BRBCTG, NRVBBCTTG, NRVBBSCTTG SWITCHODE Power Rectifier Surface ount Power Package The Power Rectifier is a state of the art device that employs the use of the Schottky Barrier principle with a platinum barrier metal. eatures Package Designed for Power Surface ount pplications Center Tap Configuration Guardring for Stress Protection ow orward Voltage 175 C Operating Junction Temperature Epoxy eets U 9 V @.125 in Short Heat Sink Tab anufactured Not Sheared! Similar in Size to Industry Standard TO 2 Package NRVBB and NRVBBS Prefixes for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q1 Qualified and PPP Capable These Devices are Pb ree and are RoHS Compliant* echanical Characteristics Case: Epoxy, olded, Epoxy eets U 9 V Weight: 1. Grams (pproximately) inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead and ounting Surface Temperature for Soldering Purposes: 26 C ax. for Seconds BRBCTG, NRVBBCTTG eets S1 Requirements NRVBBSCTTG eets S2 Requirements ESD Ratings: achine odel = C (> V) Human Body odel = B (> 8 V) SCHOTTKY BRRIER RECTIIER PERES VOTS 1 CSE 18B STYE RKING DIGR Y WW B G K Y WW BG K = ssembly ocation = Year = Work Week = Device Code = Pb ree Package = Diode Polarity ORDERING INORTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D. Semiconductor Components Industries, C, 12 ugust, 12 Rev. 1 Publication Order Number: BRBCT/D
BRBCTG, NRVBBCTTG, NRVBBSCTTG XIU RTINGS (Per eg) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RR V RW V R V verage Rectified orward Current Per eg (Rated V R, T C = 155 C) Total Device Peak Repetitive orward Current (Rated V R, Square Wave, khz, T C = 15 C) Non Repetitive Peak Surge Current (Surge pplied at Rated oad Conditions Halfwave, Single Phase, 6 Hz) Peak Repetitive Reverse Surge Current (2. s, 1. khz) I (V) I R I S 15 I RR.5 Storage Temperature Range T stg 65 to +175 C Operating Junction Temperature (Note 1) T J 65 to +175 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < 1/R J. THER CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit Thermal Resistance, Junction to Case Junction to mbient (Note 2) R JC R J 2. 5 C/W 2. When mounted using minimum recommended pad size on R board. EECTRIC CHRCTERISTICS (Per eg) Characteristic Symbol Value Unit aximum Instantaneous orward Voltage (Note ) v V (i = mp, T C = 125 C) (i = mp, T C = 25 C) (i = mp, T C = 125 C) (i = mp, T C = 25 C).75.85.85.95 aximum Instantaneous Reverse Current (Note ) (Rated dc Voltage, T J = 125 C) (Rated dc Voltage, T J = 25 C). Pulse Test: Pulse Width = s, Duty Cycle 2.%. i R 6..1 m ORDERING INORTION BRBCTG BRBCTTG NRVBBCTTG Device Package Shipping 5 Units / Rail 8 Units / Tape & Reel 8 Units / Tape & Reel NRVBBSCTTG 8 Units / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. 2
I I BRBCTG, NRVBBCTTG, NRVBBSCTTG i, INSTNTNEOUS ORWRD CURRENT (PS) 5 5 1.5 125 C 15 C C T J = 25 C.1.1.2...5.6.7.8.9 1, REVERSE CURRENT (m) R 1..1.1.1 T J = 15 C 125 C C 25 C 6 8 v, INSTNTNEOUS VOTGE (VOTS) igure 1. Typical orward Voltage Per Diode V R, REVERSE VOTGE (VOTS) igure 2. Typical Reverse Current Per Diode, VERGE ORWRD CURRENT (PS) (V) 15 5. dc SQURE WVE RTED VOTGE PPIED R JC = 2 C/W 8 1 16 18 T C, CSE TEPERTURE ( C) igure. Typical Current Derating, Case, Per eg VERGE POWER (WTTS) 18 16 1 12 8 6 T J = 125 C I PK /I V = I PK /I V = I PK /I V = 5 2 2 6 8 12 1 16 18 VERGE CURRENT (PS) igure. verage Power Dissipation & verage Current PI DC SQURE WVE
BRBCTG, NRVBBCTTG, NRVBBSCTTG PCKGE DIENSIONS CSE 18B ISSUE K T SETING PNE B 1 2 G S D P.1 (.5) T B K C H E V W J W STYE : PIN 1. NODE 2. CTHODE. NODE. CTHODE NOTES: 1. DIENSIONING ND TOERNCING PER NSI Y1.5, 1982. 2. CONTROING DIENSION: INCH.. 18B 1 THRU 18B OBSOETE, NEW STNDRD 18B. INCHES IIETERS DI IN X IN X..8 8.6 9.65 B.8.5 9.65.29 C.16.19.6.8 D..5.51.89 E.5.55 1.1 1...5 7.87 8.89 G. BSC 2.5 BSC H.8.1 2. 2.79 J.18.25.6.6 K.9.1 2.29 2.79.52.72 1.2 1.8.28. 7.11 8.1 N.197 RE 5. RE P.79 RE 2. RE R.9 RE.99 RE S.575.625 1.6 15.88 V.5.55 1.1 1. VRIBE CONIGURTION ZONE R N U P VIEW W W VIEW W W VIEW W W 1 2 SODERING OOTPRINT*.9 8.8 16.155 2X.5 2X 1.16 5.8 PITCH DIENSIONS: IIETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SODERR/D.
BRBCTG, NRVBBCTTG, NRVBBSCTTG ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCIC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent arking.pdf. SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INORTION ITERTURE UIENT: iterature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8217 US Phone: 675 2175 or 8 86 Toll ree US/Canada ax: 675 2176 or 8 867 Toll ree US/Canada Email: orderlit@onsemi.com N. merican Technical Support: 8 282 9855 Toll ree US/Canada Europe, iddle East and frica Technical Support: Phone: 21 79 29 Japan Customer ocus Center Phone: 81 5817 5 5 ON Semiconductor Website: www.onsemi.com Order iterature: http://www.onsemi.com/orderlit or additional information, please contact your local Sales Representative BRBCT/D