EE C245/ME C218: ntrductin t MEMS Lecture 2m: Benefits f Scaling Lecture Outline EE C245 ME C218 ntrductin t MEMS Design Fall 211 Prf. Clark T.-C. Nguyen Reading: Senturia, Chapter 1 Lecture Tpics: Benefits f Miniaturizatin Examples GHz micrmechanical resnatrs Chip-scale atmic clck Micr gas chrmatgraph Dept. f Electrical Engineering & Cmputer Sciences University f Califrnia at Berkeley Berkeley, CA 9472 Lecture Mdule 2: Benefits f Scaling EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 1 EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 2 Benefits f Size Reductin: MEMS Benefits f size reductin clear fr C s in elect. dmain size reductin speed, lw pwer, cmplexity, ecnmy MEMS: enables a similar cncept, but MEMS extends the benefits f size reductin beynd the electrical dmain Perfrmance enhancements fr applicatin dmains beynd thse satisfied by electrnics in the same general categries Speed Frequency, Thermal Time Cnst. Pwer Cnsumptin Actuatin Energy, Heating Pwer Cmplexity ntegratin Density, Functinality Ecnmy Batch Fab. Pt. (esp. fr packaging) Rbustness g-frce Resilience EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 3 Vibrating RF MEMS EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 4 Cpyright @ 211 Regents f the University f Califrnia 1
EE C245/ME C218: ntrductin t MEMS Lecture 2m: Benefits f Scaling Basic Cncept: Scaling Guitar Strings Frequency f a Stretched Wire Guitar String μmechanical Resnatr Vib. Amplitude Lw High Guitar Freq. 11 Hz Freq. Vibrating Vibrating A A String String (11 (11 Hz) Hz) Stiffness Freq. Equatin: 1 kr f = 2π m r Mass [Bannn 1996] =8.5MHz vac =8, air ~5 =4.8μm m r ~ 1-13 kg =8μm, h r d=1å, =5V Press.=7mTrr EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 5 EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 6 Frequency f a Clamped-Clamped Beam Frequency f a Clamped-Clamped Beam EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 7 EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 8 Cpyright @ 211 Regents f the University f Califrnia 2
EE C245/ME C218: ntrductin t MEMS Lecture 2m: Benefits f Scaling Guitar Basic Cncept: Scaling Guitar Strings Guitar String Vib. Amplitude Freq. Vibrating Vibrating A A String String (11 (11 Hz) Hz) Lw High 11 Hz Freq. Stiffness Freq. Equatin: 1 kr f = 2π m r Mass μmechanical Resnatr [Bannn 1996] =8.5MHz vac =8, air ~5 =4.8μm m r ~ 1-13 kg =8μm, h r d=1å, =5V Press.=7mTrr EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 9 Transmissin [db] f =9MHz, BW=2kHz, PBW=.2%.L.=2.79dB, Stp. Stp. Rej.=51dB 2dB 2dB S.F.=1.95, 4dB 4dB S.F.=6.45-1 3CC 3 Bridged μmechanical Filter -2 P in =-2dBm Sharper -3 rll-ff Design: =4μm -4 Lss Ple =6.5μm h r -5 L c =3.5μm -6 [S.-S. Li, Nguyen, FCS 5] L b =1.6μm =1.47V P=-5dBm 8.7 8.9 9.1 9.3 R i =R =12kΩ [Li, et al., UFFCS 4] EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 1 n Out v i C R Micrmechanical Filter Circuit nput 1:η c η c :1 1:η c η c :1 1:η m r 1/k r c r -1/k s -1/k s m r 1/k r c r -1/k s -1/k s m r 1/k r e c r η e :1 1/k s 3 1/k b 1/k b -1/k b Bridging Beam Cupling Beam Resnatr Output EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 11 1/k s R v 1:η b η b :1 v v i ω C 1.51-GHz, =11,555 Nancrystalline Diamnd Disk μmechanical Resnatr mpedance-mismatched stem fr reduced anchr dissipatin Operated in the 2 nd radial-cntur mde ~11,555 (vacuum); ~1,1 (air) Belw: 2 μm diameter disk Design/ R=1μm, t=2.2μm, d=8å, =7V f Plysilicn Stem =1.51 GHz (2 nd mde), =11,555 (mpedance Mismatched -84 t Diamnd Disk) -86 = 1.51 GHz = 11,555 (vac) -88 = 1,1 (air) -9 Plysilicn Electrde R -92 = 1,1 (air) -94-96 -98-1 CVD Diamnd μmechanical Disk Grund 157.4 157.6 157.8 158 158.2 Resnatr Plane EE C245: ntrductin t MEMS Design LecM 2 [Wang, C. Nguyen Butler, Nguyen 8/2/9 MEMS 4] 12 Mixed Amplitude [db] Cpyright @ 211 Regents f the University f Califrnia 3
EE C245/ME C218: ntrductin t MEMS Lecture 2m: Benefits f Scaling 163-MHz Differential Disk-Array Filter Linear MEMS in Wireless Cmms Cm. Array Cuplers Filter Cupler High High and and gd gd linearity f micrmechanical resnatrs Filters Filters fr fr frnt-end frequency selectin v i+ v i- λ Prt1 Prt1 Prt2 Prt2 Diff. Array Cuplers EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 13 Prt3 Prt3 Prt4 Prt4 v + λ v - [Li, Nguyen Trans 7] Micrmechanical Bandpass Filter Filter Mixer Wireless RF PLL Xstal Phne RF BPF Mixer EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 14 Transmissin [db] Miniaturizatin f RF Frnt Ends RF RF Pwer Pwer Amplifier 897.5±17.5MHz Dual-Band Zer-F Transistr Chip Chip 342-384MHz VCO VCO 925-96MHz 185-188MHz 26-MHz Xstal Xstal Prblem: high- passives pse a bttleneck against miniaturizatin Mixer Wireless Xstal RF PLL Phne RF BPF Mixer EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 15 CDMA CDMA-2 Multi-Band Wireless Handsets GSM 9 PCS 19 DCS 18 WCDMA EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 16 Tank (N+1)/N Xstal RXRF Channel Select PLL The number ff-chip high- passives increases dramatically Need: n-chip high- passives Cpyright @ 211 Regents f the University f Califrnia 4
EE C245/ME C218: ntrductin t MEMS Lecture 2m: Benefits f Scaling All High- Passives n a Single Chip.25 mm Vibrating Vibrating Resnatr Resnatr 1.5-GHz, 1.5-GHz, ~12, ~12, CDMA RF Filters (869-894 MHz) GSM 9 RF Filter (935-96 MHz) PCS 19 RF Filter (193-199 MHz) DCS 18 RF Filter (185-188 MHz) CDMA-2 RF Filters (185-199 MHz) Vibrating Vibrating Resnatr Resnatr 62-MHz, 62-MHz, ~161, ~161, WCDMA RF Filters (211-217 MHz) EE C245: ntrductin t MEMS Design LecM 2 C. Nguyen 8/2/9 17.5 mm Optinal RF Ultra-High Tanks Lw Freq. Reference Ultra-High Tank Cpyright @ 211 Regents f the University f Califrnia 5