N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D S G Top View of TO-252-3 D pplications G Power Management in TV Inverter. S N-Channel MOSFET Ordering and Marking Information PM115N ssembly Material Handling Code Temperature Range Package Code Package Code U : TO-252-3 Operating Junction Temperature Range C : -55 to 175 o C Handling Code TR : Tape & Reel (25ea/reel) ssembly Material G : Halogen and Lead Free Device PM115N U : PM115N XXXXX XXXXX - Lot Code Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 1% matte tin plate termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-2D for MSL classification at lead-free peak reflow temperature. SINOPOWER defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
bsolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T =25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 1 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 175 C T STG Storage Temperature Range -55 to 175 C I S Diode Continuous Forward Current 5 I DP I D P D 3μs Pulse Drain Current Tested T C =25 C 64 T C =1 C 44 Continuous Drain Current T C =25 C 16 T C =1 C 11 Maximum Power Dissipation T C =25 C 6 T C =1 C 3 W R qjc Thermal Resistance-Junction to Case 2.5 C/W R qj Thermal Resistance-Junction to mbient 5 C/W ES valanche Energy, Single Pulsed (L=.3mH) 3 mj Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions PM115NU Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25m 1 - - V I DSS V DS =8V, V GS =V - - 1 Zero Gate Voltage Drain Current m T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25m 1.5 2 2.5 V I GSS Gate Leakage Current V GS =±16V, V DS =V - - ±1 m R DS(ON) a V GS =1V, I DS =5-8 1 Drain-Source On-state Resistance mw V GS =4.5V, I DS =2-13 17 Diode Characteristics V SD a Diode Forward Voltage I SD =5, V GS =V.6.8 1.1 V trr Reverse Recovery Time 33 47 61 ns I DS =5, dl SD /dt=1/ms Reverse Recovery Charge 61 87 113 nc Qrr 2
Electrical Characteristics (Cont.) (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Dynamic Characteristics b PM115NU Min. Typ. Max. C iss Input Capacitance V GS =V, 73 94 125 C oss Output Capacitance V DS =3V, 45 8 115 Reverse Transfer Capacitance Frequency=1.MHz 25 5 75 C rss t d(on) Turn-on Delay Time - 13 24 t r Turn-on Rise Time V DD =3V, R L =3W, - 1 19 I DS =1, V GEN =1V, t d(off) Turn-off Delay Time R G =6W - 32 6 Turn-off Fall Time - 16 3 t f Gate Charge Characteristics b Q g Total Gate Charge 12 21 3 Q gs Gate-Source Charge V DS =5V, V GS =1V, I DS =5 3.4 4.9 6.4 Gate-Drain Charge 2.9 5.8 8.7 Q gd Note a : Pulse test ; pulse width 3ms, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns nc 3
Typical Operating Characteristics Power Dissipation Drain Current 7 18 6 15 Ptot - Power (W) 5 4 3 2 ID - Drain Current () 12 9 6 1 T C =25 o C 2 4 6 8 1 12 14 16 18 Tj - Junction Temperature ( C) 3 T C =25 o C,V G =1V 2 4 6 8 1 12 14 16 18 Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance ID - Drain Current () 3 1 1 1.1 Rds(on) Limit 3ms 1ms 1ms 1ms 1s DC T C =25 O C.1.1.1 1 1 1 5 VDS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance 2 1.1.1.2.5 Single Pulse.1.2 Duty =.5 Mounted on 1in 2 pad R qj :5 o C/W.1 1E-4 1E-3.1.1 1 1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 2 18 V GS =6,7,8,9,1V 5.5V 22 2 ID - Drain Current () 16 14 12 5V 1 8 4.5V 6 4 4V 2 3.5V 1 2 3 4 5 RDS(ON) - On - Resistance (mw) 18 16 14 12 1 8 6 4 V GS =4.5V V GS =1V 2 4 8 12 16 2 VDS - Drain - Source Voltage (V) ID - Drain Current () Gate-Source On Resistance Gate Threshold Voltage 2 I DS =5 1.6 I DS =25m RDS(ON) - On - Resistance (mw) 18 16 14 12 1 8 6 Normalized Threshold Voltage 1.4 1.2 1..8.6.4 4 3 4 5 6 7 8 9 1 VGS - Gate - Source Voltage (V).2-5 -25 25 5 75 1 125 15 175 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 3. 2.5 V GS = 1V I DS = 5 2 1 Normalized On Resistance 2. 1.5 1..5 IS - Source Current () 1 T j =15 o C T j =25 o C R ON @T j =25 o C: 8mW. -5-25 25 5 75 1 125 15 175 Tj - Junction Temperature ( C).1..2.4.6.8 1. 1.2 1.4 VSD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 14 Frequency=1MHz 12 1 Ciss 8 6 4 2 Coss Crss 5 1 15 2 25 3 35 4 VDS - Drain - Source Voltage (V) VGS - Gate-source Voltage (V) 1 9 8 7 6 5 4 3 2 1 V DS =5V I DS =5 Gate Charge 3 6 9 12 15 18 21 QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT IS VDS RG VDD VDD tp IL.1W ES tv Switching Time Test Circuit and Waveforms VDS DUT RD VDS 9% RG VGS VDD tp 1% VGS td(on) tr td(off) tf 7
Package Information TO-252-3 E b3 c2 E1 L4 D L3 H D1 b e c SEE VIEW GUGE PLNE L SETING PLNE.25 VIEW 1 S TO-252-3 Y M MILLIMETERS INCHES B O L MIN. MX. MIN. MX. 2.18 2.39.86.94 1 b3 c c2 D D1 E.13 b.5.89 E1 e H L L3 4.95 5.46.46.61.46.89 5.33 4.57 6.35 6.73 3.81 9.4.9 2.29 BSC 6.22 6. 6. 1.78 L4 1.2 Note : Follow JEDEC TO-252..2.35.195.215.18.24.18.21 1.41.37.18.236.25.265.15.35.9 BSC.5.35.245.236.41.7.89 2.3.35.8.4 8 8 RECOMMENDED LND PTTERN 6.25 MIN. 6.8 MIN. 6.6 3 MIN. 2.286 1.5 MIN. 4.572 UNIT: mm 8
Carrier Tape & Reel Dimensions OD P P2 P1 H E1 OD1 B T B W F K B SECTION - SECTION B-B d T1 pplication H T1 C d D W E1 F TO-252-3 33.± 2. 5 MIN. 16.4+2. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 16.±.3 1.75±.1 7.5±.5 P P1 P2 D D1 T B K 4.±.1 8.±.1 2.±.5 1.5+.1 -. 1.5 MIN..6+. -.4 6.8±.2 1.4±.2 2.5±.2 (mm) 9
Taping Direction Information TO-252-3 USER DIRECTION OF FEED Classification Profile 1
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin ) Temperature max (T smax ) Time (T smin to T smax ) (t s ) 1 C 15 C 6-12 seconds 15 C 2 C 6-12 seconds verage ramp-up rate (T smax to T P ) 3 C/second max. 3 C/second max. Liquidous temperature (T L ) Time at liquidous (t L ) Peak package body Temperature (T p )* Time (t P )** within 5 C of the specified classification temperature (T c ) 183 C 6-15 seconds 217 C 6-15 seconds See Classification Temp in table 1 See Classification Temp in table 2 2** seconds 3** seconds verage ramp-down rate (T p to T smax ) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p ) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p ) is defined as a supplier minimum and a user maximum. Table 1. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <35 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm 3 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Package Thickness Volume mm 3 <35 Volume mm 3 35-2 Volume mm 3 >2 <1.6 mm 26 C 26 C 26 C 1.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B12 5 Sec, 245 C HTRB JESD-22, 18 1 Hrs, 8% of VDS max @ Tjmax HTGB JESD-22, 18 1 Hrs, 1% of VGS max @ Tjmax PCT JESD-22, 12 168 Hrs, 1%RH, 2atm, 121 C TCT JESD-22, 14 5 Cycles, -65 C~15 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Park, Hsinchu, 378, Taiwan TEL: 886-3-5635818 Fax: 886-3-56425 11