ZSR SERIES 2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR DEVICE DESCRIPTION FEATURES VOLTAGE RANGE to 12 Volt

Similar documents
ZXRE4041 SOT23 MICROPOWER 1.225V VOLTAGE REFERENCE SUMMARY

ZR78L SERIES 2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR ISSUE 3 - NOVEMBER 1997 DEVICE DESCRIPTION FEATURES

ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A

ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 100V : R SAT = 36m DESCRIPTION FEATURES

ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A

ZXMN3A03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = I D = 4.6A DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXTP2012A 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = -60V : R SAT = 38m DESCRIPTION FEATURES APPLICATIONS

ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = 60V : R SAT = 30m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMP2120E5 200V P-CHANNEL ENHANCEMENT MODE MOSFET N/C N/C SOT23-5 PINOUT - TOP VIEW SUMMARY V (BR)DSS =-200V; R DS(ON) = 28

ZSM300 SUPPLY VOLTAGE MONITOR ISSUE 3 JULY 2006 DEVICE DESCRIPTION FEATURES APPLICATIONS SCHEMATIC DIAGRAM

ZXMN3A14F 30V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =30V : R DS ( on )=0.065

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -60V; R DS(ON) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =100V : R DS(on) =0.7 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR

ZSM330 SUPPLY VOLTAGE MONITOR ISSUE 3 JULY 2006 DEVICE DESCRIPTION FEATURES APPLICATIONS SCHEMATIC DIAGRAM

ZM33164 SUPPLY VOLTAGE MONITOR ISSUE 4 JULY 2006 DEVICE DESCRIPTION FEATURES APPLICATIONS SCHEMATIC DIAGRAM

ZXM62P03E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS =-30V; R DS(ON) =0.15

NOT RECOMMENDED FOR NEW DESIGN

ZXTN2010A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZSAT600 6 VOLT ENHANCED POSITIVE LOCAL VOLTAGE REGULATOR ISSUE 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES APPLICATIONS SCHEMATIC DIAGRAM. Vin.

ZXM62N03E6. Not Recommended for New Design Please Use ZXMN3A01E6TA 30V N-CHANNEL ENHANCEMENT MODE MOSFET

40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE

ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m

ZX5T849G 30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 30V : R SAT = 28m DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXT849K 30V NPN LOW SATURATION TRANSISTOR IN D-PAK. SUMMARY BV CEO = 30V : R SAT = 33m. typical; I C = 7A DESCRIPTION FEATURES APPLICATIONS PINOUT

COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE = 0.7 ; I D = 1.0 ; I D = -1.3A

ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS =20V : R DS ( on )=0.06 DESCRIPTION FEATURES APPLICATIONS PINOUT

ZX5T851A 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE. SUMMARY BV CEO = 60V : R SAT = 34m ; I C = 4.5A DESCRIPTION FEATURES APPLICATIONS

ZX5T851G 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = 60V : R SAT = 35m DESCRIPTION FEATURES APPLICATIONS PINOUT

120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

ZXMP4A16G 40V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -40V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXMHC3A01T8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE

ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = 100V : R DS(on) = 0.7 I D = 0.8A DESCRIPTION FEATURES SOT23 APPLICATIONS

ZXMN6A09G 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 60V; R DS(ON) = I D = 5.1A DESCRIPTION FEATURES APPLICATIONS

FSD270 SILICON DUAL VARIABLE CAPACITANCE DIODE. SUMMARY V BR =25V; I R =20nA; C d =33pF(Nom)

Applications. Devices are identified by type. Colour of marking: BYP53- black, BYP54 red

ZXCT1008 AUTOMOTIVE HIGH-SIDE CURRENT MONITOR APPLICATIONS

ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

MICROPOWER SC70-5 & SOT23-5 LOW DROPOUT REGULATORS

ZAMP MHz MMIC WIDEBAND AMPLIFIER LNA, 15dB Gain, Very Low Current

Applications. BYY53-75; ; BYY The package quantities for the different package

ZXMP3A17E6 30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.07 DESCRIPTION FEATURES APPLICATIONS PINOUT

Applications. BYY57-75; ; BYY The package quantities for the different package

ZXMN0545G4 450V N-CHANNEL ENHANCEMENT MODE MOSFET N/C SUMMARY V (BR)DSS = 450V; R DS(ON) = 50 ORDERING INFORMATION DEVICE MARKING ZXMN 0545

ZXT2M322. MPPS Miniature Package Power Solutions 20V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = 20V; R SAT = 64m

ZXCT1008 AUTOMOTIVE HIGH-SIDE CURRENT MONITOR APPLICATIONS

Applications. Device Quantity per box Options BYY57-75; ; BYY BYY58-75; ; BYY

ZXTAM322. MPPS Miniature Package Power Solutions 15V NPN LOW SATURATION TRANSISTOR. SUMMARY V CEO = 15V; R SAT = 45m ;I C = 4.5A

ZXT1M322. MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION SWITCHING TRANSISTOR. SUMMARY V CEO = -12V; R SAT = 60m ;I C = -4A DESCRIPTION

ZXMN3A04DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = 0.02 ;I D = 8.5A DESCRIPTION FEATURES SO8 APPLICATIONS

ZXFV4089 VIDEO AMPLIFIER WITH DC RESTORATION

ZXMN4A06G 40V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 40V; R DS(ON) = 0.05 DESCRIPTION FEATURES APPLICATIONS ORDERING INFORMATION

n/a ZXRE125FFTA n/a ZXRE125ER 1.22V VOLTAGE REF (ZTX) n/a ZXRE125EF 1.22V SMD VOLTAGE REF (ZTX) Voltage and current reference

ZXTDC3M832. MPPS Miniature Package Power Solutions DUAL 50V NPN & 40V PNP LOW SATURATION TRANSISTOR COMBINATION

ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION

ZXSC100 single cell DC-DC converter LED driving applications

ZXCT1050 Precision wide input range current monitor

ZXSC300 SINGLE OR MULTI CELL LED DRIVER SOLUTION DESCRIPTION FEATURES APPLICATIONS TYPICAL APPLICATION CIRCUIT ORDERING INFORMATION

ZMR SERIES FIXED 2.5 AND 5 VOLT MINIATURE VOLTAGE REGULATORS ISSUE 4 - MARCH 2002 DEVICE DESCRIPTION FEATURES VOLTAGE RANGE SCHEMATIC DIAGRAM

Application note for the ZXBM1004 and ZXBM2004 variable speed motor controllers - Interfacing to the motor windings

ZXMN3A06DN8 DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS = 30V; R DS(ON) = ;I D = 6.2A DESCRIPTION FEATURES APPLICATIONS

ZDT1048 SM-8 Dual NPN medium power high gain transistors

ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR

ZXMN3G32DN8 30V SO8 dual N-channel enhancement mode MOSFET

ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT89 S D

ZXCT1030 High-side current monitor with comparator

HIGH SIDE CURRENT MONITOR

ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT223 S D

ZVN4525E6 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY SOT23-6

ZXTP19060CZ 60V PNP medium transistor in SOT89

DN82 Start up switches for switch mode power supplies Andy Aspinall, Systems Engineer, Zetex Semiconductors

ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8

ZXMS6002G 60V N-Channel self protected enhancement mode IntelliFET MOSFET with status indication

ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =

COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;

ZXCT1008EV1 ZXCT1008EV1. ISSUE 3 April protection from 110V transients and includes and additional current limiting resistor.

ZXM62P02E6 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.20 ; ID=-2.3A SOT23-6

ZNBG3000 ZNBG3001 FET BIAS CONTROLLER ISSUE 1- AUGUST 1998 DEVICE DESCRIPTION APPLICATIONS FEATURES

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.18 ; ID=1.7A SOT23

ZXMP3A16G 30V P-CHANNEL ENHANCEMENT MODE MOSFET. SUMMARY V (BR)DSS = -30V: R DS(on) = DESCRIPTION FEATURES APPLICATIONS PINOUT

ZXSC100 Power Supply for Digital Still Camera.

ZXCT1030EV2 Evaluation Board User Guide

ZXMD63N02X DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.13Ω; ID=2.4A MSOP8

ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60 ; ID=-0.9A SOT23

ZNBG3115 ZNBG3116 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION

ZXCT1010 ENHANCED HIGH-SIDE CURRENT MONITOR ORDERING INFORMATION

ZXBM2001 ZXBM2002 ZXBM2003

APPLICATION FOCUS. Exceptional Class D subwoofer amplifier solutions. Setting new benchmarks in performance, power and cost

ZXM64P02 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.090 ; ID= -3.5A MSOP8

ZXM64N02 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=20V; RDS(ON)=0.040Ω; ID=5.4A MSOP8

ZXMD63C02X 20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

ZNBG3210 ZNBG3211 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 2 - FEBRUARY 2000

ZNBG3113 ZNBG3114 FET BIAS CONTROLLER WITH POLARISATION SWITCH AND TONE DETECTION ISSUE 1 - OCTOBER 1998

AN61 Designing with References - Extending the operating voltage range

ZXF36L01 VARIABLE Q FILTER DESCRIPTION APPLICATIONS FEATURES AND BENEFITS ORDERING INFORMATION SYSTEM DIAGRAM

ZLDO VOLT ULTRA LOW DROPOUT REGULATOR ISSUE 2 - JUNE 1997 DEVICE DESCRIPTION FEATURES APPLICATIONS

ZXLD1360EV7 ZXLD1360EV7 EVALUATION BOARD USER GUIDE. Figure 1: ZXLD1360EV7 evaluation board

APPLICATION FOCUS. Variable speed brushless DC motor pre-drivers

Transcription:

2.85 TO 12 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR DEVICE DESCRIPTION The ZSR Series three terminal fixed positive voltage regulators feature internal circuit current limit and thermal shutdown making the devices difficult to destroy. The circuit design allows creation of any custom voltage in the range 2.85 to 12 volts. The devices are available in a small outline surface mount package, ideal for applications where space saving is important, as well as through hole TO92 style packaging. The devices are suited to local voltage regulation applications, where problems could be encountered with distributed single source regulation, as well as more general voltage regulation applications. The ZSR Series show performance characteristics superior to other local voltage regulators. The initial output voltage is maintained to within 2.5% with a quiescent current of typically 350. Output voltage change, with input voltage and load current, is much lower than competitive devices. The ZSR devices are completely stable with no external components. FEATURES 2.85 to 12 Volt Output current up to 200mA Tight initial tolerance of 2.5% Low 600 a quiescent current -55 to 125 C temperature range No external components Internal thermal shutdown Internal short circuit current limit Small outline SOT223 package TO92 package VOLTAGE RANGE ZSR285 2.85V ZSR300 3.0V ZSR330 3.3V ZSR400 4.0V ZSR485 4.85V ZSR500 5.0V ZSR520 5.2V ZSR600 6.0V ZSR800 8.0V ZSR900 9.0V ZSR0 10.0V ZSR1200 12.0V 1

ABSOLUTE MAXIMUM RATING Input voltage 20V Output Current(I o) 200mA Operating Temperature -55 to 125 C Storage Temperature -65 to 150 C Power Dissipation (T amb=25 C) SOT223 2W(Note 3) TO92 600mW ELECTRICAL CHARACTERISTICS Notes: 1. The maximum operating input voltage and output current of the device will be governed by the maximum power dissipation of the selected package. Maximum package power dissipation is specified at 25 C and must be linearly derated to zero at T amb=125 C. 2. The following data represents pulse test conditions with junction temperatures as indicated at the initiation of the test. Continuous operation of the devices with the stated conditions might exceed the power dissipation limits of the chosen package. 3. Maximum power dissipation for the SOT223 and SO8 packages, is calculated assuming that the device is mounted on a PCB measuring 2 inches square. 4. The shut down feature of the device operates if its temperature exceeds its design limit as might occur during external faults, short circuits etc. If the regulator is supplied from an inductive source then a large voltage transient, on the regulator input, can result should the shut down circuit operate. It is advised that a capacitor (1µF or greater) should be applied across the regulator input to ensure that the maximum voltage rating of the device is not exceeded under shutdown conditions. ZSR285 TEST CONDITIONS (Unless otherwise stated):t j =25 C, =ma, =6.85V Output Voltage 2.78 2.85 2.92 V τ 2.736 2.964 V =4.85 to 20V =1 to ma τ 2.736 2.964 V Line Regulation =4.85 to 20V 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =4.85 to 20V Output Noise Voltage f=10hz to 10kHz 75 µv rms / Ripple Rejection =5.85 to 18V f=120hz 48 62 db Input Voltage Required To Maintain Regulation 4.85 4.55 V / T Average Temperature Coefficientof 0.1 / C =T j=-55 to 125 C 2

ZSR300 TEST CONDITIONS (Unless otherwise stated):t j =25 C, =ma, =7V Output Voltage 2.92 3.0 3.08 V τ 2.88 3.12 V =5 to 20V =1 to ma τ 2.88 3.12 V Line Regulation V =5 to 20 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =5 to 20V Output Noise Voltage f=10hz to 10kHz 75 µv rms / Ripple Rejection =6 to 18V f=120hz 48 62 db Maintain Regulation 5 4.7 V / T Average Temperature Coefficientof 0.1 / C ZSR330 TEST CONDITIONS (Unless otherwise stated):t j =25 C, =ma, =7.3V Output Voltage 3.218 3.3 3.382 V τ 3.168 3.432 V =5.3 to 20V 3.168 3.432 V =1 to ma τ Line Regulation V =5.3 to 20 7.5 30 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =5.3 to 20V Output Noise Voltage f=10hz to 10kHz 50 µv rms / Ripple Rejection =6.3 to 18V f=120hz 50 64 db Maintain Regulation 5.3 5 V / T =T j=-55 to 125 C Average Temperature Coefficient of 0.1 / C 3

ZSR400 TEST CONDITIONS (Unless otherwise stated):t j =25 C, =ma, =8V Output Voltage 3.9 4.0 4.1 V τ 3.84 4.16 V =6 to 20V 3.84 4.16 V =1 to ma τ Line Regulation V =6 to 20 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =6 to 20V Output Noise Voltage f=10hz to 10kHz 75 µv rms / Ripple Rejection =7 to 18V 48 62 db f=120hz Input Voltage Required To Maintain Regulation 6 5.3 V ZSR485 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =8.85V Output Voltage 4.729 4.85 4.971 V τ 4.656 5.044 V =6.8 to 20V 4.656 5.044 V =1 to ma τ Line Regulation V =6.85 to 20 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =6.85 to 20V Output Noise Voltage f=10hz to 10kHz 50 µv rms / Ripple Rejection =7.85 to 18V 50 64 db f=120hz Input Voltage Required To Maintain Regulation 6.85 6.55 V / T =T j = -55 to 125 C Average Temperature 0.1 / C Coefficientof 4

ZSR0 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =14V Output Voltage 9.75 10 10.25 V τ 9.6 10.4 V =12 to 20V 9.6 10.4 V =1 to ma τ Line Regulation V =12 to 20 12 40 Load Regulation =1 to ma 9 3 30 Quiescent Current τ 350 600 Quiescent Current Change =12 to 20V 0.25 Output Noise Voltage f=10hz to 10kHz 150 µv rms / Ripple Rejection =13 to 18V f=120hz 43 57 db Maintain Regulation 12 11.7 V / T Average Temperature Coefficientof / C ZSR1200 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =16V Output Voltage 11.7 12 12.3 V τ 11.52 12.48 V =14 to 20V 11.52 12.48 V =1 to ma τ Line Regulation V =14 to 20 12 40 Load Regulation =1 to ma 9 3 30 Quiescent Current τ 350 600 Quiescent Current Change =14 to 20V 0.25 Output Noise Voltage f=10hz to 10kHz 150 µv rms / Ripple Rejection =15 to 18V f=120hz 43 57 db Maintain Regulation 14 13.7 V / T Average Temperature Coefficientof / C τ =T j = -55 to 125 C 5

ZSR285 ZSR300 ZSR400 ZSR900 TYPICAL CHARACTERISTICS 6

ZSR285 ZSR300 ZSR400 ZSR900 ZSR SERIES TYPICAL CHARACTERISTICS 3.01 3.00 ZSR300 5.72 5.70 Output Voltage (V) 2.99 2.98 2.86 2.85 Io= 5mA Vin= Vo+ 4V Output Voltage (V) 5.68 5.66 4.00 3.98 Io= 5mA Vin= Vo+ 4V 2.84 2.82 ZSR285-50 -25 0 25 50 75 125 Temperature ( C) Output Voltage Temperature Coefficient 3.96 ZSR400 3.94-50 -25 0 25 50 75 125 Temperature ( C) Output Voltage Temperature Coefficient Output Voltage (V) 9.08 9.04 9.00 8.96 ZSR900 Io= 5mA Vin= Vo+ 4V Quiescent Current ( A) 450 400 350 300 Io= 0 Vin=Vo+ 4V 8.92-50 -25 0 25 50 75 125 Temperature ( C) Output Voltage Temperature Coefficient 250-50 -25 0 25 50 75 125 Temperature ( C) Quiescent Current v Temperature 500 2.5 Short-Circuit Output Current (ma) 400 300 200 Vo=0 Vin=10V 0-50 -25 0 25 50 75 125 Temperature ( C) Peak Output Current v Temperature Drop-Out Voltage (V) 2.0 1.5 1.0 0.5 Io=200mA Io=mA 0-50 -25 0 25 50 75 125 Temperature ( C) Drop-Out Voltage v Temperature 7

ZSR600 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =10V Output Voltage 5.85 6 6.15 V τ 5.76 6.24 V =8 to 20V 5.76 6.24 V =1 to ma τ Line Regulation V =8 to 20 10 40 Load Regulation =1 to ma 7 2.5 30 Quiescent Current τ 350 600 Quiescent Current Change =8 to 20V Output Noise Voltage f=10hz to 10kHz 90 µv rms / Ripple Rejection =9 to 18V f=120hz 48 62 db Maintain Regulation 8 7.7 V / T Average Temperature Coefficientof 0.15 / C τ =T j = -55 to 125 C ZSR500 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =9V Output Voltage 4.875 5 5.125 V τ 4.8 5.2 V =7 to 20V 4.8 5.2 V =1 to ma τ Line Regulation V =7 to 20 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =7 to 20V Output Noise Voltage f=10hz to 10kHz 75 µv rms / Ripple Rejection =8 to 18V f=120hz 48 62 db Maintain Regulation 7 6.7 V / T Average Temperature Coefficientof 0.1 / C 8

ZSR520 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, Output Voltage 5.070 5.2 5.330 V τ 4.99 5.41 V =7.2 to 20V 4.99 5.41 V =1 to ma τ Line Regulation V =7.2 to 20 10 40 Load Regulation =1 to ma 5 2 25 Quiescent Current τ 350 600 Quiescent Current Change =7.2 to 20V Output Noise Voltage f=10hz to 10kHz 75 µv rms / Ripple Rejection =8.2 to 18V f=120hz 48 62 db Maintain Regulation 7.2 6.9 V / T Average Temperature Coefficientof 0.1 / C =T j = -55 to 125 C ZSR900 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =13V Output Voltage 8.775 9.0 9.225 V τ 8.64 9.36 V =11 to 20V =1 to ma τ 8.64 9.36 V Line Regulation V =11 to 20 12 40 Load Regulation =1 to ma 9 3 30 Quiescent Current τ 350 600 Quiescent Current Change =11 to 20V 0.25 Output Noise Voltage f=10hz to 10kHz 150 µv rms / Ripple Rejection =12 to 18V f=120hz 43 57 db Maintain Regulation 11 10.7 V / T Average Temperature Coefficientof / C =T j = -55 to 125 C 9

ZSR330 ZSR500 ZSR600 ZSR800 ZSR0 TYPICAL CHARACTERISTICS 10

ZSR330 ZSR500 ZSR600 ZSR800 ZSR0 ZSR SERIES TYPICAL CHARACTERISTICS 4-38 11

ZSR800 TEST CONDITIONS (Unless otherwise stated): T j =25 C, =ma, =12V Output Voltage 7.8 8 8.2 V τ 7.68 8.32 V =10 to 20V 7.68 8.32 V =1 to ma τ Line Regulation V =10 to 20 11 40 Load Regulation =1 to ma 8 3 30 Quiescent Current τ 350 600 Quiescent Current Change =10 to 20V 0.25 Output Noise Voltage f=10hz to 10kHz 115 µv rms / Ripple Rejection =11 to 18V f=120hz 44 60 db Maintain Regulation 10 9.7 V / T Average Temperature Coefficient of / C =T j = -55 to 125 C 12

ZSR485 ZSR520 ZSR1200 ZSR SERIES TYPICAL CHARACTERISTICS 4-38 13

CONNECTION DIAGRAMS TO92 Package Suffix C SOT223 Package Suffix G Bottom View Top View Connect pin 4 to pin 2 or leave pin 4 electrically isolated ORDERING INFORMATION Part No Package Partmark ZSR C TO92 ZSR ZSR G SOT223 ZSR Voltage Option eg 3V device in TO92 package part number ZSR300C part marked ZSR300 * eg 12V device in SOT223 package part number ZSR1200G part marked ZSR1200 * SOT223 is supplied on tape in 7 reels of 0, suffix TA or 13 reels of 4000, suffix TC. Order code e.g. ZSR300GTA. TO92 is supplied loose in boxes of 4000, no suffix, or taped and wound on a reel of 1500, suffix STOB, or taped and folded in concertina form of 1500, suffix STZ. OPTIONS Voltage Voltage TO92 SOT223 Option 2.85V 285 3 3 3.0V 300 3 3 3.3V 330 3 3 4.0V 400 3 3 4.85V 485 3 3 5.0V 500 3 3 5.2V 520 3 3 6.0V 600 3 3 8.0V 800 3 3 9.0V 900 3 3 10.0V 0 3 3 12.0V 1200 3 3 * NOTE: Exception. ZSR0 part mark is ZSR for all package options 14

SCHEMATIC DIAGRAM APPLICATIONS 15

ZSR485 ZSR520 ZSR1200 TYPICAL CHARACTERISTICS 4-16

TYPICAL CHARACTERISTICS Zetex Semiconductors plc 2005 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Telephone: (852) 26 611 Fax: (852) 24250 494 asia.sales@zetex.com Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com 17