General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power Supply PFC High Current, High Speed Switching D G S Absolute Maximum Ratings (Ta = 5 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S V Gate-Source Voltage S ±3 V Continuous Drain Current ( ) T C=5 o C 7. A T C= o C. A Pulsed Drain Current () M A Power Dissipation Repetitive Avalanche Energy E AR () T C=5 o C W P D Derate above 5 o C.33 W/ o C Peak Diode Recovery dv/dt (3) Dv/dt.5 V/ns Single Pulse Avalanche Energy () E AS mj Junction and Storage Range T J, T stg -55~5 Id limited by maximum junction temperature. o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient () R θja.5 Thermal Resistance, Junction-to-Case () R θjc 3. o C/W Aug 9. Version.
Ordering Information Part Number Temp. Range Package Packing RoHS Status MDF7N -55~5 o C TO-F Tube Halogen Free Electrical Characteristics (Ta =5 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 5µA, = V - - Gate Threshold Voltage (th) =, = 5µA 3. - 5. Drain Cut-Off Current SS = V, = V - - µa Gate Leakage Current I GSS = ±3V, = V - - na Drain-Source ON Resistance R DS(ON) = V, = 3.5A.. Ω Forward Transconductance g fs = 3V, = 3.5A -.5 - S Dynamic Characteristics Total Gate Charge Q g - 7. - Gate-Source Charge Q gs = V, = 7.A, = V (3) -.9 - Gate-Drain Charge Q gd - 7.3 - Input Capacitance C iss - 75 Reverse Transfer Capacitance C rss = 5V, = V, f =.MHz - 5 Output Capacitance C oss - 95 Turn-On Delay Time t d(on) - Rise Time t r = V, = 3V, = 7.A, - 3 Turn-Off Delay Time t d(off) R G = 5Ω (3) - 35 Fall Time t f - 5 Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I S - - A V SD I S = 7.A, = V -. V t rr - 35 ns I F = 7.A, dl/dt = A/µs (3) Q rr - 3. µc V nc pf ns Note :. Pulse width is based on R θjc & R θja and the maximum allowed junction temperature of 5 C.. Pulse test: pulse width 3us, duty cycle %, pulse width limited by junction temperature T J(MAX)=5 C. 3. I SD 7.A, di/dt A/us, V DD=5V, R g =5Ω, Starting T J=5 C. L=.mH, I AS=7.A, V DD=5V, R g =5Ω, Starting T J=5 C Aug 9. Version.
,Drain Current [A] 5 3 9 7 5 3 V gs =5.5V =.V =.5V =7.V =.V =.V =5.V 5 5,Drain-Source Voltage [V] Fig. On-Region Characteristics Notes. 5 μs Pulse Test. T C =5 R DS(ON) [Ω ] 3..5..5..5 =.V 5 5,Drain Current [A] =V Fig. On-Resistance Variation with Drain Current and Gate Voltage.. R DS(ON), (Normalized) Drain-Source On-Resistance...... = V. = 5 A =V =.5V BS, (Normalized) Drain-Source Breakdown Voltage...9. = V. = 5 μa. -5-5 5 5 75 5 5 T J, Junction [ o C] Fig.3 On-Resistance Variation with. -5 5 5 T J, Junction [ o C] Fig. Breakdown Voltage Variation vs. * Notes ;. Vds=3V. = V. = 5 μa (A) 5 5-55 R Reverse Drain Current [A] 5 5. [V] Fig.5 Transfer Characteristics........ V SD, Source-Drain Voltage [V] Fig. Body Diode Forward Voltage Variation with Source Current and Aug 9. Version. 3
, Gate-Source Voltage [V] Note : I = 7A D Q G, Total Gate Charge [nc] V 3V V Capacitance [pf] C oss C iss C rss, Drain-Source Voltage [V] C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd Notes ;. = V. f = MHz Fig.7 Gate Charge Characteristics Fig. Capacitance Characteristics Operation in This Area is Limited by R DS(on) µs µs ms, Drain Current [A] - Single Pulse T J =Max rated T C =5 DC s ms ms, Drain Current [A] - -, Drain-Source Voltage [V] 5 5 75 5 5 T C, Case [ ] Fig.9 Maximum Safe Operating Area Fig. Maximum Drain Current vs. Case D=.5. single Pulse R thjc = 3. /W T C = 5 Z θ JC (t), Thermal Response - -..5.. single pulse Duty Factor, D=t /t PEAK T J = P DM * Z θ JC * R θ JC (t) + T C R Θ JC =3. /W -5 - -3 - - t, Rectangular Pulse Duration [sec] Fig. Transient Thermal Response Curve Power (W) E-5 E- E-3.. Pulse Width (s) Fig. Single Pulse Maximum Power Dissipation Aug 9. Version.
Physical Dimensions 3 Leads, TO-F Dimensions are in millimeters unless otherwise specified Aug 9. Version. 5