N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =4.8mΩ (typ.) @ V GS =V R DS(ON) =7mΩ (typ.) @ V GS =4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) G D S Top View of TO-252 (2) D1 pplications Power Management in Desktop Computer or DC/DC Converters Ordering and Marking Information (1) G1 S1 (3) N-Channel MOSFET PM36N ssembly Material Handling Code Temperature Range Package Code Package Code U : TO-252 Operating Junction Temperature Range C : -55 to 15 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device PM36N U : PM36N XXXXX XXXXX - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-2C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 15ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. 1
bsolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T = 25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 V T J Maximum Junction Temperature 15 C T STG Storage Temperature Range -55 to 15 C I S Diode Continuous Forward Current 2 I DP 3µs Pulse Drain Current Tested Mounted on Large Heat Sink T C =25 C 2 T C = C 14 I D P D Continuous Drain Current T C =25 C 5* T C = C 35 Maximum Power Dissipation T C =25 C 5 T C = C 2 W R θjc Thermal Resistance-Junction to Case 2.5 CW Mounted on PCB of 1in 2 Pad rea I D P D Continuous Drain Current T =25 C 17 T = C Maximum Power Dissipation T =25 C 2.5 T = C 1 W R θj Thermal Resistance-Junction to mbient 5 C/W Mounted on PCB of Minimum Footprint I D P D Continuous Drain Current T =25 C 13 T = C 8 Maximum Power Dissipation T =25 C 1.5 T = C.5 W R θj Thermal Resistance-Junction to mbient 75 C/W Note * Current limited by bond wire. 2
Electrical Characteristics (T = 25 C Unless Otherwise Noted) Symbol Parameter Test Conditions Static Characteristics PM36NU Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =25µ 3 - - V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =V - - 1 T J =85 C - - 3 V GS(th) Gate Threshold Voltage V DS =V GS, I DS =25µ 1.3 1.8 2.5 V I GSS Gate Leakage Current V GS =±2V, V DS =V - - ± n R DS(ON) a Drain-Source On-state Resistance Diode Characteristics V SD a V GS =V, I DS =4-4.8 6 V GS =4.5V, I DS =2-7 9 Diode Forward Voltage I SD =2, V GS =V -.7 1.3 V Gate Charge Characteristics b Q g Total Gate Charge - 55.5 78 Q gs Gate-Source Charge V DS =15V, V GS =V, I DS =4 - - Gate-Drain Charge - 17 - Q gd Dynamic Characteristics b R G Gate Resistance V GS =V,V DS =V,F=1MHz - 1 - Ω C iss Input Capacitance V GS =V, - 326 - C oss Output Capacitance V DS =15V, - 485 - Reverse Transfer Capacitance Frequency=1.MHz - 37 - C rss t d(on) Turn-on Delay Time - 23 42 t r Turn-on Rise Time V DD =15V, R L =15Ω, - 23 42 I DS =1, V GEN =V, t d(off) Turn-off Delay Time R G =6Ω - 7 127 Turn-off Fall Time - 28 52 t f t rr Reverse Recovery Time - 14 - ns I DS =4, dl SD /dt=/µs Qrr Reverse Recovery Charge - 4 - nc Note a : Pulse test ; pulse width 3µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit µ mω nc pf ns 3
Typical Operating Characteristics Power Dissipation Drain Current 6 6 5 5 Ptot - Power (W) 4 3 2 ID - Drain Current () 4 3 2 T C =25 o C 2 4 6 8 12 14 16 18 T C =25 o C,V G =V 2 4 6 8 12 14 16 18 Tj - Junction Temperature ( C) Tj - Junction Temperature ( C) Safe Operation rea Thermal Transient Impedance 5 2 ID - Drain Current () 1 Rds(on) Limit 1ms ms ms 1s DC Normalized Effective Transient 1.1.1.5.2.1.2 Duty =.5 T C =25 o C.1.1 1 8 VDS - Drain - Source Voltage (V) Mounted on 1in 2 pad Single Pulse R.1 θj :5 o C/W 1E-4 1E-3.1.1 1 Square Wave Pulse Duration (sec) 4
Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 16 14 14 V GS = 4.5,5,6,7,8,9,V 12 ID - Drain Current () 12 8 6 4 2 4V 3.5V 3V RDS(ON) - On - Resistance (mω) 8 6 4 2 V GS =4.5V V GS =V..5 1. 1.5 2. 2.5 3. VDS - Drain-Source Voltage (V) 2 4 6 8 12 14 16 ID - Drain Current () Drain-Source On Resistance Gate Threshold Voltage 16 I D =4 1.6 I DS =25µ RDS(ON) - On - Resistance (mω) 14 12 8 6 4 V GS - Gate-Source Voltage (V) 1.4 1.2 1..8.6.4.2 2 1 2 3 4 5 6 7 8 9 VGS - Gate - Source Voltage (V). -5-25 25 5 75 125 15 Tj - Junction Temperature ( C) 5
Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 1.8 1.6 V GS = V I DS = 4 2 Normalized On Resistance 1.4 1.2 1..8 IS - Source Current () T j =15 o C Tj=25oC.6 R ON @T j =25 o C: 4.8mΩ.4-5 -25 25 5 75 125 15 1..3.6.9 1.2 1.5 1.8 Tj - Junction Temperature ( C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) 5 4 3 2 Crss Coss Frequency=1MHz Ciss 5 15 2 25 3 VGS - Gate-source Voltage (V) 8 6 4 2 V DS = 15V I D = 4 2 3 4 5 6 VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) 6
valanche Test Circuit and Waveforms DUT VDS L tp VDSX(SUS) VDS RG VDD IS VDD tp IL.1W ES tv Switching Time Test Circuit and Waveforms VDS RD DUT VDS 9% RG VGS VDD tp % VGS td(on) tr td(off) tf 7
Package Information TO-252 E b3 c2 E1 GUGE PLNE L L4 D L3 H D1 b e c SEE VIEW SETING PLNE.25 VIEW 1 S Y M MILLIMETERS B O L MIN. MX. 1 b3 c c2 D D1 E 2.39.13 b.5.89 E1 e H L L3 2.18 4.95 5.46.46.61.46.89 5.33 4.57 6.35 6.73 3.81 9.4.9 2.29 BSC 6.22 6. 6. 1.78 L4 1.2 TO-252 MIN..86 INCHES.9 BSC MX..94.2.35.195.215.18.24.18.2.18.41.37.5.35.245.25.265.15.35.4.7.89 2.3.35.8.4 8 8 Note : Follow JEDEC TO-252..236.236 8
Carrier Tape & Reel Dimensions OD P P2 P1 d H W F E1 K B OD1 B T B SECTION - SECTION B-B T1 pplication H T1 C d D W E1 F TO-252 33. 2. 5 MIN. 16.4+2. -. 13.+.5 -.2 1.5 MIN. 2.2 MIN. 16..3 1.75. 7.5.5 P P1 P2 D D1 T B K 4.. 8.. 2..5 1.5+. -. 1.5 MIN..6+. -.4 6.8.2.4.2 2.5.2 (mm) Devices Per Unit Package Type Unit Quantity TO-252 Tape & Reel 25 9
Taping Direction Information TO-252 USER DIRECTION OF FEED Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin t L Ramp-down ts Preheat 25 t 25 C to Peak Time Reliability Test Program Test item Method Description SOLDERBILITY MIL-STD-883D-23 245 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs Bias @125 C PCT JESD-22-B, 2 168 Hrs, %RH, 121 C TST MIL-STD-883D-11.9-65 C~15 C, 2 Cycles
Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly verage ramp-up rate (T L to T P) 3 C/second max. 3 C/second max. Preheat C 15 C - Temperature Min (Tsmin) 15 C 2 C - Temperature Max (Tsmax) 6-12 seconds 6-18 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L) - Time (t L) 183 C 6-15 seconds 217 C 6-15 seconds Peak/Classification Temperature (Tp) See table 1 See table 2 Time within 5 C of actual Peak Temperature (tp) -3 seconds 2-4 seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 25 C to Peak Temperature 6 minutes max. 8 minutes max. Note: ll temperatures refer to topside of the package. Measured on the body surface. Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 Table 2. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 <35 Volume mm 3 35-2 Volume mm 3 Volume mm 3 >2 <1.6 mm 26 + C* 26 + C* 26 + C* 1.6 mm 2.5 mm 26 + C* 25 + C* 245 + C* 2.5 mm 25 + C* 245 + C* 245 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 26 C+ C) at the rated MSL level. 35 <2.5 mm 24 +/-5 C 225 +/-5 C 2.5 mm 225 +/-5 C 225 +/-5 C Customer Service npec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642 Fax : 886-3-56425 Taipei Branch : 2F, No. 11, Lane 218, Sec 2 Jhongsing Rd., Sindain City, Taipei County 23146, Taiwan Tel : 886-2-29-3838 Fax : 886-2-2917-3838 11