Insulated Gate Bipolar Transistor (Trench IGBT), 75 A VS-GT75DAU PRODUCT SUMMARY SOT-7 V CES V I C(DC) 75 A at 9 C () V CE(on) typical at A, 5 C.73 V I F(DC) 3 A at 9 C Package SOT-7 Circuit Single Switch Diode Note () Maximum collector current admitted is A, to not exceed the maximum temperature of terminals FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA μs short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery T J maximum = 5 C Fully isolated package Speed 4 khz to 3 khz Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: For definitions of compliance please see www.vishay.com/doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages Very low V CE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () C T C = 9 C 75 T C = 5 C 88 Pulsed collector current I CM 45 Clamped inductive load current I LM 45 A T C = 5 C 54 Diode continuous forward current I F T C = 9 C 3 Gate to emitter voltage V GE ± V T C = 5 C 87 Power dissipation, IGBT P D T C = 9 C 5 T C = 5 C 9 Power dissipation, diode P D T C = 9 C 5 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do not exceed the maximum temperature of terminals Revision: 3-Sep-3 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5 μa - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, -.98. V GE = 5 V, I C = A -.73. V GE = 5 V, I C = A, T J = 5 C -.5 - Gate threshold voltage V GE(th) V CE = V GE, I C = 7.5 ma 4.9 5.9 7.9 V CE = V GE, I C = 5 μa - 5 - V CE = V GE, I C = 5 μa, -.9 - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) - -7.6 - mv/ C V GE = V, V CE = V -.9 μa Collector to emitter leakage current I CES V GE = V, V CE = V, -.85 ma V GE = V, V CE = V, T J = 5 C - 4 Forward voltage drop, diode V FM I F = 4 A, V GE = V, - 3.5 3.47 V I F = 4 A, V GE = V - 3. 3.44 I F = 4 A, V GE = V, T J = 5 C - 3.5 - Gate to emitter leakage current I GES V GE = ± V - - ± na V SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g - 83 - Gate to emitter charge (turn-on) Q ge I C = 5 A (t p < 4 μs, D < %), V CC = 6 V, V GE = 5 V - 8 - nc Gate to collector charge (turn-on) Q gc - 38 - Turn-on switching loss E on - 4.3 - Turn-off switching loss E off - 6.9 - mj Total switching loss E tot I C = A, V CC = 7 V, -.93 - Turn-on delay time t d(on) V GE = 5 V, R g = 5-3 - Rise time t r L = 5 μh, Energy losses - 65 - Turn-off delay time t d(off) include tail - 35 - ns Fall time t f and diode - 7 - Turn-on switching loss E on recovery - 5.7 - Turn-off switching loss E off Diode used -.59 - mj Total switching loss E tot I C = A, V CC = 7 V, HFA6PB - 5.66 - Turn-on delay time t d(on) V GE = 5 V, R g = 5-35 - Rise time t r L = 5 μh, - 8 - Turn-off delay time t d(off) - 33 - ns Fall time t f - 35 - Reverse bias safe operating area RBSOA T J = 5 C, I C = 45 A, R g = V GE = 5 V to V, V CC = 9 V, V P = V, L = 5 μh Fullsquare Diode reverse recovery time t rr - 64 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V - - A Diode recovery charge Q rr - 994 - nc Diode reverse recovery time t rr - 3 - ns I F = 5 A, di F /dt = A/μs, Diode peak reverse current I rr - 6.5 - A V R = 4 V, Diode recovery charge Q rr - 864 - nc Short circuit safe operating area SCSOA T J = 5 C, R g =, V GE = 5 V to V, V CC = 9 V, V p = V μs Revision: 3-Sep-3 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT - -.5 R thjc Diode - -.57 C/W Case to heatsink R thcs Flat, greased surface -.5 - Weight - 3 - g Mounting torque - -.3 Nm Case style SOT-7 Allowable Case Temperature ( C) 6 4 8 6 4 DC 4 8 6 4 8 3 I C - Continuous Collector Current (A) Fig. - Maximum DC IGBT Collector Current vs. Case Temperature Allowable Case Temperature ( C) 6 4 8 6 4 3 4 5 6 7 8 I F - Continuous Forward Current (A) Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature Diode Leg I C - Collector to Emitter Current (A) 3 75 5 5 75 5 5 75 5 5 V GE = 5 V T J = 5 C.5..5..5 3. 3.5 4. V CE - Collector-to-Emitter Voltage (V) Fig. - Typical Collector to Emitter Current Output Characteristics of IGBT I F - Forward Current (A) 6 8 T J = 5 C 4.. 3. 4. 5. 6. 7. 8. V F - Forward Voltage Drop Characteristics (V) Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: 3-Sep-3 3 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU I C - Collector to Emitter Current (A) 4 8 6 T J = 5 C 4 4.5 5. 5.5 6. 6.5 7. 7.5 8. 8.5 9. V CE - Collector-to-Emitter Current (A).4...8.6.4.. I C = A I C = 8 A I C = 6 A I C = 4 A.8 4 6 8 4 6 V GE - Gate-to-Emitter Voltage (V) T J - Junction Temperature ( C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V Collector Current (A) I CES -... T J = 5 C T J = 5 C Switching Energy (mj) 8 6 4 E off E on. 4 6 8 V CES - Collector-to-Emitter Voltage (V) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 6 3 4 5 6 7 8 9 I C - Collector Current (A) Fig. 9 - Typical IGBT Energy Loss vs. I C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Diode used: HFA6PB V GE(th) Threshold Voltage (V) 5.5 5 4.5 4 3.5 3.5 Switching Time (μs). t f t r t d(on) t d(off)..4.6.8. I C (ma) Fig. 7 - Typical IGBT Threshold Voltage. 4 6 8 I C - Collector Current (A) Fig. - Typical IGBT Switching Time vs. I C, L = 5 μh, V CC = 6 V, R g = 5, V GE = 5 V Diode used: HFA6PB Revision: 3-Sep-3 4 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU Energy Losses (mj) 4 3 3 4 5 R g (Ω) Fig. - Typical IGBT Energy Loss vs. R g, I C = 75 A, L = 5 μh, V CC = 6 V, V GE = 5 V Diode used: HFA6PB E on E off t rr (ns) 3 9 7 5 3 9 7 5 3 9 di F /dt (A/μs) Fig. 3 - Typical Reverse Recovery Time vs. di F /dt, of Diode, at I F = 5 A, V R = 4 V 3 Switching Time (μs). t d(on) t d(off) t r t f Q rr (nc) 5 5 5. 3 4 5 6 R g (Ω) Fig. - Typical IGBT Switching Time vs. R g, L = 5 μh, V CC = 6 V, I C = 75 A, V GE = 5 V Diode used: HFA6PB di F /dt (A/μs) Fig. 4 - Typical Stored Charge vs. di F /dt of Diode, at I F = 5 A, V R = 4 V 45 4 35 3 I rr (A) 5 5 5 di F /dt (A/μs) Fig. 5 - Typical Reverse Recovery Current vs. di F /dt, of Diode, at I F = 5 A, V R = 4 V Revision: 3-Sep-3 5 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU Z thjc - Thermal Impedance Junction to Case ( C/W)...75.5.5..5. DC..... P DM Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C t t Rectangular Pulse Duration (s) Fig. 6 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)...75.5.5..5. DC Notes:. Duty factor D = t /t. Peak T J = P DM x Z thjc + T C..... Rectangular Pulse Duration (s) Fig. 7 - Maximum Thermal Impedance Z thjc Characteristics (Diode) P DM t t I C (A).. V CE (V) Fig. 8 - IGBT Rverse Bias SOA, T J = 5 C, V GE = 5 V Revision: 3-Sep-3 6 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. 9a - Clamped Inductive Load Test Circuit Fig. 9b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. a - Switching Loss Test Circuit 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off E ts = (E on + E off ) Fig. b - Switching Loss Waveforms Test Circuit Revision: 3-Sep-3 7 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT75DAU ORDERING INFORMATION TABLE Device code VS- G T 75 D A U 3 4 5 6 7 8 3 4 5 6 7 8 - product - Insulated Gate Bipolar Transistor (IGBT) - Trench IGBT technology - Current rating (75 = 75 A) - Circuit configuration (D = Single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9543 www.vishay.com/doc?9545 Revision: 3-Sep-3 8 Document Number: 9399 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B- 7.45 (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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