symbol Min. Typ. Max. Unit Digital Clock pulse frequency v f(clk) 40 4000 KHz Digital input voltage vi High level Vih VDD 1.00 VDD VDD V Low level Vil 0 0 0.4 V Digital input capacitance Ci 40 pf Digital input leakage current Ii 10 +10 µa Digital output voltage vii High level Voh VDD 0.75 VDD VDD V Low level Vol 0 0 0.4 V Digital output load capacitance Co 50 pf Analog Reference voltage input impedance viii Rref 5 KΩ Charge amplifier feedback capacitance ix (PG2:PG1) 0:0 Cf00 16 pf 0:1 Cf01 8 pf 1:0 Cf10 4 pf 1:1 Cf11 2 pf Video output impedance Zv 1 KΩ Video output load capacitance Cv 100 pf Power Power consumption P 200 mw v Video rate is 1/4 of clock pulse frequency f (CLK). vi Digital inputs include CLK, RESET, EXTSP, PG2, and PG1. vii Digital outputs include Trig and EOS (see pin connections). viii Reference voltage input impedance is dependent on length of detector. For a 2-inch detector (XB8816R-2.0), the input impedance is 5 KΩ. ix The sensitivity selection pins (see PG2:PG1 pin connections) control the sensitivity of the detector by selecting the pixel charge amplifier feedback capacitance from Cf00 to Cf11. At Cf00, the detector has lowest sensitivity. At Cf11, the detector has highest sensitivity. 3 Dec 2014, Rev. 1.1

Radio-opto-electrical characteristics [Ta = 21 o C, VDD = 5 V] Parameter Symbol XB8816R (1.6mm) Unit Min. Typ. Max. Output offset voltage x Vos VREF V Dark offset voltage xi Vd 40 40 mv 1:1 12000 X-ray sensitivity xii 1:0 6000 S V/R (PG2:PG1) 0:1 3000 0:0 1500 Photo response non-uniformity xiii PRNU 10 10 % PG2:PG1 = 0:0 0.75 Noise xiv N PG2:PG1 = 1:1 2.00 Saturation output voltage Vsat 3.0 V mvrms x Video output is negative-going output with respect to the output offset voltage. xi Difference between output signal under dark conditions and Vref with an integration time of 1 ms. xii Sensitivity is dependent on x-ray source. Other scintillations with different sensitivity are available. xiii Measured without scintillation. When the photodiode array is exposed to uniform light which is 50% of the saturation exposure, the Photo Response Non Uniformity (PRNU) is defined as follows: PRNU = X X 100% where X is the average output of all elements and X is the difference between the maximum and minimum outputs. xiv Measured with a video data rate of 750 KHz and an integration time of 1 ms in dark state. Output waveform of one element Dark State Output Offset Voltage (Vos) Saturation Output Voltage (Vsat) GND Saturation State 4 Dec 2014, Rev. 1.1

Block diagram EXTSP 4 VDD 6 GND 7 RESET 1 Timing Generator 3 TRIG CLK 2 VREF 10 VMS PG0 5 PG1 11 PG2 12 Shift Register Hold Circuit Charge Amplifier Array 1 2 3 4 5 N-1 N Photo Diode Array 8 EOS 9 VIDEO Timing chart xv CLK 1 2 3 4 5 14 15 16 17 18 19 20 1 2 3 4 5 6 7 RESET tplw (RESET) ~7.5 Clocks tphw (RESET) Integration Time ~6.5 Clocks Video Output Period VIDEO 1 2 n-1 n TRIG EOS 5 Dec 2014, Rev. 1.1

tf (CLK) tr (CLK) tplw (CLK) tphw (CLK) th ts th ts tplw (RESET) tphw (RESET) tf (RESET) tr (RESET) Parameter Symbol Min. Typ. Max. Unit Clock pulse low/high width tplw (CLK), tphw (CLK) 100 ns Clock pulse rise/fall times tr (CLK), tf (CLK) 0 20 30 ns Reset pulse low width xvi tplw (RESET) 12 / f(clk) 16 / f(clk) ms Reset pulse high width xvii tphw (RESET) 20 µs Reset pulse rise/fall times tr (RESET), tf (RESET) 0 20 30 ns Reset pulse setup time xviii ts 40 ns Reset pulse hold time th 40 ns xv The falling of Video just before the 19 th falling edge of CLK after transition of RESET from High to Low corresponds to the first pixel. The video output for the first pixel should be read around the 20 th falling edge and before the subsequent rising CLK edge while Trig is high. After the first pixel, a pixel output appears on Video at every 4th clock cycle. Care should be taken to prevent the rising edge of the RESET during the video output. Improper positioning of the RESET edges can lead to interference with the read-out. The falling edge of the RESET should follow the last pixel of the previous line s read-out. Thus, one cycle of RESET pulses cannot be set shorter than the time equal to (17 + 4 N) clock cycles, where N is the number of pixels. EOS of each detector chip appears during the output of the last pixel. xvi RESET must stay Low [tplw(reset)] for at least twelve clock cycles. xvii The falling edge of RESET pulse determines the end of the integration time and the start of signal read-out, while the rising edge of the RESET pulse determines the start of the integration time. As a result, the signal-charge integration time can be controlled externally with the width of the RESET pulse [tphw(reset)]. However, the charge integration does not start at the rise of a RESET pulse but starts at the 8 th falling edge of clock after the rise of the RESET pulse and ends at the 7 th falling edge of clock after the fall of the RESET pulse. xviii The rising and falling edges of RESET must observe the setup and hold time requirements around the falling edges of CLK. 6 Dec 2014, Rev. 1.1

Mechanical drawings xix xix Unit: Dimensions are in millimeters (mm). Board: FR4 epoxy resin bonded glass fabric. Connector: BISON Advanced Technology Corp., Ltd. (www.bison-protech.com), P101-RGP-060/030-12 or similar. Pin connections Pin No. Symbol Name Description 1 RESET Reset Pulse Negative-going pulse input 2 CLK Clock Pulse Pulse input 3 TRIG Trigger Pulse Positive-going pulse output 4 EXTSP External Start Pulse Pulse/voltage input 5 VMS Master/Slave Selection See sensitivity selection table 6 VDD Supply Voltage 5-V supply voltage 7 GND Ground Common ground voltage 8 EOS End of Scan Negative-going pulse output 9 VIDEO Video Output Negative-going output with respect to VREF 10 VREF Reference Voltage Voltage input 11 PG1 Sensitivity Selection See sensitivity selection table 12 PG2 Sensitivity Selection See sensitivity selection table 7 Dec 2014, Rev. 1.1

Sensitivity Selection Table Sensitivity Mode PG2 PG1 Relative Sensitivity 1 GND GND 1/8 2 GND VDD 1/4 3 VDD GND 1/2 4 VDD VDD 1 Master/slave selection with start pulse EXTSP settings (VMS=GND) For most applications, multiple detectors are read out in parallel. To ensure parallel read out, set the EXTSP inputs of all detectors to LOW (A in the table below). In applications where two or more linearly connected detectors are read out sequentially (in series), set the first detector s EXTSP to LOW while connecting the EXTSP input of each subsequent detector to the EOS output of each respective preceding detector (B in the table below). The CLK and RESET pulses should be shared among all detectors and the Video output terminals of all detectors are connected together. The maximum number of detectors that can be daisy-chained together is limited by the maximum Video output capacitance requirement. A B Operation Mode Master configuration: Parallel readout: all detectors Serial readout: 1 st detector only Slave configuration: Serial readout: 2 nd and later detectors EXTSP LOW Preceding detector s EOS should be input Master/slave selection voltage VMS and external start pulse EXTSP settings For most applications, multiple detectors are read out in parallel. To ensure parallel read out, set the VMS input of all detectors to VDD (A in the table below). In applications where two or more linearly connected detectors are read out sequentially (in series), set the VMS input of the first detector to VDD and the VMS input of each subsequent (second and later) detector to GND while connecting the EXTSP input of each subsequent detector to the EOS output of each respective preceding detector (B in the table below). The CLK and RESET pulses should be shared among all detectors and the Video output terminals of all detectors are connected together. The maximum number of detectors that can be daisy-chained together is limited by the maximum Video output capacitance requirement. A B Operation Mode VMS EXTSP Master configuration: Parallel readout: all detectors VDD Don t care Serial readout: 1 st detector only Slave configuration: Serial readout: 2 nd and later detectors GND Preceding detector s EOS should be input 8 Dec 2014, Rev. 1.1

Readout circuit In order to minimize noise and to maximize performance, an operational amplifier should be placed close to the detector to amplify the Video signal. Information furnished by X-Scan Imaging is believed to be accurate and reliable. However, no responsibility is assumed by X-Scan Imaging Corporation for its use. Users are responsible for their products and applications using X-Scan Imaging components. To minimize the risks associated with users products and applications, users should provide adequate design and operating safeguards. No responsibility is assumed by X-Scan Imaging Corporation for any infringements of patents or other rights of third parties that may result from the use of the information. No license is granted by implication or otherwise under any patent or patent rights of X- Scan Imaging Corporation. 2014 X-Scan Imaging Corp. 107 Bonaventura Dr., San Jose, CA 95134, U.S.A. Tel: +1 408 432 9888 Fax: +1 408 432 9889 www.x-scanimaging.com 9 Dec 2014, Rev. 1.1